HMC797A v02.0418 AMPLIFIERS - LINEAR & POWER - CHIP GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features The HMC797A is ideal for: High P1dB Output Power: +29 dBm * Test Instrumentation High Psat Output Power: +31 dBm * Military & Space High Gain: 15 dB * Fiber Optics High Output IP3: 41 dBm Supply Voltage: +10 V @ 400 mA 50 Ohm Matched Input/Output Die Size: 2.89 x 1.55 x 0.1 mm Functional Diagram General Description The HMC797A is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 23% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25 C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 10 13 Typ. Max. Min. 10 - 18 14.5 13.5 15 14 Typ. Max. Units 18 - 22 GHz 16 dB Gain Flatness 0.5 0.7 0.4 dB Gain Variation Over Temperature 0.007 0.008 0.010 dB/ C Input Return Loss 15 16 17 dB Output Return Loss 17 17 15 dB 29 dBm Output Power for 1 dB Compression (P1dB) 27 29 27 29 26.5 Saturated Output Power (Psat) 31 31 31.5 dBm Output Third Order Intercept (IP3) *Measurement taken at Pout/Tone = + 18 dBm 42 41 40 dBm Noise Figure 3.5 3 3.5 dB Supply Current (Idd) 400 400 400 mA Supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V *Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical, Vgg1 = -0.6V Typical to achieve Idd = 400 mA. 1 Information by Analog Devices is orders: believed toAnalog be accurate and reliable. no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price,furnished delivery, and to place Devices, Inc.,However, One Technology Way, P.O. Box Norwood, MA 02062-9106 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under anyApplication patent or patent Support: rights of Analog Devices. Phone: 1-800-ANALOG-D Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Low Frequency Gain & Return Loss 20 20 15 15 10 RESPONSE (dB) RESPONSE (dB) 10 5 S21 S11 S22 0 -5 -10 5 S21 S11 S22 0 -5 -10 -15 -20 -15 -25 -20 -30 -35 0.1 -25 0 5 10 15 20 25 30 1 FREQUENCY (GHz) 100 1000 Gain vs. Vdd 18 18 16 16 14 14 GAIN (dB) GAIN (dB) Gain vs. Temperature 12 10 12 8V 9V 10V 11V 10 +25C +85C -55C 8 8 6 6 0 4 8 12 16 20 0 24 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature Gain vs. Idd 18 0 16 +25C +85C -55C RETURN LOSS (dB) -5 14 GAIN (dB) 10 FREQUENCY (MHz) AMPLIFIERS - LINEAR & POWER - CHIP Broadband Gain & Return Loss 12 300mA 350mA 400mA 10 -10 -15 -20 8 6 -25 0 4 8 12 16 FREQUENCY (GHz) 20 24 0 4 8 12 16 20 24 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Input Return Loss vs. Vdd Input Return Loss vs. Idd 0 8V 9V 10V 11V 300mA 350mA 400mA -5 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -10 -15 -20 -20 -25 -25 0 4 8 12 16 20 0 24 4 Output Return Loss vs. Temperature 12 16 20 24 20 24 Output Return Loss vs. Vdd 0 0 +25C +85C -55C 8V 9V 10V 11V -5 RETURN LOSS (dB) -5 -10 -15 -20 -10 -15 -20 -25 -25 0 4 8 12 16 20 24 0 4 FREQUENCY (GHz) 8 12 16 FREQUENCY (GHz) Output Return Loss vs. Idd Reverse Isolation vs. Temperature 0 0 300mA 350mA 400mA +25C +85C -55C -10 ISOLATION (dB) -5 RETURN LOSS (dB) 8 FREQUENCY (GHz) FREQUENCY (GHz) RETURN LOSS (dB) AMPLIFIERS - LINEAR & POWER - CHIP 0 -10 -15 -20 -30 -40 -50 -20 -60 -25 -70 0 4 8 12 16 FREQUENCY (GHz) 3 20 24 0 4 8 12 16 20 24 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Noise Figure vs. Idd Noise Figure vs. Temperature 9 300mA 350mA 400mA 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 9 +25C +85C -55C 8 7 6 5 4 3 7 6 5 4 3 2 2 1 1 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 24 2 4 32 30 30 P1dB (dBm) P1dB (dBm) 32 28 26 +25C +85C -55C 10 12 14 16 18 20 22 24 28 26 +25C +85C -55C 24 22 22 0 0.3 0.5 0.8 1 1.3 1.5 0 4 FREQUENCY (GHz) 8 12 16 20 24 FREQUENCY (GHz) P1dB vs. Idd P1dB vs. Vdd 32 32 30 30 P1dB (dBm) P1dB (dBm) 8 P1dB vs. Temperature Low Frequency P1dB vs. Temperature 24 6 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP 10 10 28 26 8V 9V 10V 11V 24 28 26 300mA 350mA 400mA 24 22 22 0 4 8 12 16 FREQUENCY (GHz) 20 24 0 4 8 12 16 20 24 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz 34 32 32 30 30 Psat (dBm) Psat (dBm) Psat vs. Temperature 34 28 26 +25C +85C -55C 24 22 22 0 0.3 0.5 0.8 1 1.3 1.5 0 4 8 FREQUENCY (GHz) 16 20 24 Psat vs. Idd Psat vs. Vdd 34 32 32 30 30 Psat (dBm) 34 28 24 28 26 8V 9V 10V 11V 26 300mA 350mA 400mA 24 22 22 0 4 8 12 16 20 0 24 4 8 527 447 427 10 Idd 5 407 387 0 2 4 6 8 10 12 24 14 INPUT POWER (dBm) 16 18 20 460 30 449 Pout Gain PAE 25 438 20 427 15 416 Idd (mA) 15 Idd (mA) 467 Pout (dBm), GAIN (dB), PAE (%) 487 20 0 20 35 507 Pout Gain PAE 25 16 Power Compression @ 10 GHz 35 30 12 FREQUENCY (GHz) FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) 12 FREQUENCY (GHz) Power Compression @ 2 GHz 5 28 26 +25C +85C -55C 24 Psat (dBm) AMPLIFIERS - LINEAR & POWER - CHIP Low Frequency Psat vs. Temperature 405 10 Idd 394 5 383 0 0 2 4 6 8 10 12 14 16 18 20 INPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz PAE @ Psat vs. Frequency Power Compression @ 22 GHz 505 32 25 490 Pout Gain PAE 24 20 475 460 16 445 12 430 Idd (mA) 20 PAE (%) 28 Idd 4 5 400 0 385 0 0 2 4 6 8 10 12 14 16 +25C +85C -55C 10 415 8 15 18 0 20 4 8 Power Dissipation @ 85 C 20 24 35 Gain (dB), P1dB (dBm), Psat (dBm) POWER DISSIPATION (W) 16 Gain & Power vs. Vdd @ 2 GHz 5 4.5 4 3.5 2GHz 4 GHz 8 GHz 12 GHz 16 GHz 20 GHz 22 GHz 3 2.5 2 30 25 Gain P1dB Psat 20 15 10 0 2 4 6 8 10 12 14 16 18 20 22 8 9 10 INPUT POWER (dBm) 11 Vdd (V) Gain & Power vs. Vdd @ 10 GHz Gain & Power vs. Vdd @ 22 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) 35 Gain (dB), P1dB (dBm), Psat (dBm) 12 FREQUENCY (GHz) INPUT POWER (dBm) AMPLIFIERS - LINEAR & POWER - CHIP 36 Pout (dBm), GAIN (dB), PAE (%) 30 520 30 25 Gain P1dB Psat 20 15 10 30 25 Gain P1dB Psat 20 15 10 8 9 10 Vdd (V) 11 8 9 10 11 Vdd (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Gain & Power vs. Idd @ 10 GHz Gain & Power vs. Idd @ 2 GHz Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 35 30 25 Gain P1dB Psat 20 15 10 320 340 360 380 400 25 Gain P1dB Psat 20 15 300 320 340 Idd (mA) 380 400 Output IP3 vs. Temperature @ Pout = +18 dBm / Tone Gain & Power vs. Idd @ 22 GHz 35 46 44 30 IP3 (dBm) 42 25 Gain P1dB Psat 20 40 38 36 +25C +85C -55C 34 15 32 10 30 300 320 340 360 380 400 0 4 Idd (mA) 46 44 44 42 42 40 40 38 8V 9V 10V 11V 34 12 16 20 24 20 24 Output IP3 vs. Idd @ Pout = 18 dBm / Tone 46 36 8 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 360 Idd (mA) Output IP3 vs. Vdd @ Pout = 18 dBm / Tone 38 36 300 mA 350 mA 400 mA 34 32 32 30 30 0 4 8 12 16 FREQUENCY (GHz) 7 30 10 300 Gain (dB), P1dB (dBm), Psat (dBm) AMPLIFIERS - LINEAR & POWER - CHIP 35 20 24 0 4 8 12 16 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz 70 60 60 50 50 IM3 (dBc) IM3 (dBc) 70 40 2GHz 6GHz 10GHz 14GHz 18GHz 22GHz 30 20 40 2GHz 6GHz 10GHz 14GHz 18GHz 22GHz 30 20 10 10 0 0 10 12 14 16 18 20 10 22 12 14 70 60 60 50 50 IM3 (dBc) IM3 (dBc) 70 40 2GHz 6GHz 10GHz 14GHz 18GHz 22GHz 20 20 22 20 22 20 24 40 2GHz 6GHz 10GHz 14GHz 18GHz 22GHz 30 20 10 10 0 0 10 12 14 16 18 20 22 10 12 14 Pout/TONE (dBm) 55 50 50 45 45 IP2 (dBm) 60 55 40 35 30 40 35 30 8V 9V 10V 11V 25 +25C +85C -55C 20 18 OIP2 vs. Vdd @ Pout = +18 dBm / Tone 60 25 16 Pout/TONE (dBm) OIP2 vs. Temperature @ Pout = +18 dBm / Tone IP2 (dBm) 18 Output IM3 @ Vdd = 11 V Output IM3 @ Vdd = 10 V 30 16 Pout/TONE (dBm) Pout/TONE (dBm) AMPLIFIERS - LINEAR & POWER - CHIP Output IM3 @ Vdd = 9 V Output IM3 @ Vdd = 8 V 20 15 15 10 10 0 4 8 12 16 FREQUENCY (GHz) 20 24 0 4 8 12 16 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 8 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz OIP2 vs. Idd @ Pout = +18 dBm / Tone Second Harmonics vs. Temperature @ Pout = + 18dBm 50 SECOND HARMONIC (dBc) 55 50 IP2 (dBm) 45 40 35 30 25 300 mA 350 mA 400 mA 20 10 30 20 +25C +85C -55C 10 0 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) Second Harmonics vs. Vdd @ Pout = + 18dBm 16 20 24 20 24 Second Harmonics vs. Idd @ Pout = + 18dBm 50 SECOND HARMONIC (dBc) 50 40 30 20 8V 9V 10V 11V 10 40 30 20 300mA 350mA 400mA 10 0 0 0 4 8 12 16 20 0 24 4 8 12 16 FREQUENCY(GHz) FREQUENCY(GHz) Igg1 vs. RF Input Power 0.1 50 0.05 40 0 Igg1 (mA) SECOND HARMONIC (dBc) 12 FREQUENCY(GHz) Second Harmonics vs. Pout 30 20 +10dBm +12dBm +14dBm +16dBm +18dBm +20dBm 10 -0.05 -0.1 2GHz 6GHz 10GHz 14GHz 18GHz 22GHz -0.15 -0.2 0 0 4 8 12 16 FREQUENCY(GHz) 9 40 15 SECOND HARMONIC (dBc) AMPLIFIERS - LINEAR & POWER - CHIP 60 20 24 0 2 4 6 8 10 12 14 16 18 20 INPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Igg2 vs. RF Input Power 2.5 2 2GHz 6GHz 10GHz 14GHz 18GHz 22GHz IDD (mA) Igg2 (mA) 1.5 1 0.5 0 -0.5 -1 0 2 4 6 8 10 12 14 INPUT POWER (dBm) 16 18 20 640 600 560 520 480 440 400 360 320 280 240 200 160 120 80 40 0 -40 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 Vgg1 (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D AMPLIFIERS - LINEAR & POWER - CHIP Idd vs. Vgg1 Representative of a Typical Device 10 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz AMPLIFIERS - LINEAR & POWER - CHIP Absolute Maximum Ratings 11 Reliability Information Drain Bias Voltage (Vdd) +12 Vdc Channel Temperature 175 C Gate Bias Voltage (Vgg1) -3 to 0 Vdc 147.8 C Gate Bias Voltage (Vgg2) +2.5 V to (Vdd - 5.5 V) Nominal Junction Temperature (T=85 C, Vdd = 10 V) Continuous Pdiss (T= 85 C) (derate 63.7 mW/C above 85 C) 15.7 C/W 5.73 W Thermal Resistance (channel to die bottom) RF Input Power (RFIN) +27 dBm Output Load VSWR 7:1 Storage Temperature -65 to 150 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class 1A - Passed 250V Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the "Packaging Information" section on our website for die packaging dimensions. [2] For alternate packaging information contact Analog Devices, Inc. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .0031" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE .002" For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D AMPLIFIERS - LINEAR & POWER - CHIP Outline Drawing 12 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz AMPLIFIERS - LINEAR & POWER - CHIP Pad Descriptions 13 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For nominal operation +3.5V should be applied to Vgg2. 4, 7 ACG2, ACG4 Low frequency termination. Attach bypass capacitors per application circuit herein. 3 ACG1 Low frequency termination. Attach bypass capacitors per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow "MMIC Amplifier Biasing Procedure" application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Application Circuit AMPLIFIERS - LINEAR & POWER - CHIP Assembly Diagram NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network with low resistance. NOTE 2: Optional Capacitors to be used if part is to be operated below 200MHz. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 14 HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. RF Ground Plane Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005") Thick Moly Tab General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 15 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v02.0418 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz AMPLIFIERS - LINEAR & POWER - CHIP Notes: For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 16