1N4149 HIGH SPEED SWITCHING DIODE
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL VALUE UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Reverse Voltage VR75 V
Maximum Average Forward Current IF(AV) 150 1) mA
Maximum Surge Forward Current at t < 1s and Tj = 25°CIFSM 500 mA
Maximum Power Dissipation , Ta = 25 °CPDmW
Maximum Forward Voltage at IF = 10 mA VF1.0 V
Maximum Reverse Current at VR = 75V IR5 nA
Maximum Reverse Recovery Time
from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω
Junction Temperature Range TJ175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
Page 1 of 2 Rev. 02 : March 25, 2005
ns
RATING
500
Trr 4
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.