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Doc. No. 5SYA 1618-01 July 03
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Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200 V
DC collector current IC100 A
Peak collector current ICM Limited by Tvjmax 200 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 900 V , V CEM ≤ 1200 V
VGE ≤ 15 V, Tvj ≤ 125 ° C 10 µs
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Doc. No. 5SYA 1618-01 July 03 page 2 of 5
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Collector (-emitter)
break down voltage V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C 1200 V
Tvj = 25 °C 1.7 1.9 2.3 V
Collector-emitter
saturation vo lta ge VCE sat IC = 100 A, VGE = 15 V Tvj = 125 °C2.1 V
Tvj = 25 °C 100 µA
Collecto r cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 400 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C-200 200 nA
Gate-emitter threshold voltage VGE(TO) IC = 4 mA, VCE = VGE, Tvj = 25 °C4.56.5V
Gate charge Qge IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 1260 nC
Input capacitance Cies 8.9
Output capacitance Coes 0.65
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C0.42 nF
Internal gate resistance RGint 4Ω
Tvj = 25 °C 220
Turn-on delay time td(on) Tvj = 125 °C 260 ns
Tvj = 25 °C65
Rise time tr
VCC = 600 V, IC = 100 A,
RG = 10 Ω, VGE = ±15 V,
Lσ = 60 nH,
induct ive loa d Tvj = 125 °C65 ns
Tvj = 25 °C 560
Turn-off delay time td(off) Tvj = 125 °C 630 ns
Tvj = 25 °C40
Fall time tf
VCC = 600 V, IC = 100 A,
RG = 10 Ω, VGE = ±15 V,
Lσ = 60 nH,
induct ive loa d Tvj = 125 °C60 ns
Tvj = 25 °C10
Turn-on switching energy Eon
VCC = 600 V, IC = 100 A,
VGE = ±15 V, R G = 10 Ω,
Lσ = 60 nH,
induct ive loa d,
FWD: 5SLX12H1200 Tvj = 125 °C12
mJ
Tvj = 25 °C6.8
Turn-off switching energy Eoff
VCC = 600 V, IC = 100 A,
VGE = ±15 V, R G = 10 Ω,
Lσ = 60 nH,
induct ive loa d Tvj = 125 °C 10.3 mJ
Short circuit current ISC tpsc  V9GE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM 9 560 A
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Doc. No. 5SYA 1618-01 July 03 page 3 of 5
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Overall die L x W 12.6 x 12.6 mm
exposed
front metal L x W (except gate pad) 11.0 x 11.0 mm
gate pad L x W1.2 x 1.2 mm
Dimensions
thickness 130 ± 20 µm
front AISi1 4 µm
Metalli zat ion 1) back AI / Ti / Ni / Ag 1.8 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA20 33-01 Apr i l 02.
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Doc. No. 5SYA 1618-01 July 03 page 4 of 5
0
50
100
150
200
012345
VCE [V]
I
C
[A]
25 °C
VGE = 15 V
125 °C
0
50
100
150
200
0123456789101112
VGE [V]
I
C
[A]
VCE = 20 V
125 °C
25 °C
)LJ Ty pical onstate characteristics )LJ Ty pical transfer characteristics
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0 50 100 150 200 250
Ic [A]
Eon, Eoff [J]
Eon
Eoff
VCC = 600 V
RG = 10 ohm
VGE = ±15 V
Tvj = 12 5 °C
Lσ = 60 nH
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
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RG [ohm]
Eon, Eoff [J]
Eoff
Eon
VCC = 600 V
IC = 100 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
)LJ Typical switching characteristics vs
collector curren t )LJ Typical switching characteristics vs
gate resistor
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA 1618-01 July 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 141 9
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0
Qg [µC]
V
GE
[V]
VCC = 600 V
VCC = 800 V
IC = 100 A
Tvj = 25 °C
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
)LJ Ty pical gate charge characteristics )LJ Typical capacitances vs
collector-emitter voltage