- 584 -
EGP10A THRU EGP10M
1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
F
eatures
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature soldering guaranteed:
300/10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
M
echanical Data
Cases: JEDEC DO-
41 molded plastic over glass
body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
DO-41
Dimen s io n s in inches a n d (millimete r s )
M
aximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol
EGP
10A
EGP
10B
EGP
10D
EGP
10F
EGP
10G
EGP
10J
EGP
10K
EGP
10M
Unit
s
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
V
Maximum RMS Voltage VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@TA = 55 I(AV)
1.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) IFSM
30.0 A
Maximum Instantaneous Forward Voltage
@ 1.0A VF 0.95 1.25 1.7 V
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
IR 5.0
100.0 uA
uA
Maximum Reverse Recovery Time ( Note 1 )
T
J=25 Trr 50 75 nS
Typical Junction Capacitance ( Note 2 ) Cj 20 15 pF
Typical Thermal Resistance (Note 3) R
θ
JA
70 /W
Operating Temperature Range TJ -65 to + 150
Storage Temperature Range TSTG
-65 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
- 585 -
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm SET TIME BASE FOR
5/ 10ns/ cm
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
110 100
25
30
15
0
5
20
10
NUMBER OF CYCLES AT 60Hz
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
RATINGS AND CHARACTERISTIC CURVES (EGP10A THRU EGP10M)
FIG.5- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT.( A)
020 40 60 80 100 120 140
10
100
1000
1
0.1
0.01
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=100 C
0
Tj=150 C
0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT. (A)
250 50 75 125 175150100
0
1.0
0.5
AMBIENT TEMPERATURE. ( C)
o
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
FIG.6- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80.2
0.1
1
10
50
0.01
FORWARD VOLTAGE. (V)
Tj=25 C
0
Tj=150 C
0
PULSE WIDTH-300 S
1% DUTY CYCLE
EGP10A-EGP10D
EGP10F EGP10M
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
10.1 10 1000
100
10
20
30
50
60
5
0
40
REVERSE VOLTAGE. (V)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
EGP10A-EGP10D
EGP10F & EGP10M