1/15February 2006
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8- 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Ta bl e 1 : Ge neral Fea ture s
TYPICAL RDS(on) = 8
EXTREMELY HIGH dv/dt CAPABIL I T Y
ESD IMPROVED CAPABILITY
100% AVALANCHE TES TED
NEW HI G H VOLTAGE BENCHMARK
GATE CHARGE MI NIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demandin g ap plications. S uch series
comple ments ST full range of high voltage MOS-
FETs including revoluti onary MDmesh™ products.
APPLICATIONS
LOW POWER BATTERY CHARGERS
SWITH MODE LOW POWER
SUPPLIES(SMPS)
LOW POW ER, BALL AST, CFL (COMPA CT
FL U ORESCENT LAMPS)
Table 2: Order Codes
Figure 1: Package
Figure 2: I nternal Schematic Diagram
TYPE VDSS RDS(on) IDPw
STD1NK60
STD1NK60-1
STQ1HNK60R
STN1HNK60
600 V
600 V
600 V
600 V
< 8.5
< 8.5
< 8.5
< 8.5
1 A
1 A
0.4 A
0.4 A
30 W
30 W
3 W
3.3 W
3
2
1
TO-92 (Ammopack)
IPAK
1
2
2
3
SOT-223
1
3
DPAK
Part Number Marking Package Packaging
STD1NK60T4 D1NK60 DPAK TAPE & REEL
STD1NK60-1 D1NK60 IPAK TUBE
STQ1HNK60R 1HNK60R TO-92 BULK
STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK
STN1HNK60 N1HNK60 SOT-223 TAPE & REEL
Rev. 3
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
2/15
Table 3: Absolute Maximum ratings
(
) Pulse width limited by safe operat in g area
(1) ISD 1.0A, di/dt 100A/µs, V DD V(BR)DSS, Tj TJMAX.
Table 4: Therm al Data
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol Parameter Value Unit
DPAK / IPAK TO-92 SOT-223
VDS Drain-so urce Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k)600 V
VGS Gate- source Voltage ± 30 V
IDDrain Current (continuous) at TC = 2C 1.0 0.4 0.4 A
IDDrain Current (continuous) at TC = 100°C 0.63 0.25 0.25 A
IDM (
)Drain Current (pulsed) 4 1.6 1.6 A
PTOT Total Dissipation at TC = 25°C 30 3 3.3 W
Derating Factor 0.24 0.025 0.025 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
Tj
Tstg Operating Junction Temperature
Storage Temperature -55 to 150 °C
DPAK/IPAK TO-92 SOT-223 Unit
Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W
Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W
TlMaximum Lead Temperature For Soldering
Purpose 275 260 °C
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 1A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 1mA, VGS = 0 600 V
IDSS Zero Gate Voltage
Drain Curre nt (VGS = 0) VDS = Max Rating
VDS = Max Rating, TC = 125 °C 1
50 µA
µA
IGSS Gate- body Leaka ge
Current (VDS = 0) VGS = ± 30V ±100 nA
VGS(th) Gate Thres hold Voltage VDS = VGS, ID = 250 µA 2.25 3 3.7 V
RDS(on) Static Drain-source On
Resistance VGS = 10V, ID = 0.5 A 8 8.5
3/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(1) P ul sed: Pulse durat i on = 300 µ s, duty cycle 1.5 %.
(2) P ul se widt h l i m ited by safe opera ting area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID= 0.5 A 1 S
Ciss
Coss
Crss
Input Capacitanc e
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 156
23.5
3.8
pF
pF
pF
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 0.5 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
21)
6.5
5
19
25
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 1 A,
VGS = 10V, RG= 4.7
(see, Figure 23)
7
1.1
3.7
10 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed) 1
4A
A
VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 22)
140
240
3.3
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 22)
229
377
3.3
ns
µC
A
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
4/15
Fi gure 3: .Safe Operating Area For SOT-223
Figur e 4: Safe O per ating Area For DPAK/I PAK
Figur e 5: Safe Operating Area For TO-92
Figure 6: Thermal Impedance For SOT-223
Figure 7: Thermal Impedance For DPAK/IPAK
Figure 8: Thermal Impedance For TO-92
5/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figur e 9: Output Characteristics
Figure 10: Transconductance
Figur e 11: Capaci tance Vari ations
Figure 12: Transfer Characteristics
Figure 13: Gate Charge vs Gate-source Voltage
Figur e 14: Static Drain-sour ce On Resistanc e
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
6/15
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperatu re
Figure 16: Source-Drain Forward Characteris-
tics
Figure 17: Maximum Avalanche Energy vs
Temperature
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 19: Normalized BVDSS vs Temperature
Figure 20: Max Id Current vs Tc
7/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 21: Switching Times Test Circuit For
Resis tive Load
Figure 22: Test Circuit For Inductive Load
Sw itching and Diode Recov ery Times
Figure 23: Gate Charge Test Circuit
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
8/15
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105
e1 1.14 1.40 0.044 0.055
L 12.70 15.49 0.50 0.610
R 2.16 2.41 0.085 0.094
S1 0.92 1.52 0.036 0.060
W 0.41 0.56 0.016 0.022
V5° 5°
TO-92 MECHANICAL DATA
9/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A1 4.45 4.95 0.170 0.194
T 3.30 3.94 0.130 0.155
T1 1.6 0.06
T2 2.3 0.09
d 0.41 0.56 0.016 0.022
P0 12.5 12.7 12.9 0.49 0.5 0.51
P2 5.65 6.35 7.05 0.22 0.25 0.27
F1, F2 2.44 2.54 2.94 0.09 0.1 0.11
de lta H -2 2 -0.08 0.08
W 17.5 18 19 0.69 0.71 0.74
W0 5.7 6 6.3 0.22 0.23 0.24
W1 8.5 9 9.25 0.33 0.35 0.36
W2 0.5 0.02
H 18.5 20.5 0.72 0.80
H0 15.5 16 16.5 0.61 0.63 0.65
H1 25 0.98
D0 3.8 4 4.2 0.15 0.157 0.16
t0.90.035
L110.43
l1 3 0.11
de lta P -1 1 -0.04 0. 04
TO-92 AMMO PACK
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
10/15
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
o
10
o
A1 0.02
P008B
SOT-2 23 MECHANICAL DATA
11/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
12/15
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
C
A3
H
A1
DL
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (I PA K) MECH ANI CAL DAT A
0068771-E
13/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
14/15
Table 9: Revision History
Date Revision Descrip tion of Change s
22-Nov-2004 2 Added SOT-223 Package and new stylesheet
14-Feb-2006 3 Modified marking on Table 2
15/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
I
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
s
o
f use of s uc h infor mation nor for a ny i nfr ingeme nt o f p atents or o ther r ights of t hird par ties wh ich m ay res ul t from i ts use. N o lic ense i s gran te
d
b
y implication or otherwise under any patent or patent rights of STMicroelec tronics . Specific ations mentioned in this publication are subjec
t
t
o change without notice. This publication supersedes and replaces all in formation previously supplied. STMicroelectronics products are no
t
a
uthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2006 STMicroelectronics - All Rights Reserved
STMicroel ectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spai n - Sweden - Swi tzerland - United Kingdom - United States of America
www.st.com