Transistor-continued Arrays General-Purpose High-Current N-P-N Transistor Arrays CA3083 CA3183 ! 2 7 9 14 . ge Applications and Features CA3183A Q; Qo Qs Q4 Q5 5 independent transistors plus separate substrate connection Matched pair (Q1 arid Q2): Vio (Vege matched): +5 mV max. Lamp and relay driver tio (at 1 mA): 2.5 {A max. Differential amplifier 1 hee = 40 min. at I = 50 mA Thyristor firing O O Signal processing and switching systems operating from dc to vhf 6 18 3 4 6 8 i0 il i 2 . . es guesTRATE O ozcs-19638 Temperature-compensated amplifier 5 Package Suffix Ta (C) Electrical Characteristics at Ta = 25C 16-Lead DIP E DATA | Veco | Vena | Voes | Vee |, - : : Ic 16-Lead Frit Seat (CA3083) F J -85t0 125 wo. | Pe) ey eet | mae ma Beam Lead (CA3083) L Page 59 CA3083 481 15 20 7 4 = 74 100 Chip (CA3083, CA3183) H Page 59 CA3183AE | 532 40 50 17 0.75 75 CA3183E 532 30 40 17 0.75 75 File Nos. 481 and 532; ICAN No. 5296* No suffix for CA3083 Thyristor/ Transistor Array CA3097 Applications and Features Complete isolation between elements p-n-p/n-p-n transistor pair hre 28000 (typ.) at ic = 10 mA Programmable unijunction transistor (PUT) peak-point current = 15 nA (typ.) at Rg = 1 MQ; VaK = +30V (PUT) Extremely long RC time constants with low value of external capacitor Sensitive-gate silicon controlled rectifier (SCR) Zener-diode impedance (Zz) = 1592 (typ.} at 10 mA Timers Light dimmers/mcotor controls | Constant-current sources Oscillators Amplifiers One-shot multivibrators Voltage regulators Comparators, Schmitt triggers Logic circuits SCR triggering Pulse circuits PF --4 | | suBsTRaTE | | _ 5) (16) 92CS-21935 Package Suffix Ta (C) 16-Lead DIP E 55 to 125 Chip H Page 59 File No. 633* Maximum Ratings at Ta = 25C Dissipation, Tota! Package up to Ta = 559C... 2.0... 750 mw Each Transistor n-p-n (Q3, Q5) p-n-p (Q4) Collector-to-Emitter Voltage 30 40 V Collector Current 100 10 mA Emitter-to-Base Voitage 5 -40 V Programmable Unijunction Transistor Gate-to-Cathode Positive Voltage ......-.0-. 00 eee ee 30 V Gate-to-Anode Negative Voltage ........0...002200020005 30 V Anode-to-Cathode Voltage ...........0. 0000 c cece eee +30V DC Anode Current .......00.2. 0002 ee ee ene 150 mA Silicon Controlled Rectifier Repetitive Peak Reverse Voltage ..........-.00-200 0s eeee 30 V Repetitive Peak Off-State Voltage .........-. 000000005 0e 30V DC On-State Current .. 2.0.0.0 2 0.0 ee ee eee 150 mA Zener Diode DC Current 2.2... . ee ee eee eee 25 mA Electrical Characteristics at Ta = 25C V (BR) CEO | VCE (sat) VBE hFE Transistors : Vinin Vin Vtyp (min) Q3, Qs (n-p-n) 30 0.1 at 0.73 100 at i = 50mA io = 10mA Q4 (p-n-p} 40 0.33 at 0.6 40 at lc =-tImA ic = 50 mA Q3,.04 - - 6500 at I = 50 mA Programmaibte Vr VE Ip IGao Unijunction Transistor Vmax Vmax LA max nA typ. Oy 0.7 1.5 at 0.15 at 0.02 at tp = 50mMA | Rg-1 MQ Vs=30V Vg =10V Siticon ID {R) RXM os VGT tgt Controited LA max LA max. Vmax nA typ. Rectifier Q Qat 100 0.75 50 VbIR) RXM Zener Diode Vz ZZ AVZ/AT ViBR}zio Viyo & max mv /oC V min. 24 Bat 25 at +4 at 50 at Iz = 10mA f=1tkHz Ilz7=tOmA]Iz= 100HA Refer to indicated File No. for data bulletin and where given to indicated |CAN No. for application note. 25