Discrete POWER & Signal
Technologies
N
Sourced from Process D3.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Symbol Parameter Value Units
WIV Wor king Inverse Voltage 75 V
IOAverage Rectified Current 200 mA
IFDC Forward Curre nt 300 mA
ifRecurrent Peak Forward Current 400 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
4.0 A
A
Tstg Storage Temperature Range -65 to +200 °C
TJOperating Junction Temperature 175 °C
Symbol Characteristic Max Units
1N / FD LL 914/A/B / 4 148 / 4448
PDTo ta l De vice Dissip at i on
Derate above 25°C500
3.33 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
COLOR BAND MARKI NG
DEVICE 1ST BAND 2ND BAND
FDLL914 BLACK BROWN
FDLL914A BLACK GRAY
FDLL914B BROWN BLACK
FDLL916 BLACK RED
FDLL916A BLACK WHITE
FDLL916B BROWN BROWN
FDLL4148 BLACK BROWN
FDLL4448 BROWN BLACK
High Conductance Fast Diode
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35