Features m@ 4 Low Power CMOS 512K x 8 SRAMs in one MCM m@ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 @ Input and Output TTL & CMOS Compatible Design @ Fast 17,20,25,35,45,55nS Access Times mg Full Commercial and Industrial (-55C to +125C) Temperature Range m@ +5 V Power Supply @ Available in two Surface Mount Packages, and one PGA Type Package e@ 68Lead, Low Profile CQFP(F1), 1.56"SQ x .140"max e@ 68Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max (18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) e@ 66-Lead, PGA-Type(P1), 1.38"SQ x .245"max g Internal Decoupling Capacitors m@ DESC SMD# 5962-94611 Released(P1,F2) 5962-95624 Released(F1) (\EROFLEX CIRCUIT TECHNOLOGY Block Diagram PGA Type Package(P1) & CQFP(F2) Pin Description WE1 CE1WE2 CE2 WE3s CE3 WE4 CE4|1/o0.-31 Data I/O Ao-A18 Ao18 | Address Inputs I I T WE14] Write Enables CE1-4| Chip Enables 512Kx8| |512Kx8] | 512Kx8] | 512Kx8 OE | Output Enable Power Supply Ground fot ois 100-7 08-15 1/016-23 024-31] NC | Not Connected Block Diagram CQFP(F1) Pin Description CE1 CE2 CE3 CE4 |1/O0-31 Data I/O WE OE Ao18 | Address Inputs Ao A18 T l WE Write Enable CE14| Chip Enables 512Kx8 512Kx8 512Kx8 512Kx8 OE Output Enable Vec Power Supply } +} } GND Ground 1/00-7 VO8-15 016-23 VO2a-31 L_NC_| Not Connected General Description The ACT-S512K32 is a High Speed, 16 megabit CMOS SRAM Multichip Module (MCM) designed for full temperature range industrial, military, or space, mass memory and fast cache applications. The MCM can be organized as a 512K x 32 bit, 1M x 16 bit or 2M x 8 bit device and is input and output TIL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low. Reading is accomplished when WE is high and and output enable (OE) are both low. Access time grades of 17nS (-40C to +85C), 20nS, 25nS, 35nS, 45nS and 55nS maximum are standard high speed versions. The +5 Volt power supply version is standard and +3.3 Volt lower power model is a future optional product. The products are designed for operation over the temperature range of -55C to +125C and under the _ full military environment. DESC Standard Military Drawing (SMD) numbers are released. The ACT-S512K32 is manufactured in Aeroflexs 80,000 square foot MIL-PRF-38534 certified facility in Plainview, N.Y. A\eroflex Circuit Technology - Advanced Multichip Modules 1/14/97Absolute Maximum Ratings Symbol Rating Range Units Ta Operating Temperature Dash #017 A to +88 < Dash # -020 to -055] -55to +125) C Tstq | Storage Temperature -65 to +150 C Pp Maximum Package Power Dissipation 3.0 W Oryc Hottest Die, Max Thermal Resistance - Junction to Case 5 C/W Ve Maximum Signal Voltage to Ground -0.5 to +7 Vv TL Maximum Lead Temperature (10 seconds) 300 C Normal Operating Conditions Symbol Parameter Minimum Maximum Units Voc Power Supply Voltage +4.5 +5.5 V Vin Input High Voltage +2.2 Veco + 0.3 V Vit Input Low Voltage -0.5 +0.8 V Capacitance (Vin/Vout = OV, f= 1MHz, Ta = 25C) Symbol | Parameter Maximum Units Cao | Ao-AisCapacitance 50 pF Coe | OE Capacitance 50 pF Write Enable Capacitance Cwe | CQFP(F1) Package 50 pF PGA(P1) and CQFP(F2) Packages 20 pF Cce | Chip Enable Capacitance 20 pF Cio | I/Oo- 1/031 Capacitance 20 pF This parameter is guaranteed by design but not tested DC Characteristics (Vcc = 5.0V, Vss= OV, TA= -55C to +125C; -017 version TA= -40C to +85C) Parameter Sym Conditions We ta Units Input Leakage Current lt | Veco = +5.5V, Vin = 0 or Voc 10 HA Output Leakage Current lo | CE = Viy, OE = Vin, Vout = 0 to Voc 10 HA Operating Supply Current 32 Bit Mode lec1X32 CE = V), OE = Vin, Vec= +5.5V 400 mA f = 5 MHz CMOS Compatible Standby Current loot CE = Vec, OE = Vin, Veo = +5.5V 80 mA f = 5 MHz CMOS Compatible Operating Supply Current 32 Bit Mode lecox32 CE = V,, OE = Vin, Voc = +5.5V 750 mA f = 50 MHz TTL Compatible Standby Current lope CE = Voc, OE = Vin, Voc = +5.5V 240 mA f = 50 MHz TTL Compatible Output Low Voltage Vor | lop =8 MA, Voc = +4.5V 0.4 V Output High Voltage Vou | low = -4.0 mA, Voc = +4.5V 2.4 V Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700AC Characteristics (Vcc = 5.0V, Vss= OV, Ta= -55C to +125C) Read Cycle Parameter Sym 017 =020 =025 =035 =045 Units Min Max | Min Max | Min Max} Min Max] Min Max Read Cycle Time tac 17 20 25 35 45 ns Address Access Time tan 17 20 25 35 45 ns Chip Enable Access Time tacs 17 20 25 35 45 ns Output Hold from Address Change tou 4 4 5 5 5 ns Output Enable to Output Valid log 9 10 12 25 35 ns Chip Enable to Output in Low 2 * teLz 3 3 3 3 3 ns Output Enable to Output in Low Z * toLz 0 0 0 0 0 ns Chip Deselect to Output in High Z * tenz 10 15 15 ns Output Disable to Output in High 2 * touz 8 8 10 15 15 ns * Parameters guaranteed by design but not tested Write Cycle Parameter Sym viz =020 025 2038 045 Units Min Max] Min Max|Min Max|Min Max|Min Max Write Cycle Time twe 17 20 25 35 45 ns Chip Enable to End of Write tow 15 15 20 30 35 ns Address Valid to End of Write taw 15 15 20 30 35 ns Data Valid to End of Write tow 12 12 15 20 30 ns Write Pulse Width twe 13 13 15 25 35 ns Address Setup Time tas 0 0 0 ns Output Active from End of Write * tow 0 0 0 ns Write to Output in High Z * twuz 8 11 13 15 15 ns Data Hold from Write Time tou 0 0 ns Address Hold Time tan 0 ns * Parameters guaranteed by design but not tested Data Retention Electrical Characteristics (Special Order Only) (TA = -55C to +125C) Parameter Sym Test Conditions . All Speeds Units Min Max Voc for Data Retention | VprR | CE 2Vec 0.2V 2 5.5 V Data Retention Current | Iccpr1 | Voc = 3V 8.5 mA Truth Table Mode CE OE WE Data I/O Power Standby H xX xX High Z Standby (deselect/power down) Read L L H Data Out Active Read L H H High Z Active (deselected) Write L X L Data In Active Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700Timing Diagrams Read Cycle Timing Diagrams Read Cycle 1 (CE = OE = VIL, WE = Vin) Write Cycle Timing Diagrams Write Cycle 1 (WE Controlled, OE = VIL) be tac Ao-18 *K P< taa Duo Previous Data Valid Data Valid Read Cycle 2 (WE = Vin) >! Ao-18 a CE OE > SEE NOTE SEE NOTE Duo High Z : Data Valid UNDEFINED | | DONT CARE two Duo twuz SEE NOTE twc Data Valid tbw > Write Cycle 2 (CE Controlled, OE = VIH ) iN Ao-rs Dio <a. tay, ____ twe- >| b< tow} 1DH Data Valid Note: Guaranteed by design, but not tested. AC Test Circuit Current Source | Io To Device Under Test CL= 50 pF Vz ~ 1.5 V (Bipolar Supply) I lou Current Source Notes: Parameter Typical Units Input Pulse Level 0-3.0 Vv Input Rise and Fall 5 ns Input and Output Timing Reference 15 Vv Level Output Lead Capacitance 50 pF Vec 45-55 Vv GND Ground NC Not Connected 1) VZis programmable from -2V to +7V. 2) lOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance ZO = 75Q. 4) VZis typically the midpoint of VOH and Vot. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance. Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700Pin Numbers & Functions All dimensions in inches a f Pin 66 4 155 145 66 Pins PGA-Type Pin # Function Pin # Function Pin # Function Pin # Function 1 \/O8 18 A12 85 1/025 52 WE3 /O9 19 Vcc 86 1/026 53 CS3 3 1/010 20 Csi 37 A6 54 GND 4 Ai3 21 NC 38 A7 55 1/019 5 Ai4 22 1/03 39 NC 56 1/031 6 A15 23 1/015 40 A8 57 1/030 7 A16 24 1/014 41 AQ 58 1/029 8 A17 25 1/013 42 1/016 59 1/028 9 1/00 26 1/012 43 1/017 60 Ao 10 O41 27 OE 44 1/018 61 At 11 \/O2 28 Ai8 45 Vec 62 A2 12 WE2 29 WE1 46 CS4 63 1/023 13 CS2 80 \/O7 47 WEa4 64 \/O22 14 GND 31 1/06 48 1/027 65 \/O21 15 1/011 32 1/05 49 A3 66 1/020 16 A10 33 1/04 50 A4 17 A141 34 1/024 51 A5 Package Outline PGA-Type "P1" Bottom View _ 245 MAX 1.385 SQ 08 +.015 ; _ 955 1.000 135 . . 12 .600 Va Pin 1 7 F . POKOKO) @or Pin 6 7 O @O O O O 1.1340 +eooo+e@ee 1.000 , O O O O 020 O O [ .016 (OROKO) O 1 BO) @@ Pin 11 $] fe Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700Pin Numbers & Functions All dimensions in inches Le IFPRI REERH RPA CAE 2 (16 at .050 4 sides) 4 68 Pins CQFP Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 35 OE 52 GND csi 19 1/O8 36 CS4 53 1/023 3 A5 20 /O9 37 A17 54 1/022 4 A4 21 /O10 38 A18 55 O21 5 A3 22 O11 39 NC 56 1/020 6 A2 23 O12 40 NC 57 O19 7 Ad 24 1/013 41 NC 58 1/018 8 Ao 25 O14 42 NC 59 1/017 9 NC 26 1/015 43 NC 60 1/016 10 1/00 2/7 Vcc 44 1/031 61 Vcc 11 O14 28 Ait 45 1/030 62 Aio 12 1/02 29 A12 46 1/029 63 Ag 13 1/03 30 A13 47 1/028 64 As 14 04 31 Ai4 48 1/027 65 A7 15 /O5 32 A15 49 1/026 66 A6 16 1/06 33 A16 50 1/025 67 WE 17 1/07 34 CS2 51 1/024 68 CS3 Package Outline CQFP "F1" | |}.140 MAX | 1.575 SQ 1.50 MAX (4 Sides) # }+.050 +.005 _>f+.. 010 Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700Pin Numbers & Functions 68 Pins Dual-Cavity CQFP Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 85 OE 52 GND CEs 19 \/O8 86 CE2 53 1/023 3 A5 20 \/O9 37 A1i7 54 1/022 4 A4 21 \/O10 38 WE2 55 O21 5 A3 22 O11 89 WE3 56 1/020 3) A2 23 1/012 40 WE4 57 1/019 7 At 24 1/013 41 A1i8 58 1/018 8 Ao 25 1/014 42 NC 59 \/O17 9 NC 26 1/015 43 NC 60 \/O16 10 \/Oo a7 Vec 44 1/031 61 Vcc 11 1/01 28 Att 45 1/030 62 A1i0 12 \/O2 29 Ai2 46 1/029 63 AQ 13 1/03 30 A1i3 47 1/028 64 A8 14 1/04 31 Ai4 48 \/027 65 A7 15 1/05 32 A15 49 1/026 66 A6 16 1/06 83 Ai6 50 1/025 67 WET 17 \/O7 34 CE1 51 \/O24 68 CE4 Package Outline Dual-Cavity CQFP "F2" Top View 0.990 SQ +.010 \~________. 0.880 SQ y Ping 4.010 Pin 61>, 1-10.20 MAX o . 0.010 REF ein roy ATLL = f- | yPin 60 ~ J) a - 0.015 a rt +.002 a i fF a 0.946 +.010 a co 3 -3 a 0.010 +.005 f __ 0.050 | oo co I + TYP a] * . . + Lo Detail A Pin oe!" Up 44 ts ro a6 TUOUUOUUOUOUOUR Prt in |+ 0.800 REF] in tse See Detail A *0.180 MAX available, call factory for details All dimensions in inches Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700oY LUC ALL fev i LING biped TV rt A ee Ordering Information Model Number DESC Part Number Speed Package ACT-S512K32N-017F1Q 5962-95624 1 OHXX(Pending) 17nS 1.56"sq CQFP ACT-S512K32N-020F1Q 5962-9562409HYC 20nS 1.56"sq CQFP ACT-S512K32N-025F1Q 5962-9562408HYC 25nS 1.56"sq CQFP ACT-S512K32N-034F1Q 5962-9562407HYC 35nS 1.56"sq CQFP ACT-S512K32N-045F1Q 5962-9562406HYC 45nS 1.56"sq CQFP ACT-S512K32N-055F1Q 5962-9562405HYC 55nS 1.56"sq CQFP ACT-S512K32N-017F2Q 5962-9461 110HMC(Pending) 17nS .88"sq CQFP ACT-S512K32N-020F2Q 5962-9461 109HMC 20nS .88"sq CQFP ACT-S512K32N-025F2Q 5962-9461 108HMC 25nS .88"sq CQFP ACT-S512K32N-035F2Q 5962-9461 107HMC 35nS .88"sq CQFP ACT-S512K32N-045F2Q 5962-9461 106HMC 45nS .88"sq CQFP ACT-S512K32N-055F2Q 5962-9461 105HMC 55nS .88"sq CQFP ACT-S512K32N-017P1Q 5962-9461 110HXC(Pending) 17nS 1.38"sq PGA-Type ACT-S512K32N-020P1Q 5962-9461 109HXC 20nS 1.38"sq PGA-Type ACT-S512K32N025P1Q 5962-9461 108HXC 25nS 1.38"sq PGA-Type ACT-S512K32N035P1Q 5962-9461 107HXC 35nS 1.38"sq PGA-Type ACT-S512K32N045P1Q 5962-9461 106HXC 45nS 1.38"sq PGA-Type ACT-S512K32N055P1Q 5962-9461 105HXC 55nS 1.38"sq PGA-Type Model Number Breakdown ACT- s 512K 32 N- 020 F1 M Aeroflex Circuit _ | T TT Technology Memory Type Screening S = SRAM F = FLASH EEPROM C = Commercial Temp, 0C to +70C, No 883 Screening E = EEPROM | = Industrial Temp, -40C to +85C, No 883 Screening D = Dynamic RAM T = Military Temp, -55C to +125C, No 883 Screening M = Military Temp, -55C to +125C, 883 Screening Memory Depth, Bits Memory Width, Bits Pinout Options N=X Memory Speed, ns Specification subject to change without notice Q = MIL-STD-883 Compliant Package Type & Size Surface Mount Packages F1 = 1.56"SQ 68 Pin CQFP F2 = .88"SQ 68 Pin Dual-Cavity CQFP Thru-Hole Packages P1 = 1.385"SQ PGA 66 Pins Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553 Aeroflex Circuit Technology $512K32-B 1/14/97 Plainview NY (516) 694-6700