Transistor 2SB0710, 2SB0710A (2SB710, 2SB710A) Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm Features Collector to 2SB0710 emitter voltage 2SB0710A -25 -50 VEBO -5 V Peak collector current ICP -1 A Collector current IC - 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C Symbol Collector to base 2SB0710 voltage 2SB0710A Collector to emitter 2SB0710 voltage 2SB0710A Emitter to base voltage +0.1 Marking symbol : Conditions ICBO VCB = -20V, IE = 0 VCBO IC = -10A, IE = 0 VCEO IC = -10mA, IB = 0 min C(2SB0710) D(2SB0710A) typ A V -25 V -50 IE = -10A, IC = 0 -5 85 hFE2 VCE = -10V, IC = -500mA*2 40 VCE(sat) IC = -300mA, IB = -30mA*2 Base to emitter saturation voltage VBE(sat) IC = -300mA, IB = -30mA*2 Transition frequency fT VCB = -10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = -10V, IE = 0, f = 1MHz V 340 - 0.35 - 0.6 -1.1 -1.5 200 V V MHz 15 6 *2 FE1 Unit -0.1 -60 VCE = -10V, IC = -150mA*2 *1h max -30 hFE1*1 Collector to emitter saturation voltage 0.4 -0.05 JEDEC:TO-236 EIAJ:SC-59 Mini Type Package VEBO Forward current transfer ratio 1.45 0.95 0.95 1:Base 2:Emitter 3:Collector (Ta=25C) Parameter Collector cutoff current 0.1 to 0.3 0.40.2 V Emitter to base voltage Electrical Characteristics +0.2 V -60 VCEO 2 Unit -30 VCBO 3 +0.1 2SB0710A 1 0.16 -0.06 2SB0710 base voltage Ratings 0.650.15 0 to 0.1 Collector to 2.9 -0.05 (Ta=25C) Symbol +0.25 1.5 -0.05 0.8 Parameter 1.90.2 Absolute Maximum Ratings +0.2 Large collector current IC. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.1 -0.1 +0.2 2.8 -0.3 0.650.15 pF Pulse measurement Rank classification Marking Symbol Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SB0710 CQ CR CS 2SB0710A DQ DR DS Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistor 2SB0710, 2SB0710A PC -- Ta IC -- VCE -700 200 160 -600 -800 120 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -600 80 -400 40 -3mA -2mA -500 -400 -300 -200 -200 -1mA -100 0 60 80 100 120 140 160 0 0 -2 -8 -10 -12 -1 - 0.3 Ta=75C - 0.1 -25C - 0.03 -30 -10 -3 25C -1 - 0.01 Ta=-25C 75C - 0.1 - 0.003 - 0.03 -10 -30 -100 -300 -1000 - 0.01 -1 Collector current IC (mA) -3 -10 -30 fT -- IE Collector output capacitance Cob (pF) VCB=-10V Ta=25C 200 160 120 80 40 0 1 3 10 30 Emitter current IE (mA) 100 300 Ta=75C 25C -25C 200 100 -1 -3 -10 Collector current IC (A) VCER -- RBE 16 12 8 4 0 -1 -10 400 0 - 0.01 - 0.03 - 0.1 - 0.3 -100 -300 -1000 IE=0 f=1MHz Ta=25C 20 -8 500 Cob -- VCB 24 -6 VCE=-10V Collector current IC (mA) 240 -4 600 IC/IB=10 - 0.3 -3 -2 Base current IB (mA) hFE -- IC -100 Base to emitter saturation voltage VBE(sat) (V) -3 - 0.001 -1 0 VBE(sat) -- IC IC/IB=10 25C -6 Collector to emitter voltage VCE (V) VCE(sat) -- IC -10 -4 Forward current transfer ratio hFE 40 -120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -1000 0 Transition frequency fT (MHz) VCE=-10V Ta=25C Ta=25C 0 2 IC -- I B -800 -1200 Collector current IC (mA) Collector power dissipation PC (mW) 240 IC=-2mA Ta=25C -100 -80 -60 2SB0710A -40 2SB0710 -20 0 -3 -10 -30 -100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (k) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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