MBRA340, NRVBA340, SBRA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Features * * * * * * * Small Compact Surface Mountable Package with J-Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SMA CASE 403D STYLE 1 1 Cathode MARKING DIAGRAM Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 70 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: Machine Model = C Human Body Model = 3B Device Meets MSL 1 Requirements 2 Anode A34 AYWWG A34 = Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping MBRA340T3G NRVBA340T3G, SMA 5,000 / NRVBA340T3G-VF01, (Pb-Free) Tape & Reel SBRA340T3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2013 January, 2018 - Rev. 9 1 Publication Order Number: MBRA340T3/D MBRA340, NRVBA340, SBRA340T3G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100C) IO A 3.0 Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 100 Storage/Operating Case Temperature Tstg, TC -55 to +150 C TJ -55 to +150 C Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25C) dv/dt V/ms 10,000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL RJA 15 81 C/W Thermal Resistance - Junction-to-Lead (Note 2) Thermal Resistance - Junction-to-Ambient (Note 2) 2. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Characteristic Value VF Maximum Instantaneous Forward Voltage (Note 3) TJ = 25C TJ = 100C 0.450 0.390 TJ = 25C TJ = 100C 0.3 15 (IF = 3.0 A) Maximum Instantaneous Reverse Current IR Unit (VR = 40 V) Volts mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 1 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125C 0.1 0.10 TJ = 100C 0.20 TJ = 25C 0.30 0.40 TJ = -55C 0.50 1 0.1 0.10 0.60 TJ = 125C TJ = 100C TJ = -55C TJ = 25C 0.20 0.30 0.40 0.50 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 0.60 IR, MAXIMUM REVERSE CURRENT (AMPS) MBRA340, NRVBA340, SBRA340T3G IR, REVERSE CURRENT (AMPS) 100E-3 100E-3 TJ = 125C 10E-3 1E-3 TJ = 100C 100E-6 10E-6 TJ = 25C 1E-6 TJ = 125C 10E-3 TJ = 100C 1E-3 TJ = 25C 100E-6 100E-9 TJ = -55C 10E-9 1E-9 100E-12 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) TJ = -55C 10E-6 40 1E-6 0 5 4.5 dc freq = 20 kHz 4 3.5 3 SQUARE WAVE Ipk/IO = p 2.5 2 1.5 Ipk/IO = 5 Ipk/IO = 10 1 0.5 0 25 50 75 100 125 150 TL, LEAD TEMPERATURE (C) 1.8 1.6 SQUARE WAVE 1.4 dc 1.2 1.0 0.8 Ipk/IO = p 0.6 Ipk/IO = 5 0.4 Ipk/IO = 10 0.2 0 Ipk/IO = 20 0 TJ, DERATED OPERATING TEMPERATURE (C) TJ = 25 C 0 5 1 1.5 2 2.5 3 3.5 4 4.5 5 Figure 6. Forward Power Dissipation C, CAPACITANCE (pF) 100 0.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating 1000 40 Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 40 125 RqJA = 22 C/W 115 RqJA = 43 C/W 105 95 RqJA = 63 C/W 85 RqJA = 81 C/W 75 RqJA = 96 C/W 65 55 0 Figure 7. Capacitance 5 35 10 15 20 25 30 VR, DC REVERSE VOLTAGE (VOLTS) Figure 8. Typical Operating Temperature Derating www.onsemi.com 3 40 R(t), TRANSIENT THERMAL RESISTANCE (C/W) MBRA340, NRVBA340, SBRA340T3G 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (C/W) Figure 9. Thermal Response, Junction-to-Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.1 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 10. Thermal Response, Junction to Ambient (1 inch pad) www.onsemi.com 4 MBRA340, NRVBA340, SBRA340T3G PACKAGE DIMENSIONS SMA CASE 403D ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.000 0.157 2.000 0.079 2.000 0.079 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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