R3111x SERIES
LOW VOLTAGE DETECTOR
NO.EA-056-091102
1
OUTLINE
The R3111x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low
supply current, which can be operated at an extremely low voltage and is used for system reset as an example.
Each of these ICs consists of a voltage reference unit, a comparator, resistors for detector threshold setting,
an output driver and a hysteresis circuit. The detector threshold is fixed with high accuracy internally and does
not require any adjustment.
Three output types, Nch open drain “L” type, Nch open drain “H” type and CMO S type are available.
The R3111x Series are operable at a lower voltage than that for the Rx5VL series, and can be driven by a
single battery.
Seven types of packages, TO-92, SOT-89, SOT-23-3, SOT-23-5, SC-82AB, SC-88A and SON1612-6 are
available.
FEATURES
• Supply Current......................................................................Typ. 0.8μA (-VDET=1.5V, VDD=-VDET−0.1V)
• Operating Voltage Range......................................................0.7V to 10.0V (Topt=25°C)
• Detector Threshold Range....................................................0.9V to 6.0V
• Detector Threshold Accuracy................................................±2.0%
• Temperature-Drift Coefficient of Detector Threshold............Ty p. ±100ppm/°C
• Output Types.........................................................................Nch Open Drain “L”, Nch Open Drain “H”, and
CMOS
• Packages ..............................................................................TO-92, SOT-89, SOT-23-3, SOT-23-5,
SC-82AB, SC-88A, SON1612-6
APPLICATIONS
• CPU and Logic Circuit Reset
• Battery Checker
• Window Comparator
• Wave Shaping Circuit
• Battery Back-up Circuit
• Power Failure Detector
R3111x
2
BLOCK DIAGRAMS
R3111xxxxA R3111xxxxB
OUT
VDD
Vref
GND
OUT
VDD
Vref
GND
R3111xxxxC
OUT
VDD
GND
Vref
R3111x
3
SELECTION GUIDE
The package type, the detector threshold, the output type and the taping type for the ICs can be selected at
the users’ request. The selection can be made with designating the part number as shown b elow;
R3111xxxxx-xx -x ← Part Number
↑ ↑ ↑ ↑ ↑ ↑
a b c d e f
Code Contents
a
Designation of Packa ge Type;
R3111Dxx1x: SON1612-6
R3111Exx1x: TO-92
R3111Hxx1x: SOT-89
R3111Nxx1x: SOT-23-5
R3111Nxx2x: SOT-23-3
R3111Qxx1x: SC-82AB
R3111Qxx2x: SC-88A
b Setting Detector Threshold (-VDET);
Stepwise setting with a step of 0.1V in the range of 0.9V to 6.0V is possible.
c Designation of Packa ge Type
1: except SOT-23-3, SC-88A
2: SOT-23-3, SC-88A
d
Designation of Output Type;
A: Nch Open Drain (Output "L" at VDD=-VDET)
B: Nch Open Drain (Output "H" at VDD=-VDET)
C: CMOS (Output "L" at VDD=-VDET)
e
Designation of Packing or Taping Type ;
Ex.TO-92: TZ, SOT-89: T1, SOT-23-3, SOT-23-5, SC-82AB, SC-88A, SON1612-6: TR
prescribed as standard directions.
(Refer to Taping Specifications.) Anti static bag for TO-92: C
f Designation of Composition of pin plating
-F: Lead free solder plating
(TO-92, SOT-89, SOT-23-3, SOT-23-5, SC-82AB, SC-88A, SON1612-6)
R3111x
4
PIN CONFIGURATIONS
z TO-92 z SOT-89 z SOT-23-3 z SOT-23-5
3
12
(mark side)
3
12
(mark side)
12
3
(mark side)
123
4
5
(mark side)
z SC-82AB z SC-88A z SON1612-6
4 3
12
(mark side)
5 4
13
2
(mark side)
123
654
(mar k side)
PIN DESCRIPTIONS
z TO-92 z SOT-89 z SOT-23-3 z SOT-23-5
Pin No. Symbol Pin No. Symbol Pin No. Symbol Pin No. Symbol
1 VDD 1 OUT 1 OUT 1 OUT
2 GND
2 VDD 2 GND 2 VDD
3 OUT
3 GND 3 VDD 3 GND
4 NC
5 NC
z SC-82AB z SC-88A z SON1612-6
Pin No. Symbol Pin No. Symbol Pin No. Symbol
1 OUT 1 OUT 1 OUT
2 VDD 2 NC 2 VDD
3 NC 3 VDD 3 GND
4 GND 4 NC 4 NC
5 GND 5 VDD
6 NC
R3111x
5
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VDD Supply Voltage 12 V
VOUT1 Output Voltage (CMOS) VSS−0.3 to VDD+0.3 V
VOUT2 Output Voltage (Nch) VSS−0.3 to 12 V
IOUT Output Current 70 mA
Power Dissipation (TO-92)* 300
Power Dissipation (SOT-89)* 900
Power Dissipation (SOT-23-3)* 420
Power Dissipation (SOT-23-5)* 420
Power Dissip ation (SC-82AB)* 380
Power Dissip ation (SC-88A)* 380
PD
Power Dissipation (SON1612-6)* 500
mW
Topt Operating Temperature Range −40 to 85 °C
Tstg Storage Temperature Range −55 to 125 °C
Tsolder Lead temperature (Solderi ng) 260°C, 10s
* ) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system u sing the device
in the field. The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment sho uld b e designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or su rge. And the semicondu ctor devices may receive seriou s damage when they continu e
to operate over the recommended operating conditions.
R3111x
6
ELECTRICAL CHARACTERISTICS
• R3111x09xA/C Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 0.882 0.900 0.918 V
VHYS Detector Threshold Hysteresis 0.027 0.045 0.063 V
ISS Supply Current VDD=0.80V
VDD=2.90V 0.8
0.9 2.4
2.7 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
Nch
VDS=0.05V,VDD=0.70V
VDS=0.50V,VDD=0.85V
0.01
0.05
0.05
0.50
mA
IOUT Output Current (Driver Output Pin) Pch
VDS=−2.1V,VDD=4.5V
1.0
2.0 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
• R3111x18xA/C Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 1.764 1.800 1.836 V
VHYS Detector Threshold Hysteresis 0.054 0.090 0.126 V
ISS Supply Current VDD=1.70V
VDD=3.80V 0.8
1.0 2.4
3.0 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
Nch
VDS=0.05V, VDD=0.70V
VDS=0.50V, VDD=1.50V
0.01
1.00
0.05
2.00
mA
IOUT Output Current (Driver Output Pin) Pch
VDS=−2.1V,VDD=4.5V
1.0
2.0 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
∗Note1:
Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k
Ω
to 5.0V.)
∗Note2: In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to ( +VDET)+2.0V and output
voltage level becoming to 2.5V.
R3111x
7
• R3111x27xA/C Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 2.646 2.700 2.754 V
VHYS Detector Threshold Hysteresis 0.081 0.135 0.189 V
ISS Supply Current VDD=2.60V
VDD=4.70V 0.9
1.1 2.7
3.3 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
Nch
VDS=0.05V,VDD=0.70V
VDS=0.50V,VDD=1.50V
0.01
1.00
0.05
2.00 mA
IOUT Output Current (Driver Output Pin) Pch
VDS=−2.1V,VDD=4.5V
1.0
2.0 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
• R3111x36xA/C Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 3.528 3.600 3.672 V
VHYS Detector Threshold Hysteresis 0.108 0.180 0.252 V
ISS Supply Current VDD= 3.47V
VDD= 5.60V 1.0
1.2 3.0
3.6 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
Nch
VDS=0.05V,VDD=0.70V
VDS=0.50V,VDD=1.50V
0.01
1.00
0.05
2.00
mA
IOUT Output Current (Driver Output Pin) Pch
VDS=−2.1V,VDD=4.5V
1.0
2.0 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
∗Note1:
Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k
Ω
to 5.0V.)
∗Note2: In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to ( +VDET)+2.0V and output
voltage level becoming to 2.5V.
R3111x
8
• R3111x45xA/C Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 4.410 4.500 4.590 V
VHYS Detector Threshold Hysteresis 0.135 0.225 0.315 V
ISS Supply Current VDD=4.34V
VDD=6.50V 1.1
1.3 3.3
3.9 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
Nch
VDS=0.05V, VDD=0.70V
VDS=0.50V, VDD=1.50V
0.01
1.00
0.05
2.00 mA
IOUT Output Current (Driver Output Pin) Pch
VDS=−2.1V,VDD=8.0V
1.5
3.0 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
• R3111x54xA/C Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 5.292 5.400 5.508 V
VHYS Detector Threshold Hysteresis 0.162 0.270 0.378 V
ISS Supply Current VDD=5.20V
VDD=7.40V
1.2
1.4 3.6
4.2 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
Nch
VDS=0.05V, VDD=0.70V
VDS=0.50V, VDD=1.50V
0.01
1.00
0.05
2.00 mA
IOUT Output Current
(Driver Output Pin) Pch
VDS=−2.1V, VDD=8.0V
1.5
3.0 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
∗Note1:
Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k
Ω
to 5.0V.)
∗Note2: In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to ( +VDET)+2.0V and output
voltage level becoming to 2.5V.
R3111x
9
• R3111Q231B Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 2.254 2.300 2.346 V
VHYS Detector Threshold Hysteresis 0.069 0.115 0.161 V
ISS Supply Current VDD=2.2V
VDD=4.3V 0.9
1.1 2.7
3.3 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
IOUT Output Current (Driver Output Pin) Nch
VDS=0.10V,VDD=6.5V 2.5 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
• R3111Q441B Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
-VDET Detector Threshold 4.312 4.400 4.488 V
VHYS Detector Threshold Hysteresis 0.132 0.220 0.308 V
ISS Supply Current VDD=4.24V
VDD=6.4V
1.1
1.3 3.3
3.9 μA
VDDH Maximum Operating Voltage 10 V
Topt=25°C 0.55 0.70
VDDL Minimum Operating Voltage∗Note1 −40°C
<
=
Topt
<
=
85°C 0.65 0.80 V
IOUT Output Current
(Driver Output Pin) Nch
VDS=0.10V, VDD=6.5V 2.5 mA
tPLH Output Delay Time∗Note2 100
μs
Δ-VDET/
ΔTopt Detector Threshold Temperature
Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
∗Note1:
Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k
Ω
to 5.0V.)
∗Note2: In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to ( +VDET)+2.0V and output
voltage level becoming to 2.5V.
R3111x
10
TIMING CHART
Detector Threshold
t
PLH
t
PLH
t
PLH
GND
GND
VDDL
-VDET
+VDET
D etec tor Threshold
Released Volt age
M inimum Operating Volt age
Pull-up Volt age
Supply
Voltage
(VDD)
Output
Voltage
(VOUT)
R3111xxxxA R3111xxxxB R3111xxxxC
Detector Thr es hold Detector Thr eshol d
Hysteresis Hysteresis Hysteresis
DEFINITION OF OUTPUT DELAY TIME
Output Delay Time (tPLH) is defined as follows:
1. In the case of Nch Open Drain Output:(R3111xxxxA/B)
Under the condition of the output pin (OUT) is pulled up through a resistor of 470kΩ to 5V, the time interval
between the rising edge of VDD pulse from 0.7V to (+VDET)+2.0V and becoming of the output voltage to 2.5V.
2. In the case of CMOS Output:(R3111xxxxC)
The time interval between the rising edge of VDD pulse from 0.7V to (+VDET)+2.0V and becoming of the output
voltage to ((+VDET)+2.0V)/2.
+VDET+2.0V
0.7V
Supply
Voltage
(VDD) GND
5.0V
2.5V
GND
Output
Voltage
(VOUT)
tPLH tPHL
+VDET
+
2.0V
0.7V
GND
5.0V
2.5V
GND
tPLH
tPHL
Supply
Voltage
(VDD)
Output
Voltage
(VOUT)
+
VDET+2.0V
0.7V
GND
GND
tPLH
tPHL
+
VDET+2.0V
+
VDET+2.0V
2
Supply
Voltage
(VDD)
Output
Voltage
(VOUT)
Nch Open Drain Output Nch Op en Drain Output CMOS Output
(R3111xxxxA) (R3111xxxxB) (R3111xxxxC)
R3111x
11
R3111x
12
ELECTRICAL CHARACTERISTICS BY DETECTOR THRESHOLD
• R3111x09x to R3111x60x
Detector Threshold Detector Threshold
Hysteresis Supply Current 1 Supply Current 2
-VDET[V] V
HYS[V] ISS1[μA] I
SS2[μA]
Part
Number Min. Typ. Max. Min. Typ. Max. Condition Typ. Max. Condition Typ. Max.
R3111x09xx 0.882 0.900 0.918 0.027 0.045 0.063 0.9 2.7
R3111x10xx 0.980 1.000 1.020 0.030 0.050 0.070
R3111x11xx 1.078 1.100 1.122 0.033 0.055 0.077
R3111x12xx 1.176 1.200 1.224 0.036 0.060 0.084
R3111x13xx 1.274 1.300 1.326 0.039 0.065 0.091
R3111x14xx 1.372 1.400 1.428 0.042 0.070 0.098
R3111x15xx 1.470 1.500 1.530 0.045 0.075 0.105
R3111x16xx 1.568 1.600 1.632 0.048 0.080 0.112
R3111x17xx 1.666 1.700 1.734 0.051 0.085 0.119
R3111x18xx 1.764 1.800 1.836 0.054 0.090 0.126
R3111x19xx 1.862 1.900 1.938 0.057 0.095 0.133
0.8 2.4 1.0 3.0
R3111x20xx 1.960 2.000 2.040 0.060 0.100 0.140
R3111x21xx 2.058 2.100 2.142 0.063 0.105 0.147
R3111x22xx 2.156 2.200 2.244 0.066 0.110 0.154
R3111x23xx 2.254 2.300 2.346 0.069 0.115 0.161
R3111x24xx 2.352 2.400 2.448 0.072 0.120 0.168
R3111x25xx 2.450 2.500 2.550 0.075 0.125 0.175
R3111x26xx 2.548 2.600 2.652 0.078 0.130 0.182
R3111x27xx 2.646 2.700 2.754 0.081 0.135 0.189
R3111x28xx 2.744 2.800 2.856 0.084 0.140 0.196
R3111x29xx 2.842 2.900 2.958 0.087 0.145 0.203
VDD=
(-VDET)
−0.10V
0.9 2.7 1.1 3.3
R3111x30xx 2.940 3.000 3.060 0.090 0.150 0.210
R3111x31xx 3.038 3.100 3.162 0.093 0.155 0.217
R3111x32xx 3.136 3.200 3.264 0.096 0.160 0.224
R3111x33xx 3.234 3.300 3.366 0.099 0.165 0.231
R3111x34xx 3.332 3.400 3.468 0.102 0.170 0.238
R3111x35xx 3.430 3.500 3.570 0.105 0.175 0.245
R3111x36xx 3.528 3.600 3.672 0.108 0.180 0.252
R3111x37xx 3.626 3.700 3.774 0.111 0.185 0.259
R3111x38xx 3.724 3.800 3.876 0.114 0.190 0.266
R3111x39xx 3.822 3.900 3.978 0.117 0.195 0.273
VDD=
(-VDET)
−0.13V 1.0 3.0 1.2 3.6
R3111x40xx 3.920 4.000 4.080 0.120 0.200 0.280
R3111x41xx 4.018 4.100 4.182 0.123 0.205 0.287
R3111x42xx 4.116 4.200 4.284 0.126 0.210 0.294
R3111x43xx 4.214 4.300 4.386 0.129 0.215 0.301
R3111x44xx 4.312 4.400 4.488 0.132 0.220 0.308
R3111x45xx 4.410 4.500 4.590 0.135 0.225 0.315
R3111x46xx 4.508 4.600 4.692 0.138 0.230 0.322
R3111x47xx 4.606 4.700 4.794 0.141 0.235 0.329
R3111x48xx 4.704 4.800 4.896 0.144 0.240 0.336
R3111x49xx 4.802 4.900 4.998 0.147 0.245 0.343
VDD=
(-VDET)
−0.16V 1.1 3.3 1.3 3.9
R3111x50xx 4.900 5.000 5.100 0.150 0.250 0.350
R3111x51xx 4.998 5.100 5.202 0.153 0.255 0.357
R3111x52xx 5.096 5.200 5.304 0.156 0.260 0.364
R3111x53xx 5.194 5.300 5.406 0.159 0.265 0.371
R3111x54xx 5.292 5.400 5.508 0.162 0.270 0.378
R3111x55xx 5.390 5.500 5.610 0.165 0.275 0.385
R3111x56xx 5.488 5.600 5.712 0.168 0.280 0.392
R3111x57xx 5.586 5.700 5.814 0.171 0.285 0.399
R3111x58xx 5.684 5.800 5.916 0.174 0.290 0.406
R3111x59xx 5.782 5.900 6.018 0.177 0.295 0.413
R3111x60xx 5.880 6.000 6.120 0.180 0.300 0.420
VDD=
(-VDET)
−0.20V 1.2 3.6
VDD=
(-VDET)
+2.0V
1.4 4.2
*1)
In the case of CMOS output type; when the voltage is forced to V
DD
from 0.7V to (
+
V
DET
)
+
2.0V, time interval between the rising edge of V
DD
and the rea ching point at
((
+
V
DET
)
+
2.0V)/2. In the case of Nch open drain output type : The output pin is pulled up to 5V through 470k
Ω
, and when the voltage is forced to V
DD
from 0.7V to
(
+
V
DET
)
+
2.0V, time interval between the rising edge of VDD and the reaching point at ((
+
V
DET
)
+
2.0V)/2.
*2) VDD value when Output Voltage is equal or less than 0.1V. In the case of Nch open drain output type, the output pin is pulled up to 5V through 470kΩ
resistor.
Condition 1: Topt=25°C
Condition 2: −40°C
<
=
Topt
<
=
85°C
R3111x
13
Output Current 1 Output Current 2 *3 Output Delay
Time
Minimum
Operating Voltage Detector Threshold
Temperature Coefficient
IOUT1[mA] I
OUT2[mA] tPLH[μs] VDDL[V] Δ-VDET/ΔTopt[ppm/°C]
Condition Min. Typ. Condition Min. Typ. Max. Typ. Max. Condition Typ.
VDD=
0.85V 0.05 0.5
VDD=
1.0V 0.2 1.0
<A/C version>
Nch
VDS=0.05V
VDD=0.7V
<B version>
Nch
VDS=0.10V
VDD=6.5V
0.01
2.5
0.05
-
Nch
VDS=
0.5V
VDD=
1.5V
1.0
2.0 100 *1
*2
Condition 1
0.55
Condition 2
0.65
*2
Condition 1
0.70
Condition 2
0.80
−40°C
<
=
Topt
<
=
85°C ±100
*3) Only A/C versions.
R3111x
14
OPERATION
• Operation of R3111xxxxA
Vref
Ra
Rb
Rc
VDD
OUT
GND
Tr .1 Nch
Com
p
arato
r
OUT pin should be pulled-up to
VDD or an external voltage level.
Block Diagram (R311 1 xxx xA)
13 5
A
B
tPLH
2 4
GND
GND
VDDL
-
VDET
+VDET
Detector Threshold
Released Voltage
Minimum Operat i ng Voltage
Pull-up Voltage
Detector Threshold
Hysteresis
Supply Voltage
(VDD)
Output Voltage
(VOUT)
Step 1 2 3 4 5
Comparator (+)
Pin Input Voltage I II II II I
Comparator Output H L Indefinite L H
Tr.1 OFF ON Indefinite ON OFF
Output Tr . Nch OFF ON Indefinite ON OFF
I×VDD
Rb+Rc
Ra+Rb+Rc
II ×VDD
Rb
Ra+Rb
Operation Diagram
• Explanation of operation
Step 1. The output voltage is equal to the pull-up voltage.
Step 2. At Point “A”, Vref
>
=
VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
from "H" to "L", therefore the output voltage becomes the GND level. The voltage level of Point A means
a detector threshold volt age (−VDET).
Step 3. When the supply voltage is lower than the minimum operating voltage, the operation of the output
transistor becomes indefini t e. The output voltage is equal to the pull-up voltage.
Step 4. The output Voltage is equal to the GND level.
Step 5. At Point “B”, Vref
<
=
VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "L" to
"H", then the output voltage is equal to the pull-up vo ltage. The volt age level of Point B means a release d
voltage (+VDET).
∗) The diff erence between a released volt age and a d etector thresh old voltage i s a detector threshold hysteresi s.
Output
Delay T ime
R3111x
15
• Operation of R3111xxxxB
Vref
Ra
Rb
Rc
VDD
OUT
GND
Tr .1 Nch
Com
p
arato
r
OUT pin should be pulled-up to
VDD or an external voltage level.
Block Diagram (R311 1 xxx xB)
tPLH
GND
GND
VDDL
-
VDET
+VDET
Detector Threshold
Released Voltage
Minimum Operating Voltage
Pull-up Voltage
1 2 3
A
B
Detector Threshold
Hysteresis
Supply Voltage
(VDD)
Output Voltage
(VOUT)
Step 1 2 3
Comparator (−)
Pin Input Voltage I II I
Comparator Output L H L
Tr.1 OFF ON OFF
Output Tr. Nch ON OFF ON
I×VDD
Rb+Rc
Ra+Rb+Rc
II ×VDD
Rb
Ra+Rb
Operation Diagram
• Explanation of operation
Step 1. The output voltage is equal to the GND level.
Step 2. At Point “A”, Vref
>
=
VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
from "L" to "H", therefore the output voltage becomes the pull-up voltage. The voltage level of Point A
means a detector threshold voltage (−VDET).
Step 3. At Point “B”, Vref
<
=
VDD×Rb/(Ra+Rb) is true, as a re sult, the output of comparator is reversed from "H" to
"L", then the output voltage is equal to the GND level. The voltage level of Point B means a released
voltage (+VDET).
∗) The diff erence between a released volt age and a d etector thresh old voltage i s a detector threshold hysteresi s.
Output
Delay T ime
R3111x
16
• Operation of R3111xxxxC
Vref
Ra
Rb
Rc
VDD
OUT
GND
Tr.1 Nch
Pch
Com
p
arato
r
Block Diagram (R311 1 xxx xC)
tPLH
GND
GND
VDDL
-
VDET
+VDET
Detector Threshold
Released Voltage
Minimum Operating Voltage
12 3 45
A
B
Detector Threshold
Hysteresis
Supply Voltage
(VDD)
Output Voltage
(VOUT)
Step 1 2 3 4 5
Comparator (+)
Pin Input Voltage I II II II I
Comparator Output H L Indefinite L H
Tr.1 OFF ON Indefinite ON OFF
Pch ON OFF Indefinite OFF ON
Output Tr. Nch OFF ON Indefinite ON OFF
I×VDD
Rb+Rc
Ra+Rb+Rc
II ×VDD
Rb
Ra+Rb
Operation Diagram
• Explanation of operation
Step 1. The output voltage is equal to the supply voltage (VDD).
Step 2. At Point “A”, Vref
>
=
VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
from "H" to "L", therefore the output voltage becomes the GND level. The voltage level of Point A
means a detector threshold voltage (−VDET).
Step 3. When the supply voltage is lower than the minimum operating voltage, the operation of the output
transistor becomes indefini te.
Step 4. The output Voltage is equal to the GND level.
Step 5. At Point “B”, Vref
<
=
VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "L" to
"H", then the output voltage is equal to the supply voltage (VDD). The voltage level of Point B means a
released voltage (+VDET).
∗) The diff erence between a released volt age and a d etector thresh old voltage i s a detector threshold hysteresi s.
Output
Delay T ime
R3111x
17
TEST CIRCUITS
GND
VDD
VIN
ISS
R3111x
Series OUT
GND
VDD
VIN R3111x
Series OUT
470kΩ
5V
VOUT
Supply Current Test Circuit Detector Threshold Test Circuit
(Pull-up circuit is not neces sary for
CMOS Output type.)
GND
VDD
VIN R3111x
Series OUT VDS
IOUT
GND
VDD
VIN R3111x
Series OUT VDD
−
VDS
IOUT
VDS
Nch Driver Output Curr ent Test Circuit Pch Driver Output Current Test Circuit
∗Apply to CMOS Output type only
GND
VDD
R3111x
Series OUT
VDS
VOUT
5V
ROUT
470kΩ
P.G.
+VDET+2.0V
0.7V
GND
COUT
GND
VDD R3111x
Series OUT
VDS
VOUT
5V
ROUT
470kΩ
P.G.
+VDET+2.0V
0.7V
GND
RIN
470kΩ
CIN
Output Delay Time Test Circuit (1) Output Delay Time Test Circuit (2)
(Pull-up circuit is not necessary for
CMOS Output type.)
R3111x
18
TYPICAL CHARACTERISTICS
1) Supply Current vs. Input Voltage
R3111x09xC R3111x27xC
Topt=85°C
25°C
-40°C
2.5
2.0
1.5
1.0
0.5
0.0
Input Voltage V
IN
(V)
0246810
Supply Current I
SS
(μA)
Topt=85°C
25°C
-40°C
2.0
1.5
1.0
0.5
0.0
Input Voltage V
IN
(V)
0246810
Supply Current I
SS
(μA)
R3111x45xC
Topt=85°C
25°C
-40°C
2.0
1.5
1.0
0.5
0.0
Input Voltage V
IN
(V)
0246810
Supply Current I
SS
(μA)
2) Detector Threshold Hysteresis vs. Temperature
R3111x09xC R3111x27xC
+VDET
-VDET
1.00
0.98
0.96
0.94
0.92
0.90
0.88
0.84
0.86
Temperature Topt(°C)
-60 0 20406080-40 -20 100
Detector Threshold -VDET(V)
2.9
2.8
2.7
2.6
2.5
+VDET
-VDET
Temperature Topt(°C)
-60 0 20406080-40 -20 100
Detector Threshold -VDET(V)
R3111x
19
R3111x45xC
4.8
4.7
4.6
4.5
4.4
+VDET
-VDET
Temperature Topt(°C)
-60 0 20406080-40 -20 100
Detector Threshold -VDET(V)
3) Output Voltage vs. Input Voltage
R3111x09xC R3111x09xA
Topt=-40°C
25°C
85°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.0
0.2
Input Voltage V
IN
(V)
0 0.6 0.8 1 1.2 1.40.2 0.4 1.6
Output Voltage V
OUT
(V)
5V Pull-up 470kΩ
6
5
4
3
2
0
1
Input Voltage VIN(V)
0 0.6 0.8 1 1.2 1.40.2 0.4 1.6
Output Voltage VOUT(V)
Topt=-40°C
25°C
85°C
R3111x27xC R3111x27xA
Topt=-40°C
25°C
85°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.0
0.5
Input Voltage VIN(V)
0 1.5 2 2.5 3 3.50.5 1 4
Output Voltage VOUT(V)
5V Pull-up 470kΩ
6
5
4
3
2
0
1
Input Voltage V
IN
(V)
0 1.5 2 2.5 3 3.50.5 1 4
Output Voltage V
OUT
(V)
Topt=-40°C
25°C
85°C
R3111x
20
R3111x45xC R3111x45xA
Topt=-40°C
25°C
85°C
6
5
4
3
2
0
1
Input Voltage V
IN
(V)
0231654
Output Voltage V
OUT
(V)
5V Pull-up 470kΩ
6
5
4
3
2
0
1
Input Voltage VIN(V)
0231654
Output Voltage VOUT(V)
Topt=-40°C
25°C
85°C
4) Nch Driver Output Current vs. VDS
R3111x09xC R3111x09xC
Topt=25°C
VDD=0.85V
0.7V
700
600
500
400
300
200
0
100
VDS(V)
0 0.2 0.4 0.6 0.8
Output Current IOUT(μA)
VDD=0.8V
0.7V
Topt=25°C
300
250
200
150
100
0
50
VDS(V)
0 0.02 0.04 0.06 0.08 0.1
Output Current IOUT(μA)
R3111x27xC R3111x27xC
Topt=25°C
VDD=2.5V
2.0V
1.5V
20
18
14
16
12
10
8
6
4
0
2
VDS(V)
0 0.5 1 1.5 2 2.5
Output Current IOUT(mA)
VDD=0.8V
0.7V
Topt=25°C
300
250
200
150
100
0
50
VDS(V)
0 0.02 0.04 0.06 0.08 0.1
Output Current IOUT(μA)
R3111x
21
R3111x45xC R3111x45xC
Topt=25°C
VDD=4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
60
50
40
30
20
0
10
VDS(V)
0 0.5 1 1.5 2 2.5 3 43.5 4.5
Output Current IOUT(mA)
VDD=0.8V
0.7V
Topt=25°C
300
250
200
150
100
0
50
VDS(V)
0 0.02 0.04 0.06 0.08 0.1
Output Current IOUT(μA)
5) Nch Driver Output Current vs. Input Voltage
R3111x09xC R3111x27xC
900
800
700
600
500
400
300
200
0
100
Input Voltage VIN(V)
0 0.2 0.4 0.6 10.8
Output Current IOUT(μA)
Topt=-85°C
25°C
-40°C
14
12
10
8
6
4
0
2
Input Voltage VIN(V)
0 0.5 1 1.5 1 2.5 3
Output Current IOUT(mA)
Topt=-40°C25°C
85°C
R3111x45xC
25
20
15
10
5
0
Input Voltage VIN(V)
0123456
Output Current IOUT(mA)
Topt=-40°C
25°C
85°C
R3111x
22
6) Pch Driver Output Current vs. Input Voltage
R3111x09xC R3111x27xC
Topt=25°C
V
DS
=0.7V
0.5V
1.4
1.2
1.0
0.8
0.6
0.4
0.0
0.2
Input Voltage V
IN
(V)
02468
Output Current I
OUT
(mA)
Topt=25°C
VDS=2.1V
1.5V
0.5V
1.0V
3.5
3.0
2.5
2.0
1.5
1.0
0.0
0.5
Input Voltage VIN(V)
012 43657
Output Current IOUT(mA)
R3111x45xC
Topt=25°C
VDS=2.1V
1.5V
0.5V
1.0V
4.5
3.5
4.0
3.0
2.5
2.0
1.5
1.0
0.0
0.5
Input Voltage VIN(V)
024 8610
Output Current IOUT(mA)
7) Output Delay Time vs. Load Capacitance (Topt=25°C)
R3111x09xA R3111x27xA
tPLH
tPHL
100
10
1
0.1
0.01
0.001
Load Capacitance C
OUT
(μF)
0.0001 0.010.001 0.1
Output Delay Time tP(ms)
tPLH
tPHL
100
10
1
0.1
0.01
0.001
Load Capacitance COUT(μF)
0.0001 0.010.001 0.1
Output Delay Time tP(ms)
R3111x
23
R3111x45xA
t
PLH
t
PHL
100
10
1
0.1
0.01
0.001
Load Capacitance COUT(μF)
0.0001 0.010.001 0.1
Output Delay Time tP(ms)
8) Output Delay Time vs. Input Pin Capacitance
R3111x09xA R3111x27xA
t
PHL
t
PLH
100
10
1
0.1
0.01
0.001
Input Pin Capacitance CIN(μF)
0.0001 0.010.001 0.1
Output Delay Time tP(ms)
tPLH
tPHL
100
10
1
0.1
0.01
0.001
Input Pin Capacitance CIN(μF)
0.0001 0.010.001 0.1
Output Delay Time tP(ms)
R3111x45xA
tPLH
tPHL
100
10
1
0.1
0.01
0.001
Input Pin Capacitance CIN(μF)
0.001 0.10.01 1
Output Delay Time tP(ms)
R3111x
24
TYPICAL APPLICATION
• R3111xxxxA CPU Reset Circuit (Nch Open Drain Output)
Case 1. Input Voltage to R3111xxxxA is equal to
Input Voltage to CPU Case 2. Input Voltage to R3111xxxxA is unequal to
Input Voltage to CPU
R3111xxxxA
Series
VDD
GND
OUT
R VDD
RESET
CPU
GND
VDD
470
Ω
R3111xxxxA
Series
VDD
GND
OUT
R VDD
RESET
CPU
GND
VDD2
VDD 470
Ω
• R3111xxxxC CPU Reset Circuit (CMOS Output)
R3111xxxx C
Series
VDD
GND
OUT
VDD
RESET
CPU
GND
VDD
•
R3111xxxxA Output Delay Time Circuit 1
(Nch Open Drain Output)
•
R3111xxxxA Output Delay Time Circuit 2
(Nch Open Drain Output)
R3111xxxxA
Series
VDD
GND
OUT
R VDD
RESET
CPU
GND
VDD
470
Ω
R3111xxxxA
Series
VDD
GND
OUT
R2 VDD
RESET
CPU
GND
VDD
470kΩ
R1
100k
Ω
• Memory Back-up Circuit
R3111x xxxC
Series
GND
VDD
D1 D2
VDD GND
OUT
A
B
C
Y1
Y2
Y3
Y4
VCC VCC
RAM1
GND CS
VCC
RAM2
GND CS
VCC
RAM3
GND CS
VCC
RAM4
GND CS
R3111x
25
• Voltage level Indicator Circuit (lighted when the power runs out)
(Nch Open Drain Output)
R3111xxxxA
Series
VDD
GND
OUT
VDD
• Detector Threshold Adjustable Circuit
(Nch Open Drain Output)
R3111xxxxA
Series
GND
VDD
Rb
VDD
C
Ra
OUT
+
Adjusted Detector Threshold
=(−VDET)×(Ra+Rb)/Rb
Hysteresis Voltage
=(VHYS)×(Ra+Rb)/Rb
∗) If the value of Ra is set excessively large, voltage
drop may occur caused by the supply current of IC
itself, and detector threshol d may vary.
• Window Comparator Circuit
(Nch Open Drain Output)
R3111xxxxA
Series
VDD
GND
OUT
VDD
R3111xxxxA
Series
VDD
GND OUT
−VDET1
WC_OUT
−VDET2
VDD −VDET1
GND
WC_OUT
−VDET2
GND
• Over-charge Preventing Circuit
R3111xxxxC
Series
VDD
GND
OUT
R4R2
R1
R3
Light
Solar Battery
D1
Load
R3111x
26
TECHNICAL NOTES
When R3111xxxxA/B (Nch Open Drain Output Type) is used in Figure A or Figure B, if impedance of Voltage
Supply pin, VDD and VDD of this IC is large, detector threshold level would shift by voltage dropdown caused by
the consumption current of the IC itself. Released voltage may also shift and delay time for start-up might be
generated by this usage.
When R3111xxxxC (CMOS Output Type) is used in Figure A or Figure B, Output level could be unstable by
cross conduction current which is g enerated at detector thre shold level or at release d voltage l evel, therefore, do
not use this IC with the connection in Figure A or Figure B.
The connection in Figure C may cause the oscillation in both R3111xxxxC (CMOS Output) and R3111xxxxA/B
(Nch Open Drain Output), therefore do not use R3111x Series with the connection in Figure C.
GND
VDD
R3111x
Series OUT
R2
R3111x
Series OUT
GND GND
VDD
R3111x
Series OUT
R2
R1
VDD
R1
VDD
R1
VDD
Figure A Figure B Figure C
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1.Theproductsandtheproductspecificationsdescribedinthisdocumentaresubjecttochangeor
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informationthereon.
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4.Thetechnicalinformationdescribedinthisdocumentshowstypicalcharacteristicsofand
exampleapplicationcircuitsfortheproducts.Thereleaseofsuchinformationisnottobe
construedasawarrantyoforagrantoflicenseunderRicoh'soranythirdparty'sintellectual
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5.
Theproductslistedinthisdocumentareintendedanddesignedforuseasgeneralelectronic
componentsinstandardapplications(officeequipment,telecommunicationequipment,
measuringinstruments,consumerelectronicproducts,amusementequipmentetc.).Those
customersintendingtouse
aproductinanapplicationrequiringextremequalityandreliability,
forexample,inahighlyspecificapplicationwherethefailureormisoperationoftheproduct
couldresultinhumaninjuryordeath(aircraft,spacevehicle,nuclearreactorcontrolsystem,
trafficcontrolsystem,automotiveand
transportationequipment,combustionequipment,safety
devices,lifesupportsystemetc.)shouldfirstcontactus.
6.Wearemakingourcontinuousefforttoimprovethequalityandreliabilityofourproducts,but
semiconductorproductsarelikelytofailwithcertainprobability.Inordertopreventanyinjuryto
personsordamagestopropertyresultingfromsuchfailure,customersshouldbecarefulenough
toincorporatesafetymeasuresintheirdesign,suchasredundancyfeature,firecontainment
featureandfail-safefeature.Wedonotassumeanyliability
orresponsibilityforanylossor
damagearisingfrommisuseorinappropriateuseoftheproducts.
7.Anti-radiationdesignisnotimplementedintheproductsdescribedinthisdocument.
8.
PleasecontactRicohsalesrepresentativesshouldyouhaveanyquestionsorcomments
concerningtheproductsorthetechnicalinformation.
RICOHCOMPANY.,LTD.ElectronicDevicesCompany
■
Ricoh presented with the Japan Management Quality Award for 1999
.
Ricoh continually strives to promote customer satisfaction, and shares the achievements
of its management quality improvement program with people and society.
■Ricoh awarded ISO 14001 certification.
The Ricoh Group was awarded ISO 14001 certification, which is an international standard for
environmental management systems, at both its domestic and overseas production facilities.
Our current aim is to obtain ISO 14001 certification for all of our business offices.
Ricoh completed the organization of the Lead-free production for all of our products.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that
will be shipped from now on comply with RoHS Directive.