A25L032 Series 32Mbit Low Voltage, Dual-I/O Serial Flash Memory with 100MHz Uniform 4KB Sectors Document Title 32Mbit, Low Voltage, Dual-I/O Serial Flash Memory with 100MHz Uniform 4KB Sectors Revision History History Issue Date 0.0 Initial issue August 18, 2008 0.1 Spec. change for new commands July 13, 2009 0.2 Add packing description in Part Numbering Scheme May 3, 2010 0.3 P31: Modify Read Device Identification July 27, 2010 0.4 P32: ID code error correction September 21, 2010 0.5 P39: Change Data Retention and Endurance value from Max. to Min. October 7, 2010 1.0 Change tPP, tSE, tBE and tCE data values May 26, 2011 1.1 P1: Add "Provide 64Bytes Security ID (application note is available Rev. No. Remark Preliminary P40: Remove the min. value of ICC1 and ICC2 Final Final version release September 19, 2011 by request)" in Features 1.2 Change tSE(typ.) from 150ms to 80ms November 15, 2011 Change tSE(max.) from 280ms to 200s Change tBE(typ,) from 0.7s to 0.5s Change tCE(typ,) from 40s to 32s Add 8-pin WSON (6*5mm) package type 1.3 P40: Change ICC6 & ICC7(max.) from 15mA to 25ma March 29, 2012 1.4 Remove SOP 16L (300mil) package type May 15, 2014 1.5 P.1: Add "AEC-Q100 Grade 3 Certification" in FEATURES December 18, 2014 P.43 & P.44: Add -E grade specification (December, 2014, Version 1.5) AMIC Technology Corp. A25L032 Series 32Mbit Low Voltage, Dual-I/O Serial Flash Memory with 100MHz Uniform 4KB Sectors FEATURES Family of Serial Flash Memories - A25L032: 32M-bit /4M-byte Flexible Sector Architecture with 4KB sectors - Sector Erase (4K-bytes) in 80ms (typical) - Block Erase (64K-bytes) in 0.5s (typical) Page Program (up to 256 Bytes) in 1.5ms (typical) 2.7 to 3.6V Single Supply Voltage Dual input / output instructions resulting in an equivalent clock frequency of 200MHz: - FAST_READ_DUAL_OUTPUT Instruction - FAST_READ_DUAL_INPUT_OUTPUT Instruction - Dual Input Fast Program (DIFP) Instruction SPI Bus Compatible Serial Interface 100MHz Clock Rate (maximum) Deep Power-down Mode 15A (Max.) Advanced Protection Features - Software and Hardware Write-Protect - Top/Bottom, 4KB Complement Array Protection Additional 64-byte user-lockable, one-time programmable (OTP) area 32Mbit Flash memory - Uniform 4-Kbyte Sectors - Uniform 64-Kbyte Blocks Electronic Signatures - JEDEC Standard Two-Byte Signature A25L032: (3016h) - RES Instruction, One-Byte, Signature, for backward compatibility A25L032: (15h) AEC-Q100 Grade 3 Certification Package options - 8-pin SOP (209mil), 8-pin DIP (300mil), or 8-pin WSON (6*5mm) - All Pb-free (Lead-free) products are RoHS compliant Provide 64Bytes Security ID (application note is available by request) GENERAL DESCRIPTION The A25L032 is 32M bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. sectors. Each sector is composed of 16 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 16,384 pages, or 4,194,304 bytes. The whole memory can be erased using the Chip Erase instruction, a block at a time, using Block Erase instruction, or a sector at a time, using the Sector Erase instruction. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 64 blocks, each containing 16 Pin Configurations SOP8 / DIP8 Connections WSON8 Connections A25L032 A25L032 S DO (IO1) W VSS (December, 2014, Version 1.5) 1 2 3 4 S DO (IO1) W VSS 8 VCC 7 HOLD 6 C 5 DI (IO0) 1 1 2 3 4 8 7 6 5 VCC HOLD C DI (IO0) AMIC Technology Corp. A25L032 Series Pin Descriptions Pin No. Pin Name I/O I Description 1 S 2 DO (IO1) 3 W 4 VSS 5 DI (IO0) 6 C I Serial Clock Input 7 HOLD I Hold Input 8 VCC I/O I Chip Select Input Data Output (Data Input Output 1)(1) Write Protect Input Ground I/O Data Input (Data Input Output 0) (1) Power Supply Notes: (1) IO0 and IO1 are used for Dual Instruction. Block Diagram HOLD W High Voltage Generator Control Logic S 64 OTP bytes C I/O Shift Register DI (IO0) DO (IO1) Address register and Counter 256 Byte Data Buffer Status Register 3FFFFF (32M) Y Decoder Size of the memory area 00000h 000FFh 256 Byte (Page Size) X Decoder (December, 2014, Version 1.5) 2 AMIC Technology Corp. A25L032 Series PIN DESCRIPTION Write Protect ( W ) The Write Protect ( W ) pin can be used to prevent the Status Register from being written. Used in conjunction with the Status Register's Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status Register Protect (SRP1, SRP0) bits, a portion or the entire memory array can be hardware protected. The Write Protect ( W ) pin is active low. Chip Select ( S ) The SPI Chip Select ( S ) pin enables and disables device operation. When Chip Select ( S ) is high the device is deselected and the Serial Data Output (DO, or IO0, IO1) pins are at high impedance. When deselected, the devices power consumption will be at standby levels unless an internal erase, program or write status register cycle is in progress. When Chip Select ( S ) is brought low the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. After power-up, Chip Select ( S ) must transition from high to low before a new instruction will be accepted. Hold ( HOLD ) The Hold ( HOLD ) pin allows the device to be paused while it is actively selected. When Hold ( HOLD ) pin is brought low, while Chip Select ( S ) pin is low, the DO pin will be at high impedance and signals on the DI and Serial Clock (C) pins will be ignored (don't care). When Hold ( HOLD ) pin is brought high, device operation can resume. The Hold function can be useful when multiple devices are sharing the same SPI signals. The Hold ( HOLD ) pin is active low. Serial Data Input, Output and IOs (DI, DO and IO0, IO1) The A25L032 support standard SPI and Dual SPI operation. Standard SPI instructions use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising edge of the Serial Clock (C) input pin. Standard SPI also uses the unidirectional DO (output) to read data or status from the device on the falling edge of Serial Clock (C). Dual SPI instructions use the bidirectional IO pins to serially write instructions, addresses or data to the device on the rising edge of Serial clock (C) and read data or status from the device on the falling edge of Serial Clock (C). (December, 2014, Version 1.5) Serial Clock (C) The SPI Serial Clock Input (C) pin provides the timing for serial input and output operations. 3 AMIC Technology Corp. A25L032 Series SPI MODES falling edge of Serial Clock (C). The difference between the two modes, as shown in Figure 1, is the clock polarity when the bus master is in Stand-by mode and not transferring data: - C remains at 0 for (CPOL=0, CPHA=0) - C remains at 1 for (CPOL=1, CPHA=1) These devices can be driven by a microcontroller with its SPI peripheral running in either of the two following modes: - CPOL=0, CPHA=0 - CPOL=1, CPHA=1 For these two modes, input data is latched in on the rising edge of Serial Clock (C), and output data is available from the Figure 1. SPI Modes Supported CPOL CPHA 0 0 C 1 1 C DI MSB DO (December, 2014, Version 1.5) MSB 4 AMIC Technology Corp. A25L032 Series SPI OPERATIONS Standard SPI Instructions To enter the Hold condition, the device must be selected, with The A25L032 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (C), Chip Select ( S ), Serial Data Input (DI), and Serial Data Output (DO). Standard SPI instructions use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of Serial Clock (C). The DO output pin is used to read data or status from the device on the falling edge of Serial Clock (C). Chip Select ( S ) Low. The Hold condition starts on the falling edge of the Hold ( HOLD ) signal, provided that this coincides with Serial Clock (C) being Low (as shown in Figure 2.). The Hold condition ends on the rising edge of the Hold ( HOLD ) signal, provided that this coincides with Serial Clock (C) being Low. If the falling edge does not coincide with Serial Clock (C) being Low, the Hold condition starts after Serial Clock (C) next goes Low. Similarly, if the rising edge does not coincide with Serial Clock (C) being Low, the Hold condition ends after Serial Clock (C) next goes Low. This is shown in Figure 2. During the Hold condition, the Serial Data Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (C) are Don't Care. Dual SPI Instructions The A25L032 supports Dual SPI operation when using the "FAST_READ_DUAL_OUTPUT and FAST_READ_DUAL_ INPUT_OUTPUT" (3B and BB hex) instructions. These instructions allow data to be transferred to or from the device at two to three times the rate of ordinary Serial Flash devices. The Dual Read instructions are ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical code directly from the SPI bus (XIP). When using Dual SPI instructions the DI and DO pins become bidirectional I/O pins; IO0 and IO1. Normally, the device is kept selected, with Chip Select ( S ) driven Low, for the whole duration of the Hold condition. This is to ensure that the state of the internal logic remains unchanged from the moment of entering the Hold condition. If Chip Select ( S ) goes High while the device is in the Hold condition, this has the effect of resetting the internal logic of the device. To restart communication with the device, it is Hold Condition The Hold ( HOLD ) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this signal Low does not terminate any Write Status Register, Program or Erase cycle necessary to drive Hold ( HOLD ) High, and then to drive Chip Select ( S ) Low. This prevents the device from going back to the Hold condition. that is currently in progress. The HOLD function is only available for standard SPI and Dual SPI operation, not during Quad SPI. Figure 2. Hold Condition Activation C HOLD Hold Condition (standard use) (December, 2014, Version 1.5) 5 Hold Condition (non-standard use) AMIC Technology Corp. A25L032 Series OPERATING FEATURES (the Release from Deep Power-down Mode and Read Electronic Signature (RES) instruction) is executed. All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as an extra software protection mechanism, when the device is not in active use, to protect the device from inadvertent Write, Program or Erase instructions. Page Programming To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal Program cycle (of duration tPP). To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory. Status Register The Status Register contains a number of status and control bits that can be read or set (as appropriate) by specific instructions. See Read Status Register (RDSR) for a detailed description of the Status Register bits. Dual Input Fast Program The Dual Input Fast Program (DIFP) instruction makes it possible to program up to 256 bytes using two input pins at the same time (by changing bits from 1 to 0). For optimized timings, it is recommended to use the Dual Input Fast Program (DIFP) instruction to program all consecutive targeted bytes in a single sequence rather to using several Dual Input Fast Program (DIFP) sequences each containing only a few bytes. Protection Modes The environments where non-volatile memory devices are used can be very noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the A25L032 boasts the following data protection mechanisms: Power-On Reset and an internal timer (tPUW) can provide protection against inadvertent changes while the power supply is outside the operating specification. Program, Erase and Write Status Register instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events: - Power-up - Write Disable (WRDI) instruction completion - Write Status Register (WRSR) instruction completion - Program OTP (POTP) instruction completion - Page Program (PP) instruction completion - Dual Input Fast Program (DIFP) instruction completion - Sector Erase (SE) instruction completion - Block Erase (BE) instruction completion - Chip Erase (CE) instruction completion The Block Protect (BP2, BP1, BP0) bits conjunction with Sector Protect (SEC) bit , Top/Bottom (TB) bit and Complement Protect (CMP) bit allow part of the memory to be configured as read-only. This is the Software Protected Mode (SPM). The Write Protect ( W ) signal allows the Block Protect (BP2, BP1, BP0) bits, Sector Protect (SEC) bit, Top/Bottom (TB) bit, All Protect (APT), Complement Protect (CMP) bit and Status Register Protect (SRP1, SRP0) bits to be protected. This is the Hardware Protected Mode (HPM). In addition to the low power consumption feature, the Deep Power-down mode offers extra software protection from inadvertent Write, Program and Erase instructions, as all instructions are ignored except one particular instruction (the Release from Deep Power-down instruction). Sector Erase, Block Erase, and Chip Erase The Page Program (PP) instruction and Dual Input Fast Program (DIFP) instruction allow bits to be reset from 1 to 0. Before this can be applied, the bytes of memory need to have been erased to all 1s (FFh). This can be achieved, a sector at a time, using the Sector Erase (SE) instruction, a block at a time, using the Block Erase (BE) instruction, or throughout the entire memory, using the Chip Erase (CE) instruction. This starts an internal Erase cycle (of duration tSE, tBE, or tCE). The Erase instruction must be preceded by a Write Enable (WREN) instruction. Polling During a Write, Program or Erase Cycle A further improvement in the time to Write Status Register (WRSR), Program OTP (POTP), Program (PP, DIFP), or Erase (SE, BE, or CE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, tBE, tCE). The Write In Progress (WIP) bit is provided in the Status Register so that the application program can monitor its value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete. Active Power, Stand-by Power and Deep Power-Down Modes When Chip Select ( S ) is Low, the device is enabled, and in the Active Power mode. When Chip Select ( S ) is High, the device is disabled, but could remain in the Active Power mode until all internal cycles have completed (Program, Erase, Write Status Register). The device then goes in to the Stand-by Power mode. The device consumption drops to ICC1. The Deep Power-down mode is entered when the specific instruction (the Deep Power-down Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device remains in this mode until another specific instruction (December, 2014, Version 1.5) 6 AMIC Technology Corp. A25L032 Series Table 1-1. Protected Area Sizes (CMP=0) A25L032 Status Register Content (32M-Bit) Memory Protection SEC TB BP2 BP1 BP0 Block(s) Addresses Density(Byte) Portion X X 0 0 0 None None None None 0 0 0 0 1 63 3F0000h - 3FFFFFh 64KB Upper 1/64 0 0 0 1 0 62 - 63 3E0000h - 3FFFFFh 128KB Upper 1/32 0 0 0 1 1 60 - 63 3C0000h - 3FFFFFh 256KB Upper 1/16 0 0 1 0 0 56 - 63 380000h - 3FFFFFh 512KB Upper 1/8 0 0 1 0 1 48 - 63 300000h - 3FFFFFh 1MB Upper 1/4 0 0 1 1 0 32 - 63 200000h - 3FFFFFh 2MB Upper 1/2 0 1 0 0 1 0 000000h - 00FFFFh 64KB Lower 1/64 0 1 0 1 0 0-1 000000h - 01FFFFh 128KB Lower 1/32 0 1 0 1 1 0-3 000000h - 03FFFFh 256KB Lower 1/16 0 1 1 0 0 0-7 000000h - 07FFFFh 512KB Lower 1/8 0 1 1 0 1 0 - 15 000000h - 0FFFFFh 1MB Lower 1/4 0 1 1 1 0 0 - 31 000000h - 1FFFFFh 2MB Lower 1/2 X X 1 1 1 0 - 63 000000h - 3FFFFFh 4MB ALL 1 0 0 0 1 63 3FF000h - 3FFFFFh 4KB Top Block 1 0 0 1 0 63 3FE000h - 3FFFFFh 8KB Top Block 1 0 0 1 1 63 3FC000h - 3FFFFFh 16KB Top Block 1 0 1 0 X 63 3F8000h - 3FFFFFh 32KB Top Block 1 0 1 1 0 63 3F0000h - 3FFFFFh 64KB Top Block 1 1 0 0 1 0 000000h - 000FFFh 4KB Bottom Block 1 1 0 1 0 0 000000h - 001FFFh 8KB Bottom Block 1 1 0 1 1 0 000000h - 003FFFh 16KB Bottom Block 1 1 1 0 X 0 000000h - 007FFFh 32KB Bottom Block 1 1 1 1 0 0 000000h - 00FFFFh 64KB Bottom Block Note: 1. X = don't care 2. When CMP is 0, the device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) bits are 0. (December, 2014, Version 1.5) 7 AMIC Technology Corp. A25L032 Series Table 1-2. Protected Area Sizes (CMP=1) A25L032 Status Register Content (32M-Bit) Memory Protection SEC TB BP2 BP1 BP0 Block(s) Addresses Density(Byte) Portion X X 0 0 0 0 - 63 000000h - 3FFFFFh 4MB All 0 0 0 0 1 0 - 62 000000h - 3EFFFFh 4032KB Lower 63/64 0 0 0 1 0 0 - 61 000000h - 3DFFFFh 3968KB Lower 31/32 0 0 0 1 1 0 - 59 000000h - 3BFFFFh 3840KB Lower 15/16 0 0 1 0 0 0 - 55 000000h - 37FFFFh 3584KB Lower 7/8 0 0 1 0 1 0 - 47 000000h - 2FFFFFh 3MB Lower 3/4 0 0 1 1 0 0 - 31 000000h - 1FFFFFh 2MB Lower 1/2 0 1 0 0 1 1 - 63 010000h - 3FFFFFh 4032KB Upper 63/64 0 1 0 1 0 2 - 63 020000h - 3FFFFFh 3968KB Upper 31/32 0 1 0 1 1 4 - 63 040000h - 3FFFFFh 3840KB Upper 15/16 0 1 1 0 0 8 - 63 080000h - 3FFFFFh 3584KB Upper 7/8 0 1 1 0 1 16 - 63 100000h - 3FFFFFh 3MB Upper 3/4 0 1 1 1 0 32 - 63 200000h - 3FFFFFh 2MB Upper 1/2 X X 1 1 1 None None None None 1 0 0 0 1 0 - 62 000000h - 3FEFFFh 4092KB Lower 1023/1024 1 0 0 1 0 0 - 62 000000h - 3FDFFFh 4088KB Lower 511/512 1 0 0 1 1 0 - 62 000000h - 3FBFFFh 4080KB Lower 255/256 1 0 1 0 X 0 - 62 000000h - 3F7FFFh 4064KB Lower 127/128 1 0 1 1 0 0 - 62 000000h - 3EFFFFh 4032KB Lower 63/64 1 1 0 0 1 1 - 63 001000h - 3FFFFFh 4092KB Upper 1023/1024 1 1 0 1 0 1 - 63 002000h - 3FFFFFh 4088KB Upper 511/512 1 1 0 1 1 1 - 63 004000h - 3FFFFFh 4080KB Upper 255/256 1 1 1 0 X 1 - 63 008000h - 3FFFFFh 4064KB Upper 127/128 1 1 1 1 0 1 - 63 010000h - 3FFFFFh 4032KB Upper 63/64 Note: 1. X = don't care 2. When CMP is 1, the device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) bits are 1. (December, 2014, Version 1.5) 8 AMIC Technology Corp. A25L032 Series MEMORY ORGANIZATION Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector, Block, or Chip Erasable (bits are erased from 0 to 1) but not Page Erasable. The memory is organized as: 4,194,304 bytes (8 bits each) 64 blocks (64 Kbytes each) 1024 sectors (4 Kbytes each) 16384 pages (256 bytes each) 64 bytes OTP located outside the main memory array Table 2. Memory Organization A25L032 Address Table Block Sector 1023 1007 3EF000h 3EFFFFh 12F000h 12FFFFh ... ... 288 120000h 120FFFh 287 11F000h 11FFFFh ... ... ... ... 272 110000h 110FFFh 271 10F000h 10FFFFh ... ... ... ... ... FFFFFh EFFFFh 224 E0000h E0FFFh 223 DF000h DFFFFh ... 208 D0000h D0FFFh 207 CF000h CFFFFh ... ... ... ... ... ... 17FFFFh EF000h ... ... 12 239 ... ... 180FFFh F0FFFh ... ... ... 180000h F0000h ... ... 18FFFFh 240 ... ... 13 ... ... 19FFFFh ... ... 14 ... 15 1AFFFFh ... 192 C0000h C0FFFh 368 170000h 170FFFh 191 ... ... 150000h 150FFFh 9 B0FFFh 175 AF000h AFFFFh ... ... 336 10 B0000h ... 15FFFFh 176 ... 160FFFh 15F000h ... ... ... 160000h 351 BFFFFh ... 16FFFFh 352 (December, 2014, Version 1.5) 11 BF000h ... 16F000h ... 21 303 1B0FFFh 384 367 22 130FFFh 100FFFh 190FFFh 17F000h 130000h FF000h 190000h 383 304 100000h 400 18F000h 13FFFFh 255 1A0FFFh 19F000h 13F000h 256 1A0000h 399 23 1AF000h 1BFFFFh 416 415 24 1B0000h 16 319 ... ... ... 431 25 ...... ... 1C0FFFh 1BF000h 17 1CFFFFh 1C0000h 432 26 1CF000h 448 447 27 ...... ...... .... 463 28 18 140FFFh ... 3E0FFFh 140000h ... ... 3E0000h 320 ... ... 992 19 14FFFFh ... 3F0FFFh 14F000h ... ... 3F0000h 20 Address range ... ... 1008 Sector 335 3FFFFFh ... 62 3FF000h ... 63 Block Address range 160 A0000h A0FFFh AMIC Technology Corp. A25L032 Series Memory Organization (continued) Block Sector 159 8F000h 8FFFFh 127 7F000h 7FFFFh 111 31 1F000h 1FFFFh 10000h 10FFFh 6FFFFh 0FFFFh ... ... ... ... 4 04000h 04FFFh 3 03000h 03FFFh 2 02000h 02FFFh 1 01000h 01FFFh 0 00000h 00FFFh ... 60FFFh 96 60000h 95 5F000h 5FFFFh ... ... 80 50000h 50FFFh 79 4F000h 4FFFFh ... ... 64 40000h 40FFFh (December, 2014, Version 1.5) 20FFFh 0F000h ... 4 20000h 15 ... 5 6F000h 32 16 ... 6 2FFFFh ... 70FFFh 2F000h ... ... 70000h 47 ... ... 112 1 30FFFh ... 80FFFh 30000h ... ... 80000h 48 ... ... 128 2 3FFFFh ... 143 3F000h ... ... 90FFFh 3 Address range ... ... 90000h ... 7 144 Sector 63 9FFFFh ... 8 9F000h ... 9 Block Address range 0 10 AMIC Technology Corp. A25L032 Series INSTRUCTIONS All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial Data Input(s) IO0 (IO1) is (are) sampled on the first rising edge of Serial Clock (C) after Chip Select ( S ) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on Serial Data Input(s) IO0 (IO1), each bit being latched on the rising edges of Serial Clock (C). The instruction set is listed in Table 3. Every instruction sequence starts with a one-byte instruction code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by dummy bytes (don't care), or by a combination or none. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read), Read Data Bytes at Higher Speed by Dual Output (FAST_READ_DUAL_OUTPUT), Read Data Bytes at Higher Speed by Dual Input and Dual Output (FAST_READ_DUAL_INPUT_OUTPUT), Read OTP (ROTP), Read Identification (RDID), Read Electronic Manufacturer and Device Identification (REMS), Read Status Register (RDSR) or Release from Deep Power-down, Read Device (December, 2014, Version 1.5) Identification and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip Select ( S ) can be driven High after any bit of the data-out sequence is being shifted out. In the case of a Page Program (PP), Program OTP (POTP), Dual Input Fast Program (DIFP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, Chip Select ( S ) must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select ( S ) must driven High when the number of clock pulses after Chip Select ( S ) being driven Low is an exact multiple of eight. All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected. 11 AMIC Technology Corp. A25L032 Series Table 3. Instruction Set Instruction One-byte Instruction Code Description Address Bytes Dummy Bytes Data Bytes WREN Write Enable 0000 0110 06h 0 0 0 WRDI Write Disable 0000 0100 04h 0 0 0 RDSR-1 Read Status Register-1 0000 0101 05h 0 0 1 to RDSR-2 Read Status Register-2 0011 0101 35h 0 0 1 to WRSR Write Status Register 0000 0001 01h 0 0 2 READ Read Data Bytes 0000 0011 03h 3 0 1 to FAST_READ Read Data Bytes at Higher Speed 0000 1011 0Bh 3 1 1 to FAST_READ_DUAL _OUTPUT Read Data Bytes at Higher Speed by Dual Output (1) 0011 1011 3Bh 3 1 FAST_READ_DUAL _INPUT_OUTPUT Read Data Bytes at Higher Speed by (1)(2) Dual Input and Dual Output 1011 1011 BBh 3(2) 1(2) 1 to (1) ROTP Read OTP (Read 64 bytes of OTP area) 0100 1011 4Bh or 48h 3 1 1 to POTP Program OTP (Program 64 bytes of OTP area) 0100 0010 42h 3 0 1 to 64 PP Page Program 0000 0010 02h 3 0 1 to 256 DIFP Dual Input Fast Program 1010 0010 A2h 3 0 1 to 256(3) SE Sector Erase 0010 0000 20h 3 0 0 BE Block Erase 1101 1000 D8h or 52h 3 0 0 CE Chip Erase 1100 0111 C7h or 60h 0 0 0 DP Deep Power-down 1011 1001 B9h 0 0 0 RDID Read Device Identification 1001 1111 9Fh 0 0 1 to REMS Read Electronic Manufacturer & Device Identification 1001 0000 90h (4) 2 1 to 1010 1011 ABh 0 3 1 to 0 0 0 RES Release from Deep Power-down, and Read Electronic Signature Release from Deep Power-down 1 1 to HPM High Performance Mode 1010 0011 A3h 0 3 0 Continuous Read (5) Mode Reset Reset Mode Bit M<4> to 1 1111 1111 1111 1111 FFFFh 0 0 0 Note: (1) Dual Output Data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) (2) Dual Input Address IO0 = (A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0) IO1 = (A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3, M1) (3) Dual Input Fast Program Input Data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) (4) ADD= (00h) will output manufacturer's ID first and ADD=(01h) will output device ID first (5) This instruction is recommended when using the Dual "Continuous Read Mode" features. See page 22 for more information. (December, 2014, Version 1.5) 12 AMIC Technology Corp. (1) A25L032 Series Write Enable (WREN) The Write Enable (WREN) instruction (Figure 3.) sets the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Dual Input Fast Program (DIFP), Program OTP (POTP), Sector Erase (SE), Block Erase (BE), and Chip Erase (CE) and Write Status Register (WRSR) instruction. The Write Enable (WREN) instruction is entered by driving Chip Select ( S ) Low, sending the instruction code, and then driving Chip Select ( S ) High. Figure 3. Write Enable (WREN) Instruction Sequence S 0 1 2 3 4 5 6 7 C Instruction (06h) DI DO High Impedance Write Disable (WRDI) Power-up The Write Disable (WRDI) instruction (Figure 4.) resets the Write Enable Latch (WEL) bit. The Write Disable (WRDI) instruction is entered by driving Chip Select ( S ) Low, sending the instruction code, and then driving Chip The Write Enable Latch (WEL) bit is reset under the following conditions: Write Disable (WRDI) instruction completion Write Status Register (WRSR) instruction completion Page Program (PP) instruction completion Dual Input Fast Program (DIFP) instruction completion Program OTP (POTP) instruction completion Sector Erase (SE) instruction completion Block Erase (BE) instruction completion Chip Erase (CE) instruction completion Figure 4. Write Disable (WRDI) Instruction Sequence S 0 1 2 3 4 5 6 7 C Instruction (04h) DI DO (December, 2014, Version 1.5) High Impedance 13 AMIC Technology Corp. A25L032 Series Read Status Register (RDSR) The Read Status Register (RDSR) instruction allows the Status Register to be read. The instruction code of "05h" is for Status Register-1 and "35h" is for Status Register-2. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously, as shown in Figure 5. Table 4-a Status Register-1 Format b7 SRP0 b6 SEC b5 TB b4 BP2 b3 BP1 b2 BP0 b1 WEL b0 WIP Status Register Protect 0 (Non-volatile) Sector Protect (Non-volatile) Top/Bottom Bit (Non-volatile) Block Protect Bits (Non-volatile) Write In Progress Bit Table 4-b Status Register-2 Format b14 CMP b13 0 b12 0 b11 0 b10 APT b9 0 b8 SRP1 Reserved Complement Protect (Non-volatile) Reserved All Protect (Non-volatile) Reserved Status Register Protect 1 (Non-volatile) The status and control bits of the Status Register are as follows: WIP bit. The Write In Progress (WIP) bit is a read only bit in the status register (b0) that is set to a 1 state when the device is busy with a Write Status Register, Program or Erase cycle. During this time the device will ignore further instructions except for the Read Status Register instruction (see tW, tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase, or write status register instruction has completed, the WIP bit will be cleared to a 0 state indicating the device is ready for further instructions. WEL bit. The Write Enable Latch (WEL) bit is a read only bit in the status register (b1) that is set to a 1 after executing a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page Program, Dual Input Fast Program, Quad Input Fast Program, Sector Erase, Block (December, 2014, Version 1.5) TB bit. The non-volatile Top/Bottom (TB) bit controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 1. Protected Area Sizes. The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction depending on the state of the SRP1, SRP0, and WEL bit. SEC bit. The non-volatile Sector Protect (SEC) bit in the status register (b6) controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 1. Protected Area Sizes. This bit can be set with the Write Status Register Instruction depending on the state of the SRP1, SRP0, and WEL bit. The factory default setting for SEC is 0. Write Enable Latch Bit b15 0 Erase, Chip Erase, and Write Status Register. BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, and BP0) bits are non-volatile read/write bits in the status register (b4, b3, and b2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be protected from Program and Erase instructions (see Table 1. Protected Area Sizes). These bits can be set with the Write Status Register Instruction depending on the state of the SRP1, SRP0, and WEL bit. The factory default setting for the Block Protect Bits is 0 which means none of the array protected. For value of BP2, BP1, BP0 after power-on, see note please. SRP1, SRP0 bits. The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register (b8 and b7). The SRP bits control the method of write protection: software protection, hardware protection, or one time programmable protection. APT bit. The All Protect (APT) bit is a non-volatile read/write bit in the status register (b10). Whole chip will be kept in write-protect state after power-on if this bit is set to 1. This bit can be set with the Write Status Register Instruction depending on the state of the SRP1, SRP0, and WEL bit. The factory default setting for APT is 0. CMP bit. The Complement Protect (CMP) bit is a non-volatile read/write bit in the status register (b14). It's used in conjunction with SEC, TB, BP2, BP1, BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. Please refer to table 1 for more details. The factory default setting for CMP is 0. Note: 1. When APT is 0, BP2, BP1, BP0 won't be changed after power-on. 2. When APT is 1 and CMP is 0, all BP2, BP1, BP0 will be set to 1 after power-on. 3. When APT is 1 and CMP is 1, all BP2, BP1, BP0 will be set to 0 after power-on. 14 AMIC Technology Corp. A25L032 Series Figure 5. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 C Instruction (05h or 35h) DI Status Register 1 or 2 Out DO High Impedance (December, 2014, Version 1.5) 7 6 5 MSB 3 2 1 4 15 Status Register 1 or 2 Out 0 7 6 MSB 5 4 3 2 1 0 7 AMIC Technology Corp. A25L032 Series Write Status Register (WRSR) The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) instruction is entered by driving Chip Select ( S ) Low, followed by the instruction code and the data byte on Serial Data Input (DI). The instruction sequence is shown in Figure 6. Only non-volatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7, 6, 5, 4, 3, 2 of Status Register-1) and CMP, APT, SRP1 (bits 14, 10 and 8 of Status Register-2) can be written. All other Status Register bits are always read as `0' and will not be affected by the Write Status Register instruction. Chip Select ( S ) must be driven High after the eighth or sixteenth bit of the data byte has been latched in. If not, the Write Status Register (WRSR) instruction is not executed. If Chip Select ( S ) is driven high after the eighth clock the CMP, QE and SRP1 bits will be cleared to 0. As soon as Chip Select ( S ) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect (APT, CMP, SEC, TB, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table 1. The Write Status Register (WRSR) instruction also allows the user to set the Status Register Protect (SRP1, SRP0) bits. Those bits are used in conjunction with the Write Protect ( W ) pin to disable writes to the Status Register. Factory default for all Status Register bits are 0. Figure 6. Write Status Register (WRSR) Instruction Sequence S 0 C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Instruction (01h) DI Status Register In 7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8 MSB High Impedance DO Table 5. Protection Modes SRP1 SRP0 W Status Register Description 0 0 X Software Protection Status Register is Writable (if the WREN instruction has set the WEL bit). The values in the CMP, APT, SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits can be changed. 0 1 0 Hardware Protection Status Register is hardware write protected. The values in the CMP, APT, SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits cannot be changed. 0 1 1 Software Protection When W pin is high. Status Register is Writable (if the WREN instruction has set the WEL bit). The values in the CMP, APT, SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits can be changed. 1 1 X One Time Program Status Register is permanently protected. The values in the CMP, APT, SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits cannot be changed. (December, 2014, Version 1.5) 16 AMIC Technology Corp. A25L032 Series Read Data Bytes (READ) The device is first selected by driving Chip Select ( S ) Low. The instruction code for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a maximum frequency fR, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 7. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes (READ) instruction is terminated by driving Chip Select ( S ) High. Chip Select ( S ) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 7. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 C Instruction (03h) 24-Bit Address 23 22 21 DI 3 2 1 0 MSB DO High Impedance 7 6 Data Out 1 5 4 3 2 Data Out 2 1 0 7 MSB Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 17 AMIC Technology Corp. A25L032 Series Read Data Bytes at Higher Speed (FAST_READ) Speed (FAST_READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes at Higher Speed (FAST_READ) The device is first selected by driving Chip Select ( S ) Low. The instruction code for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 8. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at Higher instruction is terminated by driving Chip Select ( S ) High. Chip Select ( S ) can be driven High at any time during data output. Any Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 8. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction (0Bh) 24-Bit Address 23 22 21 DI 2 3 1 0 MSB High Impedance DO S 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C Dummy Byte DI 7 6 5 4 3 2 1 0 Data Out 2 Data Out 1 DO 7 6 5 4 3 2 1 0 MSB 7 6 MSB 5 4 3 2 1 0 7 MSB Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 18 AMIC Technology Corp. A25L032 Series Read Data Bytes at Higher Speed by Dual Output (FAST_READ_DUAL_OUTPUT) This is accomplished by adding eight "dummy" clocks after the 24-bit address as shown in figure 9. The dummy clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is "don't care". However, the IO0 and IO1 pins should be high-impedance prior to the falling edge of the first data out clock. The FAST_READ_DUAL_OUTPUT (3Bh) instruction is similar to the FAST_READ (0Bh) instruction except the data is output on two pins, IO0 and IO1, instead of just DO. This allows data to be transferred from the A25L032 at twice the rate of standard SPI devices. Similar to the FAST_READ instruction, the FAST_READ_DUAL_OUTPUT instruction can operate at the highest possible frequency of fC (See AC Characteristics). Figure 9. FAST_READ_DUAL_OUTPUT Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction (3Bh) 24-Bit Address 23 22 21 IO0 2 3 1 0 MSB High Impedance IO1 S 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C DIO switches from input to output Dummy Byte IO0 7 6 IO1 5 4 3 2 1 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 MSB Data Out 1 Data Out 2 Data Out 3 7 MSB MSB Data Out 4 Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 19 AMIC Technology Corp. A25L032 Series Read Data Bytes at Higher Speed by Dual Input and Dual Output (FAST_READ_DUAL_INPUT_OUTPUT) The FAST_READ_DUAL_INPUT_OUTPUT (BBh) instruction is similar to the FAST_READ (0Bh) instruction except the data is input and output on two pins, IO0 and IO1, instead of just DO. This allows data to be transferred from the A25L032 at twice the rate of standard SPI devices. Similar to the FAST_READ instruction, the FAST_READ_DUAL_INPUT_OUTPUT instruction can operate at the highest possible frequency of fC (See AC Characteristics). The FAST_READ_DUAL_INPUT_OUTPUT instruction can further reduce instruction overhead through setting the Mode bits (M7-0) after the input Address bits (A23-0), as shown in Figure 10-a. The upper nibble of the Mode (M7-4) bits controls the length of the next FAST_READ_DUAL_INPUT_OUTPUT instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0) bits are don't care ("x"). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If the Mode bits (M5-4) equal "10" hex, then the chip is into "Continuous Read" Mode and the next FAST_READ_DUAL_INPUT_OUTPUT instruction (after S is raised and then lowered) does not require the BBh instruction code, as shown in figure 10-b. This reduces the instruction sequence by eight clocks and allows the address to be immediately entered after S is asserted low. If the Mode bits (M5-4) are any value other than "10" hex, the next instruction (after S is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. Figure 10-a. FAST_READ_DUAL_INPUT_OUTPUT Instruction Sequence and Data-Out Sequence (M5-410h) S 0 1 2 3 4 5 6 7 8 16 17 18 19 9 10 C Instruction (BBh) 24-Bit Address 22 20 18 IO0 6 4 2 0 7 5 3 1 MSB IO1 High Impedance 23 21 19 S 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 C DIO switches from input to output M7-0 6 4 2 IO0 6 4 2 0 IO1 7 5 3 1 7 5 3 MSB 0 6 1 Data Out 1 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 MSB 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 MSB Data Out 2 Data Out 3 Data Out 4 7 MSB Data Out 5 Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 20 AMIC Technology Corp. A25L032 Series Figure 10-b. FAST_READ_DUAL_INPUT_OUTPUT Instruction Sequence and Data-Out Sequence Continuous Read Mode, (M5-4=10h) S 0 1 2 3 4 ... 7 8 9 10 11 C 24-Bit Address IO0 22 20 18 6 4 2 0 IO1 23 21 19 7 5 3 1 S 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 C DIO switches from input to output M7-0 6 4 2 IO0 6 4 2 0 IO1 7 5 3 1 7 5 3 MSB 0 6 1 Data Out 1 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 MSB Data Out 2 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 MSB Data Out 3 Data Out 4 7 MSB Data Out 5 Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 21 AMIC Technology Corp. A25L032 Series Read OTP (ROTP) 000000h, allowing the read sequence to be continued indefinitely. The Read OTP (ROTP) instruction is terminated by driving The device is first selected by driving Chip Select ( S ) Low. The instruction code for the Read OTP (ROTP) instruction is followed by a 3-byte address (A23- A0) and a dummy byte. Each bit is latched in on the rising edge of Serial Clock (C). Then the memory contents at that address are shifted out on Serial Data output (DO). Each bit is shifted out at the maximum frequency, fC(Max.) on the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 11. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to Chip Select ( S ) High. Chip Select ( S ) can be driven High at any time during data output. Any Read OTP (ROTP) instruction issued while an Erase, Program or Write Status Register cycle is in progress, is rejected without having any effect on the cycle that is in progress. Figure 11. Read OTP (ROTP) instruction and data-out sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction (4Bh or 48h) 24-Bit Address DI 23 22 21 2 3 1 0 MSB High Impedance DO S 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C Dummy Byte DI 7 6 5 4 3 DO 2 1 0 7 6 5 4 3 2 1 0 MSB 7 6 5 4 3 2 MSB Data Out 1 1 0 7 MSB Data Out n Note: A23 to A6 are don't care. (1 n 64) (December, 2014, Version 1.5) 22 AMIC Technology Corp. A25L032 Series Program OTP (POTP) completed. At some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset. The Program OTP instruction (POTP) is used to program at most 64 bytes to the OTP memory area (by changing bits from 1 to 0, only). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL) bit. The Program OTP instruction is entered by driving Chip To lock the OTP memory: Bit 0 of the OTP control byte, that is byte 63, (see Figure 12) is used to permanently lock the OTP memory array. * When bit 0 of byte 63 = '1', the OTP memory array can be programmed. * When bit 0 of byte 63 = `0', the OTP memory array are read-only and cannot be programmed anymore. Once a bit of the OTP memory has been programmed to `0', it can no longer be set to `1'. Therefore, as soon as bit 0 of address 63h (control byte) is set to `0', the 64 bytes of the OTP memory array become read-only in a permanent way. Any Program OTP (POTP) instruction issued while an Erase, Program or Write Status Register cycle is in progress is rejected without having any effect on the cycle that is in progress. Select ( S ) Low, followed by the instruction code, three address bytes and at least one data byte on Serial Data input (DI). Chip Select ( S ) must be driven High after the eighth bit of the last data byte has been latched in, otherwise the Program OTP instruction is not executed. The instruction sequence is shown in Figure 12. As soon as Chip Select ( S ) is driven High, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Program OTP cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Program OTP cycle, and it is 0 when it is Figure 12. Program OTP (POTP) instruction sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 C Instruction (42h) 24-Bit Address 23 22 21 DI 2 3 Data Byte 1 1 7 6 0 5 3 2 0 4 1 0 MSB MSB S 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 C Data Byte 2 DI 7 6 5 4 3 2 1 Data Byte 3 0 7 6 5 4 3 2 Data Byte n 1 0 7 6 MSB 5 4 3 2 1 0 7 MSB MSB Note: A23 to A6 are don't care. (1 n 64) Figure 13. How to permanently lock the 64 OTP bytes 64 Data Byte OTP Control Byte Byte Byte Byte 0 1 2 Byte Byte 62 63 Bit 7 (December, 2014, Version 1.5) Bit 6 Bit 5 Bit 4 23 Bit 3 Bit 2 Bit 1 Bit 0 When bit 0 =0 the OTP bytes become READ only AMIC Technology Corp. A25L032 Series Page Program (PP) The Page Program (PP) instruction allows bytes to be programmed in the memory (changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). programmed correctly within the same page. If less than 256 Data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. Chip Select ( S ) must be driven High after the eighth bit of the last data byte has been latched in, otherwise the Page Program (PP) instruction is not executed. The Page Program (PP) instruction is entered by driving Chip Select ( S ) Low, followed by the instruction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits As soon as Chip Select ( S ) is driven High, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. (A7-A0) are all zero). Chip Select ( S ) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 14. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be A Page Program (PP) instruction applied to a page which is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, BP0) bits (see table 1) is not executed. Figure 14. Page Program (PP) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 C Instruction (02h) 23 22 21 3 2 1 MSB 0 5 7 6 4 3 1 2 0 S 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2073 2074 2075 2076 2077 2078 2079 MSB 2072 DI Data Byte 1 24-Bit Address C Data Byte 2 DI 7 6 MSB 5 4 3 2 Data Byte 3 1 0 7 6 5 4 MSB 3 2 Data Byte 256 1 0 7 6 5 4 3 2 1 0 MSB Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 24 AMIC Technology Corp. A25L032 Series Dual Input Fast Program (DIFP) having any effects on the other bytes in the same page. For optimized timings, it is recommended to use the Dual Input Fast Program (DIFP) instruction to program all consecutive targeted bytes in a single sequence rather to using several Dual Input Fast Program (DIFP) sequences each containing only a few bytes. The Dual Input Fast Program (DIFP) instruction is very similar to the Page Program (PP) instruction, except that the data are entered on two pins IO0 and IO1 instead of only one. Inputting the data on two pins instead of one doubles the data transfer bandwidth compared to the Page Program (PP) instruction. The Dual Input Fast Program (DIFP) instruction is entered by Chip Select ( S ) must be driven High after the eighth bit of the last data byte has been latched in, otherwise the Dual Input Fast Program (DIFP) instruction is not executed. driving Chip Select ( S ) Low, followed by the instruction code, three address bytes and at least one data byte on Serial Data Output (IO0 and IO1). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) As soon as Chip Select ( S ) is driven High, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Dual Input Fast Program (DIFP) cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Dual Input Fast Program (DIFP) instruction applied to a page that is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, BP0) bits (see Table 1) is not executed. are all zero). Chip Select ( S ) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 15. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without Figure 15. Dual Input Fast Program (DIFP) instruction sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction (A2h) 24-Bit Address 23 22 21 IO0 2 3 1 0 MSB High Impedance IO1 S 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C IO0 6 4 2 0 6 Data In 1 IO1 7 5 3 MSB 4 2 0 6 Data In 2 1 7 5 3 MSB 4 2 0 6 Data In 3 1 7 5 MSB 3 4 2 0 6 4 Data In 4 1 7 5 MSB 3 2 0 6 Data In 5 1 7 5 MSB 3 1 4 2 0 Data In 256 7 5 3 1 MSB Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 25 AMIC Technology Corp. A25L032 Series Sector Erase (SE) The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Sector Erase (SE) instruction is entered by driving Chip instruction is not executed. As soon as Chip Select ( S ) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, BP0) bits (see table 1) is not executed. Select ( S ) Low, followed by the instruction code on Serial Data Input (DI). Chip Select ( S ) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 16. Chip Select ( S ) must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Sector Erase Figure 16. Sector Erase (SE) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction (20h) DI 24-Bit Address 23 22 21 3 2 1 0 MSB Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 26 AMIC Technology Corp. A25L032 Series Block Erase (BE) The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Block Erase (BE) instruction is entered by driving Chip instruction is not executed. As soon as Chip Select ( S ) is driven High, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Block Erase (BE) instruction applied to a page which is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, BP0) bits (see table 1) is not executed. Select ( S ) Low, followed by the instruction code on Serial Data Input (DI). Chip Select ( S ) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 17. Chip Select ( S ) must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Block Erase Figure 17. Block Erase (BE) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C 24-Bit Address Instruction (D8h or 52h) 23 22 21 DI 3 2 1 0 MSB Note: Address bits A23 to A22 are Don't Care, for A25L032. (December, 2014, Version 1.5) 27 AMIC Technology Corp. A25L032 Series Chip Erase (CE) code has been latched in, otherwise the Chip Erase The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Chip Erase (CE) instruction is entered by driving Chip instruction is not executed. As soon as Chip Select ( S ) is driven High, the self-timed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) instruction is ignored if one, or more, sectors/blocks are protected. Select ( S ) Low, followed by the instruction code on Serial Data Input (DI). Chip Select ( S ) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 18. Chip Select ( S ) must be driven High after the eighth bit of the instruction Figure 18. Chip Erase (CE) Instruction Sequence S 0 1 2 3 4 5 6 7 C Instruction (C7h or 60h) DI (December, 2014, Version 1.5) 28 AMIC Technology Corp. A25L032 Series Deep Power-down (DP) The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in the Standby mode. The Deep Power-down (DP) instruction is entered by driving Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase instructions. Chip Select ( S ) Low, followed by the instruction code on Serial Data Input (DI). Chip Select ( S ) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 19. Driving Chip Select ( S ) High deselects the device, and puts the device in the Standby mode (if there is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce the standby current (from ICC1 to ICC2, as specified in DC Characteristics Table.). Chip Select ( S ) must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as Chip Select ( S ) is driven High, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep Power-down mode is entered. Any Deep Power-down (DP) instruction, while an Erase, Program or Write Status Register cycle is in progress, is rejected without having any effects on the cycle that is in progress. Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release from Deep Power-down and Read Electronic Signature (RES) instruction. This releases the device from this mode. The Release from Deep Power-down and Read Electronic Signature (RES) instruction also allows the Electronic Signature of the device to be output on Serial Data Output (DO). Figure 19. Deep Power-down (DP) Instruction Sequence S 0 1 2 3 4 5 6 tDP 7 C Instruction (B9h) DI Stand-by Mode (December, 2014, Version 1.5) 29 Deep Power-down Mode AMIC Technology Corp. A25L032 Series Read Device Identification (RDID) The Read Identification (RDID) instruction allows the 8-bit manufacturer identification code to be read, followed by two bytes of device identification. The manufacturer identification is assigned by JEDEC, and has the value 37h. The device identification is assigned by the device manufacturer, and indicates the memory in the first byte (30h), and the memory capacity of the device in the second byte (16h for A25L032). Any Read Identification (RDID) instruction while an Erase, or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output (DO), each bit being shifted out during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 20. The Read Identification (RDID) instruction is terminated by driving Chip Select ( S ) High at any time during data output. When Chip Select ( S ) is driven High, the device is put in the Stand-by Power mode. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The device is first selected by driving Chip Select ( S ) Low. Then, the 8-bit instruction code for the instruction is shifted in. Table 6. Read Identification (READ_ID) Data-Out Sequence Manufacture Identification Device Identification Manufacture ID Memory Type Memory Capacity 37h 30h 16h (A25L032) Figure 20. Read Identification (RDID) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 21 22 23 24 25 26 29 30 31 10 2 C Instruction (9Fh) IO0 IO1 23 High Impedance (December, 2014, Version 1.5) 22 21 18 17 16 15 Manufacture ID 30 14 13 9 Memory Type 8 7 6 5 1 0 Memory Capacity AMIC Technology Corp. A25L032 Series Read Electronic Manufacturer ID & Device ID (REMS) If the one-byte address is set to 01h, then the device ID be read first and then followed by the Manufacturer ID. the other hand, if the one-byte address is set to 00h, then Manufacturer ID will be read first and then followed by device ID. The Read Electronic Manufacturer ID & Device ID (REMS) instruction allows the 8-bit manufacturer identification code to be read, followed by one byte of device identification. The manufacturer identification is assigned by JEDEC, and has the value 37h for AMIC. The device identification is assigned by the device manufacturer, and has the value 15h for A25L032. Any Read Electronic Manufacturer ID & Device ID (REMS) instruction while an Erase, or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. will On the the The instruction sequence is shown in Figure 21. The Read Electronic Manufacturer ID & Device ID (REMS) instruction is terminated by driving Chip Select ( S ) High at any time during data output. When Chip Select ( S ) is driven High, the device is put in the Stand-by Power mode. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The device is first selected by driving Chip Select ( S ) Low. The 8-bit instruction code is followed by 2 dummy bytes and one byte address (A7~A0), each bit being latched-in on Serial Data Input (DI) during the rising edge of Serial Clock (C). Table 7. Read Electronic Manufacturer ID & Device ID (REMS) Data-Out Sequence Manufacture Identification Device Identification 37h 15h (A25L032) Figure 21. Read Electronic Manufacturer ID & Device ID (REMS) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 C Instruction (90h) 2 Dummy Bytes 15 14 13 DI 3 2 1 0 MSB DO High Impedance S 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C ADD(1) DI 7 6 5 4 3 2 1 0 Manufacturer ID Device ID 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 DO MSB MSB MSB Notes: (1) ADD=00h will output the manufacturer ID first and ADD=01h will output device ID first (December, 2014, Version 1.5) 31 AMIC Technology Corp. A25L032 Series Release from Deep Power-down and Read Electronic Signature (RES) stored in the memory, is shifted out on Serial Data Output (DO), each bit being shifted out during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 22. The Release from Deep Power-down and Read Electronic Signature (RES) instruction is terminated by driving Chip Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release from Deep Power-down and Read Electronic Signature (RES) instruction. Executing this instruction takes the device out of the Deep Power-down mode. The instruction can also be used to read, on Serial Data Output (DO), the 8-bit Electronic Signature, whose value for A25L032 is 15h. Select ( S ) High after the Electronic Signature has been read at least once. Sending additional clock cycles on Serial Clock Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep Power-down and Read Electronic Signature (RES) instruction always provides access to the 8-bit Electronic Signature of the device, and can be applied even if the Deep Power-down mode has not been entered. (C), while Chip Select ( S ) is driven Low, cause the Electronic Signature to be output repeatedly. When Chip Select ( S ) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Stand- Any Release from Deep Power-down and Read Electronic Signature (RES) instruction while an Erase, Program or Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. by Power mode is delayed by tRES2, and Chip Select ( S ) must remain High for at least tRES2 (max), as specified in AC Characteristics Table . Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The device is first selected by driving Chip Select ( S ) Low. The instruction code is followed by 3 dummy bytes, each bit being latched-in on Serial Data Input (DI) during the rising edge of Serial Clock (C). Then, the 8-bit Electronic Signature, Figure 22. Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 C Instruction (ABh) 23 22 21 DI tRES2 3 Dummy Bytes 3 2 1 0 MSB DO High Impedance 7 6 5 4 3 2 1 0 MSB Deep Power-down Mode Stand-by Mode Note: The value of the 8-bit Electronic Signature, for A25L032 is 15h. (December, 2014, Version 1.5) 32 AMIC Technology Corp. A25L032 Series Figure 23. Release from Deep Power-down (RES) Instruction Sequence S C 0 1 2 3 4 5 6 tRES1 7 Instruction (ABh) DI DO High Impedance Deep Power-down Mode Driving Chip Select ( S ) High after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in Figure 23.), still insures that the device is put into Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was (December, 2014, Version 1.5) Stand-by Mode previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES1, and Chip Select ( S ) must remain High for at least tRES1 (max), as specified in AC Characteristics Table. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. 33 AMIC Technology Corp. A25L032 Series High Performance Mode (A3h) The High Performance Mode (HPM) instruction can be executed prior to Dual instructions if chip is operated at high frequencies. This instruction allows pre-charging of internal charge pumps so the voltages required for accessing the Flash memory array are readily available. The instruction sequence includes the A3h instruction code followed by three dummy byte clocks shown in Fig.28. After the HPM instruction is executed, the device will maintain a slightly higher standby current than standard SPI operation. The Release from Power-down (ABh) can be used to return to standard SPI standby current (ICC1). In addition, Write Enable instruction (06h) and Power Down instruction (B9h) will also release the device from HPM mode back to standard SPI standby state. Figure 24. High Performance Mode Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction (A3) DI 23 22 21 3 MSB 2 1 0 High Performance Current DO (December, 2014, Version 1.5) tRES2 3 Dummy Bytes 34 AMIC Technology Corp. A25L032 Series Continuous Read Mode Reset (FFFFh) Continuous Read Mode Reset instruction can be used to set mode bit M4 to 1, thus the device will release the Continuous Read Mode and return to normal SPI operation, as shown in Fig.29. Continuous Read Mode and allow Standard SPI instructions to be recognized. To reset "Continuous Read Mode" during Dual I/O operation, sixteen clocks are needed to shift in instruction "FFFFh". Mode bit M5, M4 will be reset to 0 after power-on, so it's unnecessary to issue Continuous Read Mode Reset instruction even the controller resets while A25L032 is set to Continuous Mode Read. If user wants to issue a new command after A25L032 is set to Continuous Mode Read, it is recommended to issue a Continuous Read Mode Reset instruction before any command. Doing so will release the device from the Figure 25. Continuous Read Mode Reset for Fast Read Dual I/O Mode Bit Reset for Dual I/O S 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 C I/O0 FFh FFh I/O1 Do not care I/O2 Do not care I/O3 Do not care (December, 2014, Version 1.5) 35 AMIC Technology Corp. A25L032 Series POWER-UP AND POWER-DOWN At Power-up and Power-down, the device must not be selected (that is Chip Select ( S ) must follow the voltage applied on VCC) until VCC reaches the correct value: VCC (min) at Power-up, and then for a further delay of tVSL VSS at Power-down Usually a simple pull-up resistor on Chip Select ( S ) can be used to insure safe and proper Power-up and Power-down. To avoid data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less than the POR threshold value, VWI - all operations are disabled, and the device does not respond to any instruction. Moreover, the device ignores all Write Enable (WREN), Program OTP (POTP), Page Program (PP), Dual Input Fast Program (DIFP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE) and Write Status Register (WRSR) instructions until a time delay of tPUW has elapsed after the moment that VCC rises above the VWI threshold. However, the correct operation of the device is not guaranteed if, by this time, VCC is still below VCC(min). No Write Status Register, Program or Erase instructions should be sent until the later of: tPUW after VCC passed the VWI threshold - tVSL afterVCC passed the VCC(min) level These values are specified in Table 8. If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be selected for Read instructions even if the tPUW delay is not yet fully elapsed. At Power-up, the device is in the following state: The device is in the Standby mode (not the Deep Power-down mode). The Write Enable Latch (WEL) bit is reset. Normal precautions must be taken for supply rail decoupling, to stabilize the VCC feed. Each device in a system should have the VCC rail decoupled by a suitable capacitor close to the package pins. (Generally, this capacitor is of the order of 0.1F). At Power-down, when VCC drops from the operating voltage, to below the POR threshold value, VWI, all operations are disabled and the device does not respond to any instruction. (The designer needs to be aware that if a Power-down occurs while a Write, Program or Erase cycle is in progress, some data corruption can result.) Figure 26. Power-up Timing VCC VCC(max) VCC(min) Reset State tVSL VWI Read Access allowed Full Device Access tPUW time (December, 2014, Version 1.5) 36 AMIC Technology Corp. A25L032 Series Table 8. Power-Up Timing Symbol Parameter Min. Max. Unit tVSL VCC(min) to S Low 10 s tPUW Time Delay Before Write Instruction 3 ms VWI Write Inhibit Threshold Voltage 2.3 2.5 V Note: These parameters are characterized only. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). (December, 2014, Version 1.5) 37 AMIC Technology Corp. A25L032 Series Absolute Maximum Ratings* *Comments Storage Temperature (TSTG) . . . . . . . . . . -65C to + 150C Lead Temperature during Soldering (Note 1) D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to VCC+0.6V Transient Voltage (<20ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VCC+2.0V Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . -0.6V to +4.0V Electrostatic Discharge Voltage (Human Body model) (VESD) (Note 2) . . . . . . . . . . . . . . . . . . . -2000V to 2000V Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the AMIC SURE Program and other relevant quality documents. Notes: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly). 2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500) DC AND AC PARAMETERS This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 9. Operating Conditions Symbol Parameter Min. Max. Unit VCC Supply Voltage 2.7 3.6 V TA Ambient Operating Temperature -40 85 C Table 10. Data Retention and Endurance Parameter Condition Min. Max. Unit Erase/Program Cycles At 85C 100,000 Cycles Data Retention At 85C 20 Years Table 11. Capacitance Symbol Parameter COUT Output Capacitance (DO) CIN Input Capacitance (other pins) Test Condition Min. Max. Unit VOUT = 0V 8 pF VIN = 0V 6 pF Note: Sampled only, not 100% tested, at TA=25C and a frequency of 33 MHz. (December, 2014, Version 1.5) 38 AMIC Technology Corp. A25L032 Series Table 12. DC Characteristics Symbol Parameter Test Condition Min. Max. Unit ILI Input Leakage Current 2 A ILO Output Leakage Current 2 A ICC1 Standby Current 15 A ICC2 Deep Power-down Current S = VCC, VIN = VSS or VCC S = VCC, VIN = VSS or VCC 15 A C= 0.1VCC / 0.9.VCC at 100MHz, DO = open 24 mA C= 0.1VCC / 0.9.VCC at 50MHz, DO = open 21 mA C= 0.1VCC / 0.9.VCC at 33MHz, DO = open 17 mA C= 0.1VCC / 0.9.VCC at 100MHz, IO0, IO1 = open 26 mA S = VCC S = VCC 15 mA 12 mA S = VCC S = VCC 25 mA 25 mA ICC3 Operating Current (Read) Operating Current (Dual Read) ICC4 Operating Current (PP) ICC5 Operating Current (WRSR) ICC6 Operating Current (SE) ICC7 Operating Current (BE) VIL Input Low Voltage -0.5 0.3VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage IOL = 1.6mA 0.4 V VOH Output High Voltage IOH = -100A VCC-0.2 V Note: 1. This is preliminary data at 85C Table 13. AC Measurement Conditions Symbol CL Parameter Min. Load Capacitance Max. 30 Input Rise and Fall Times Unit pF 5 ns Input Pulse Voltages 0.2VCC to 0.8VCC V Input Timing Reference Voltages 0.3VCC to 0.7VCC V VCC / 2 V Output Timing Reference Voltages Note: Output Hi-Z is defined as the point where data out is no longer driven. Figure 27. AC Measurement I/O Waveform Input Levels Input and Output Timing Reference Levels 0.8VCC 0.7VCC 0.5VCC 0.3VCC 0.2VCC (December, 2014, Version 1.5) 39 AMIC Technology Corp. A25L032 Series Table 14. AC Characteristics Symbol Alt. fC fC fR tCH 1 tCLH tCL 1 tCLL Parameter Min. Typ. Max. Unit Clock Frequency for all instructions, except READ (03h) D.C. 100 MHz Clock Frequency for READ (03h) instruction D.C. 65 MHz Clock High Time 5 5 ns tCLCH 2 Clock Rise Time3 (peak to peak) 0.1 V/ns tCHCL 2 Clock Fall Time3 (peak to peak) 0.1 V/ns S Active Setup Time (relative to C) 5 ns S Not Active Hold Time (relative to C) 5 ns tSLCH tCSS tCHSL Clock Low Time ns tDVCH tDSU Data In Setup Time 3 ns tCHDX tDH Data In Hold Time 3 ns tCHSH S Active Hold Time (relative to C) 5 ns tSHCH S Not Active Setup Time (relative to C) 5 ns 30 ns tSHSL tCSH S Deselect Time tSHQZ 2 tDIS Output Disable Time 7 ns tCLQV tV Clock Low to Output Valid 7 ns tCLQX tHO Output Hold Time 0 ns tHLCH HOLD Setup Time (relative to C) 5 ns tCHHH HOLD Hold Time (relative to C) 5 ns tHHCH HOLD Setup Time (relative to C) 5 ns tCHHL HOLD Hold Time (relative to C) 5 ns tHHQX 2 tLZ HOLD to Output Low-Z 7 ns tHLQZ 2 tHZ HOLD to Output High-Z 7 ns tWHSL 4 tSHWL 4 tDP 2 Write Protect Setup Time 20 ns Write Protect Hold Time 100 ns S High to Deep Power-down Mode 3 s tRES1 2 S High to Standby Mode without Electronic Signature Read 1 s tRES2 2 S High to Standby Mode with Electronic Signature Read 1 s tW Write Status Register Cycle Time 5 20 ms Page Program Cycle Time 2 6 ms Program OTP Cycle Time 2 3 ms tSE Sector Erase Cycle Time 80 200 ms tBE Block Erase Cycle Time 0.5 2 s tCE Chip Erase Cycle Time of A25L032 32 64 s tpp Note: 1. tCH + tCL must be greater than or equal to 1/ fC 2. Value guaranteed by characterization, not 100% tested in production. 3. Expressed as a slew-rate. 4. Only applicable as a constraint for WRSR instruction when Status Register Protect bits (SRP1, SRP0) = (0, 1) (December, 2014, Version 1.5) 40 AMIC Technology Corp. A25L032 Series Figure 28. Serial Input Timing tSHSL S tCHSL tSLCH tCHSH C tCHCL tDVCH tCLCH tCHDX DI DO tSHCH MSB IN LSB IN High Impedance Figure 29. Write Protect Setup and Hold Timing during WRSR when (SRP1, SRP0) = (0, 1) W tSHWL tWHSL S C DI DO (December, 2014, Version 1.5) High Impedance 41 AMIC Technology Corp. A25L032 Series Figure 30. Hold Timing S tHLCH tHHCH tCHHL C tCHHH DI tHLQZ tHHQX DO HOLD Figure 31. Output Timing S tCH C DI ADDR.LSB IN tCLQV tCLQX tCL tCLQV tSHQZ tCLQX DO LSB OUT tQLQH tQHQL (December, 2014, Version 1.5) 42 AMIC Technology Corp. A25L032 Series Part Numbering Scheme A25 X X XXX X X X X / X Packing Blank: for DIP8 G: for SOP8 In Tube Q: for Tape & Reel Package Material Blank: normal F: PB free Temperature* Blank = 0C ~ +70C U = -40C ~ +85C E = -40C ~ +85C (With AEC-Q100 Grade 3 Certification) Package Type Blank = DIP8 M = 209 mil SOP 8 Q4 = WSON 8 (6*5mm) Device Version* Device Density 512 = 512 Kbit (4KB uniform sectors) 010 = 1 Mbit (4KB uniform sectors) 020 = 2 Mbit (4KB uniform sectors) 040 = 4 Mbit (4KB uniform sectors) 080 = 8 Mbit (4KB uniform sectors) 016 = 16 Mbit (4KB uniform sectors) 032 = 32 Mbit (4KB uniform sectors) Quad SPI Operation Q = Support Quad SPI Operation Blank = Do not support Quad SPI Operation Device Voltage L = 2.7-3.6V Device Type A25 = AMIC Serial Flash * Optional (December, 2014, Version 1.5) 43 AMIC Technology Corp. A25L032 Series Ordering Information Part No. Speed (MHz) Active Read Current Max. (mA) Program/Erase Current Max. (mA) Standby Current Max. (A) Package A25L032-F 8 Pin Pb-Free DIP (300 mil) A25L032-UF 8 Pin Pb-Free DIP (300 mil) A25L032-EF 8 Pin Pb-Free DIP (300 mil) 8 Pin Pb-Free SOP (209mil) A25L032M-F A25L032M-UF 100 24 15 A25L032M-EF 15 8 Pin Pb-Free SOP (209mil) 8 Pin Pb-Free SOP (209mil) 8 Pin Pb-Free WSON (6*5mm) A25L032Q4-F Operating temperature range: -40C ~ +85C -U is for industrial operating temperature range: -40C ~ +85C -E is for industrial operating temperature range: -40C ~ +85C (With AEC-Q100 Grade 3 Certification) (December, 2014, Version 1.5) 44 AMIC Technology Corp. A25L032 Series Package Information unit: inches/mm P-DIP 8L Outline Dimensions Dimensions in inches Symbol Min Nom Max Dimensions in mm Min Nom Max 4.57 A - - 0.180 - - A1 0.015 - - 0.38 - - A2 0.128 0.130 0.136 3.25 3.30 3.45 B 0.014 0.018 0.022 0.36 0.46 0.56 B1 0.050 0.060 0.070 1.27 1.52 1.78 B2 0.032 0.039 0.046 0.81 0.99 1.17 C D 0.008 0.350 0.010 0.360 0.013 0.370 0.20 8.89 0.25 9.14 0.33 9.40 E 0.290 0.300 0.315 7.37 7.62 8.00 E1 0.254 0.260 0.266 6.45 6.60 6.76 e1 - 0.100 - - 2.54 - L 0.125 - - 3.18 - - EA 0.345 - 0.385 8.76 - 9.78 S 0.016 0.021 0.026 0.41 0.53 0.66 Notes: 1. Dimension D and E1 do not include mold flash or protrusions. 2. Dimension B1 does not include dambar protrusion. 3. Tolerance: 0.010" (0.25mm) unless otherwise specified. (December, 2014, Version 1.5) 45 AMIC Technology Corp. A25L032 Series Package Information unit: mm 5 1 4 E 8 E1 SOP 8L (209mil) Outline Dimensions C A2 A D GAGE PLANE SEATING PLANE A1 b 0.25 e L Dimensions in mm Symbol Min Nom Max A 1.75 1.95 2.16 A1 0.05 0.15 0.25 A2 1.70 1.80 1.91 0.48 b 0.35 0.42 C 0.19 0.20 0.25 D 5.13 5.23 5.33 E 7.70 7.90 8.10 E1 5.18 5.28 5.38 e 1.27 BSC L 0.50 0.65 0.80 0 - 8 Notes: Maximum allowable mold flash is 0.15mm at the package ends and 0.25mm between leads (December, 2014, Version 1.5) 46 AMIC Technology Corp. A25L032 Series Package Information unit: mm/mil 0.25 C WSON 8L (6 X 5 X 0.8mm) Outline Dimensions 1 0.25 C b 2 3 4 6 5 L 4 e 1 D2 D C0.30 Pin1 ID Area 5 8 8 E 7 E2 A3 A1 A // 0.10 C Seating Plane Symbol y C Dimensions in mm Dimensions in mil Min Nom Max Min Nom Max A 0.700 0.750 0.800 27.6 29.5 31.5 A1 0.000 0.020 0.050 0.0 0.8 2.0 A3 0.203 REF 8.0 REF b 0.350 0.400 0.480 13.8 15.8 18.9 D 5.900 6.000 6.100 232.3 236.2 240.2 141.7 D2 3.200 3.400 3.600 126.0 133.9 E 4.900 5.000 5.100 192.9 196.9 200.8 E2 3.800 4.000 4.200 149.6 157.5 165.4 L 0.500 0.600 0.750 19.7 23.6 29.5 0.080 0 1.270 BSC e y 0 - 50.0 BSC - 3.2 Note: 1. Controlling dimension: millimeters 2. Leadframe thickness is 0.203mm (8mil) (December, 2014, Version 1.5) 47 AMIC Technology Corp.