2SK2147-01 N-CHANNEL SILICON POWER MOS-FET i Features @ High speed switching @ Low on-resistance @No secondary breakdown @ Low driving power @ High voltage @V,;= 30V Guarantee @ Avalanche-proof @ Applications @ Switching regulators @UPS @ DC-DC converters General purpose power amplifier SIPMOS FUJI POWER MOS-FET FAP-II SERIES @ Outline Drawings 545402 155203 119? 545202 032202 55t 03 353 06% 3.5402 1: Gate 2: Drain 3: Source JEDEC EIAJ @ Max. Ratings and Characteristics @Absolute Maximum Ratings(Tc=25C) Equivalent Circuit Schematic (unless otherwise specified) Items Symbols Ratings Units Drain (D) Drain-source voltage Vos 900 Vv Drain-gate voltage (Res =20KQ) Vocr 900 Vv Continuous drain current Ip 6 A Pulsed drain current Ipqpuis) 18 A Gate (G) Gate-source voltage Ves +30 Vv Source (S) Max. power dissipation Pp 80 WwW Operating and storage Ton 150 C temperature range Tste 55~ +150 C @Electrical Characteristics(Tc=25C) (unless otherwise specified) Items Symbols Test Conditions Min. | Typ. | Max. | Units Drain-source breakdown voltage Visrypss Ip=1mA Ves =0V 900 Vv Gate threshold voltage Vestn Ip=1lmA Vos = Ves 2.5 3.5 5.0 Vv Zero gate voltage drain current Toss voy ee i a mn Gate-source leakage current less Ves=t30V Vps=0V 10 100 nA Drain-source on-state resistance Roscon Ip=3A_ Ves=10V 2.1 2.8 Q Forward transconductance Zits Ip=3A Vos=25V 2.0 4.5 S Input capacitance Cass Vos = 29V 1200 1800 Output capacitance Coss Vos =0V 140 210 pF Reverse transfer capacitance Crss f =1MHz 50 75 Turn-on time ton tdony Vic =600V p=3A 35 90 (ton =tacom + tr) tr V..=10V 110 170 ns Turn-off time tors tdiorr R250 150 | 230 (tort = taorn +t) tr s 100 150 Avalanche capability lav L=1002H Tyj=25C 6 A Continuous reverse drain current Ipr 6 A Pulsed reverse drain current Tora 18 A Diode forward on-voltage Vsp Ip =2XIpp Ves=OV Ta =25C 1.0 1.5 Vv Reverse recovery time ter I-=Ipg Ves =0V 800 ns Reverse recovery charge Q:r -dI;/d=100A/ps Ten =25C 5 uc @Thermal Characteristics Items Symbols Test Conditions Min. | Typ. | Max. | Units Thermal resistance Rencena) channel to air 30.0 c/w Renny channel to case 1.56 | C/W me 2238792 0003158 5ib A2-3022SK2147-01 SIPMOS FUJI POWER MOS-FET @ Characteristics lo= f (Vos) : 80s pulse test, Tch= 25C Ros(on)= f(Tch): lo=3A, Vos=10V Ves=20V 10V OV T5V TOV 5V54 lo Roson) {A} (a) Vos(V) TenlC) Typical Output Characteristics Drain-Source on-State Resistance vs. Teh lo=f (Ves): 80us pulse test, Vos=25V Toh= 25C Ros(on)= (10): 80s pulse test, Tch= 25C Vos=5.0V 55V 6.0V Ib Roson) (A) (Q) 6 8 0 5 10 15 Ves(V) I fA) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo 8 6 TUT bbb act gfs= f( lo): 80s pulse test, Ves(th)= f (Tech) : Vos=Ves, lo= tm Vos=25V Tch=25C ; 6 4 4 gfs Vesitn) 2 (s) (VJ 2 0 0 . 0 10 5 0 50 100 150 ILA) Ta lC) Typical Forward Transconductance vs. Ip Gate Threshold Voltage vs. Ten = A2-303 Me 2238792 0003159 4SeSIPMOS FUJI POWER MOS-FET 2SK2147-01 ae ae 10" 800 C=f(Vos): Ves=0V, f= 1MHz Ves= f(Qg): lo=6A Vos 600 10 400 Cc Vos (nF) (v) 200 10-2 0 0 10 20 30 40 Vos[V] Og{nC} Typical Capacitance vs. Vos Typical Input Charge 10? lr= (Vso) : 804s pulse test, Ton= 25C 10! Po= f (Te) Ir Po (A) 10 (W) io" 0 50 100 150 Vso(V)) Te(C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T- lo= (Vos): D=0.01. Te=25C 102 10! 10 Zthch lp 10 (K/W) {A] 1071 1071 102 10 10 1o* 103 1072 107! 10 10! 10 10! 10? 108 t(S) Vos(V] Transient Thermal !mpedance Safe Operating Area Me 2298792 OO031b0 174 A2-304