INTEGRATED CIRCUITS DATA SHEET TEA1103; TEA1103T; TEA1103TS Fast charge ICs for NiCd and NiMH batteries Preliminary specification Supersedes data of 1997 Oct 09 File under Integrated Circuits, IC03 1999 Jan 27 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS FEATURES GENERAL DESCRIPTION * Safe and fast charging of Nickel Cadmium (NiCd) and Nickel Metal Hydride (NiMH) batteries The TEA1103x are fast charge ICs which are able to fast charge NiCd and NiMH batteries. * Pin compatible with the TEA1102x, fast charge ICs for LiIon, SLA, NiCd and NiMH batteries The main fast charge termination for NiCd and NiMH batteries are T/t and peak voltage detection, both of which are well proven techniques. The TEA1103x automatically switches over from T/t to peak voltage detection if the thermistor fails or is not present. The T/t detection sensitivity is temperature dependent, thus avoiding false charge termination. Three charge states can be distinguished; fast, top-off and trickle. * Three charge states for NiCd or NiMH; fast, top-off and trickle or voltage regulation (optional) * Adjustable fast charge current [0.5CA to 5CA nominal (CA = Capacity Amperes)] * DC top-off and pulsating trickle charge current (NiCd and NiMH) Several LEDs, as well as a buzzer, can be connected to the TEA1103x for indicating battery insertion, charge states, battery full condition and protection mode. * Temperature dependent T/t battery full detection * Automatic switch-over to accurate peak voltage detection (-14%) if no NTC is applied The TEA1103x are contained in a 20-pin package and are manufactured in a BiCMOS process, essentially for integrating the complex mix of requirements in a single chip solution. Only a few external low cost components are required in order to build a state of the art charger. * Possibility to use both T/t and peak voltage detection as main fast charge termination * Support of inhibit during all charging states * Manual refresh with regulated adjustable discharge current (NiCd and NiMH) The TEA1103x are pin compatible with the TEA1102x, fast charge ICs for LiIon, SLA, NiCd and NiMH batteries. * Voltage regulation in the event of no battery * Support of battery voltage based charge indication and buzzer signalling at battery insertion, end of refresh and at full detection * Single, dual and separate LED outputs for indication of charge status state * Minimum and maximum temperature protection * Time-out protection * Short-circuit battery voltage protection * Can be applied with few low-cost external components. ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION TEA1103 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1 TEA1103T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1 TEA1103TS 1999 Jan 27 SSOP20 2 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP supply voltage 5.5 - 11.5 V IP supply current outputs off - 4 - mA VNTC/VNTC temperature rate dependent (T/t) detection level VNTC = 2 V; Tj = 0 to 50 C - -0.25 - % Vbat/Vbat voltage peak detection level with respect to top value Vbat = 2 V; Tj = 0 to 50 C - -0.25 - % IVbat input current battery monitor Vbat = 0.3 to 1.9 V - 1 - nA Vbat(l) voltage at pin 19 for detecting low battery voltage - 0.30 - V IIB battery charge current fast charge 10 - 100 A top-off mode - 3 - A IIB(max) maximum battery charge current voltage regulation full - NiCd and NiMH battery 10 - A IIB(Lmax) maximum load current no battery - 40 - A fosc oscillator frequency 10 - 200 kHz Vreg regulating voltage NiCd and NiMH (pin Vstb open-circuit) - 1.325 or Vstb - V open battery - 1.9 - V 1999 Jan 27 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 1 OSC 20 14 top standby load fast charge off current current 1.25/Rref 3 A 10 A 40 A 4.25 V PROTECTION CHARGE CONTROL AND OUTPUT DRIVERS 3.3 V NTC present A2 battery low 0.3 V 2.8 V 4.25 V 156 k MTV 9 1V 4 12 k 0.75 V LS OSC PWM SET R Q 17 Vreg 1V end refresh 1.9 V nobattery A1 18 A3 LS AO 4x Tmax Tcut-off 1.325 V/Vstb NiCd NIMH 1.9 V nobattery 36 k 10 A4 100 mV 2 TEA1103 4 8 TIMER AND CHARGE STATUS INDICATION Vbat SUPPLY BLOCK 12 13 handbook, full pagewidth Vsl 6 7 16 VS Fig.1 Block diagram. 3 GND 11 FCT MBH547 PSD LED POD PTD Preliminary specification VP 5 IB TEA1103; TEA1103T; TEA1103TS DA/AD CONVERTER RFSH refresh CONTROL LOGIC NTC PWM S Vbat Tmin 15 Philips Semiconductors 19 Rref Fast charge ICs for NiCd and NiMH batteries Vstb BLOCK DIAGRAM 1999 Jan 27 Vbat Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS PINNING SYMBOL PIN DESCRIPTION Vstb 1 standby regulation voltage input (NiCd and NiMH) IB 2 charge current setting GND 3 ground PSD 4 program pin sample divider LED 5 LED output POD 6 program pin oscillator divider GND 3 18 AO PTD 7 program pin time-out divider PSD 4 17 LS NTC 8 temperature sensing input MTV 9 maximum temperature voltage RFSH 10 refresh input/output FCT 11 fast charge termination and battery chemistry identification VP 12 positive supply voltage Vsl 13 switched reference voltage output OSC 14 oscillator input PWM 15 pulse width modulator output VS 16 stabilized reference voltage LS 17 loop stability pin AO 18 analog output Vbat 19 single-cell battery voltage input Rref 20 reference resistor pin handbook, halfpage Vstb 1 20 Rref IB 2 19 Vbat 16 VS LED 5 TEA1103 POD 6 15 PWM PTD 7 14 OSC NTC 8 13 Vsl MTV 9 12 VP RFSH 10 11 FCT MBH539 1999 Jan 27 Fig.2 Pin configuration. 5 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS battery to be charged to nearly 100% before the system switches over to standby. INTRODUCTION All battery types are initially fast charged with an adjustable high current. Fast charge termination depends upon the battery type. With NiCd and NiMH batteries the main fast charge termination will be the T/t (temperature detection) and/or peak voltage detection. After the battery has been charged to nearly 100% by the top-off period, discharge of the battery (caused by a load or by the self-discharge) can be avoided by voltage regulation or by trickle charge. If batteries are charged in combination with a load, the TEA1103x can be programmed to apply voltage regulation during the standby mode. In this way, discharge of the battery caused by self-discharge or by an eventual load is avoided. The regulating voltage is adjustable to the voltage characteristic of the battery. For battery safety the charge current is limited and the temperature is monitored during voltage regulation. If a trickle charge is applied, the self-discharge of the battery will be compensated by a pulsating charge current. The fast charge period is followed by a top-off period for NiCd and NiMH batteries. During the top-off period the NiCd and NiMH batteries are charged to maximum capacity by reduced adjustable charge current. The top-off period ends after time-out or one hour respectively. After the top-off period, the TEA1103x switches over to the standby mode. For NiCd and NiMH batteries either the voltage regulation or trickle charge mode can be selected. The voltage regulation mode is selected when the battery includes a fixed load. Trickle charge prevents a discharge of the battery over a long period of time. To avoid the so called `memory effect' in NiCd batteries, a refresh can be manually activated. The discharge current is regulated by the IC in combination with an external power transistor. After discharging the battery to 1 V per cell, the system automatically switches over to fast charge. Charging principles CHARGING NiCd/NiMH BATTERIES FUNCTIONAL DESCRIPTION Fast charging of the battery begins when the power supply voltage is applied and at battery insertion. Control logic During fast charge of NiCd and NiMH batteries, the battery temperature and voltage are monitored. Outside the initialized temperature and voltage window, the system switches over to the top-off charge current. The main function of the control logic is to support the communication between several blocks. It also controls the charge method, initialization and battery full detection. The block diagram of the TEA1103x is illustrated in Fig.1. The TEA1103x supports detection of fully charged NiCd and NiMH batteries by either of the following criteria: Conditioning charge method and initializations * T/t At system switch-on, or at battery insertion, the control logic sets the initialization mode in the timer block. After the initialization time the timer program pins can be used to indicate the charging state using several LEDs. The charge method is defined at the same time by the following methods: * Voltage peak detection. If the system is programmed with T/t and Vpeak or, T/t or Vpeak as the main fast charge termination, it automatically switches to voltage peak detection if the battery pack is not provided with a temperature sensing input (NTC). In this way both packages, with and without temperature sensor, can be used randomly independent of the applied full detection method. Besides T/t and/or voltage peak detection, fast charging is also protected by temperature cut-off and time-out. * If the FCT pin is floating, the system will charge the battery according to the charge characteristic of NiCd and NiMH batteries. * The standby charge method (NiCd and NiMH), trickle charge or voltage regulation, is defined by the input pin Vstb. By biasing this voltage with a set voltage, the output voltage will be regulated to the Vstb set voltage. If this pin is connected to VS, or no NTC is connected the system applies trickle charge. To avoid false fast charge termination by peak voltage detection or T/t, full detection is disabled during a short hold-off period at the start of a fast charge session. After fast charge termination, the battery is extra charged by a top-off period. During this period of approximately one hour, the charge current is lowered thus allowing the 1999 Jan 27 6 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS The inhibit mode has the main priority. This mode is activated when the Vstb input pin is connected to ground. Inhibit can be activated at any charge/discharge state, whereby the output control signals will be zero, all LEDs will be disabled and the charger timings will be set on hold. Table 1 gives an operational summary. If pin RFSH is connected to ground by depressing the switch, the TEA1103x discharges the battery via an external transistor connected to pin RFSH. The discharge current is regulated with respect to the external (charge) sense resistor (Rsense). End-of-discharge is reached when the battery is discharged to 1 V per cell. Refreshing the battery can only be activated during charging of NiCd and NiMH batteries. Table 1 Functionality of program pins FUNCTION FCT NTC RFSH Vstb X(1) X(1) X(1) low X(1) low not low floating note 3 not low not low high note 3 not low not low Voltage peak detection not low note 4 not low not low Trickle charge at standby not low X(1) not low high not low note 4 not low not low not low note 3 not low floating(5) Inhibit Refresh T/t detection T/t and voltage peak detection Voltage regulation at standby not low(2) Notes 1. Where X = don't care. 2. Not low means floating or high. 3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC. 4. The NTC voltage is outside the window for NTC detection. 5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification. Rref in the event of fast charge and by an internal bias current source in the event of top-off and trickle charge (IIB), see Fig.1. The positive node of Rb will be regulated to zero via error amplifier A1, which means that the voltage across Rb and Rsense will be the same. The fast charge current is defined by the following equation: (1) I fast x R sense = R b x I ref Supply block The supply block delivers the following outputs: * A power-on reset pulse to reset all digital circuitry at battery insertion or supply switch-on. After a general reset the system will start fast charging the battery. * A 4.25 V stabilized voltage source (VS) is externally available. This source can be used to set the thermistor biasing, to initialize the programs, to supply the external circuitry for battery voltage based charge indication and to supply other external circuitry. The output of amplifier A1 is available at the loop stability pin LS, consequently the time constant of the current loop can be set. When Vpeak (NiCd and NiMH) is applied, the current sensing for the battery voltage will be reduced, implying that the charge current will be regulated to zero during: * A 4.25 V bias voltage (Vsl) is available for use for more indication LEDs. This output pin will be zero during the initialization period at start-up, thus avoiding any interference of the extra LEDs when initializing. t sense = 2 x POD x t osc Actually battery voltage sensing takes place in the last oscillator cycle of this period. Charge control The charge current is sensed via a low-ohmic resistor (Rsense), see Fig.4. A positive voltage is created across resistor Rb by means of a current source Iref which is set by 1999 Jan 27 10 7 (2) Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS To avoid modulation on the output voltage, the top-off charge current is DC regulated, defined by the following equation: I top - off x R sense = R b x 3 x 10 -6 Timer The timing of the circuit is controlled by the oscillator frequency. (3) The timer block defines the maximum charging time by `time-out'. At a fixed oscillator frequency, the time-out time can be adapted by the Programmable Time-out Divider (PTD) using the following equation. where: t top - off = 2 27 x TOD x t osc (4) t time - out = 2 The top-off charge current will be approximately 0.15CA, which maximizes the charge in the battery under safe and slow charging conditions. The top-off charge period will be approximately one hour, so the battery will be extra charged with approximately 0.15 Q. In this way the battery is fully charged before the system switches over to standby. x POD x PTD x t osc (6) The time-out timer is put on hold by low voltage, temperature protection and during the inhibit mode. The Programmable Oscillator Divider (POD) enables the oscillator frequency to be increased without affecting the sampling time and time-out. Raising the oscillator frequency will reduce the size of the inductive components that are used. When pin 1 (Vstb) is connected to VS, or no NTC is connected the system compensates the (self) discharge of the battery by trickle charge. The trickle charge current will be pulsating, defined by the following equation: -6 15 (5) I trickle x R sense = R b x ------ x 10 16 At fast charging, after battery insertion, after refresh or supply interruption, the full detector will be disabled for a period of time to allow a proper start with flat or inverse polarized batteries. This hold-off period is disabled at fast charging by raising pin Vstb to above 5 V (once). So for test options it is possible to slip the hold-off period. The hold-off time is defined by the following equation: During the non current periods at trickle charge the charge current is regulated to zero, so that the current for a load connected in series across the battery with the sense resistor will be supplied by the power supply and not by the battery. t hold - off = 2 -5 x t time - out Table 2 gives an overview of the settings of timing and discharge/charge currents. If at pin 1 (Vstb) a reference voltage is set in accordance with the specification, and no NTC is connected the charge mode will switch over from current to voltage regulation after top-off. The reference regulating voltage can be adjusted to the battery characteristic by external resistors connected to pin Vstb. This reference voltage has to be selected in such a way that it equals the rest voltage of the battery. By using voltage regulation, the battery will not be discharged at a load occurrence. If the Vstb input pin is floating, the TEA1103x will apply voltage regulation at 1.325 V during the standby mode (NiCd and NiMH). The current during voltage regulation is limited to 0.5CA. If the battery charge current is maximized to 0.5CA for more than 2 hours charging will be stopped. Moreover, if the temperature exceeds Tmax, charging will be stopped completely. As voltage regulation is referred to one cell, the voltage on the Vbat pin must be the battery voltage divided by the number of cells (NiCd and NiMH). When charging, the standby mode can only be entered after a certain period of time depending on time-out. To support full test of the TEA1103x at application, the standby mode is also entered when Vbat < Vbat(l) at top-off. 1999 Jan 27 26 8 (7) Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries Table 2 TEA1103; TEA1103T; TEA1103TS Timing and current formulae SYMBOL DESCRIPTION FORMULAE tosc timing see Fig.3 Tsampling (T/t) NTC voltage sampling frequency 217 x POD x PSD x tosc Tsampling (Vpeak) battery voltage sampling frequency 216 x POD x tosc ttop-off 227 x POD x tosc ttime-out 226 x POD x PTD x tosc thold-off 2-5 x ttime-out tLED 214 x POD x tosc inhibit or protection tsense 210 x POD x tosc tswitch 221 x POD x PTD x tosc Ifast charge/discharge currents V ref Rb ----------------- x ---------R sense R ref Itop-off Rb -6 ----------------- x 3 x 10 R sense Itrickle Rb -6 15 ----------------- x ------ x 10 R sense 16 Iload-max Rb -6 ----------------- x 40 x 10 R sense IRFSH 100 mV -------------------R sense 1999 Jan 27 9 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS PTD programming handbook, full pagewidth 200 :1 :2 :4 (GND) (n.c.) (+VS) 12.5 (R23 min) 125 (R23 max) fosc (kHz) prefered oscillator range (POD = +VS) 160 C4 (pF) 120 68 prefered oscillator range (POD = n.c.) 80 100 150 prefered oscillator range (POD = GND) 40 0 0 220 390 560 820 1500 30 60 90 120 150 180 ttime-out (min) 10 30 50 70 90 110 130 R23 (k) MGD280 Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter. * Fast charge (LED on) LED indication * 100% or refresh (LED off) With few external components, indication LEDs can be connected to the program pins and the LED pin of the TEA1103x. These program pins change their function from an input to an output pin after a short initialization time at system switch-on or battery insertion. Output pin Vsl enables the external LEDs to be driven and avoids interaction with the programming of the dividers during the initialization period. * Protection or inhibit (LED floating). The refresh can be indicated by an extra LED connected to pin 4 (PSD). A buzzer can also be driven from the TEA1103x to indicate battery insertion end of refresh or full battery. AD/DA converter The applied LEDs indicate: * Refresh When battery full is determined by peak voltage detection, the Vbat voltage is sampled at a rate given by the following equation: * Fast charge t sampling ( V peak ) = 2 * Protection * 100% x POD x t osc (8) The analog value of a Vbat sample is then digitized and stored in a register. On the following sample, the digitized value is converted back to the analog value of Vbat and compared with the `new' Vbat sample. * No-battery. The LED output pin can also indicate the charging state by one single LED. The indication LED can be connected directly to the LED output. This single LED indicates: 1999 Jan 27 16 10 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS At an increase of the battery voltage the 14-bit Analog-to-Digital Converter (ADC) is refreshed with this new value. Therefore, the digitized value always represents the maximum battery voltage. A decreased Vbat voltage is not stored, but is compared to the stored value. Output drivers Full is detected when the voltage decrease of Vbat is 14% of the stored peak battery value. To avoid interference due to the resistance of the battery contacts during battery voltage sensing, the charge current is regulated to zero during t = 210 x POD x tosc, via the regulation pins AO and PWM. At the last period, the Vbat voltage is sensed and stored in a sample-and-hold circuit. This approach ensures very accurate detection of the battery full condition (minus 14%). The analog control voltage output at pin 18 (AO) can be used to drive an opto-coupler in mains separated applications when an external resistor is connected between AO and the opto-coupler. The maximum current through the opto-coupler diode is 2 mA. The voltage gain of amplifier A2 is typical 11 dB (times 3.5). The DC voltage transfer is given by the following equation: The charge current regulation signal is available at two output pins, AO and PWM. ANALOG OUTPUT VAO = 3.5 x (VLS - 1.35). The AO output can be used for: When battery full is determined by T/t, the voltage on the NTC pin is used as the input voltage to the AD/DA converter. The sampling time at T/t sensing is given by the following equation: 17 T t sampling ------- = 2 x POD x PSD x t osc (9) t * Linear (DC) applications * Not mains isolated SMPS with a separate controller * Mains isolated SMPS, controlled by an opto-coupler. PULSE WIDTH MODULATOR (PWM) The LS voltage is compared internally with the oscillator voltage to deliver a pulse width modulated output at PWM (pin 15) to drive an output switching device in a SMPS converter application via a driver stage. The PWM output is latched to prevent multi-pulsing. The maximum duty factor is internally fixed to 79% (typ.). The PWM output can be used for synchronization and duty factor control of a primary SMPS via a pulse transformer. After this initialized sample time the new temperature voltage is compared to the preceding AD/DA voltage and the AD/DA is refreshed with this new value. A certain increase of the temperature is detected as full battery, depending on the initialization settings. The decision of full detection by T/t or Vpeak is digitally filtered thus avoiding false battery full detection. 1999 Jan 27 11 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); note 1 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Voltages VP positive supply voltage -0.5 - +11.5 V VoLED output voltage at pin 5 -0.5 - +15 V Vn voltage at pins PWM, LS and NTC -0.5 - +VS V VIB voltage at pin 2 -0.5 - +1.0 V IVS current at pin 16 -3 - +0.01 mA IVsl current at pin 13 -1 - +0.3 mA IoLED output current at pin 5 - - 12 mA Currents IAO output current at pin 18 -10 - +0.05 mA IoPWM output current at pin 15 -15 - +14 mA IRref current at pin 20 -1 - +0.01 mA IP positive supply current Tj < 100 C - - 30 mA IP(stb) supply standby current VP = 4 V - 35 45 A total power dissipation Tamb = 85 C Dissipation Ptot SOT146-1 - - 1.2 W SOT163-1 - - 0.6 W SOT339-1 - - 0.45 W Temperatures Tamb operating ambient temperature -20 - +85 C Tj junction temperature - - 150 C Tstg storage temperature -55 - +150 C Note 1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not violated; current ratings are valid provided that the power rating is not violated. QUALITY SPECIFICATION In accordance with the general quality specification for integrated circuits: "SNW-FQ-611E". 1999 Jan 27 12 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS CHARACTERISTICS VP = 10 V; Tamb = 25 C; Rref = 62 k; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies; pins VP, VS, Rref and Vsl VP supply voltage 5.5 - 11.5 V IP supply current outputs off; VP = 11.5 V - 4 6 mA Istb standby current VP = 4 V - 35 45 A Vclamp clamping voltage (pin 12) Iclamp = 30 mA 11.5 - 12.8 V Vstart start voltage 6.1 6.4 6.7 V VLSP low supply protection level 5.1 5.3 5.5 V VS source voltage (stabilized) 4.14 4.25 4.36 V IS = 2 mA VSL LED source voltage ILED = 50 A 4.05 4.25 4.45 V Vref reference voltage Iref = 20 A; VP = 10 V 1.21 1.25 1.29 V TCVref temperature coefficient of the reference voltage Tamb = 0 to 45 C; Iref = 20 A; Vref = 1.25 V 0 60 120 ppm/K Vref/VP power supply rejection ratio of the reference voltage f = 100 Hz; VP = 8 V; VP = 2 V (p-p) -46 - - dB Vref load rejection of source voltage IS = 20 mA; VP = 10 V - - 5 mV IRref current range of reference resistor 10 - 100 A Iref = 10 A 0.93 1.03 1.13 Iref = 100 A Charge current regulation; pins IB and Rref IIB/Iref VthIB fast charge ratio threshold voltage at pin IB VIB = 0 0.93 1.0 1.07 Tamb = 25 C -2 - +2 mV Tamb = 0 to 45 C -3 - +3 mV 2.6 IIB charge current top-off mode; VIB = 0 3.2 3.8 A IIB(max) maximum charge current voltage regulation full 9 NiCd/NiMH battery; VIB = 0 10.5 12 A IIB(Lmax) maximum load current open battery; VIB = 0 34 42 50 A IIB(LI) input leakage current currentless mode - - 170 nA V IB ; refresh I refresh = ----------------R sense 75 100 125 mV Refresh; pin RFSH VRsense sense resistor voltage mode; Irefresh = 18 mA VRFSH refresh voltage for programming start of refresh NiCd/NiMH 0 - 250 mV Vbat voltage at pin Vbat for detecting end of refresh NiCd/NiMH 0.96 1.0 1.04 V 1999 Jan 27 13 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries SYMBOL PARAMETER TEA1103; TEA1103T; TEA1103TS CONDITIONS MIN. TYP. 2 MAX. 2.6 UNIT Isource(max) maximum source current VIB = 75 mV; VP = 10 V VRFSH = 2.7 V; Tamb = 25 C 1.4 mA VRFSH(max) maximum refresh voltage IRFSH = 1 mA 2.7 - - V VRFSH(off) voltage at pin RFSH when refresh is off 700 770 840 mV pin MTV open-circuit 0.9 1 1.1 V MTV setting 0.95MTV MTV 1.05MTV V Temperature related inputs; pins NTC and MTV VNTCh input voltage at pin NTC for detecting high temperature VNTCh(hy) hysteresis of VNTCh - 80 - mV VNTCl input voltage at pin NTC, detecting low temperature 2.7 2.8 2.9 V VNTCl(hy) hysteresis of VNTCl - 75 - mV VNTC(co) input voltage at pin NTC for detecting temperature cut-off 0.7MTV 0.75MTV 0.8MTV V VNTC(bat) maximum input voltage at pin NTC for detecting battery with NTC 3.22 3.3 3.38 V INTC input current at pin NTC VNTC = 2 V -5 - +5 A VMTV voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V 0.5 - 2.5 V VNTC = 2 V; Tj = 0 to 50 C - -0.25 - % NiCd and NiMH; pin Vstb open-circuit 1.34 1.325 1.40 V NiCd and NiMH; Vstb = 1.5 V 0.99Vstb Vstb 1.01Vstb V open battery 1.86 1.9 1.94 V VNTC/VNTC T/t detection level Voltage regulation Vreg regulation voltage TCVreg temperature coefficient of regulation voltage Vreg = 1.325 V; Tamb = 0 to 45 C 0 60 120 ppm/K gm transconductance of amplifier A3 Vbat = 1.9 V; no battery mode - 2.0 - mA/V Program pin Vstb Vstb open voltage at pin Vstb 1.30 1.325 1.35 V Vstb(im) voltage at pin Vstb for programming inhibit mode 0 - 0.8 V Vstb(st) voltage at pin Vstb for programming voltage regulation at standby NiCd and NiMH 1.0 - 2.2 V Vstb(tc) voltage at pin Vstb for programming trickle charge at standby NiCd and NiMH 2.6 - VS V 1999 Jan 27 14 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries SYMBOL PARAMETER TEA1103; TEA1103T; TEA1103TS CONDITIONS MIN. TYP. MAX. UNIT Program pins; PSD, POD and PTD V4,6,7 voltage level at pins PSD, POD or PTD V4,6,7(1) default (open-circuit) 1.9 2.1 2.3 V voltage level at pins PSD, POD or PTD for programming the divider = 1 0 - 1.2 V V4,6,7(2) voltage level at pins PSD, POD or PTD for programming the divider = 2 1.6 - 2.5 V V4,6,7(4) voltage level at pins PSD, POD or PTD for programming the divider = 4 3.1 - VS V IPODsink protection current for multi-LED indication VPOD = 1.5 V 8 10 12 mA IPTDsink full battery current for multi-LED indication VPTD = 1.5 V 8 10 12 mA IPSDsink refresh current for multi-LED indication VPSD = 1.5 V 8 10 12 mA ILI input leakage current VPOD = 4.25 V; VPTD = 4.25 V; VPSD = 4.25 V 0 - 50 A Program pin FCT VFCT(or) voltage level for programming T/t or Vpeak as fast charge termination NiCd and NiMH 0.0 - 3.3 V VFCT(and) voltage level for programming NiCd and NiMH T/t and Vpeak as fast charge termination 3.7 - VS V VFCT voltage level at pin FCT 2.3 2.6 2.9 V default (open-circuit) Program pin LED VLED(m) output voltage level for programming multi-LED indication 0 - 2.5 V VLED(s) output voltage level for programming single LED indication 3.1 - VP V Isink(max) maximum sink current 8 10 12 mA ILI(LED) input leakage current VLED = 10 V 0 - 70 A VLED = 0.6 V 0 - 5 A - - 15 V Vo(max) 1999 Jan 27 VLED = 1.5 V maximum output voltage 15 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries SYMBOL PARAMETER TEA1103; TEA1103T; TEA1103TS CONDITIONS MIN. TYP. MAX. UNIT Output drivers; AO, LS and PWM IAO(source) analog output source current VAO = 3 V (p-p); VLS = 2.8 V -9 - 0 mA IAO(sink) analog output sink current VAO = 3 V (p-p); VLS = 1.2 V 50 - - A gm1 transconductance of amplifier A1 VIB = 50 mV - 250 - A/V Gv1,2 voltage gain of amplifiers A1 and A2 VAO = 3 V (p-p) - 72 - dB Gv2 voltage gain of amplifier A2 VAO = 2 V (p-p) - 11 - dB ILS(source) maximum source current (pin LS) VLS = 2.25 V -25 -21 -16 A ILS(sink) maximum sink current (pin LS) VLS = 2.25 V 16 21 25 A IOH(PWM) HIGH level output current VPWM = 3 V -19 -15 -11 mA IOL(PWM) LOW level output current VPWM = 0.7 V 10 14 18 mA PWM maximum duty factor - 79 - % - 1 - nA 0.3 - 2 V - -0.25 - % - 0.6 - mV 0.25 0.30 0.35 V Battery monitor; Vbat IVbat battery monitor input current Vbat voltage range of Vpeak detection Vbat/Vbat Vpeak detection level with respect to top level Vbat voltage resolution for Vpeak Vbat = 1.85 V Vbat = 1.85 V; Tj = 0 to 50 C Protections; Vbat Vbat(l) maximum voltage at pin Vbat for detecting low battery voltage Oscillator; pin OSC Vosc(H) HIGH level oscillator switching voltage - 2.5 - V Vosc(L) LOW level oscillator switching voltage - 1.5 - V fosc(min) minimum oscillator frequency Rref = 125 k; Cosc = 400 pF 20.9 23 25.1 kHz fosc(max) maximum oscillator frequency Rref = 12.5 k; Cosc = 400 pF 158 174 190 kHz 1999 Jan 27 16 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... D8 400 H BYV28 (only for more than 3 cells R1 1 k TR3 BC337 R3 1.5 k only for VI (DC)>13V Vsl R4 3.9 k D1 BYD74D R5 750 D2 single multi LED D4 nobattery protection D3 100% D6 refresh 5 16 VS C3 100 nF R16 4.25 V 33 k VS :4 R6 :1 33 k POD 8 VS :4 R8 :1 33 k 9 PTD NTC R17 130 k 6 GND 7 11 VS :4 R10 :1 33 k TEA1103 PSD 17 PWM AO TR4 TIP110 RFSH LS 20 NTC 10 k (25 oC) 24 k R21 R22 16 k 15 k 12 k Vstb T/t and Vpeak T/t or Vpeak Vbat 47 k Rref NiCd 3 NiMH 3 LOAD Vreg adjust. NiCd NiMH 3/6/9 cell NiCd 6 NiMH 6 C5 470 F NiCd 9 NiMH 9 10 14 OSC (3) 17 2 3 R13(2) 5.1 k (0.15A top off) GND C4 220 pF R23 62 k (1A fast charge) R25 40 k (0.1%) R26 8 k (0.1%) R27 8 k (0.1%) R28 10 k (0.1%) Rsense (1A refresh) R14 0.1 (1) Fig.4 Basic test board diagram. Preliminary specification 1.25 x R13 (3) R23 = ----------------------------------------------R14 x I fast - ch arg e MBH545 TEA1103; TEA1103T; TEA1103TS 100 mV 100 mV (1) R14 = -------------------- or R14 = ----------------------------- if not applicable. I fast - ch arg e I refresh R12 0 (Rb) IB 18 handbook, full pagewidth 6 k C2 1.5 nF 19 R18 R20 P2 15 R19 75 k adjust. FCT 4 GND linear mode refresh 1 P1 Tmax 47 k MTV GND SMPS mode TR2 BC337 VP 8.2 k R11 R14 x I top - off (2) R13 = -----------------------------------3 A 12 R9 33 k C1 100 F R2 62 13 R7 33 k D6 BAW62 LED fast D5 R24 80 k (0.1%) R15 270 Philips Semiconductors L1 (SMPS only) Fast charge ICs for NiCd and NiMH batteries TR1 BD231 APPLICATION INFORMATION 1999 Jan 27 VI (DC) 7 to 18 V Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries handbook,Vfull(DC) pagewidth I 7 to 11.5 V TEA1103; TEA1103T; TEA1103TS (D2 for more than 3 NiCd cells) TR1 BD231 + battery (Rsupply = 270 for more than 3 NiCd cells) R2 1.5 k R1 1 k Vsl 13 12 VP LED C1 100 F VS POD :1 GND :4 VS :1 :4 :1 16 5 8 6 9 PTD VS 4.25 V NTC R6 10 k MTV R7 NiCd/NiMH = 7 GND 11 FCT C5 470 F TEA1103 VS PSD 4 1 15 19 Vstb NiCd NiMH 3 cells GND PWM AO TR2 BC337 R3 180 C3 100 nF D1 :4 R10 200 k (1%) RFSH LS 18 20 Vbat Rref 10 14 OSC 17 C2 1.5 nF IB (Rb) 3 2 R4 5.1 k (75 mA top off) GND C4 220 pF (fosc = 75 kHz) R5 0.22 R9 100 k (0.1%) - battery Rsense Fig.5 Linear application diagram. 1999 Jan 27 R8 62 k (0.5 A fast charge) 18 MBH546 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TR4 D8 refresh +BAT D1 R1 C1 TR3 +Vin D7 refresh R11 fast-charge D4 R6 protection R7 D5 R8 100% D6 R4 R3 I b Vbat 1 R13 +Vs D2 D3 number of cells TR2 PWM R2 Vsl C6 MTV P1 C3 R19 NTC R18 1L 2L 3L LIN C2 C7 R9 no-battery R26 R27 R23 R15 GND :4PSD:1 S-LED-M :4POD:1 PTD R10 R28 P2 Vstb R5 R24 LIN D9 R25 D10 R30 L1 PWM TR1 -Vin C5 R16 NTC R17 C4 R29 handbook, full pagewidth TEA1103; TEA1103T; TEA1103TS R12 R22 R21 R20 R14 Vsense FCT SLA Li-Ion dT/dt or V dT/dt and V -BAT GND TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN MBH073 This test board (designed for the TEA1102x) can also be used for the TEA1103x. Fig.6 Component side of printed-circuit board (test board). 1999 Jan 27 19 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS 86.35 handbook, full pagewidth 81.28 MBH072 Dimensions in mm. Fig.7 Track side of printed-circuit board (test board). 1999 Jan 27 20 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS handbook, full pagewidth TR1 +battery TR2 R1 R10 R8 MJIN CIC A&D BJ RAENIL 2011AET +Vin C5 1 R3 PSD D1 R9 C2 R2 POD PTD R4 R7 :1 :4 C1 R6 R5 -Vin C4 C3 -battery MBH071 This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x. Fig.8 Component side of printed-circuit board (linear application). TEA1102 LINEAR JB D&A CIC NIJM handbook, full pagewidth MBH070 This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x. Fig.9 Track side of printed-circuit board (linear application). 1999 Jan 27 21 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS PACKAGE OUTLINES DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 11 20 pin 1 index E 1 10 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c mm 4.2 0.51 3.2 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 inches 0.17 0.020 0.13 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 D e e1 L ME MH w Z (1) max. 6.40 6.22 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.0 0.25 0.24 0.10 0.30 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.078 (1) E (1) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT146-1 1999 Jan 27 REFERENCES IEC JEDEC EIAJ SC603 22 EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-05-24 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 inches 0.10 Z (1) Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013AC 1999 Jan 27 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 23 o 8 0o Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm D SOT339-1 E A X c HE y v M A Z 20 11 Q A2 A (A 3) A1 pin 1 index Lp L 1 10 w M bp e detail X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 2.0 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 7.4 7.0 5.4 5.2 0.65 7.9 7.6 1.25 1.03 0.63 0.9 0.7 0.2 0.13 0.1 0.9 0.5 8 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT339-1 1999 Jan 27 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 93-09-08 95-02-04 MO-150AE 24 o Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE * For packages with leads on two sides and a pitch (e): The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Surface mount packages REFLOW SOLDERING MANUAL SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. 1999 Jan 27 When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 25 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS Suitability of IC packages for wave, reflow and dipping soldering methods SOLDERING METHOD MOUNTING PACKAGE WAVE suitable(2) Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount HLQFP, HSQFP, HSOP, SMS not PLCC(4), suitable(3) REFLOW(1) DIPPING - suitable suitable - suitable suitable - LQFP, QFP, TQFP not recommended(4)(5) suitable - SQFP not suitable suitable - suitable - SO SSOP, TSSOP, VSO not recommended(6) Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jan 27 26 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T; TEA1103TS NOTES 1999 Jan 27 27 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 489 4339/4239, Fax. +30 1 481 4240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com (c) Philips Electronics N.V. 1999 SCA61 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 465002/750/03/pp28 Date of release: 1999 Jan 27 Document order number: 9397 750 04794