SEMICONDUCTOR sone TECHNICAL DATA 2N3821. 2N3822 2N3823 N-Channel, Depletion Mode Junction Field-Effect Transistors (JFETs) _ designed for small-signal, low-noise amplifier applications. MAXIMUM RATINGS 2N3821 Rating Symbol 2N3822 2N3823 Unit Drain-Gate Voltage Voc 50 30 Vde Orain-Source Voltage Vos 50 30 Vde Reverse Gate-Source Voitage VGsA -50 30 Vde Gate Current IGF 10 mAde Device Dissipation Pr 300 mW Derate above 25C 7 mwrc CASE 20-03 TO-206AF (TO-72) Storage Temperature Ranga Tsig -65 10 200 6 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max | Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage ViBR)GSSR Vde (Iq = -1.0 pAde, Vpg = 0) 2N821, 2N3822 $0 - 2N3823 30 _ Gate Reverse Current 'Gssr (V@g = -30 Vde, Vpg = 0) 2N3821. 2N3822 = 0.4 nAde (V@g = ~20 Vde, Vpg = 0} 2N3823 ~ 0.5 nAde (Vgg = ~30 Vde, Vpg = 0. Ta = 150C) 2N3821, 2N3822 _ se wAdc (Vqg = -20 Vdc. Vg = 0, Ta = 150C) 2N3823 ~ wade Gate-Source Cutot Voltage VGSiott) Vde (Vpg = 15 Vde, Ip = 0.5 nAdc) 2N3821 = ~4.0 2N3822 = -6.0 2N3823 = -8.0 Gate-Source Voltage Vgs Voc (Vpg = 18 Vde. Ip = 50 wAde) 2Ng821 O05 2.0 (Vpg = 15 Vde. Ip = 200 Adc) 2Na822 4 3 3 (Vg = 15 Vac. Ip = 400 wade) 2N9823 : insulation Resistance Case-to-Gate Riso 1919 - ohms tcontinued) 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit ON CHARACTERISTICS Zero-Gate- Voltage Drain Current(!) 2N3821 Ipss 05 25 mAdc (Vpg = 15 Vde, Vag = 0) 2N3822 2.0 10 2N3823 4.0 20 SMALL-SIGNAL CHARACTERISTICS Forward Transter Admittance(1) Yfsl mhos (Vpg = 15 Vds, Vag = 0, f = 1.0 kHz) 2N3821 1500 4500 2N3822 3000 6500 2N39823 3500 6500 (Vpg = 15 Vde, Vgg = 0) {f = 100 MHz) 2N3821 1500 ad (t = 100 MHz} 2N3822 3000 a (f = 200 MHz) 2N3823 3200 (Vg = 15 Vde, Vag = 0. f = 1.0 kHz, Ta = -85C)(1) 2Ng821 - e750) 2N3822, 2N3823 7 9750 Output Admittance 2N3821 lYosl a 10 ymhos (Vpg = 15 Vde, Vgg = 0, f = 1.0 kHz) 2N3822 = 20 2N3823 a 35 Input Capacitance (Vpsg = 15 Vdc, Vgge 0, f= 0.1 to 1.0 MHz) Ciss - 6.0 PF Reverse Transfer Capacitance 2N3821, 2N3822 Crss a 3.0 PF (Vpg = 15 Vdc, Vq@g= 0, f = 0.1 to 1.0 MHz} 2Na823 = 20 Noise Figure NF dB (Vos = 15 Vde, Vag = 0) {f= 10 Hz, Rg = 1.0 MQ) 2N3821, 2N3822 7_ ae (f= 1.0 KHz, Rg = 1.0 MQ) All Types ~ (See Figure 7) input Conductance Sis _ 800 ps (Vps = 15 Vde, V@ge 0, f = 200 MHz) 2N3823 Only Output Conductance 90s _ 2c Hs (Vpg = 15 Vde, Vag 0, f = 200 MHz) 2N3823 Only ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 175C, Vpg = 0, V@g = -40 Vde 2N3821, 2N3822, -24 Vde 2N3823 Initiat and End Point Limits Characteriatics Tested Symbol Min Max Unit Gate Reverse Current lassr _ -0.1 nAdc (Vg = 30 Vdc, Vpg = 0) Zero-Gate Voltage Drain Current(") 2Na821 ipss 05 2.5 mAdc (Vpg = -15 Vde, Vag = 0) 2N3822 2.0 10 Forward Transter Admittance 2N3821 lYesl 1500 4500 umhos (Vpg = 15 Vdc, Vgg = 0. f = 1.0 kHz) 2NG822 3000 6500 Delta from Pre-Gurn-tn Measured Values Min Max Delta Zero-Gate-Voitage Drain Current(1) slpss _ +10 % af Initial Value Delta Forward Transfer Admittance AlYtel a +20 % ot Initial Value (1) Pulsed. Putse Width 250 to 350 ys, Duty Cycle 1010 2 0% CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779