TEA1103TS - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Preliminary speciﬁcation

Supersedes data of 1997 Oct 09

File under Integrated Circuits, IC03

1999 Jan 27

INTEGRATED CIRCUITS

TEA1103; TEA1103T;

TEA1103TS

Fast charge ICs for NiCd and NiMH

batteries

1999 Jan 27 2

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

FEATURES

•Safe and fast charging of Nickel Cadmium (NiCd) and

Nickel Metal Hydride (NiMH) batteries

•Pin compatible with the TEA1102x, fast charge ICs for

LiIon, SLA, NiCd and NiMH batteries

•Three charge states for NiCd or NiMH; fast, top-off and

trickle or voltage regulation (optional)

•Adjustable fast charge current [0.5CA to 5CA nominal

(CA = Capacity Amperes)]

•DC top-off and pulsating trickle charge current (NiCd

and NiMH)

•Temperature dependent ∆T/∆t battery full detection

•Automatic switch-over to accurate peak voltage

detection (−1⁄4%) if no NTC is applied

•Possibility to use both ∆T/∆t and peak voltage detection

as main fast charge termination

•Support of inhibit during all charging states

•Manual refresh with regulated adjustable discharge

current (NiCd and NiMH)

•Voltage regulation in the event of no battery

•Support of battery voltage based charge indication and

buzzer signalling at battery insertion, end of refresh and

at full detection

•Single, dual and separate LED outputs for indication of

charge status state

•Minimum and maximum temperature protection

•Time-out protection

•Short-circuit battery voltage protection

•Can be applied with few low-cost external components.

GENERAL DESCRIPTION

The TEA1103x are fast charge ICs which are able to fast

charge NiCd and NiMH batteries.

The main fast charge termination for NiCd and NiMH

batteries are ∆T/∆t and peak voltage detection, both of

which are well proven techniques. The TEA1103x

automatically switches over from ∆T/∆t to peak voltage

detection if the thermistor fails or is not present. The ∆T/∆t

detection sensitivity is temperature dependent, thus

avoiding false charge termination. Three charge states

can be distinguished; fast, top-off and trickle.

Several LEDs, as well as a buzzer, can be connected to

the TEA1103x for indicating battery insertion, charge

states, battery full condition and protection mode.

The TEA1103x are contained in a 20-pin package and are

manufactured in a BiCMOS process, essentially for

integrating the complex mix of requirements in a single

chip solution. Only a few external low cost components are

required in order to build a state of the art charger.

The TEA1103x are pin compatible with the TEA1102x, fast

charge ICs for LiIon, SLA, NiCd and NiMH batteries.

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TEA1103 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1

TEA1103T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

TEA1103TS SSOP20 plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1

1999 Jan 27 3

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VPsupply voltage 5.5 −11.5 V

IPsupply current outputs off −4−mA

∆VNTC/VNTC temperature rate dependent

(∆T/∆t) detection level VNTC =2V;

j= 0 to 50 °C−−0.25 −%

∆Vbat/Vbat voltage peak detection level with

respect to top value Vbat =2V;

j= 0 to 50 °C−−0.25 −%

IVbat input current battery monitor Vbat = 0.3 to 1.9 V −1−nA

Vbat(l) voltage at pin 19 for detecting low

battery voltage −0.30 −V

IIB battery charge current fast charge 10 −100 µA

top-off mode −3−µA

IB(max) maximum battery charge current voltage regulation full

NiCd and NiMH battery −10 −µA

IB(Lmax) maximum load current no battery −40 −µA

osc oscillator frequency 10 −200 kHz

Vreg regulating voltage NiCd and NiMH

(pin Vstb open-circuit) −1.325 or

Vstb

−V

open battery −1.9 −V

1999 Jan 27 4

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

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BLOCK DIAGRAM

handbook, full pagewidth

PROTECTION

NTC

present

Tcut-off

battery

low

end

refresh

no-

battery

Tmin

Tmax

0.3 V

1 V

1.9 V

3.3 V

2.8 V

1 V

0.75 V

4.25 V

156

kΩ

DA/AD

CONVERTER

1.325 V/Vstb

NiCd

NIMH

1.9 V

no-

battery

Vbat

Vreg

CHARGE CONTROL

AND

OUTPUT DRIVERS

fast

charge

1.25/Rref

top

off

3 µA

standby

current

10 µA

load

current

40 µA

4.25 V

OSC

PWM

SET

100 mV refresh

CONTROL LOGIC

SUPPLY

BLOCK

TIMER

AND

CHARGE

STATUS

INDICATION

Vbat

MTV

NTC

Vbat Vstb Rref OSC

19 1 20 14

PWM

RFSH

PSD

LED

POD

PTD

12 13 16 113

VPVsl VSGND FCT

TEA1103

A34×

MBH547

Fig.1 Block diagram.

1999 Jan 27 5

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

PINNING

SYMBOL PIN DESCRIPTION

Vstb 1 standby regulation voltage input

(NiCd and NiMH)

IB 2 charge current setting

GND 3 ground

PSD 4 program pin sample divider

LED 5 LED output

POD 6 program pin oscillator divider

PTD 7 program pin time-out divider

NTC 8 temperature sensing input

MTV 9 maximum temperature voltage

RFSH 10 refresh input/output

FCT 11 fast charge termination and

battery chemistry identiﬁcation

VP12 positive supply voltage

Vsl 13 switched reference voltage output

OSC 14 oscillator input

PWM 15 pulse width modulator output

VS16 stabilized reference voltage

LS 17 loop stability pin

AO 18 analog output

Vbat 19 single-cell battery voltage input

Rref 20 reference resistor pin Fig.2 Pin configuration.

handbook, halfpage

TEA1103

MBH539

Vstb Rref

Vbat

Vsl

PWM

OSC

FCT

GND

PSD

LED

POD

PTD

NTC

MTV

RFSH

1999 Jan 27 6

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

INTRODUCTION

All battery types are initially fast charged with an

adjustable high current. Fast charge termination depends

upon the battery type. With NiCd and NiMH batteries the

main fast charge termination will be the∆T/∆t (temperature

detection) and/or peak voltage detection.

The fast charge period is followed by a top-off period for

NiCd and NiMH batteries. During the top-off period the

NiCd and NiMH batteries are charged to maximum

capacity by reduced adjustable charge current.

The top-off period ends after time-out or one hour

respectively.

After the top-off period, the TEA1103x switches over to the

standby mode. For NiCd and NiMH batteries either the

voltage regulation or trickle charge mode can be selected.

The voltage regulation mode is selected when the battery

includes a fixed load. Trickle charge prevents a discharge

of the battery over a long period of time.

Charging principles

CHARGING NiCd/NiMH BATTERIES

Fast charging of the battery begins when the power supply

voltage is applied and at battery insertion.

During fast charge of NiCd and NiMH batteries, the battery

temperature and voltage are monitored. Outside the

initialized temperature and voltage window, the system

switches over to the top-off charge current.

The TEA1103x supports detection of fully charged NiCd

and NiMH batteries by either of the following criteria:

•∆T/∆t

•Voltage peak detection.

If the system is programmed with ∆T/∆t and Vpeak or, ∆T/∆t

or Vpeak as the main fast charge termination, it

automatically switches to voltage peak detection if the

battery pack is not provided with a temperature sensing

input (NTC). In this way both packages, with and without

temperature sensor, can be used randomly independent of

the applied full detection method. Besides ∆T/∆t and/or

voltage peak detection, fast charging is also protected by

temperature cut-off and time-out.

To avoid false fast charge termination by peak voltage

detection or ∆T/∆t, full detection is disabled during a short

hold-off period at the start of a fast charge session.

After fast charge termination, the battery is extra charged

by a top-off period. During this period of approximately one

hour, the charge current is lowered thus allowing the

battery to be charged to nearly 100% before the system

switches over to standby.

After the battery has been charged to nearly 100% by the

top-off period, discharge of the battery (caused by a load

or by the self-discharge) can be avoided by voltage

regulation or by trickle charge.

If batteries are charged in combination with a load, the

TEA1103x can be programmed to apply voltage regulation

during the standby mode. In this way, discharge of the

battery caused by self-discharge or by an eventual load is

avoided. The regulating voltage is adjustable to the

voltage characteristic of the battery. For battery safety the

charge current is limited and the temperature is monitored

during voltage regulation. If a trickle charge is applied, the

self-discharge of the battery will be compensated by a

pulsating charge current.

To avoid the so called ‘memory effect’ in NiCd batteries, a

refresh can be manually activated. The discharge current

is regulated by the IC in combination with an external

power transistor. After discharging the battery to 1 V per

cell, the system automatically switches over to fast charge.

FUNCTIONAL DESCRIPTION

Control logic

The main function of the control logic is to support the

communication between several blocks. It also controls

the charge method, initialization and battery full detection.

The block diagram of the TEA1103x is illustrated in Fig.1.

Conditioning charge method and initializations

At system switch-on, or at battery insertion, the control

logic sets the initialization mode in the timer block.

After the initialization time the timer program pins can be

used to indicate the charging state using several LEDs.

The charge method is defined at the same time by the

following methods:

•If the FCT pin is floating, the system will charge the

battery according to the charge characteristic of NiCd

and NiMH batteries.

•The standby charge method (NiCd and NiMH), trickle

charge or voltage regulation, is defined by the input pin

Vstb. By biasing this voltage with a set voltage, the output

voltage will be regulated to the Vstb set voltage. If this pin

is connected to VS, or no NTC is connected the system

applies trickle charge.

1999 Jan 27 7

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

If pin RFSH is connected to ground by depressing the

switch, the TEA1103x discharges the battery via an

external transistor connected to pin RFSH. The discharge

current is regulated with respect to the external (charge)

sense resistor (Rsense). End-of-discharge is reached when

the battery is discharged to 1 V per cell. Refreshing the

battery can only be activated during charging of NiCd and

NiMH batteries.

The inhibit mode has the main priority. This mode is

activated when the Vstb input pin is connected to ground.

Inhibit can be activated at any charge/discharge state,

whereby the output control signals will be zero, all LEDs

will be disabled and the charger timings will be set on hold.

Table 1 gives an operational summary.

Table 1 Functionality of program pins

Notes

1. Where X = don’t care.

2. Not low means floating or high.

3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.

4. The NTC voltage is outside the window for NTC detection.

5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification.

FUNCTION FCT NTC RFSH Vstb

Inhibit X(1) X(1) X(1) low

Refresh not low(2) X(1) low not low

∆T/∆t detection ﬂoating note 3 not low not low

∆T/∆t and voltage peak detection high note 3 not low not low

Voltage peak detection not low note 4 not low not low

Trickle charge at standby not low X(1) not low high

not low note 4 not low not low

Voltage regulation at standby not low note 3 not low ﬂoating(5)

Supply block

The supply block delivers the following outputs:

•A power-on reset pulse to reset all digital circuitry at

battery insertion or supply switch-on. After a general

reset the system will start fast charging the battery.

•A 4.25 V stabilized voltage source (VS) is externally

available. This source can be used to set the thermistor

biasing, to initialize the programs, to supply the external

circuitry for battery voltage based charge indication and

to supply other external circuitry.

•A 4.25 V bias voltage (Vsl) is available for use for more

indication LEDs. This output pin will be zero during the

initialization period at start-up, thus avoiding any

interference of the extra LEDs when initializing.

Charge control

The charge current is sensed via a low-ohmic resistor

(Rsense), see Fig.4. A positive voltage is created across

resistor Rb by means of a current source Iref which is set by

Rref in the event of fast charge and by an internal bias

current source in the event of top-off and trickle charge

(IIB), see Fig.1. The positive node of Rb will be regulated to

zero via error amplifier A1, which means that the voltage

across Rb and Rsense will be the same. The fast charge

current is defined by the following equation: (1)

The output of amplifier A1 is available at the loop stability

pin LS, consequently the time constant of the current loop

can be set. When Vpeak (NiCd and NiMH) is applied, the

current sensing for the battery voltage will be reduced,

implying that the charge current will be regulated to zero

during:

(2)

Actually battery voltage sensing takes place in the last

oscillator cycle of this period.

Ifast Rsense

×RbIref

×=

tsense 210 POD×tosc

×=

1999 Jan 27 8

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

To avoid modulation on the output voltage, the top-off

charge current is DC regulated, defined by the following

equation:

(3)

where:

(4)

The top-off charge current will be approximately 0.15CA,

which maximizes the charge in the battery under safe and

slow charging conditions. The top-off charge period will be

approximately one hour, so the battery will be extra

charged with approximately 0.15 Q. In this way the battery

is fully charged before the system switches over to

standby.

When pin 1 (Vstb) is connected to VS, or no NTC is

connected the system compensates the (self) discharge of

the battery by trickle charge. The trickle charge current will

be pulsating, defined by the following equation:

(5)

During the non current periods at trickle charge the charge

current is regulated to zero, so that the current for a load

connected in series across the battery with the sense

resistor will be supplied by the power supply and not by the

battery.

If at pin 1 (Vstb) a reference voltage is set in accordance

with the specification, and no NTC is connected the charge

mode will switch over from current to voltage regulation

after top-off. The reference regulating voltage can be

adjusted to the battery characteristic by external resistors

connected to pin Vstb.

This reference voltage has to be selected in such a way

that it equals the rest voltage of the battery. By using

voltage regulation, the battery will not be discharged at a

load occurrence. If the Vstb input pin is floating, the

TEA1103x will apply voltage regulation at 1.325 V during

the standby mode (NiCd and NiMH). The current during

voltage regulation is limited to 0.5CA. If the battery charge

current is maximized to 0.5CA for more than 2 hours

charging will be stopped. Moreover, if the temperature

exceeds Tmax, charging will be stopped completely.

As voltage regulation is referred to one cell, the voltage on

the Vbat pin must be the battery voltage divided by the

number of cells (NiCd and NiMH).

When charging, the standby mode can only be entered

after a certain period of time depending on time-out.

To support full test of the TEA1103x at application, the

standby mode is also entered when Vbat <V

bat(l) at top-off.

Itop off–Rsense

×Rb310

6–

××=

top off–227 TOD×tosc

×=

Itrickle Rsense

×Rb15

------

×10 6–

×=

Timer

The timing of the circuit is controlled by the oscillator

frequency.

The timer block defines the maximum charging time by

‘time-out’. At a fixed oscillator frequency, the time-out time

can be adapted by the Programmable Time-out Divider

(PTD) using the following equation.

(6)

The time-out timer is put on hold by low voltage,

temperature protection and during the inhibit mode.

The Programmable Oscillator Divider (POD) enables the

oscillator frequency to be increased without affecting

the sampling time and time-out. Raising the oscillator

frequency will reduce the size of the inductive components

that are used.

At fast charging, after battery insertion, after refresh or

supply interruption, the full detector will be disabled for a

period of time to allow a proper start with flat or inverse

polarized batteries. This hold-off period is disabled at fast

charging by raising pin Vstb to above ±5 V (once).

So for test options it is possible to slip the hold-off period.

The hold-off time is defined by the following equation:

(7)

Table 2 gives an overview of the settings of timing and

discharge/charge currents.

ttime out–226 POD×PTD×tosc

×=

thold off–25–ttime out–

×=

1999 Jan 27 9

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Table 2 Timing and current formulae

SYMBOL DESCRIPTION FORMULAE

tosc timing see Fig.3

Tsampling (∆T/∆t) NTC voltage sampling frequency 217 ×POD ×PSD ×tosc

Tsampling (Vpeak) battery voltage sampling frequency 216 ×POD ×tosc

ttop-off 227 ×POD ×tosc

ttime-out 226 ×POD ×PTD ×tosc

thold-off 2−5×ttime-out

tLED inhibit or protection 214 ×POD ×tosc

tsense 210 ×POD ×tosc

tswitch 221 ×POD ×PTD ×tosc

Ifast charge/discharge currents

Itop-off

Itrickle

Iload-max

IRFSH

Rsense

----------------- Vref

Rref

----------

Rsense

----------------- 3×10 6–

Rsense

----------------- 15

------

×10 6–

Rsense

----------------- 40×10 6–

100 mV

Rsense

--------------------

1999 Jan 27 10

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter.

handbook, full pagewidth

200

fosc

(kHz)

00 30 60 90 120 150

ttime-out (min)180 10

12.5

(R23 min)

PTD programming 125

(R23 max)

30 50 70 90 R23 (kΩ)

(pF)

110

100

150

220

390

560

820

1500

130

MGD280

120

160

(GND) :2

(n.c.) :4

(+VS)

prefered

oscillator

range

(POD = GND)

prefered

oscillator

range

(POD = n.c.)

prefered

oscillator

range

(POD = +VS)

LED indication

With few external components, indication LEDs can be

connected to the program pins and the LED pin of the

TEA1103x. These program pins change their function from

an input to an output pin after a short initialization time at

system switch-on or battery insertion. Output pin Vsl

enables the external LEDs to be driven and avoids

interaction with the programming of the dividers during the

initialization period.

The applied LEDs indicate:

•Protection

•Refresh

•Fast charge

•100%

•No-battery.

The LED output pin can also indicate the charging state by

one single LED. The indication LED can be connected

directly to the LED output. This single LED indicates:

•Fast charge (LED on)

•100% or refresh (LED off)

•Protection or inhibit (LED floating).

The refresh can be indicated by an extra LED connected

to pin 4 (PSD). A buzzer can also be driven from the

TEA1103x to indicate battery insertion end of refresh or full

battery.

AD/DA converter

When battery full is determined by peak voltage detection,

the Vbat voltage is sampled at a rate given by the following

equation:

(8)

The analog value of a Vbat sample is then digitized and

stored in a register. On the following sample, the digitized

value is converted back to the analog value of Vbat and

compared with the ‘new’ Vbat sample.

tsampling Vpeak

()2

16 POD×tosc

×=

1999 Jan 27 11

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

At an increase of the battery voltage the 14-bit

Analog-to-Digital Converter (ADC) is refreshed with this

new value. Therefore, the digitized value always

represents the maximum battery voltage. A decreased

Vbat voltage is not stored, but is compared to the stored

value.

Full is detected when the voltage decrease of Vbat is 1⁄4%

of the stored peak battery value. To avoid interference due

to the resistance of the battery contacts during battery

voltage sensing, the charge current is regulated to zero

during t = 210 ×POD ×tosc, via the regulation pins AO and

PWM. At the last period, the Vbat voltage is sensed and

stored in a sample-and-hold circuit. This approach

ensures very accurate detection of the battery full

condition (minus 1⁄4%).

When battery full is determined by ∆T/∆t, the voltage on

the NTC pin is used as the input voltage to the AD/DA

converter. The sampling time at ∆T/∆t sensing is given by

the following equation:

(9)

After this initialized sample time the new temperature

voltage is compared to the preceding AD/DA voltage and

the AD/DA is refreshed with this new value. A certain

increase of the temperature is detected as full battery,

depending on the initialization settings. The decision of full

detection by ∆T/∆t or Vpeak is digitally filtered thus avoiding

false battery full detection.

tsampling ∆T

∆t

-------



2

17 POD×PSD×tosc

×=

Output drivers

The charge current regulation signal is available at two

output pins, AO and PWM.

ANALOG OUTPUT

The analog control voltage output at pin 18 (AO) can be

used to drive an opto-coupler in mains separated

applications when an external resistor is connected

between AO and the opto-coupler. The maximum current

through the opto-coupler diode is 2 mA. The voltage gain

of amplifier A2 is typical 11 dB (times 3.5). The DC voltage

transfer is given by the following equation:

VAO = 3.5 ×(VLS −1.35).

The AO output can be used for:

•Linear (DC) applications

•Not mains isolated SMPS with a separate controller

•Mains isolated SMPS, controlled by an opto-coupler.

PULSE WIDTH MODULATOR (PWM)

The LS voltage is compared internally with the oscillator

voltage to deliver a pulse width modulated output at PWM

(pin 15) to drive an output switching device in a SMPS

converter application via a driver stage. The PWM output

is latched to prevent multi-pulsing. The maximum duty

factor is internally fixed to 79% (typ.). The PWM output can

be used for synchronization and duty factor control of a

primary SMPS via a pulse transformer.

1999 Jan 27 12

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); note 1

Note

1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the

voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not

violated; current ratings are valid provided that the power rating is not violated.

QUALITY SPECIFICATION

In accordance with the general quality specification for integrated circuits:

“SNW-FQ-611E

”.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltages

VPpositive supply voltage −0.5 −+11.5 V

VoLED output voltage at pin 5 −0.5 −+15 V

Vnvoltage at pins PWM, LS and NTC −0.5 −+VSV

VIB voltage at pin 2 −0.5 −+1.0 V

Currents

IVS current at pin 16 −3−+0.01 mA

IVsl current at pin 13 −1−+0.3 mA

IoLED output current at pin 5 −−12 mA

IAO output current at pin 18 −10 −+0.05 mA

IoPWM output current at pin 15 −15 −+14 mA

IRref current at pin 20 −1−+0.01 mA

IPpositive supply current Tj< 100 °C−−30 mA

IP(stb) supply standby current VP=4V −35 45 µA

Dissipation

Ptot total power dissipation Tamb =85°C

SOT146-1 −−1.2 W

SOT163-1 −−0.6 W

SOT339-1 −−0.45 W

Temperatures

Tamb operating ambient temperature −20 −+85 °C

Tjjunction temperature −−150 °C

Tstg storage temperature −55 −+150 °C

1999 Jan 27 13

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

CHARACTERISTICS

VP= 10 V; Tamb =25°C; Rref =62kΩ; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies; pins VP, VS, Rref and Vsl

VPsupply voltage 5.5 −11.5 V

IPsupply current outputs off; VP= 11.5 V −46mA

stb standby current VP=4V −35 45 µA

Vclamp clamping voltage (pin 12) Iclamp = 30 mA 11.5 −12.8 V

Vstart start voltage 6.1 6.4 6.7 V

VLSP low supply protection level 5.1 5.3 5.5 V

VSsource voltage (stabilized) IS= 2 mA 4.14 4.25 4.36 V

VSL LED source voltage ILED =50µA 4.05 4.25 4.45 V

Vref reference voltage Iref =20µA; VP= 10 V 1.21 1.25 1.29 V

TCVref temperature coefﬁcient of the

reference voltage Tamb =0to45°C;

Iref =20µA; Vref = 1.25 V 0±60 ±120 ppm/K

∆Vref/∆VPpower supply rejection ratio of

the reference voltage f = 100 Hz; VP=8V;

∆V

P= 2 V (p-p) −46 −−dB

∆Vref load rejection of source

voltage ∆IS= 20 mA; VP=10V −− 5mV

Rref current range of reference

resistor 10 −100 µA

Charge current regulation; pins IB and Rref

IIB/Iref fast charge ratio VIB =0

ref =10µA 0.93 1.03 1.13

Iref = 100 µA 0.93 1.0 1.07

VthIB threshold voltage at pin IB Tamb =25°C−2−+2 mV

Tamb =0to45°C−3−+3 mV

IIB charge current top-off mode; VIB = 0 2.6 3.2 3.8 µA

IIB(max) maximum charge current voltage regulation full

NiCd/NiMH battery; VIB =0 9 10.5 12 µA

IIB(Lmax) maximum load current open battery; VIB = 0 34 42 50 µA

IIB(LI) input leakage current currentless mode −− 170 nA

Refresh; pin RFSH

VRsense sense resistor voltage ; refresh

mode; Irefresh =18mA

75 100 125 mV

VRFSH refresh voltage for

programming start of refresh NiCd/NiMH 0 −250 mV

Vbat voltage at pin Vbat for

detecting end of refresh NiCd/NiMH 0.96 1.0 1.04 V

Irefresh VIB

Rsense

-----------------

1999 Jan 27 14

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Isource(max) maximum source current VIB =75mV; V

P=10V

RFSH = 2.7 V;

Tamb =25°C

1.4 2 2.6 mA

VRFSH(max) maximum refresh voltage IRFSH = 1 mA 2.7 −−V

RFSH(off) voltage at pin RFSH when

refresh is off 700 770 840 mV

Temperature related inputs; pins NTC and MTV

VNTCh input voltage at pin NTC for

detecting high temperature pin MTV open-circuit 0.9 1 1.1 V

MTV setting 0.95MTV MTV 1.05MTV V

VNTCh(hy) hysteresis of VNTCh −80 −mV

VNTCl input voltage at pin NTC,

detecting low temperature 2.7 2.8 2.9 V

VNTCl(hy) hysteresis of VNTCl −75 −mV

VNTC(co) input voltage at pin NTC for

detecting temperature cut-off 0.7MTV 0.75MTV 0.8MTV V

VNTC(bat) maximum input voltage at

pin NTC for detecting battery

with NTC

3.22 3.3 3.38 V

INTC input current at pin NTC VNTC =2V −5−+5 µA

VMTV voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V

0.5 −2.5 V

∆VNTC/VNTC ∆T/∆t detection level VNTC =2V; T

j= 0 to 50 °C−−0.25 −%

Voltage regulation

Vreg regulation voltage NiCd and NiMH;

pin Vstb open-circuit 1.34 1.325 1.40 V

NiCd and NiMH;

Vstb = 1.5 V 0.99Vstb Vstb 1.01Vstb V

open battery 1.86 1.9 1.94 V

TCVreg temperature coefﬁcient of

regulation voltage Vreg = 1.325 V;

Tamb =0to45°C0±60 ±120 ppm/K

gmtransconductance of ampliﬁer

A3 Vbat = 1.9 V;

no battery mode −2.0 −mA/V

Program pin Vstb

Vstb open voltage at pin Vstb 1.30 1.325 1.35 V

Vstb(im) voltage at pin Vstb for

programming inhibit mode 0−0.8 V

Vstb(st) voltage at pin Vstb for

programming voltage

regulation at standby

NiCd and NiMH 1.0 −2.2 V

Vstb(tc) voltage at pin Vstb for

programming trickle charge at

standby

NiCd and NiMH 2.6 −VSV

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jan 27 15

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Program pins; PSD, POD and PTD

V4,6,7 voltage level at pins PSD,

POD or PTD default (open-circuit) 1.9 2.1 2.3 V

V4,6,7(1) voltage level at pins PSD,

POD or PTD for programming

the divider = 1

0−1.2 V

V4,6,7(2) voltage level at pins PSD,

POD or PTD for programming

the divider = 2

1.6 −2.5 V

V4,6,7(4) voltage level at pins PSD,

POD or PTD for programming

the divider = 4

3.1 −VSV

IPODsink protection current for

multi-LED indication VPOD = 1.5 V 8 10 12 mA

IPTDsink full battery current for

multi-LED indication VPTD = 1.5 V 8 10 12 mA

IPSDsink refresh current for multi-LED

indication VPSD = 1.5 V 8 10 12 mA

ILI input leakage current VPOD = 4.25 V;

VPTD = 4.25 V;

VPSD = 4.25 V

0−50 µA

Program pin FCT

VFCT(or) voltage level for programming

∆T/∆t or Vpeak as fast charge

termination

NiCd and NiMH 0.0 −3.3 V

VFCT(and) voltage level for programming

∆T/∆t and Vpeak as fast charge

termination

NiCd and NiMH 3.7 −VSV

VFCT voltage level at pin FCT default (open-circuit) 2.3 2.6 2.9 V

Program pin LED

VLED(m) output voltage level for

programming multi-LED

indication

0−2.5 V

VLED(s) output voltage level for

programming single LED

indication

3.1 −VPV

Isink(max) maximum sink current VLED = 1.5 V 8 10 12 mA

ILI(LED) input leakage current VLED =10V 0 −70 µA

VLED = 0.6 V 0 −5µA

Vo(max) maximum output voltage −− 15 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jan 27 16

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Output drivers; AO, LS and PWM

IAO(source) analog output source current VAO = 3 V (p-p);

VLS = 2.8 V −9−0mA

AO(sink) analog output sink current VAO = 3 V (p-p);

VLS = 1.2 V 50 −−µA

m1 transconductance of ampliﬁer

A1 VIB =50mV −250 −µA/V

Gv1,2 voltage gain of ampliﬁers

A1 and A2 VAO = 3 V (p-p) −72 −dB

Gv2 voltage gain of ampliﬁer A2 VAO = 2 V (p-p) −11 −dB

ILS(source) maximum source current

(pin LS) VLS = 2.25 V −25 −21 −16 µA

ILS(sink) maximum sink current

(pin LS) VLS = 2.25 V 16 21 25 µA

IOH(PWM) HIGH level output current VPWM =3V −19 −15 −11 mA

IOL(PWM) LOW level output current VPWM =0.7V 1014 18mA

PWM maximum duty factor −79 −%

Battery monitor; Vbat

IVbat battery monitor input current Vbat = 1.85 V −1−nA

Vbat voltage range of Vpeak

detection 0.3 −2V

∆V

bat/Vbat Vpeak detection level with

respect to top level Vbat = 1.85 V;

Tj= 0 to 50 °C−−0.25 −%

∆Vbat voltage resolution for Vpeak −0.6 −mV

Protections; Vbat

Vbat(l) maximum voltage at pin Vbat

for detecting low battery

voltage

0.25 0.30 0.35 V

Oscillator; pin OSC

Vosc(H) HIGH level oscillator switching

voltage −2.5 −V

Vosc(L) LOW level oscillator switching

voltage −1.5 −V

fosc(min) minimum oscillator frequency Rref = 125 kΩ;

Cosc = 400 pF 20.9 23 25.1 kHz

fosc(max) maximum oscillator frequency Rref = 12.5 kΩ;

Cosc = 400 pF 158 174 190 kHz

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jan 27 17

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

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APPLICATION INFORMATION

handbook, full pagewidth

MBH545

1213

NTC

C3 100 nF

4.25 V

NTC

10 kΩ

(25 oC)

R19

75 kΩ

MTV

FCT

Vstb

Vbat

Rref

OSC

GND

R16

R15

270 Ω

R24

80 kΩ

(0.1%)

R17

R20

∆T/∆t

and

Vpeak

∆T/∆t

Vpeak

R21

R22

Tmax

adjust.

Vreg

adjust.

8.2 kΩ

130 kΩR18

24 kΩ

47 kΩ

16 kΩ15 kΩ12 kΩ

Rsense

(1A refresh)

R14 0.1 Ω(1)

NiCd 9

NiCd

NiMH

3/6/9 cell

NiMH 9

NiCd 6

NiMH 6

NiCd 3

NiMH 3

(3)

R25

40 kΩ

(0.1%)

R23

62 kΩ

(1A fast

charge)

220

470

µF

R26

8 kΩ

(0.1%) R28

10 kΩ

(0.1%)

R27

8 kΩ

(0.1%)

Vsl

LED

:1 6

POD

GND

protection

fast

33 kΩ

:1 7

PTD

GND

100%

D3 BAW62

33 kΩ

:1 4

PSD

PWM

SMPS mode

linear mode 18

RFSH

GND

refresh

D6 33 kΩ

R10

33 kΩ

R11

single

multi

LED

750

Ω

62 Ω

kΩ

1.5 kΩ

no-

battery

TR3

BC337

TR2

BC337

100 µF

TR1

BD231

BYD74D

VI (DC)>13V

R4 3.9 kΩ

(SMPS only)

VI (DC)

7 to 18 V

400 µHBYV28

(only for

more than

3 cells

R13(2)

5.1 kΩ

(0.15A top off)

1.5 nF

R12

0 Ω

(Rb)

TEA1103

refresh

TR4

TIP110

6 kΩ

LOAD

only for

Fig.4 Basic test board diagram.

(1) or if not applicable.

(2)

(3)

R14 100 mV

Irefresh

--------------------

=R14 100 mV

Ifast ch earg–

-----------------------------

R13 R14 Itop off–

3µA

------------------------------------

R23 1.25 R13×

R14 Ifast ch earg–

-----------------------------------------------

1999 Jan 27 18

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Fig.5 Linear application diagram.

handbook, full pagewidth

MBH546

13 12 VP

R10

200 kΩ

(1%)

100 kΩ

(0.1%)

Vsl

16 VS

8NTC

9MTV

11 FCT

1Vstb

19 Vbat

20 Rref

14 OSC

3GND

LED

(Rsupply = 270 Ω for more than 3 NiCd cells)

(D2 for more than 3 NiCd cells)

POD

PTD

TEA1103

GND

PSD 4

PWM 15

AO 18

RFSH 10

LS 17

IB 2

GND

5.1 kΩ

(75 mA top off)

(Rb)

TR2

BC337

180 Ω

C2 1.5 nF

R5 0.22 Ω

Rsense

1 kΩ

1.5

kΩ

10 kΩ

TR1 BD231

VI (DC)

7 to 11.5 V

100 µFC5

470 µF

100 nF

4.25 V

NiCd/NiMH = ∞

220 pF

(fosc =

75 kHz)

62 kΩ

(0.5 A

fast

charge)

− battery

+ battery

NiCd

NiMH

3 cells

1999 Jan 27 19

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Fig.6 Component side of printed-circuit board (test board).

handbook, full pagewidth

MBH073

TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN

R28

Vsense

R14

R19

R26

1L 2L 3L

R27

R25

Vstb

R24

R16

R17 R20

R21

R22

R29

R12

R10 R4R3 R15 R23

R30

R13

GND

Vsl

R11

R9 R18

MTV

FCT

SLA

Li-Ion

dT/dt or V

dT/dt and V

TR2

number

cells

LIN

PWM

NTC

refresh

fast-charge

protection

100%

no-battery

−Vin −BAT

+Vin

+Vs

+BAT

PTD

TR1

TR4

TR3

refresh

D10

LIN

:4PSD:1 :4POD:1S-LED-M

Vbat

This test board (designed for the TEA1102x) can also be used for the TEA1103x.

1999 Jan 27 20

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Fig.7 Track side of printed-circuit board (test board).

handbook, full pagewidth

MBH072

86.35

81.28

Dimensions in mm.

1999 Jan 27 21

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Fig.8 Component side of printed-circuit board (linear application).

handbook, full pagewidth

MBH071

TEA1102 LINEAR JB D&A CIC NIJM

+Vin +battery

−Vin −battery

TR1

R1 R8

R2 R4

C3 C4

R10

PSD

POD

PTD:1 :4

TR2

This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.

Fig.9 Track side of printed-circuit board (linear application).

handbook, full pagewidth

MBH070

TEA1102 LINEAR JB D&A CIC NIJM

This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.

1999 Jan 27 22

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

PACKAGE OUTLINES

UNIT A

max. 1 2 b1cD E e M

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT146-1 92-11-17

95-05-24

min. A

max. bZ

max.

1.73

1.30 0.53

0.38 0.36

0.23 26.92

26.54 6.40

6.22 3.60

3.05 0.2542.54 7.62 8.25

7.80 10.0

8.3 2.04.2 0.51 3.2

0.068

0.051 0.021

0.015 0.014

0.009 1.060

1.045 0.25

0.24 0.14

0.12 0.010.10 0.30 0.32

0.31 0.39

0.33 0.0780.17 0.020 0.13

SC603

(e )

seating plane

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)

(1) (1)

DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1

1999 Jan 27 23

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

UNIT A

max. A1A2A3bpcD

(1) E(1) (1)

ELL

pQZ

ywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

inches

2.65 0.30

0.10 2.45

2.25 0.49

0.36 0.32

0.23 13.0

12.6 7.6

7.4 1.27 10.65

10.00 1.1

1.0 0.9

0.4 8

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT163-1

detail X

0.25

075E04 MS-013AC

pin 1 index

0.10 0.012

0.004 0.096

0.089 0.019

0.014 0.013

0.009 0.51

0.49 0.30

0.29 0.050

1.4

0.055

0.419

0.394 0.043

0.039 0.035

0.016

0.01

0.25

0.01 0.004

0.043

0.016

0.01

0 5 10 mm

scale

vMA

(A )

SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

95-01-24

97-05-22

1999 Jan 27 24

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

UNIT A1A2A3bpcD

(1) E(1) eH

ELL

pQ(1)

Zywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.21

0.05 1.80

1.65 0.38

0.25 0.20

0.09 7.4

7.0 5.4

5.2 0.65 7.9

7.6 0.9

0.7 0.9

0.5 8

0.131.25 0.2 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

1.03

0.63

SOT339-1 MO-150AE 93-09-08

95-02-04

detail X

vMA

(A )

110

20 11

0.25

pin 1 index

0 2.5 5 mm

scale

SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1

max.

2.0

1999 Jan 27 25

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

SOLDERING

Introduction

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mount components are mixed on

one printed-circuit board. However, wave soldering is not

always suitable for surface mount ICs, or for printed-circuit

boards with high population densities. In these situations

reflow soldering is often used.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joints for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (Tstg(max)). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

MANUAL SOLDERING

Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bit

is less than 300 °C it may remain in contact for up to

10 seconds. If the bit temperature is between

300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,

infrared/convection heating in a conveyor type oven.

Throughput times (preheating, soldering and cooling) vary

between 100 and 200 seconds depending on heating

method.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 230 °C.

WAVE SOLDERING

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering

method was specifically developed.

If wave soldering is used the following conditions must be

observed for optimal results:

•Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

•For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

•For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

MANUAL SOLDERING

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

1999 Jan 27 26

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

Suitability of IC packages for wave, reﬂow and dipping soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

MOUNTING PACKAGE SOLDERING METHOD

WAVE REFLOW(1) DIPPING

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable(2) −suitable

Surface mount HLQFP, HSQFP, HSOP, SMS not suitable(3) suitable −

PLCC(4), SO suitable suitable −

LQFP, QFP, TQFP not recommended(4)(5) suitable −

SQFP not suitable suitable −

SSOP, TSSOP, VSO not recommended(6) suitable −

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Jan 27 27

Philips Semiconductors Preliminary speciﬁcation

Fast charge ICs for NiCd and NiMH

batteries TEA1103; TEA1103T;

TEA1103TS

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

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Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

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Tel. +48 22 612 2831, Fax. +48 22 612 2327

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Tel. +7 095 755 6918, Fax. +7 095 755 6919

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Tel. +65 350 2538, Fax. +65 251 6500

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South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 489 4339/4239, Fax. +30 1 481 4240

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Printed in The Netherlands 465002/750/03/pp28 Date of release: 1999 Jan 27 Document order number: 9397 750 04794