9&( ,& 9 $ ,*%7'LH 60;/ 'LHVL]H[PP Doc. No. 5SYA 1618-01 July 03 * /RZORVVWKLQ,*%7GLH * +LJKO\UXJJHG637GHVLJQ * /DUJHIURQWERQGDEOHDUHD 0D[LPXPUDWHGYDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV VCES DC collector current IC Peak collector current ICM Gate-emitter voltage VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj PLQ -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C 1) Maximum rated values indicate limits beyond which damage to the device may occur $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH -40 PD[ 8QLW 1200 V 100 A 200 A 20 V 10 s 150 C 60;/ ,*%7FKDUDFWHULVWLFYDOXHV 3DUDPHWHU 6\PERO &RQGLWLRQV PLQ Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 100 A, VGE = 15 V Tvj = 25 C VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) Gate charge Qge Input capacitance Cies 1.7 1.9 IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 400 4.5 6.5 V 1260 0.42 Internal gate resistance RGint 4 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 8.9 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Cres td(off) A nA Reverse transfer capacitance Turn-off delay time A 200 Coes tr V -200 Output capacitance Rise time 8QLW V 100 Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C 2.3 2.1 Tvj = 25 C ICES PD[ V Tvj = 125 C Collector cut-off current Gate-emitter threshold voltage W\S 0.65 VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 220 Tvj = 125 C 260 Tvj = 25 C 65 Tvj = 125 C 65 VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 560 Tvj = 125 C 630 Tvj = 25 C 40 Tvj = 125 C 60 Tvj = 25 C 10 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load, FWD: 5SLX12H1200 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 12 Tvj = 25 C 6.8 Tvj = 125 C 10.3 mJ tpsc V9GE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 9 560 A $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1618-01 July 03 page 2 of 5 60;/ 0HFKDQLFDOSURSHUWLHV 3DUDPHWHU 8QLW Overall die L W x 12.6 12.6 mm exposed L x W (except gate pad) front metal 11.0 x 11.0 mm 1.2 x 1.2 mm 130 20 m 4 m 1.8 m x Dimensions gate pad LxW thickness Metallization 1) front AISi1 back AI / Ti / Ni / Ag 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQHGUDZLQJ G Emitter 1RWHDOOGLPHQVLRQVDUHVKRZQLQPP 7KLVLVDQHOHFWURVWDWLFVHQVLWLYHGHYLFHSOHDVHREVHUYHWKHLQWHUQDWLRQDOVWDQGDUG,(&&KDS,; $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1618-01 July 03 page 3 of 5 60;/ 200 200 VCE = 20 V 25 C 150 125 C IC [A] IC [A] 150 100 100 125 C 50 50 25 C VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 6 7 8 9 10 11 12 VGE [V] VCE [V] )LJ 5 )LJ Typical onstate characteristics 0.050 Typical transfer characteristics 0.050 VCC = 600 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH 0.045 0.040 VCC = 600 V IC = 100 A VGE = 15 V Tvj = 125 C L = 60 nH 0.045 0.040 0.035 0.035 0.030 0.030 Eon, Eoff [J] Eon, Eoff [J] Eon 0.025 0.020 Eon 0.025 0.020 Eoff 0.015 0.015 Eoff 0.010 0.010 0.005 0.005 0.000 0.000 0 50 100 150 200 0 250 )LJ Typical switching characteristics vs collector current 10 20 30 40 50 60 70 RG [ohm] Ic [A] )LJ Typical switching characteristics vs gate resistor $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1618-01 July 03 page 4 of 5 60;/ 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 Cies 10 C [nF] VGE [V] VCC = 800 V 10 Coes 1 5 Cres IC = 100 A Tvj = 25 C 0 0.1 0.0 )LJ 0.2 0.4 0.6 Qg [C] 0.8 Typical gate charge characteristics 1.0 0 )LJ 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1618-01 July 03