BLF881; BLF881S UHF power LDMOS transistor Rev. 3 -- 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. Mode of operation f PL PL(PEP) (MHz) (W) (W) PL(AV) Gp (W) D IMD3 (dB) (%) (dBc) IMDshldr (dBc) 2-tone, class AB f1 = 860; f2 = 860.1 - 140 - 21 49 -34 - DVB-T (8k OFDM) 858 - - 33 21 34 - -33[1] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = -34 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = -33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gain BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pin Pinning Description Simplified outline Graphic symbol BLF881 (SOT467C) 1 drain 2 gate 3 source 1 [1] 2 3 sym112 BLF881S (SOT467B) 1 drain 2 gate 3 source [1] 3 2 [1] 1 1 2 3 sym112 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF881_BLF881S Product data sheet Version BLF881 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C BLF881S - earless LDMOST ceramic package; 2 leads All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 SOT467B (c) NXP B.V. 2010. All rights reserved. 2 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 104 V VGS gate-source voltage -0.5 +13 V Tstg storage temperature -65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Rth(j-c) [1] Parameter Conditions thermal resistance from junction to case Tcase = 80 C; PL(AV) = 70 W [1] Typ Unit 0.95 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.35 mA [1] 104 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 135 mA [1] 1.4 - 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGSth + 3.75 V; VDS = 10 V 19 21 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA - 210 - m [1] RDS(on) drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 4.5 A Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 100 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 33.5 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 1 - pF Min Typ Max Unit [1] ID is the drain current. Table 7. RF characteristics Th = 25 C unless otherwise specified. Symbol Parameter Conditions 2-Tone, class AB VDS drain-source voltage - 50 - V IDq quiescent drain current - 0.5 - A PL(PEP) peak envelope power load power - 140 - W Gp power gain 20 21 - dB D drain efficiency 45 49 - % IMD3 third-order intermodulation distortion - -34 -30 dBc BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 3 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor Table 7. RF characteristics ...continued Th = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 50 - V DVB-T (8k OFDM) VDS drain-source voltage IDq quiescent drain current - 0.5 - A PL(AV) average output power - 33 - W Gp power gain 20 21 - dB D drain efficiency - % IMDshldr intermodulation distortion shoulder [1] PAR peak-to-average ratio [2] 30 34 - -33 -30 dBc - 8.3 - dB [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 001aal074 200 Coss (pF) 160 120 80 40 0 0 20 40 60 80 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. BLF881_BLF881S Product data sheet Output capacitance as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 4 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 001aal075 23 Gp (dB) 22 Gp 70 D (%) 60 50 21 20 40 D 19 30 18 20 17 10 0 160 200 PL (W) 16 0 40 80 120 VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 2. CW power gain and drain efficiency as function of load power; typical values 7.1.2 2-Tone 0001aal076 23 Gp (dB) 22 Gp 70 D (%) 60 21 50 20 40 D 19 30 18 20 17 10 001aal077 0 IMD3 (dBc) -20 -40 16 0 40 80 0 120 160 PL(AV) (W) -60 VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 3. 2-Tone power gain and drain efficiency as function of average load power; typical values BLF881_BLF881S Product data sheet 0 40 80 120 160 PL(AV) (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 5 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 7.1.3 DVB-T 001aal078 23 Gp (dB) 22 Gp 70 D (%) 60 001aal079 0 IMDshldr (dBc) -10 21 50 20 40 -20 D 19 30 18 20 17 10 -30 -40 (1) (2) 16 0 0 30 60 90 -50 0 30 PL(AV) (W) 60 90 PL(AV) (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. (1) Lower adjacent channel (2) Upper adjacent channel Fig 5. DVB-T power gain and drain efficiency as function of average load power; typical values BLF881_BLF881S Product data sheet Fig 6. DVB-T shoulder distance as a function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 6 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 DVB-T 001aal080 9.0 D (%) PAR (dB) PAR 8.0 001aal081 25 50 -10 23 40 21 D 7.0 -20 Gp 19 IMDshdr 30 500 600 700 15 400 20 800 900 f (MHz) DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values 500 600 700 -50 800 900 f (MHz) VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. Fig 7. -30 -40 17 6.0 400 0 IMDshdr (dBc) Gp (dB) Fig 8. DVB-T power gain and shoulder distance as function of frequency; typical values 7.3 Ruggedness in class-AB operation The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 7 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 7.4 Reliability 001aal082 106 Years 105 (1) (2) (7) (8) (3) (4) (5) (6) 104 103 102 10 (9) (10) (11) 1 0 2 4 6 IDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) x 1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 9. BLF881_BLF881S Product data sheet BLF881 electromigration All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 8 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 8. Test information Table 8. List of components For test circuit, see Figure 10, Figure 11 and Figure 12. Component Description Value Remarks C1, C2 multilayer ceramic chip capacitor 5.1 pF [1] C3, C4 multilayer ceramic chip capacitor 10 pF [2] C5 multilayer ceramic chip capacitor 6.8 pF [1] C6 multilayer ceramic chip capacitor 4.7 pF [1] C7 multilayer ceramic chip capacitor 2.7 pF [1] C8, C9, C10, C25, multilayer ceramic chip capacitor C26 100 pF [1] C11, C27 multilayer ceramic chip capacitor 10 F C12 electrolytic capacitor 470 F; 63 V C20 multilayer ceramic chip capacitor 10 pF [3] C21 multilayer ceramic chip capacitor 8.2 pF [3] C22 trimmer 0.6 pF to 4.5 pF TDK C570X7R1H106KT000N or capacitor of same quality. Tekelec C23 multilayer ceramic chip capacitor 6.8 pF [3] C24 multilayer ceramic chip capacitor 3.9 pF [3] L1 stripline - [4] (W x L) 7 mm x 15 mm - [4] (W x L) 2.4 mm x 9 mm (W x L) 2.4 mm x 10 mm L2 stripline L3 stripline - [4] L4 stripline - [4] (W x L) 2.4 mm x 25 mm - [4] (W x L) 2.4 mm x 10 mm - [4] (W x L) 2.0 mm x 20 mm (W x L) 2.0 mm x 21 mm L5 stripline L6 stripline L7 stripline - [4] L20 stripline - [4] (W x L) 7 mm x 12 mm - [4] (W x L) 2.4 mm x 13 mm - [4] (W x L) 2.4 mm x 31 mm [4] (W x L) 2.4 mm x 5 mm L21 stripline L22 stripline L23 stripline - R1 resistor 100 R2 resistor 10 k [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 9 of 18 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF881_BLF881S Product data sheet VGG R2 C11 C12 C27 VDD Rev. 3 -- 7 December 2010 C9 R1 L6 C1 C20 50 C25 C3 L23 C8 L22 C24 L21 C23 C22 L20 L1 C21 C2 L2 C4 L3 C5 L4 C6 50 L5 C7 L7 C10 001aaj288 Fig 10. Class-AB common-source broadband amplifier UHF power LDMOS transistor 10 of 18 (c) NXP B.V. 2010. All rights reserved. See Table 8 for a list of components. BLF881; BLF881S All information provided in this document is subject to legal disclaimers. C26 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 76.2 mm 40 mm 40 mm 001aaj289 Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 11 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor R2 C11 C9 C12 C27 L6 C26 R1 C3 C1 C20 C25 L23 C22 L21 L20 L1 L2 C21 C24 C5 C2 C4 C23 C8 L3 L5 L7 C6 L23 C7 C10 L4 001aaj290 See Table 8 for a list of components. Fig 12. Component layout for class-AB common source amplifier BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 12 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 SOT467C Fig 13. Package outline SOT467C BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 13 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor Earless LDMOST ceramic package; 2 leads SOT467B D A F 3 D1 D U1 c 1 L E1 U2 H E 2 b w2 0 5 mm Q 10 mm scale Dimensions Unit(1) A A b max 4.67 5.59 nom min 3.94 5.33 c D D1 E E1 Q U1 U2 0.15 9.25 9.27 5.92 5.97 1.65 18.29 2.92 F H L 2.21 9.78 5.97 0.10 9.04 9.02 5.77 5.72 1.40 17.27 2.16 1.96 9.53 5.72 w2 0.25 max 0.184 0.22 0.006 0.364 0.365 0.233 0.235 0.065 0.72 0.115 0.087 0.385 0.235 0.01 inches nom min 0.155 0.21 0.004 0.356 0.355 0.227 0.225 0.055 0.68 0.085 0.077 0.375 0.225 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot467b_po European projection Issue date 08-12-09 09-10-27 SOT467B Fig 14. Package outline SOT467B BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 14 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description CW Continuous Wave CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial ESD ElectroStatic Discharge HF High Frequency IMD3 Third order InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAR Peak-to-Average power Ratio PEP Peak Envelope Power RF Radio Frequency TTF Time To Failure UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF881_BLF881S v.3 20101207 Product data sheet - BLF881_BLF881S v.2 Modifications: * Table 6 on page 3: In the conditions column of VGS(th) the value of ID has been changed BLF881_BLF881S v.2 20100210 Product data sheet - BLF881_BLF881S v.1 BLF881_BLF881S v.1 20091210 Preliminary data sheet - - BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 15 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 16 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 12.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 12.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 7 December 2010 (c) NXP B.V. 2010. All rights reserved. 17 of 18 BLF881; BLF881S NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 5 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures . . . . . . . . . . . . . . . . . . . 7 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Ruggedness in class-AB operation . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 December 2010 Document identifier: BLF881_BLF881S