A D V A N C E D S E M I C O N D U C T O R, I N C REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
VF IF = 10 mA 550 mV
IR VR = 1.0 V 1.0 µA
VBR IR = 100 µA 5.0
V
CT0 VR = 0 V f = 1.0 MHz 1.0 pF
NF f = 890 MHz 10 dB
QS IF = 10 mA 1.6 pC
SILICON DIODE
FH1100
DESCRIPTION:
The ASI FH1100 is a Silicon Diffused
Hot Carrier Diode.
FEATURES INCLUDE:
• QS = 1.6 pC Typ.
• C = 1.0 pF Max. @ f = 890 MHz
• Hermetic Glass Package
MAXIMUM RATINGS
IF 10 mA
VR 5.0 V
PDISS 100 mW @ T C = 25 °C
TJ -65 °C to +125 °C
TSTG -65 °C to +150 °C
Tsoldering +260 °C for 5 Seconds
PACKAGE STYLE DO-7
