DSS4240T
40V NPN LOW SATURATION TRANSISTOR IN SOT23
Features
BVCEO > 40V
IC = 2A High Continuous Collect or Current
ICM = 3A Peak Pulse Current
Low Saturation Voltage 180mV Ma x @ IC = 1A
RCE(SAT) = 60m at 0.5A for a Low Equivalent On-Resistance
730mW Power Dissipation
Complimentary PNP Type: DSS5240T
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliabilit y
Mechanical Data
Case: SOT23
Case Material: Molded Plast ic, "Green” Molding Compound
UL Flamm ability Classification Rating 94V-0
Moisture Sensitivi t y: Level 1 per J-STD-020
Terminals: FinishMatte Tin Plated Leads, Sol derabl e per MIL-
STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Product
Compliance
Marking
Reel Size (inches)
Quantity per Reel
DSS4240T-7
NRND (use ZXTN4240F-7)
ZN2
7
3000
DSS4240T-13
NRND (use ZXTN4240F-7)
ZN2
13
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For pack agin g details, go to our we b si te at http://www.diodes.com/products/packages.html.
5. NRND Not recomm ended for ne w desig n.
Marking Information
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
Code
A
B
C
D
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT23
Device Symbol
Top View
Pin Configuration
Top View
ZN2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C =
2015)
M = Month (ex: 9 = September)
ZN2
YM
C
E
B
C
E
B
NOT RECOMMENDED FOR NEW DESIGN
USE ZXTN4240F
DSS4240T
Document number: DS31623 Rev. 6 - 3 1 of 7
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© Diodes Incorporated
DSS4240T
Absolute Maxim um Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Collector Current
ICM
3
A
Continuous Coll ect or Current
IC
2
A
Peak Base Current
IBM
0.3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Not e 6) PD 730 mW
Power Dissipation (Not e 7) P
D
600 mW
Thermal Resistance, Junction to Ambient Air (Note 6) R
ϴJA
171 °C/W
Thermal Resistanc e, Junction to Ambient Air (Note 7)
R
ϴJA
209
°C/W
Thermal Resistance, Junction to Lead (Note 8)
RϴJL
75
°C/W
Operating and Storage Tem perature Range
TJ, TSTG
-55 to +150 °C
ESD Rating s (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic DischargeHuman Body Model
ESD HBM
4000
V
3A
Electrostat ic DischargeMachine Model
ESD MM
400
V
C
Notes: 6. For a device mounted with the collector lead on 15mm × 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 5, except the device is mounted on minimum recommended pad layout.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS4240T
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© Diodes Incorporated
DSS4240T
Thermal Characteristics and Derating Information
100m 110
10m
100m
1
10
15mm x 15mm 1oz Copper
Single Pulse
T
amb
=25°C
V
CE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe O perating A rea
-I
C
Collector Current (A)
-V
CE
Collector-Emitter Voltage (V)
020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
15mm x 15mm 1oz Copper
Derating Curve
Tem perature (°C)
M ax Pow er Dissipation (W )
100µ 1m 10m 100m 110 100 1k
0
40
80
120
160
T
amb
=25°C
15mm x 15mm 1oz Copper
Transient Therm al Im p edance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm al Resistance (°C/W )
Pulse Width (s)
100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse
T
amb
=25°C
15mm x 15mm 1oz Copper
Pu lse Power Dissipation
Pulse Width (s)
M axim um Pow er (W )
DSS4240T
Document number: DS31623 Rev. 6 - 3 3 of 7
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© Diodes Incorporated
DSS4240T
Electrical Characteristics (@TA = +25°C, unless otherwise spec ifi ed.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CH ARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
40
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
40
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
5
V
IE = 100µA
Collector-Base Cutoff Current ICBO
100
nA
VCB = 30V, IE = 0
50
µA
VCB = 30V, IE = 0, TA = +150°C
Emitter-Base Cutoff Current
IEBO
100
nA
VEB = 4V, IC = 0
ON CHARACTERIS TICS (Note 8)
DC Current Gain hFE
350
VCE = 2V, IC = 0.1A
300
VCE = 2V, IC = 0.5A
300
VCE = 2V, IC = 1A
150
VCE = 2V, IC = 2A
Collector-Emitter Saturation Voltage VCE(sat)
70
mV
IC = 100mA, IB = 1mA
30
100
IC = 500mA, IB = 50mA
180
IC = 750mA, IB = 15mA
180
IC = 1A, IB = 50mA
320
IC = 2A, IB = 200mA
Equivalent On-Resistance
RCE(sat)
60
200
m
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(sat)
1.1
V
IC = 2A, IB = 200mA
Base-Emitt er T urn-on Voltage
VBE(on)
0.75
V
VCE = 2V, IC = 100mA
SM ALL SIGNAL CHARACTERISTICS
Transit i on Frequency fT 100 MHz
V
CE
= 10V, I
C
= 100mA,
f = 100MHz
Output Capacit ance
Cob
20
pF
VCB = 10V, f = 1 MHz
Note: 10. Me asu red under pulsed co nditions. Pulse wi dt h 300µs. Duty cycle 2%.
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specifi ed. )
0 2 4 6 8 10
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collec tor Current
vs. Collector-Emitter Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
I , COLLECTOR CURRENT (A)
C
1.8
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0.001 0.01 0.1 110
I , COLLECTOR CURRENT (A)
C
Fig. 3 Typical DC Current G ain vs. Collector Curr ent
10
100
1,000
h , DC CURRENT GAIN
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
DSS4240T
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© Diodes Incorporated
DSS4240T
0.001 0.01 0.1 110
I , COLLECTOR CURRENT (A)
C
Fig. 4 Typical Collec tor-Emitter Saturation Voltag e
vs. Collector Current
0.001
0.01
0.1
1
V , COLLECTOR-EMITTER
SATURATION
CE(SAT)
VOLTAGE (V)
I /I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.001 0.01 0.1 110
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Tu rn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.001 0.01 0.1 110
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0.1 110 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Ty pical Capacitance Characterist ic s
1
10
100
1,000
CAPACITANCE (pF)
C
ibo
C
obo
f = 1MHz
010 20 30 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Ty pical Gain-Ba ndwidth Produc t
vs. Collector Current
1
10
100
1,000
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
V = 10V
f = 100MHz
CE
DSS4240T
Document number: DS31623 Rev. 6 - 3 5 of 7
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© Diodes Incorporated
DSS4240T
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
DSS4240T
Document number: DS31623 Rev. 6 - 3 6 of 7
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© Diodes Incorporated
DSS4240T
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTIO N).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark ri ghts, nor the rights of others. Any Customer or user of this document or products desc ribed herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harml ess against all damages.
Diodes Incorporated does not warrant or acc ept any li ability whatsoever in respect of any products purchased through unauthor ized sales channel.
Should Cust omers purchase or use Diodes Inc orporated products f or any unintended or unauthorized applicati on, Customers shal l indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirect l y, any claim of personal injury or death associat ed with such unintended or unauthori zed appli cat i on.
Products desc ribed herein may be covered by one or more United S tates, international or f oreign patents pending. Product names an d ma rkings
noted herein may also be covered by one or more United States, international or f orei gn tradem arks.
This document is written in English but may be translated into multiple languages for reference. Only the Englis h version of this document is the
final and determinative f orm at released by Diodes I ncorporat ed.
LIFE SU PP O R T
Diodes Inc orporated products are s pecifically not aut horized for use as critical components in lif e support devices or s ystems without the express
written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expec t ed to result in signifi cant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the f ai l ure of t he life support device or to affect its safety or effectiveness.
Customers repres ent that they have all necessary expertise i n the safety and regulatory ramif ications of their life support devices or systems, and
acknowledge and agree t hat they are solely respons i bl e for all legal, regulatory a nd safety-related requirements concerni ng t hei r products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
DSS4240T
Document number: DS31623 Rev. 6 - 3 7 of 7
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© Diodes Incorporated