HSE D MM 6115950 0000555 283 MPTC MICROSEMI CORP/POWER 7-22-12 TSA71555 Power Transistor Chip, NPN 15 A, 550 V, t,= 0.1 ps TECHNOLOGY @ Planar Epitaxial @ Contact Metallization: Base and Emitter-Aluminum Collector(Au or Ti/Ni/Ag)} 175 ml @ Chip Thickness: 22 mils Mf Applications: Switching regulatiors * Deflection circuits Motor controls 175 mil PWM inverters *BBASE BONDING AREA: 60X 19 mils "BY EMITTER BONDING AREA: 65x 20 mils Electrical Characteristics At 25C The chip is 100% probed to the conditions and limits specified. TEST CONDITIONS LIMITS UNITS CHARACTERISTIC VOLTAGE | CURRENT Vde mAdc Va [Ves | Ie | Ip | MIN. | MAX. Collector-base breakdown voltage 0.1 550 VOLTS Collector-emitter breakdown voltage 1.0 0 260 VOLTS Iso Emitter cut-off current i 0 1.0 mA DC current gain 4.0 1000 40 90 | on Venocus)** Collector-emitter sustaining voltage 100 275 VOLTS *Pulsed: pulse duration = 300 ps, duty factor < 2%. **Performed on assembled device evaluation samples only. This voltage MUST NOT be measured on a curve tracer. Addits bled device eval Jabte to MICROSEMI CORPORATION Power Technology Components Division 23201 SOUTH NORMANDIE AVENUE TORRANCE, CALIFORNIA 90501 (213) 594-3737 FAX (213)530-5609 8190 c