VS-SD300C..C Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 650 A FEATURES * Wide current range * High voltage ratings up to 3200 V * High surge current capabilities * Diffused junction * Hockey PUK version * Case style A-PUK (DO-200AA) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 A-PUK (DO-200AA) TYPICAL APPLICATIONS * Converters PRIMARY CHARACTERISTICS * Power supplies IF(AV) 650 A Package A-PUK (DO-200AA) Circuit configuration Single * Machine tool controls * High power drives * Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) SD300C..C 25 to 32 650 540 A 55 55 C 1150 995 A 25 25 C 50 Hz 6050 6050 60 Hz 6335 6335 50 Hz 183 183 60 Hz 167 167 Range 400 to 2000 2500 to 3200 V -40 to +180 -40 to +150 C Ths IF(RMS) Ths IFSM I2t VRRM UNITS 04 to 20 TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD300C..C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 28 2800 2900 32 3200 3300 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 Revision: 11-Jan-18 Document Number: 93544 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature Maximum RMS forward current 995 6050 I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied A 55 (85) 6050 t = 10 ms Maximum I2t for fusing 55 (85) 1150 t = 10 ms UNITS 650 (380) 540 (250) t = 10 ms t = 8.3 ms I2t 25 to 32 25 C heatsink temperature double side cooled t = 8.3 ms IFSM Maximum I2t for fusing 04 to 20 180 conduction, half sine wave Double side (single side) cooled IF(AV) IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current SD300C..C TEST CONDITIONS 6335 6335 5090 5090 5330 5330 183 183 167 167 129 129 118 118 1830 1830 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.95 0.95 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.00 1.00 Low level values of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.75 0.75 High level values of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.72 0.72 VFM Ipk = 1500 A, TJ = TJ maximum; tp = 10 ms sinusoidal wave 2.08 2.08 C A kA2s kA2s V mW Maximum forward voltage drop V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SD300C..C TEST CONDITIONS 04 to 20 25 to 32 TJ -40 to 180 -40 to 150 TStg -55 to 200 RthJ-hs DC operation single side cooled 0.163 DC operation double side cooled 0.073 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet UNITS C K/W 4900 (500) N (kg) 70 g A-PUK (DO-200AA) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.017 0.017 0.011 0.012 120 0.020 0.020 0.020 0.020 90 0.025 0.025 0.027 0.027 60 0.036 0.036 0.038 0.038 30 0.064 0.062 0.065 0.062 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93544 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series www.vishay.com SD 3 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V ) (S in g le Sid e C o o le d ) R th J-hs (D C ) = 0 .1 6 3 K /W 160 140 120 C o nduc tio n A ng le 100 3 0 80 60 90 120 60 1 80 40 0 5 0 1 0 0 1 5 0 20 0 25 0 3 00 35 0 4 0 0 4 50 M a x im u m A llo w a b le H e a t sin k T em p e ra t u re ( C ) 1 80 180 M a xim u m A llo w a ble H e a ts in k T e m p e r a tu re (C ) Vishay Semiconductors S D 3 0 0 C ..C S e r ie s (4 0 0 V t o 2 0 0 0 V ) (D o u b le S id e C o o le d ) R thJ-h s (D C ) = 0 .0 7 3 K /W 1 60 1 40 1 20 Co n duc tio n Pe rio d 1 00 80 30 60 60 90 120 40 DC 20 0 20 0 40 0 6 00 8 00 1 00 0 1 20 0 A v e ra g e F o rw a rd C u rr e n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 18 0 150 SD 3 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V ) ( Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 6 3 K / W 16 0 14 0 12 0 C o ndu ctio n Pe riod 10 0 80 60 30 60 90 40 1 2 0 1 8 0 20 0 100 200 3 00 40 0 DC 500 60 0 70 0 Maxim um Allowable Heatsink Tem perature (C) M a xim u m A llo w a b le H e a tsin k T e m p e r a tu re (C ) A v e ra g e F o r w a rd C u rre n t (A ) SD 300C..C Series (2500V to 3200V) (Single Side Cooled ) R thJ- hs (DC) = 0.163 K/W 140 130 120 110 100 Co n duc tio n A ng le 90 80 30 60 70 90 60 120 180 50 40 0 A v e ra g e F o rw a rd C urr e n t (A ) 50 100 150 200 250 300 350 400 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics 180 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD 300C..C Series (400V to 2000V ) (Double Side Cooled) R thJ-h s (DC) = 0.073 K/W 160 140 120 100 Co n duc tio n An g le 80 30 60 90 60 120 180 40 20 0 200 400 600 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics 800 Maxim um Allowable Heatsink Tem perature (C) Maximum Allowable Heatsink Temperature (C) 180 SD300C..C Series (2500V to 3200V ) ( Single Side Cooled) Rth J-hs (DC) = 0.163 K/W C o nd uct io n P erio d 90 30 0 100 60 200 120 300 180 DC 400 500 600 Average Forward Current (A) Fig. 6 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93544 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series Vishay Semiconductors 25 0 0 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD300C..C Series (2500V to 3200V) (Double Side Cooled) Rth J-h s (DC) = 0.073 K/W C o nduc tio n A ng le 30 60 90 120 180 0 100 200 300 400 500 600 M a x im um A v e ra g e F o rw a rd Po w e r Lo ss (W ) Maximum Allow able Heatsin k Tem perature (C) www.vishay.com DC 1 8 0 1 2 0 90 60 30 20 0 0 15 0 0 R M S Lim it 10 0 0 C o nduc tio n Pe rio d 500 S D 3 0 0 C ..C S e r ie s TJ = TJ m a x . 0 0 700 200 Average Forward Current ( A) 60 0 0 SD 3 0 0 C ..C S e rie s (2 5 0 0 V t o 3 2 0 0 V ) (D o u b le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K / W C o ndu ct io n Pe rio d 30 60 9 0 120 1 8 0 DC 0 20 0 400 60 0 800 1 0 00 Fig. 8 - Current Ratings Characteristics 1200 RMS Lim it 1000 800 600 C o nd uctio n A ng le 400 SD300C..C Series TJ = TJ m ax. 200 0 0 200 400 600 1 20 0 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 S D 3 0 0 C ..C S e rie s 15 0 0 10 100 Fig. 11 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 800 Average Forward Curren t (A) Fig. 9 - Forward Power Loss Characteristics P e a k H a lf Sin e W a v e Fo rw a rd C urr e n t (A ) M aximum Average Forward Power L oss (W) 50 0 0 7000 1400 1 0 00 A t A n y R a te d Lo a d C o n d it io n A n d W ith R a t e d V RR MA p p lie d Fo llo w in g Su rg e . In it ia l TJ = TJ m a x. @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 55 0 0 1 1800 180 120 90 60 30 8 00 N um be r O f E qual A m plitud e Half C y cle Cu rren t Pulse s (N ) A v e ra g e F o rw a rd C u rre n t (A ) 1600 600 Fig. 10 - Forward Power Loss Characteristics P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A ) M a x im um A llo w a b le H e a t sin k T e m p e ra tu re (C ) Fig. 7 - Current Ratings Characteristics 150 140 130 120 110 100 90 80 70 60 50 40 30 20 40 0 A v e ra g e F o rw a rd C u rre n t (A ) 6000 5000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P u lse T ra in D ura t io n . In it ia l TJ = TJ m a x . N o V o lt a g e R e a pp lie d R a t e d V RRMR e a p p lie d 4000 3000 2000 SD 3 0 0 C ..C S e rie s 1000 0.01 0.1 1 P u lse T ra in D u ra t io n (s) Fig. 12 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Revision: 11-Jan-18 Document Number: 93544 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series www.vishay.com Vishay Semiconductors In stant aneous Forward Current (A) 10000 TJ = 25C TJ = TJ m ax. 1000 SD300C..C Series 100 0.5 1 1.5 2 2.5 3 3. 5 4 4.5 5 Instantaneous Forwa rd V oltag e (V) Fig. 13 - Forward Voltage Drop Characteristics Tra n sie n t T h e rm a l Im p e d a n c e Z th J-hs (K / W ) 1 St e a d y St at e V a lue R thJ-hs = 0 .1 6 3 K /W ( Sing le Sid e C o o le d ) 0 .1 R thJ-hs = 0 .0 7 3 K /W ( D o u ble Sid e C o o le d ) ( D C O p e ra t io n ) 0 .0 1 SD 3 0 0 C ..C Se rie s 0 .0 0 1 0.0 01 0 .01 0. 1 1 10 Sq u a re W a v e Pu lse D u rat io n ( s) Fig. 14 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- SD 30 0 C 32 C 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (DO-200AA) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95248 Revision: 11-Jan-18 Document Number: 93544 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-200AA 42 (1.65) DIA. MAX. DIMENSIONS in millimeters (inches) 3.5 (0.14) 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 25.27 (0.99) DIA. MAX. 2 places 0.3 (0.01) MIN. both ends C 14 (0.55) MAX. A 34.42 (1.36) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-SD300C25C VS-SD300C30C VS-SD300C04C VS-SD300C08C VS-SD300C16C VS-SD300C20C VSSD300C28C VS-SD300C32C VS-SD300C12C