Discrete POWER & Signal
Technologies
N
Sourced from Process D3.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Symbol Parameter Value Units
WIV Wor king Inverse Voltage 75 V
IOAverage Rectified Current 200 mA
IFDC Forward Curre nt 300 mA
ifRecurrent Peak Forward Current 400 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
4.0 A
A
Tstg Storage Temperature Range -65 to +200 °C
TJOperating Junction Temperature 175 °C
Symbol Characteristic Max Units
1N / FD LL 914/A/B / 4 148 / 4448
PDTo ta l De vice Dissip at i on
Derate above 25°C500
3.33 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
COLOR BAND MARKI NG
DEVICE 1ST BAND 2ND BAND
FDLL914 BLACK BROWN
FDLL914A BLACK GRAY
FDLL914B BROWN BLACK
FDLL916 BLACK RED
FDLL916A BLACK WHITE
FDLL916B BROWN BROWN
FDLL4148 BLACK BROWN
FDLL4448 BROWN BLACK
High Conductance Fast Diode
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Condition s Min Max Un its
BVBr eakdo w n Volt age IR = 1 00 µA
IR = 5.0 µA100
75 V
V
IRReverse Current VR = 20 V
VR = 20 V, TA = 150°C
VR = 75 V
25
50
5.0
nA
µA
µA
VFForward Voltage 1N 914B / 4 448
1N916B
1N 914 / 9 16 / 4148
1N 914A / 9 16A
1N916B
1N 914B / 4 448
IF = 5.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 2 0 mA
IF = 3 0 mA
IF = 1 00 m A
620
630 720
730
1.0
1.0
1.0
1.0
mV
mV
V
V
V
V
CODiode Capacitance 1N 916/ A / B / 4448
1N 914/ A / B / 4148 VR = 0, f = 1.0 MHz
VR = 0, f = 1.0 MHz 2.0
4.0 pF
pF
TRR Reverse Recovery Time IF = 10 mA, VR = 6 .0 V (60 mA),
Irr = 1. 0 m A, RL = 100 Ω4.0 nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
110
120
130
140
150
160
I - REVERSE CURRENT (uA)
V - REVERSE VOLTA GE (V)
R
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
GENERA L RUL E: T he Reverse Current of a d iode will approxima tely
double for every ten (10) Degree C increase in Temperature
10 20 30 50 70 100
0
20
40
60
80
100
120
V - R EVER SE VOLTA G E ( V)
I - REVERSE CURRENT (nA)
R
R
T a= 25°C
FORWARD V OLTAGE vs FORWARD CURRENT
VF - 1 to 10 0 uA
1 2 3 5 10 20 30 50 100
250
300
350
400
450
500
550
I - FORWARD CURRENT (uA)
V - FORW ARD VOLT AGE (mV)
F
F
T a= 25°C
FORWARD VOL T AGE vs FORWARD CURRENT
VF - 0.1 to 100 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
750
I - FORWARD CURREN T (mA)
V - F ORWARD VO LTAG E (mV)
F
F
T a= 25°C
VR
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)
Typical Characteristics (continued)
Ave rage Rectifie d Cur rent (Io) &
Forwar d C urre nt (I ) v ersus
Ambient Te m perature (T )
050100150
0
100
200
300
400
500
T - AM BIENT T EM PERAT URE ( C)
I - CURRENT (mA)
A
A
I - FORWARD CURRENT STEADY STATE - mA
o
R
F
Io - AVERAGE RECTIFIED CURRENT - mA
FORWARD VOL T AGE vs FORWARD CURRENT
VF - 1 0 to 800 mA
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
1.6
I - FORWARD CURREN T (mA)
V - F ORWARD VO LTAG E (V )
F
F
T a= 25°C
VF - 0.01 - 20 mA (-40 to +65 Deg C)
F ORWAR D VO LTAGE vs
AM BIENT TEMP ERATURE
0.01 0.03 0.1 0.3 1 3 10
300
400
500
600
700
800
900
I - FORWARD CURREN T (mA)
V - F ORWARD VO LTAG E (mV)
F
F
Typical
T a= -40°C
Ta= +25 ° C
Ta= +65 ° C
CAPACITANC E vs REVER SE V OLTA GE
VR = 0.0 to 15 V
02468101214
0.75
0.8
0.85
0.9
REVERSE VOLTAGE (V)
CAPACITANCE (p F )
Ta= 25°C
REVERSE RECOVERY TIME vs
REVERSE CURRENT
I F = 1 0 mA - IR R = 1 .0 mA - Rloop = 100 Ohms
10 20 30 40 50 60
1
1.5
2
2.5
3
3.5
4
RE VERS E CURREN T (mA)
RE VERS E RE CO VERY (nS)
Ta= 25°C
POWER DERATING CURVE
0 50 100 150 200
0
100
200
300
400
500
I - AVERAGE TEM PE RATURE ( C)
P - POWER DISS IPATI O N (mW)
O
D
o
DO-35
SOT-23
VF
PD
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)
