STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
2/15
Table 3: Absolute Maximum ratings
(
) Pulse width limited by safe operat in g area
(1) ISD ≤1.0A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Therm al Data
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol Parameter Value Unit
DPAK / IPAK TO-92 SOT-223
VDS Drain-so urce Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ)600 V
VGS Gate- source Voltage ± 30 V
IDDrain Current (continuous) at TC = 25°C 1.0 0.4 0.4 A
IDDrain Current (continuous) at TC = 100°C 0.63 0.25 0.25 A
IDM (
)Drain Current (pulsed) 4 1.6 1.6 A
PTOT Total Dissipation at TC = 25°C 30 3 3.3 W
Derating Factor 0.24 0.025 0.025 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
Tj
Tstg Operating Junction Temperature
Storage Temperature -55 to 150 °C
DPAK/IPAK TO-92 SOT-223 Unit
Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W
Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W
TlMaximum Lead Temperature For Soldering
Purpose 275 260 °C
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 1A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 1mA, VGS = 0 600 V
IDSS Zero Gate Voltage
Drain Curre nt (VGS = 0) VDS = Max Rating
VDS = Max Rating, TC = 125 °C 1
50 µA
µA
IGSS Gate- body Leaka ge
Current (VDS = 0) VGS = ± 30V ±100 nA
VGS(th) Gate Thres hold Voltage VDS = VGS, ID = 250 µA 2.25 3 3.7 V
RDS(on) Static Drain-source On
Resistance VGS = 10V, ID = 0.5 A 8 8.5 Ω