SAMSUNG SEMICONDUCTOR INC MMBT5088 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic - - Symbol Rating Unit Collector-Base Voltage Vepo 35 Vv Collector-Emitter Voltage Vceo 30 Vv Emitter-Base Voltage Vino 4.5 Vv Collector Current le 50 mA Collector Dissipation Pe 350 mW Storage Temperature Tstg 150 C 4 ELECTRICAL CHARACTERISTICS (T,=25C) aye o Bf rse4nue oooze7e 1 i _NPN EPITAXIAL SILICON TRANSISTOR T29-19 SOT-23 1. Base 2. Emitter 3. Collector f Characteristic Symboi Test Condition Mia Max Unit Coliector-Base Breakdown Voltage BV cso Ic=100pA, IE=0 35 Vv - Collector-Emitter Breakdown Voltage | BVceo = lc=1mA. la=O 30 Vv Collector Cutoff Current Iceo Vea=20V, le=0 50 nA Emitter Cutoff Current lego Ver =3V. lL =O 50 nA ; DC Current Gain Ree Vce=5V, Ig=100HA 300 900 t Vee=5V, le= IMA i 350 : . Vce=5V, Ie=1 OmA i 300 : Collector-Emitter Saturation Voltage Vce (sat) | c= 10mA; lge=1.0MA i 0.5 Vv i Base-Emitter Saturation Voltage Voc (Sat) | c= 10mA, p=1.0MA | 0.8 Vv ; Current Gain-Bandwidth Product fr lb=500pA, Vce=5V 50 MHz ; f=20MHz | : Collector Base Capacitance Ccb ' Vee=5V, le=0 - i 4 pF : i {=100kHz } i Noise Figure NF : [o=100pnA. Vee=5V ' 3 dB i Rs=10K2 i i f=10Hz to 15.7KHz | t 1 . : Marking 4] 1Q eo cee SAMSUNG SEMICONDUCTOR 546.SAMSUNG SEMICONDUCTOR INC. oo. 14e D seuss 0007277 L |] MMBT5088 - _NPN EPITAXIAL SILICON TRANSISTOR : ) T-2A~14 OC CURRENT GAIN . CURRENT GAIN BANOWIOTH PRODUCT 3 8s 3 hee, OC CURRENT GAIN es (8 o ot 03 05. 1 3.CCS50 wn 3 50) 10 al 03 of 1 306S8 10 w 50 100 fc (mA), COLLECTOR CURRENT fc (mA), COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR-BASE CAPAOITANCE - oa 8 B j i. 4 95 . & g 3 e ar os Hoss > oot al 03 05 1 308 0 3 500 (00 1 3 5 40 am 80 100-200 fc (mA}, COLLECTOR CURRENT Vou (V), COLLECTOR BASE VOLTAGE ae SAMSUNG SEMICONDUCTOR 547NPN EPITAXIAL SILICON TRANSISTOR T= 2a- 19 MMBT5088 oe cURRENT GAIN CURRENT GAIN BANDWIDTH 100 t000 f 500 500 300 i 300 hee, DC CURRENT GAIN ge & 6 a or 0305 1 3 5 10 kc (mA), COLLECTOR CURRENT NOISE FIGURE Ax (Ka), SOURCE RESISTANCE oot oi os O5 1 a5 10 te (mA), COLLECTOR CURRERT wo 500 (100 8 30 50 100 g 83. fr (liz), CURRENT GAIN-BANDWIDTH 1 ol 03 05 1 3.065 40 ~ fe (mA), COLLECTOR CURRENT 50 (100 c samsunc SEMICONDUCTOR 548