AO SR MOS This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features e Polysilicon gate Improved stability and reliability FIELD EFFECT POWER TRANSISTOR Pie I IRF 142,143 24 AMPERES 100, RpS(ON) = 0.11 0 60 VOLTS 0.845(21.47) AX 065(1.65) DIA. M } it 7 0.063(1.60) oa, fj 0.057(1.45) No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling CASE TEMP. REFERENCE POINT .20(5.00) SOURCE DRAIN 0.182(4.08) ya, 0,15(3.84) 2 HOLES 1.050(26.68) N-CHANNEL CASE STYLE TO-204AE (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) MAX. i .358(9.09) MAX + jne SEATING PLANE .426( 10.82) MIN. MAX. 0,875(17,15. { 0.850(16.51) 0.440(11.18) 0.420(10.67) 4.197(30.40) 4.177(20.90) 1.573(39.96) q NS MAX. Lew 0:225(5.72) DRAIN 0,208(8.21) {CASE) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF142 IRF143 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Rag = 1M. Vpa@R 100 60 Volts Continuous Drain Current @ To = 25C Ip 24 24 A To = 100C 15 15 A Pulsed Drain Current IDM 96 96 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 W/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rguc 1.00 1.00 C/W Thermal Resistance, Junction to Ambient RaJa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: 4% from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 131electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF142 | BVpss 100 _ _ Volts (Vag = OV, Ip = 250 pA) IRF143 60 _ Zero Gate Voltage Drain Current loss (Vps = Max Rating, Ves = OV, To = 26C) _ _ 250 uA (Vps = Max Rating, 0.8, Vgg = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current (Vag = 20V) lass _ _ +100 nA on characteristics* Gate Threshoid Voltage To = 25C | VasctH) 2.0 - 4.0 Volts (Vps = Vas, Ip = 250 uA) On-State Drain Current \ 24 _ _ A (Vag = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (Vas = 10V, Ip = 15A) Rps(on) _ 0.09 0.11 Ohms Forward Transconductance dynamic characteristics input Capacitance Vas = OV Ciss _ 1400 1600 pF Output Capacitance Vps = 25V Coss _ 550 800 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 120 300 pF switching characteristics* Turn-on Delay Time Vps = 30V ta(on) _ 20 _ ns Rise Time Ip = 15A, Vag = 15V tr _ 115 _ ns Turn-off Delay Time Reen = 509, Reg = 12.59 | taoffy _ 50 _ ns Fall Time (Res (equiv.) = 100) tf _ 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 24 A Pulsed Source Current - Ism _ _ 96 A Diode Forward Voitage (To = 25C, Vag = OV, Ig = 24A) Vsp _ 1.1 2.3 Volts Reverse Recovery Time ter _ 250 _ ns (Ig = 27A, dig/dt = 100A/usec, To = 125C) Qrar 2.0 _ uc *Pulse Test: Pulse width < 300 us, duty cycle = 2% 1000 800 600 400 CONDITIONS: RAps(on) CONDITIONS: Ip = 15 A, Vag = 10V Vast) CONDITIONS: Ip = 250A, Vog = Veg 200 100 80 60 40 a 10 Ip, DRAIN CURRENT (AMPERES) 8 6} OPERATION IN THIS AREA AL MAY BE LIMITED BY Rogion; Rogiony AND Vasc) NORMALIZED I [SINGLE PULSE Fosion) Vestn) 160 T.=28C IRF1 1 IRF1 oc 0 i 2 4 6 810 20 40 6080100 200 400 600 1000 40 9 40 80 120 Vps- DRAIN-SOURCE VOLTAGE (VOLTS) T,, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rogsion; AND Vesirx) VS. TEMP. 132