NOT RECOMMENDED FOR NEW DESIGN USE ZXTN4240F DSS4240T 40V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data * * * * * BVCEO > 40V IC = 2A High Continuous Collector Current ICM = 3A Peak Pulse Current Low Saturation Voltage 180mV Max @ IC = 1A RCE(SAT) = 60m at 0.5A for a Low Equivalent On-Resistance * * * * * * * 730mW Power Dissipation Complimentary PNP Type: DSS5240T Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish--Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight: 0.008 grams (Approximate) * * * C SOT23 E C B B E Top View Device Symbol Top View Pin Configuration Ordering Information (Note 4) Product DSS4240T-7 DSS4240T-13 Notes: Compliance NRND (use ZXTN4240F-7) NRND (use ZXTN4240F-7) Marking ZN2 ZN2 Reel Size (inches) 7 13 Tape Width (mm) 8 8 Quantity per Reel 3000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 5. NRND - Not recommended for new design. ZN2 Date Code Key Year 2013 Code A Month Code Jan 1 2014 B Feb 2 DSS4240T Document number: DS31623 Rev. 6 - 3 2015 C Mar 3 2016 D Apr 4 YM Marking Information 2017 E May 5 ZN2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 2021 I Sep 9 Oct O 2022 J Nov N 2023 K Dec D September 2018 (c) Diodes Incorporated DSS4240T Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Peak Base Current Symbol VCBO VCEO VEBO ICM IC IBM Value 40 40 5 3 2 0.3 Unit V V V A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Symbol Value Unit Power Dissipation (Note 6) Characteristic PD 730 mW Power Dissipation (Note 7) PD 600 mW Thermal Resistance, Junction to Ambient Air (Note 6) RJA 171 C/W Thermal Resistance, Junction to Ambient Air (Note 7) RJA 209 C/W Thermal Resistance, Junction to Lead (Note 8) RJL 75 C/W TJ, TSTG -55 to +150 C Operating and Storage Temperature Range ESD Ratings (Note 9) Characteristic Electrostatic Discharge--Human Body Model Electrostatic Discharge--Machine Model Notes: Symbol ESD HBM ESD MM Value 4000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 5, except the device is mounted on minimum recommended pad layout. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DSS4240T Document number: DS31623 Rev. 6 - 3 2 of 7 www.diodes.com September 2018 (c) Diodes Incorporated DSS4240T Thermal Characteristics and Derating Information VCE(sat) Limited 0.8 15mm x 15mm 1oz Copper Max Power Dissipation (W) -IC Collector Current (A) 10 1 DC 1s 100ms 100m 10ms 1ms Single Pulse Tamb=25C 100s 10m 100m 1 10 -VCE Collector-Emitter Voltage (V) 15mm x 15mm 1oz Copper 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.00 20 160 Tamb=25C 15mm x 15mm 1oz Copper 120 D=0.5 80 40 Single Pulse D=0.2 0 100 1m D=0.05 D=0.1 10m 100m 1 Pulse Width (s) 10 Document number: DS31623 Rev. 6 - 3 80 100 120 140 160 100 Single Pulse Tamb=25C 15mm x 15mm 1oz Copper 100 1k Transient Thermal Impedance DSS4240T 60 Temperature (C) Derating Curve Maximum Power (W) Thermal Resistance (C/W) Safe Operating Area 40 10 1 100 1m 10m 100m 1 10 Pulse Width (s) 100 1k Pulse Power Dissipation 3 of 7 www.diodes.com September 2018 (c) Diodes Incorporated DSS4240T Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 40 40 5 -- -- -- -- -- -- -- -- -- -- -- -- 100 50 100 V V V nA A nA -- -- -- -- -- 30 -- -- -- 60 -- -- -- -- -- -- 70 100 180 180 320 200 1.1 0.75 m V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 8) IEBO Collector-Emitter Saturation Voltage VCE(sat) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(sat) VBE(sat) VBE(on) 350 300 300 150 -- -- -- -- -- -- -- -- Transition Frequency fT 100 -- -- MHz Output Capacitance Cob -- -- 20 pF DC Current Gain Note: hFE -- mV Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = +150C VEB = 4V, IC = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 750mA, IB = 15mA IC = 1A, IB = 50mA IC = 2A, IB = 200mA IC = 500mA, IB = 50mA IC = 2A, IB = 200mA VCE = 2V, IC = 100mA VCE = 10V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1,000 1.8 IB = 5mA 1.6 IB = 4mA 1.4 IB = 3mA 1.2 1.0 IB = 2mA 0.8 0.6 IB = 1mA 0.4 TA = 150C TA = 85C TA = 25C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 2.0 TA = -55C 100 VCE = 2V 0.2 0 0 10 0.001 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DSS4240T Document number: DS31623 Rev. 6 - 3 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 4 of 7 www.diodes.com September 2018 (c) Diodes Incorporated DSS4240T VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 TA = 150C TA = 85C TA = 25C TA = -55C 0.01 0.001 0.001 VCE = 2V 1.0 0.8 TA = -55C 0.6 TA = 25C 0.4 0.2 TA = 85C TA = 150C 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 IC/IB = 10 f = 1MHz 1.0 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 0.8 TA = -55C 0.6 TA = 25C 0.4 TA = 85C 100 Cibo 10 TA = 150C Cobo 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 100 10 VCE = 10V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current DSS4240T Document number: DS31623 Rev. 6 - 3 5 of 7 www.diodes.com September 2018 (c) Diodes Incorporated DSS4240T Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X DSS4240T Document number: DS31623 Rev. 6 - 3 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com September 2018 (c) Diodes Incorporated DSS4240T IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com DSS4240T Document number: DS31623 Rev. 6 - 3 7 of 7 www.diodes.com September 2018 (c) Diodes Incorporated