A25L032 Series
32Mbit Low Voltage, Dual-I/O Serial Flash Memory
with 100MHz Uniform 4KB Sectors
(December, 2014, Version 1.5) AMIC Technology Corp.
Document Title
32Mbit, Low Voltage, Dual-I/O Serial Flash Memory with 100MHz Uniform 4KB Sectors
Revision History
Rev. No. History Issue Date Remark
0.0 Initial issue August 18, 2008 Preliminary
0.1 Spec. change for new commands July 13, 2009
0.2 Add packing description in Part Numbering Scheme May 3, 2010
0.3 P31: Modify Read Device Identification July 27, 2010
P40: Remove the min. value of ICC1 and ICC2
0.4 P32: ID code error correction September 21, 2010
0.5 P39: Change Data Retention and Endurance value from Max. to Min. October 7, 2010
1.0 Change tPP, tSE, tBE and tCE data values May 26, 2011 Final
Final version release
1.1 P1: Add “Provide 64Bytes Security ID (application note is available September 19, 2011
by request)” in Features
1.2 Change tSE(typ.) from 150ms to 80ms November 15, 2011
Change tSE(max.) from 280ms to 200s
Change tBE(typ,) from 0.7s to 0.5s
Change tCE(typ,) from 40s to 32s
Add 8-pin WSON (6*5mm) package type
1.3 P40: Change ICC6 & ICC7(max.) from 15mA to 25ma March 29, 2012
1.4 Remove SOP 16L (300mil) package type May 15, 2014
1.5 P.1: Add “AEC-Q100 Grade 3 Certification” in FEATURES December 18, 2014
P.43 & P.44: Add –E grade specification
A25L032 Series
32Mbit Low Voltage, Dual-I/O Serial Flash Memory
with 100MHz Uniform 4KB Sectors
(December, 2014, Version 1.5) 1 AMIC Technology Corp.
FEATURES
Family of Serial Flash Memories
- A25L032: 32M-bit /4M-byte
Flexible Sector Architecture with 4KB sectors
- Sector Erase (4K-bytes) in 80ms (typical)
- Block Erase (64K-bytes) in 0.5s (typical)
Page Program (up to 256 Bytes) in 1.5ms (typical)
2.7 to 3.6V Single Supply Voltage
Dual input / output instructions resulting in an equivalent
clock frequency of 200MHz:
- FAST_READ_DUAL_OUTPUT Instruction
- FAST_READ_DUAL_INPUT_OUTPUT Instruction
- Dual Input Fast Program (DIFP) Instruction
SPI Bus Compatible Serial Interface
100MHz Clock Rate (maximum)
Deep Power-down Mode 15µA (Max.)
Advanced Protection Features
- Software and Hardware Write-Protect
- Top/Bottom, 4KB Complement Array Protection
Additional 64-byte user-lockable, one-time programmable
(OTP) area
32Mbit Flash memory
- Uniform 4-Kbyte Sectors
- Uniform 64-Kbyte Blocks
Electronic Signatures
- JEDEC Standard Two-Byte Signature
A25L032: (3016h)
- RES Instruction, One-Byte, Signature, for backward
compatibility
A25L032: (15h)
AEC-Q100 Grade 3 Certification
Package options
- 8-pin SOP (209mil), 8-pin DIP (300mil), or 8-pin WSON
(6*5mm)
- All Pb-free (Lead-free) products are RoHS compliant
Provide 64Bytes Security ID (application note is available by
request)
GENERAL DESCRIPTION
The A25L032 is 32M bit Serial Flash Memory, with advanced
write protection mechanisms, accessed by a high speed
SPI-compatible bus.
The memory can be programmed 1 to 256 bytes at a time,
using the Page Program instruction.
The memory is organized as 64 blocks, each containing 16
sectors. Each sector is composed of 16 pages. Each page is
256 bytes wide. Thus, the whole memory can be viewed as
consisting of 16,384 pages, or 4,194,304 bytes.
The whole memory can be erased using the Chip Erase
instruction, a block at a time, using Block Erase instruction, or a
sector at a time, using the Sector Erase instruction.
Pin Configurations
SOP8 / DIP8 Connections WSON8 Connections
VCC
C
S
W
HOLD
VSS
1 8
2 7
3 6
4 5
A25L032
DO (IO1)
DI (IO0)
VCC
C
S
W
HOLD
VSS
A25L032
1
2
3
4
8
7
6
5
DO (IO1)
DI (IO0)
A25L032 Series
(December, 2014, Version 1.5) 2 AMIC Technology Corp.
Pin Descriptions
Pin No. Pin Name I/O Description
1 S I Chip Select Input
2 DO (IO1) I/O Data Output (Data Input Output 1)(1)
3 W I Write Protect Input
4 VSS Ground
5 DI (IO0) I/O Data Input (Data Input Output 0) (1)
6 C I Serial Clock Input
7 HOLD I Hold Input
8 VCC Power Supply
Notes:
(1) IO0 and IO1 are used for Dual Instruction.
Block Diagram
I/O Shift Register
Control Logic High Voltage
Generator
Address register
and Counter
256 Byte
Data Buffer
Status
Register
X Decoder
256 Byte (Page Size)
Y Decoder
Size of the
memory area
DI (IO0)
DO (IO1)
C
000FFh00000h
HOLD
W
S
3FFFFF (32M)
64 OTP bytes
A25L032 Series
(December, 2014, Version 1.5) 3 AMIC Technology Corp.
PIN DESCRIPTION
Chip Select (S)
The SPI Chip Select ( S) pin enables and disables device
operation. When Chip Select ( S) is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1) pins
are at high impedance. When deselected, the devices power
consumption will be at standby levels unless an internal
erase, program or write status register cycle is in progress.
When Chip Select ( S) is brought low the device will be
selected, power consumption will increase to active levels
and instructions can be written to and data read from the
device. After power-up, Chip Select ( S) must transition from
high to low before a new instruction will be accepted.
Serial Data Input, Output and IOs (DI, DO and IO0, IO1)
The A25L032 support standard SPI and Dual SPI operation.
Standard SPI instructions use the unidirectional DI (input) pin
to serially write instructions, addresses or data to the device
on the rising edge of the Serial Clock (C) input pin. Standard
SPI also uses the unidirectional DO (output) to read data or
status from the device on the falling edge of Serial Clock (C).
Dual SPI instructions use the bidirectional IO pins to serially
write instructions, addresses or data to the device on the
rising edge of Serial clock (C) and read data or status from
the device on the falling edge of Serial Clock (C).
Write Protect (W)
The Write Protect ( W) pin can be used to prevent the Status
Register from being written. Used in conjunction with the
Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1
and BP0) bits and Status Register Protect (SRP1, SRP0) bits,
a portion or the entire memory array can be hardware
protected. The Write Protect ( W) pin is active low.
Hold (HOLD)
The Hold (HOLD ) pin allows the device to be paused while
it is actively selected. When Hold ( HOLD ) pin is brought low,
while Chip Select ( S) pin is low, the DO pin will be at high
impedance and signals on the DI and Serial Clock (C) pins
will be ignored (don’t care). When Hold ( HOLD ) pin is
brought high, device operation can resume. The Hold
function can be useful when multiple devices are sharing the
same SPI signals. The Hold (HOLD ) pin is active low.
Serial Clock (C)
The SPI Serial Clock Input (C) pin provides the timing for
serial input and output operations.
A25L032 Series
(December, 2014, Version 1.5) 4 AMIC Technology Corp.
SPI MODES
These devices can be driven by a microcontroller with its SPI
peripheral running in either of the two following modes:
– CPOL=0, CPHA=0
– CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising
edge of Serial Clock (C), and output data is available from the
falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 1,
is the clock polarity when the bus master is in Stand-by mode
and not transferring data:
– C remains at 0 for (CPOL=0, CPHA=0)
– C remains at 1 for (CPOL=1, CPHA=1)
Figure 1. SPI Modes Supported
MSB
MSB
C
C
DI
DO
00
11
CPOL CPHA
A25L032 Series
(December, 2014, Version 1.5) 5 AMIC Technology Corp.
SPI OPERATIONS
Standard SPI Instructions
The A25L032 is accessed through an SPI compatible bus
consisting of four signals: Serial Clock (C), Chip Select ( S),
Serial Data Input (DI), and Serial Data Output (DO). Standard
SPI instructions use the DI input pin to serially write
instructions, addresses or data to the device on the rising
edge of Serial Clock (C). The DO output pin is used to read
data or status from the device on the falling edge of Serial
Clock (C).
Dual SPI Instructions
The A25L032 supports Dual SPI operation when using the
“FAST_READ_DUAL_OUTPUT and FAST_READ_DUAL_
INPUT_OUTPUT” (3B and BB hex) instructions. These
instructions allow data to be transferred to or from the device
at two to three times the rate of ordinary Serial Flash devices.
The Dual Read instructions are ideal for quickly downloading
code to RAM upon power-up (code-shadowing) or for
executing non-speed-critical code directly from the SPI bus
(XIP). When using Dual SPI instructions the DI and DO pins
become bidirectional I/O pins; IO0 and IO1.
Hold Condition
The Hold ( HOLD ) signal is used to pause any serial
communications with the device without resetting the clocking
sequence. However, taking this signal Low does not
terminate any Write Status Register, Program or Erase cycle
that is currently in progress. The HOLD function is only
available for standard SPI and Dual SPI operation, not during
Quad SPI.
To enter the Hold condition, the device must be selected, with
Chip Select ( S) Low.
The Hold condition starts on the falling edge of the Hold
(HOLD ) signal, provided that this coincides with Serial Clock
(C) being Low (as shown in Figure 2.).
The Hold condition ends on the rising edge of the Hold
(HOLD ) signal, provided that this coincides with Serial Clock
(C) being Low.
If the falling edge does not coincide with Serial Clock (C)
being Low, the Hold condition starts after Serial Clock (C)
next goes Low. Similarly, if the rising edge does not coincide
with Serial Clock (C) being Low, the Hold condition ends after
Serial Clock (C) next goes Low. This is shown in Figure 2.
During the Hold condition, the Serial Data Output (DO) is high
impedance, and Serial Data Input (DI) and Serial Clock (C)
are Don’t Care.
Normally, the device is kept selected, with Chip Select ( S)
driven Low, for the whole duration of the Hold condition. This
is to ensure that the state of the internal logic remains
unchanged from the moment of entering the Hold condition.
If Chip Select ( S) goes High while the device is in the Hold
condition, this has the effect of resetting the internal logic of
the device. To restart communication with the device, it is
necessary to drive Hold (HOLD ) High, and then to drive Chip
Select ( S) Low. This prevents the device from going back to
the Hold condition.
Figure 2. Hold Condition Activation
Hold
Condition
(standard use)
HOLD
C
Hold
Condition
(non-standard use)
A25L032 Series
(December, 2014, Version 1.5) 6 AMIC Technology Corp.
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are required: Write
Enable (WREN), which is one byte, and a Page Program (PP)
sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction
allows up to 256 bytes to be programmed at a time (changing
bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
Dual Input Fast Program
The Dual Input Fast Program (DIFP) instruction makes it
possible to program up to 256 bytes using two input pins at
the same time (by changing bits from 1 to 0).
For optimized timings, it is recommended to use the Dual
Input Fast Program (DIFP) instruction to program all
consecutive targeted bytes in a single sequence rather to
using several Dual Input Fast Program (DIFP) sequences
each containing only a few bytes.
Sector Erase, Block Erase, and Chip Erase
The Page Program (PP) instruction and Dual Input Fast
Program (DIFP) instruction allow bits to be reset from 1 to 0.
Before this can be applied, the bytes of memory need to have
been erased to all 1s (FFh). This can be achieved, a sector at
a time, using the Sector Erase (SE) instruction, a block at a
time, using the Block Erase (BE) instruction, or throughout the
entire memory, using the Chip Erase (CE) instruction. This
starts an internal Erase cycle (of duration tSE, tBE, or tCE).
The Erase instruction must be preceded by a Write Enable
(WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register
(WRSR), Program OTP (POTP), Program (PP, DIFP), or
Erase (SE, BE, or CE) can be achieved by not waiting for the
worst case delay (tW, tPP, tSE, tBE, tCE). The Write In Progress
(WIP) bit is provided in the Status Register so that the
application program can monitor its value, polling it to
establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
Active Power, Stand-by Power and Deep Power-Down
Modes
When Chip Select ( S) is Low, the device is enabled, and in
the Active Power mode.
When Chip Select ( S) is High, the device is disabled, but
could remain in the Active Power mode until all internal cycles
have completed (Program, Erase, Write Status Register). The
device then goes in to the Stand-by Power mode. The device
consumption drops to ICC1.
The Deep Power-down mode is entered when the specific
instruction (the Deep Power-down Mode (DP) instruction) is
executed. The device consumption drops further to ICC2. The
device remains in this mode until another specific instruction
(the Release from Deep Power-down Mode and Read
Electronic Signature (RES) instruction) is executed.
All other instructions are ignored while the device is in the
Deep Power-down mode. This can be used as an extra
software protection mechanism, when the device is not in
active use, to protect the device from inadvertent Write,
Program or Erase instructions.
Status Register
The Status Register contains a number of status and control
bits that can be read or set (as appropriate) by specific
instructions. See Read Status Register (RDSR) for a detailed
description of the Status Register bits.
Protection Modes
The environments where non-volatile memory devices are
used can be very noisy. No SPI device can operate correctly
in the presence of excessive noise. To help combat this, the
A25L032 boasts the following data protection mechanisms:
Power-On Reset and an internal timer (tPUW) can provide
protection against inadvertent changes while the power
supply is outside the operating specification.
Program, Erase and Write Status Register instructions are
checked that they consist of a number of clock pulses that
is a multiple of eight, before they are accepted for
execution.
All instructions that modify data must be preceded by a
Write Enable (WREN) instruction to set the Write Enable
Latch (WEL) bit. This bit is returned to its reset state by
the following events:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Program OTP (POTP) instruction completion
- Page Program (PP) instruction completion
- Dual Input Fast Program (DIFP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE) instruction completion
- Chip Erase (CE) instruction completion
The Block Protect (BP2, BP1, BP0) bits conjunction with
Sector Protect (SEC) bit , Top/Bottom (TB) bit and
Complement Protect (CMP) bit allow part of the memory to
be configured as read-only. This is the Software Protected
Mode (SPM).
The Write Protect ( W) signal allows the Block Protect
(BP2, BP1, BP0) bits, Sector Protect (SEC) bit,
Top/Bottom (TB) bit, All Protect (APT), Complement
Protect (CMP) bit and Status Register Protect (SRP1,
SRP0) bits to be protected. This is the Hardware
Protected Mode (HPM).
In addition to the low power consumption feature, the
Deep Power-down mode offers extra software protection
from inadvertent Write, Program and Erase instructions, as
all instructions are ignored except one particular instruction
(the Release from Deep Power-down instruction).
A25L032 Series
(December, 2014, Version 1.5) 7 AMIC Technology Corp.
Table 1-1. Protected Area Sizes (CMP=0)
A25L032
Status Register Content (32M-Bit) Memory Protection
SEC TB BP2 BP1 BP0 Block(s) Addresses Density(Byte) Portion
X X 0 0 0 None None None None
0 0 0 0 1 63 3F0000h – 3FFFFFh 64KB Upper 1/64
0 0 0 1 0 62 – 63 3E0000h – 3FFFFFh 128KB Upper 1/32
0 0 0 1 1 60 – 63 3C0000h – 3FFFFFh 256KB Upper 1/16
0 0 1 0 0 56 – 63 380000h – 3FFFFFh 512KB Upper 1/8
0 0 1 0 1 48 – 63 300000h – 3FFFFFh 1MB Upper 1/4
0 0 1 1 0 32 – 63 200000h – 3FFFFFh 2MB Upper 1/2
0 1 0 0 1 0 000000h – 00FFFFh 64KB Lower 1/64
0 1 0 1 0 0 – 1 000000h – 01FFFFh 128KB Lower 1/32
0 1 0 1 1 0 – 3 000000h – 03FFFFh 256KB Lower 1/16
0 1 1 0 0 0 – 7 000000h – 07FFFFh 512KB Lower 1/8
0 1 1 0 1 0 – 15 000000h – 0FFFFFh 1MB Lower 1/4
0 1 1 1 0 0 – 31 000000h – 1FFFFFh 2MB Lower 1/2
X X 1 1 1 0 – 63 000000h – 3FFFFFh 4MB ALL
1 0 0 0 1 63 3FF000h – 3FFFFFh 4KB Top Block
1 0 0 1 0 63 3FE000h – 3FFFFFh 8KB Top Block
1 0 0 1 1 63 3FC000h – 3FFFFFh 16KB Top Block
1 0 1 0 X 63 3F8000h – 3FFFFFh 32KB Top Block
1 0 1 1 0 63 3F0000h – 3FFFFFh 64KB Top Block
1 1 0 0 1 0 000000h – 000FFFh 4KB Bottom Block
1 1 0 1 0 0 000000h – 001FFFh 8KB Bottom Block
1 1 0 1 1 0 000000h – 003FFFh 16KB Bottom Block
1 1 1 0 X 0 000000h – 007FFFh 32KB Bottom Block
1 1 1 1 0 0 000000h – 00FFFFh 64KB Bottom Block
Note:
1. X = don’t care
2. When CMP is 0, the device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) bits
are 0.
A25L032 Series
(December, 2014, Version 1.5) 8 AMIC Technology Corp.
Table 1-2. Protected Area Sizes (CMP=1)
A25L032
Status Register Content (32M-Bit) Memory Protection
SEC TB BP2 BP1 BP0 Block(s) Addresses Density(Byte) Portion
X X 0 0 0 0 - 63 000000h – 3FFFFFh 4MB All
0 0 0 0 1 0 - 62 000000h – 3EFFFFh 4032KB Lower 63/64
0 0 0 1 0 0 – 61 000000h – 3DFFFFh 3968KB Lower 31/32
0 0 0 1 1 0 – 59 000000h – 3BFFFFh 3840KB Lower 15/16
0 0 1 0 0 0 – 55 000000h – 37FFFFh 3584KB Lower 7/8
0 0 1 0 1 0 – 47 000000h – 2FFFFFh 3MB Lower 3/4
0 0 1 1 0 0 – 31 000000h – 1FFFFFh 2MB Lower 1/2
0 1 0 0 1 1 - 63 010000h – 3FFFFFh 4032KB Upper 63/64
0 1 0 1 0 2 - 63 020000h – 3FFFFFh 3968KB Upper 31/32
0 1 0 1 1 4 - 63 040000h – 3FFFFFh 3840KB Upper 15/16
0 1 1 0 0 8 - 63 080000h – 3FFFFFh 3584KB Upper 7/8
0 1 1 0 1 16 - 63 100000h – 3FFFFFh 3MB Upper 3/4
0 1 1 1 0 32 - 63 200000h – 3FFFFFh 2MB Upper 1/2
X X 1 1 1 None None None None
1 0 0 0 1 0 - 62 000000h – 3FEFFFh 4092KB Lower 1023/1024
1 0 0 1 0 0 - 62 000000h – 3FDFFFh 4088KB Lower 511/512
1 0 0 1 1 0 - 62 000000h – 3FBFFFh 4080KB Lower 255/256
1 0 1 0 X 0 - 62 000000h – 3F7FFFh 4064KB Lower 127/128
1 0 1 1 0 0 - 62 000000h – 3EFFFFh 4032KB Lower 63/64
1 1 0 0 1 1 – 63 001000h – 3FFFFFh 4092KB Upper 1023/1024
1 1 0 1 0 1 – 63 002000h – 3FFFFFh 4088KB Upper 511/512
1 1 0 1 1 1 – 63 004000h – 3FFFFFh 4080KB Upper 255/256
1 1 1 0 X 1 – 63 008000h – 3FFFFFh 4064KB Upper 127/128
1 1 1 1 0 1 - 63 010000h – 3FFFFFh 4032KB Upper 63/64
Note:
1. X = don’t care
2. When CMP is 1, the device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) bits
are 1.
A25L032 Series
(December, 2014, Version 1.5) 9 AMIC Technology Corp.
MEMORY ORGANIZATION
The memory is organized as:
4,194,304 bytes (8 bits each)
64 blocks (64 Kbytes each)
1024 sectors (4 Kbytes each)
16384 pages (256 bytes each)
64 bytes OTP located outside the main memory array
Each page can be individually programmed (bits are
programmed from 1 to 0). The device is Sector, Block, or Chip
Erasable (bits are erased from 0 to 1) but not Page Erasable.
Table 2. Memory Organization
A25L032 Address T able
Block Sector Address range
1023 3FF000h 3FFFFFh
...
...
...
63 1008 3F0000h 3F0FFFh
1007 3EF000h 3EFFFFh
...
...
...
62
992 3E0000h 3E0FFFh
….
……
……
……
463 1CF000h 1CFFFFh
...
...
...
28
448 1C0000h 1C0FFFh
447 1BF000h 1BFFFFh
...
...
...
27
432 1B0000h 1B0FFFh
431 1AF000h 1AFFFFh
...
...
...
26
416 1A0000h 1A0FFFh
415 19F000h 19FFFFh
...
...
...
25
400 190000h 190FFFh
399 18F000h 18FFFFh
...
...
...
24
384 180000h 180FFFh
383 17F000h 17FFFFh
...
...
...
23
368 170000h 170FFFh
367 16F000h 16FFFFh
...
...
...
22
352 160000h 160FFFh
351 15F000h 15FFFFh
...
...
...
21
336 150000h 150FFFh
Block Sector Address range
335 14F000h 14FFFFh
...
...
...
20
320 140000h 140FFFh
319 13F000h 13FFFFh
...
...
...
19
304 130000h 130FFFh
303 12F000h 12FFFFh
...
...
...
18
288 120000h 120FFFh
287 11F000h 11FFFFh
...
...
...
17
272 110000h 110FFFh
271 10F000h 10FFFFh
...
...
...
16
256 100000h 100FFFh
255 FF000h FFFFFh
...
...
...
15
240 F0000h F0FFFh
239 EF000h EFFFFh
...
...
...
14
224 E0000h E0FFFh
223 DF000h DFFFFh
...
...
...
13
208 D0000h D0FFFh
207 CF000h CFFFFh
...
...
...
12
192 C0000h C0FFFh
191 BF000h BFFFFh
...
...
...
11
176 B0000h B0FFFh
175 AF000h AFFFFh
...
...
...
10
160 A0000h A0FFFh
A25L032 Series
(December, 2014, Version 1.5) 10 AMIC Technology Corp.
Memory Organization (continued)
Block Sector Address range
159 9F000h 9FFFFh
...
...
...
9
144 90000h 90FFFh
143 8F000h 8FFFFh
...
...
...
8
128 80000h 80FFFh
127 7F000h 7FFFFh
...
...
...
7
112 70000h 70FFFh
111 6F000h 6FFFFh
...
...
...
6
96 60000h 60FFFh
95 5F000h 5FFFFh
...
...
...
5
80 50000h 50FFFh
79 4F000h 4FFFFh
...
...
...
4
64 40000h 40FFFh
Block Sector Address range
63 3F000h 3FFFFh
...
...
...
3
48 30000h 30FFFh
47 2F000h 2FFFFh
...
...
...
2
32 20000h 20FFFh
31 1F000h 1FFFFh
...
...
...
1
16 10000h 10FFFh
15 0F000h 0FFFFh
...
...
...
4 04000h 04FFFh
3 03000h 03FFFh
2 02000h 02FFFh
1 01000h 01FFFh
0
0 00000h 00FFFh
A25L032 Series
(December, 2014, Version 1.5) 11 AMIC Technology Corp.
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of
the device, most significant bit first.
Serial Data Input(s) IO0 (IO1) is (are) sampled on the first
rising edge of Serial Clock (C) after Chip Select ( S) is driven
Low. Then, the one-byte instruction code must be shifted in to
the device, most significant bit first, on Serial Data Input(s) IO0
(IO1), each bit being latched on the rising edges of Serial
Clock (C).
The instruction set is listed in Table 3.
Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by
address bytes, or by data bytes, or by dummy bytes (don’t
care), or by a combination or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at
Higher Speed (Fast_Read), Read Data Bytes at Higher Speed
by Dual Output (FAST_READ_DUAL_OUTPUT), Read Data
Bytes at Higher Speed by Dual Input and Dual Output
(FAST_READ_DUAL_INPUT_OUTPUT), Read OTP (ROTP),
Read Identification (RDID), Read Electronic Manufacturer and
Device Identification (REMS), Read Status Register (RDSR)
or Release from Deep Power-down, Read Device
Identification and Read Electronic Signature (RES) instruction,
the shifted-in instruction sequence is followed by a data-out
sequence. Chip Select ( S) can be driven High after any bit of
the data-out sequence is being shifted out.
In the case of a Page Program (PP), Program OTP (POTP),
Dual Input Fast Program (DIFP), Sector Erase (SE), Block
Erase (BE), Chip Erase (CE), Write Status Register (WRSR),
Write Enable (WREN), Write Disable (WRDI) or Deep
Power-down (DP) instruction, Chip Select ( S) must be driven
High exactly at a byte boundary, otherwise the instruction is
rejected, and is not executed. That is, Chip Select ( S) must
driven High when the number of clock pulses after Chip Select
(S) being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write Status
Register cycle, Program cycle or Erase cycle are ignored, and
the internal Write Status Register cycle, Program cycle or
Erase cycle continues unaffected.
A25L032 Series
(December, 2014, Version 1.5) 12 AMIC Technology Corp.
Table 3. Instruction Set
Instruction Description One-byte
Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN Write Enable 0000 0110 06h 0 0 0
WRDI Write Disable 0000 0100 04h 0 0 0
RDSR-1 Read Status Register-1 0000 0101 05h 0 0 1 to ∞
RDSR-2 Read Status Register-2 0011 0101 35h 0 0 1 to ∞
WRSR Write Status Register 0000 0001 01h 0 0 2
READ Read Data Bytes 0000 0011 03h 3 0 1 to ∞
FAST_READ Read Data Bytes at Higher Speed 0000 1011 0Bh 3 1 1 to ∞
FAST_READ_DUAL
_OUTPUT
Read Data Bytes at Higher Speed by
Dual Output (1) 0011 1011 3Bh 3 1 1 to ∞(1)
FAST_READ_DUAL
_INPUT_OUTPUT
Read Data Bytes at Higher Speed by
Dual Input and Dual Output (1)(2) 1011 1011 BBh 3(2) 1
(2) 1 to ∞(1)
ROTP Read OTP (Read 64 bytes of OTP
area) 0100 1011 4Bh or 48h 3 1 1 to ∞
POTP Program OTP (Program 64 bytes of
OTP area) 0100 0010 42h 3 0 1 to 64
PP Page Program 0000 0010 02h 3 0 1 to 256
DIFP Dual Input Fast Program 1010 0010 A2h 3 0 1 to 256(3)
SE Sector Erase 0010 0000 20h 3 0 0
BE Block Erase 1101 1000 D8h or 52h 3 0 0
CE Chip Erase 1100 0111 C7h or 60h 0 0 0
DP Deep Power-down 1011 1001 B9h 0 0 0
RDID Read Device Identification 1001 1111 9Fh 0 0 1 to ∞
REMS Read Electronic Manufacturer & Device
Identification 1001 0000 90h 1(4) 2 1 to ∞
Release from Deep Power-down, and
Read Electronic Signature 0 3 1 to ∞
RES
Release from Deep Power-down
1010 1011 ABh
0 0 0
HPM High Performance Mode 1010 0011 A3h 0 3 0
Continuous Read
Mode Reset(5) Reset Mode Bit M<4> to 1 1111 1111
1111 1111 FFFFh 0 0 0
Note: (1) Dual Output Data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
(2) Dual Input Address
IO0 = (A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0)
IO1 = (A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3, M1)
(3) Dual Input Fast Program Input Data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
(4) ADD= (00h) will output manufacturer’s ID first and ADD=(01h) will output device ID first
(5) This instruction is recommended when using the Dual “Continuous Read Mode” features. See page 22 for
more information.
A25L032 Series
(December, 2014, Version 1.5) 13 AMIC Technology Corp.
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 3.) sets the
Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every
Page Program (PP), Dual Input Fast Program (DIFP),
Program OTP (POTP), Sector Erase (SE), Block Erase (BE),
and Chip Erase (CE) and Write Status Register (WRSR)
instruction.
The Write Enable (WREN) instruction is entered by driving
Chip Select ( S) Low, sending the instruction code, and then
driving Chip Select ( S) High.
Figure 3. Write Enable (WREN) Instruction Sequence
S
C
DI
DO High Impedance
Instruction (06h)
01 23 45 67
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 4.) resets the
Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip
Select ( S) Low, sending the instruction code, and then driving
Chip The Write Enable Latch (WEL) bit is reset under the
following conditions:
﹣ Power-up
﹣ Write Disable (WRDI) instruction completion
﹣ Write Status Register (WRSR) instruction completion
﹣ Page Program (PP) instruction completion
﹣ Dual Input Fast Program (DIFP) instruction completion
﹣ Program OTP (POTP) instruction completion
﹣ Sector Erase (SE) instruction completion
﹣ Block Erase (BE) instruction completion
﹣ Chip Erase (CE) instruction completion
Figure 4. Write Disable (WRDI) Instruction Sequence
S
C
DI
DO High Impedance
Instruction (04h)
01 23 45 67
A25L032 Series
(December, 2014, Version 1.5) 14 AMIC Technology Corp.
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the
Status Register to be read. The instruction code of “05h” is
for Status Register-1 and “35h” is for Status Register-2. The
Status Register may be read at any time, even while a
Program, Erase or Write Status Register cycle is in progress.
When one of these cycles is in progress, it is recommended
to check the Write In Progress (WIP) bit before sending a
new instruction to the device. It is also possible to read the
Status Register continuously, as shown in Figure 5.
Table 4-a Status Register-1 Format
SRP0 SEC BP2 BP1 BP0 WEL WIP
Status Register Protect 0
(Non-volatile)
Block Protect Bits
(Non-volatile)
Write Enable Latch Bit
Write In Progress Bit
b0b7
TB
b6 b5 b4 b3 b2 b1
Top/Bottom Bit
(Non-volatile)
Sector Protect
(Non-volatile)
Table 4-b Status Register-2 Format
0CMP 0 0 APT 0SRP1
All Protect (Non-volatile)
Status Register Protect 1
(Non-volatile)
b8b15
0
b14 b13 b12 b11 b10 b9
Reserved
Reserved
Complement Protect
(Non-volatile)
Reserved
The status and control bits of the Status Register are as
follows:
WIP bit. The Write In Progress (WIP) bit is a read only bit in
the status register (b0) that is set to a 1 state when the
device is busy with a Write Status Register, Program or
Erase cycle. During this time the device will ignore further
instructions except for the Read Status Register instruction
(see tW, tPP, tSE, tBE, and tCE in AC Characteristics). When the
program, erase, or write status register instruction has
completed, the WIP bit will be cleared to a 0 state indicating
the device is ready for further instructions.
WEL bit. The Write Enable Latch (WEL) bit is a read only bit
in the status register (b1) that is set to a 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to a 0
when the device is write disabled. A write disable state
occurs upon power-up or after any of the following
instructions: Write Disable, Page Program, Dual Input Fast
Program, Quad Input Fast Program, Sector Erase, Block
Erase, Chip Erase, and Write Status Register.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, and BP0)
bits are non-volatile read/write bits in the status register (b4,
b3, and b2) that provide Write Protection control and status.
Block Protect bits can be set using the Write Status Register
Instruction (see tW in AC characteristics). All, none or a
portion of the memory array can be protected from Program
and Erase instructions (see Table 1. Protected Area Sizes).
These bits can be set with the Write Status Register
Instruction depending on the state of the SRP1, SRP0, and
WEL bit. The factory default setting for the Block Protect Bits
is 0 which means none of the array protected. For value of
BP2, BP1, BP0 after power-on, see note please.
TB bit. The non-volatile Top/Bottom (TB) bit controls if the
Block Protect Bits (BP2, BP1, BP0) protect from the Top
(TB=0) or the Bottom (TB=1) of the array as shown in Table 1.
Protected Area Sizes. The factory default setting is TB=0.
The TB bit can be set with the Write Status Register
Instruction depending on the state of the SRP1, SRP0, and
WEL bit.
SEC bit. The non-volatile Sector Protect (SEC) bit in the
status register (b6) controls if the Block Protect Bits (BP2,
BP1, BP0) protect 4KB Sectors (SEC=1) or 64KB Blocks
(SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array
as shown in Table 1. Protected Area Sizes. This bit can be
set with the Write Status Register Instruction depending on
the state of the SRP1, SRP0, and WEL bit. The factory
default setting for SEC is 0.
SRP1, SRP0 bits. The Status Register Protect bits (SRP1
and SRP0) are non-volatile read/write bits in the status
register (b8 and b7). The SRP bits control the method of write
protection: software protection, hardware protection, or one
time programmable protection.
APT bit. The All Protect (APT) bit is a non-volatile read/write
bit in the status register (b10). Whole chip will be kept in
write-protect state after power-on if this bit is set to 1. This bit
can be set with the Write Status Register Instruction
depending on the state of the SRP1, SRP0, and WEL bit.
The factory default setting for APT is 0.
CMP bit. The Complement Protect (CMP) bit is a non-volatile
read/write bit in the status register (b14). It’s used in
conjunction with SEC, TB, BP2, BP1, BP0 bits to provide
more flexibility for the array protection. Once CMP is set to 1,
previous array protection set by SEC, TB, BP2, BP1 and BP0
will be reversed. Please refer to table 1 for more details. The
factory default setting for CMP is 0.
Note:
1. When APT is 0, BP2, BP1, BP0 won’t be changed after
power-on.
2. When APT is 1 and CMP is 0, all BP2, BP1, BP0 will be
set to 1 after power-on.
3. When APT is 1 and CMP is 1, all BP2, BP1, BP0 will be
set to 0 after power-on.
A25L032 Series
(December, 2014, Version 1.5) 15 AMIC Technology Corp.
Figure 5. Read Status Register (RDSR) Instruc tio n Sequence and Data-Out Sequence
01234
5
67
81091112
13 14 15
MSB MSB
Status Register 1 or 2 OutStatus Register 1 or 2 Out
High Impedance
Instruction (05h or 35h)
01234 567
01 2
345677
S
DI
DO
16 17 18 19 20 21 22 23
C
A25L032 Series
(December, 2014, Version 1.5) 16 AMIC Technology Corp.
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new
values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write Enable
(WREN) instruction has been decoded and executed, the
device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by
driving Chip Select ( S) Low, followed by the instruction
code and the data byte on Serial Data Input (DI).
The instruction sequence is shown in Figure 6. Only
non-volatile Status Register bits SRP0, SEC, TB, BP2, BP1,
BP0 (bits 7, 6, 5, 4, 3, 2 of Status Register-1) and CMP,
APT, SRP1 (bits 14, 10 and 8 of Status Register-2) can be
written. All other Status Register bits are always read as ‘0’
and will not be affected by the Write Status Register
instruction.
Chip Select ( S) must be driven High after the eighth or
sixteenth bit of the data byte has been latched in. If not, the
Write Status Register (WRSR) instruction is not executed.
If Chip Select ( S) is driven high after the eighth clock the
CMP, QE and SRP1 bits will be cleared to 0.
As soon as Chip Select ( S) is driven High, the self-timed
Write Status Register cycle (whose duration is tW) is initiated.
While the Write Status Register cycle is in progress, the
Status Register may still be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit
is 1 during the self-timed Write Status Register cycle, and is
0 when it is completed. When the cycle is completed, the
Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the
user to change the values of the Block Protect (APT, CMP,
SEC, TB, BP2, BP1, BP0) bits, to define the size of the area
that is to be treated as read-only, as defined in Table 1. The
Write Status Register (WRSR) instruction also allows the
user to set the Status Register Protect (SRP1, SRP0) bits.
Those bits are used in conjunction with the Write Protect
(W) pin to disable writes to the Status Register. Factory
default for all Status Register bits are 0.
Figure 6. Write Status Register (WRSR) Instruction Sequence
892
3
4
5
67
81091112
13 14 15
MSB
High Impedance
Instruction (01h)
01234567
01
S
16 17 18 19 20 21 22 23
Status Register In
C
15 14 13 12 11 10
DI
DO
Table 5. Protection Modes
SRP1 SRP0 W Status Register Description
0 0 X Software Protection
Status Register is Writable (if the WREN instruction has set the WEL
bit). The values in the CMP, APT, SRP1, SRP0, SEC, TB, BP2,
BP1, BP0 bits can be changed.
0 1 0 Hardware Protection
Status Register is hardware write protected. The values in the CMP,
APT, SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits cannot be
changed.
0 1 1 Software Protection
When W pin is high. Status Register is Writable (if the WREN
instruction has set the WEL bit). The values in the CMP, APT,
SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits can be changed.
1 1 X One Time Program
Status Register is permanently protected. The values in the CMP,
APT, SRP1, SRP0, SEC, TB, BP2, BP1, BP0 bits cannot be
changed.
A25L032 Series
(December, 2014, Version 1.5) 17 AMIC Technology Corp.
Read Data Bytes (READ)
The device is first selected by driving Chip Select ( S) Low.
The instruction code for the Read Data Bytes (READ)
instruction is followed by a 3-byte address (A23-A0), each bit
being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on
Serial Data Output (DO), each bit being shifted out, at a
maximum frequency fR, during the falling edge of Serial Clock
(C).
The instruction sequence is shown in Figure 7. The first byte
addressed can be at any location. The address is
automatically incremented to the next higher address after
each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ)
instruction. When the highest address is reached, the
address counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by
driving Chip Select ( S) High. Chip Select ( S) can be driven
High at any time during data output. Any Read Data Bytes
(READ) instruction, while an Erase, Program or Write cycle is
in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 7. Read Data Bytes (READ) Instruction Sequence and Data-Out Seq uence
S
C
DI
DO
Instruction (03h)
High Impedance
MSB
MSB
810901234567
Data Out 1 Data Out 2
24-Bit Address
28 29 30 31 32 33 34 35 36 37 38 39
23 22 21 3210
76 543210
7
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 18 AMIC Technology Corp.
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select ( S) Low.
The instruction code for the Read Data Bytes at Higher
Speed (FAST_READ) instruction is followed by a 3-byte
address (A23-A0) and a dummy byte, each bit being
latched-in during the rising edge of Serial Clock (C). Then the
memory contents, at that address, is shifted out on Serial
Data Output (DO), each bit being shifted out, at a maximum
frequency fC, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 8. The first byte
addressed can be at any location. The address is
automatically incremented to the next higher address after
each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher
Speed (FAST_READ) instruction. When the highest address
is reached, the address counter rolls over to 000000h,
allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ)
instruction is terminated by driving Chip Select ( S) High.
Chip Select ( S) can be driven High at any time during data
output. Any Read Data Bytes at Higher Speed (FAST_READ)
instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle
that is in progress.
Figure 8. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence an d Data-Out Sequence
Instruction (0Bh)
High Impedance
MSB
810901234567
24-Bit Address
28 29 30 31
23 22 21 3210
Data Out 1 Data Out 2
7
0
S
C
DI
DO
S
C
DI
DO
32 33 34 35 36 37 38 39
654 1
7 3
40 41 42 43 44 45 46 47
20
Dummy Byte
MSB
0
MSB
7654321
MSB
76543210
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 19 AMIC Technology Corp.
Read Data Bytes at Higher Speed by Dual Output (FAST_RE AD_DUAL_OUTPUT)
The FAST_READ_DUAL_OUTPUT (3Bh) instruction is
similar to the FAST_READ (0Bh) instruction except the data
is output on two pins, IO0 and IO1, instead of just DO. This
allows data to be transferred from the A25L032 at twice the
rate of standard SPI devices.
Similar to the FAST_READ instruction, the
FAST_READ_DUAL_OUTPUT instruction can operate at the
highest possible frequency of fC (See AC Characteristics).
This is accomplished by adding eight “dummy” clocks after
the 24-bit address as shown in figure 9. The dummy clocks
allow the device’s internal circuits additional time for setting
up the initial address. The input data during the dummy
clocks is “don’t care”. However, the IO0 and IO1 pins should
be high-impedance prior to the falling edge of the first data
out clock.
Figure 9. FAST_READ_DUAL_OUTPUT Instruction Sequence and Data-Out Sequence
Instruction (3Bh)
High Impedance
MSB
810901234567
24-Bit Address
28 29 30 31
23 22 21 3210
7
0
S
C
IO0
S
C
32 33 34 35 36 37 38 39
654 1
7 3
40 41 42 43 44 45 46 47
20
Dummy Byte
MSB
1
MSB
7531753
MSB
75317531
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
Data Out 1 Data Out 2 Data Out 3 Data Out 4
DIO switches from input to output
IO1
IO0
IO1
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 20 AMIC Technology Corp.
Read Data Bytes at Higher Speed by Dual Input and Dual Output (FAST_READ_DUAL_INPUT_OUTPUT)
The FAST_READ_DUAL_INPUT_OUTPUT (BBh) instruction
is similar to the FAST_READ (0Bh) instruction except the
data is input and output on two pins, IO0 and IO1, instead of
just DO. This allows data to be transferred from the A25L032
at twice the rate of standard SPI devices.
Similar to the FAST_READ instruction, the
FAST_READ_DUAL_INPUT_OUTPUT instruction can
operate at the highest possible frequency of fC (See AC
Characteristics). The FAST_READ_DUAL_INPUT_OUTPUT
instruction can further reduce instruction overhead through
setting the Mode bits (M7-0) after the input Address bits
(A23-0), as shown in Figure 10-a. The upper nibble of the
Mode (M7-4) bits controls the length of the next
FAST_READ_DUAL_INPUT_OUTPUT instruction through
the inclusion or exclusion of the first byte instruction code.
The lower nibble bits of the Mode (M3-0) bits are don’t care
(“x”). However, the IO pins should be high-impedance prior to
the falling edge of the first data out clock.
If the Mode bits (M5-4) equal “10” hex, then the chip is into
“Continuous Read” Mode and the next
FAST_READ_DUAL_INPUT_OUTPUT instruction (after S
is raised and then lowered) does not require the BBh
instruction code, as shown in figure 10-b. This reduces the
instruction sequence by eight clocks and allows the address
to be immediately entered after S is asserted low. If the
Mode bits (M5-4) are any value other than “10” hex, the next
instruction (after S is raised and then lowered) requires the
first byte instruction code, thus returning to normal operation.
Figure 10-a. FAST_READ_DUAL_INPUT_OUTPUT Instruction Sequence and Data-Out Sequence
(M5-4≠10h)
Instruction (BBh)
High Impedance
MSB
810901234567
24-Bit Address
16 17 18 19
22 20 18 6420
7
0
S
C
IO0
IO1
S
C
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
M7-0
MSB
1
MSB
7531753
MSB
75317531
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
Data Out 2 Data Out 3 Data Out 4 Data Out 5
DIO switches from input to output
21 19 5 3 1
23 7
6420
6 4 2 0
7531
MSB
Data Out 1
IO0
IO17 5 3 1
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 21 AMIC Technology Corp.
Figure 10-b. FAST_READ_DUAL_INPUT_OUTPUT Instruction Sequence and Data-Out Sequence
Continuous Read Mode, (M5-4=10h)
9111001234…
78
24-Bit Address
22 20 18 6420
7
0
S
C
IO0
IO1
S
C
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
M7-0
MSB
1
MSB
7531753
MSB
75317531
6420642064206420
Data Out 2 Data Out 3 Data Out 4 Data Out 5
DIO switches from input to output
21 19 53123 7
6 4 2 0
6 4 2 0
7531
MSB
Data Out 1
IO0
IO17 5 3 1
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 22 AMIC Technology Corp.
Read OTP (ROTP)
The device is first selected by driving Chip Select ( S) Low.
The instruction code for the Read OTP (ROTP) instruction is
followed by a 3-byte address (A23- A0) and a dummy byte.
Each bit is latched in on the rising edge of Serial Clock (C).
Then the memory contents at that address are shifted out on
Serial Data output (DO).
Each bit is shifted out at the maximum frequency, fC(Max.) on
the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 11.
The address is automatically incremented to the next higher
address after each byte of data is shifted out. When the
highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued
indefinitely.
The Read OTP (ROTP) instruction is terminated by driving
Chip Select ( S) High. Chip Select ( S) can be driven High at
any time during data output. Any Read OTP (ROTP)
instruction issued while an Erase, Program or Write Status
Register cycle is in progress, is rejected without having any
effect on the cycle that is in progress.
Figure 11. Read OTP (ROTP) instruction and data-out sequence
Instruction
(4Bh or 48h)
High Impedance
MSB
810901234567
24-Bit Address
28 29 30 31
23 22 21 3210
7
0
S
C
S
C
32 33 34 35 36 37 38 39
654 1
7 3
40 41 42 43 44 45 46 47
20
Dummy Byte
MSB
MSB
7654321
MSB
76543210
Data Out 1 Data Out n
0
DI
DO
DI
DO
Note: A23 to A6 are don’t care. (1 ≤ n ≤ 64)
A25L032 Series
(December, 2014, Version 1.5) 23 AMIC Technology Corp.
Program OTP (POTP)
The Program OTP instruction (POTP) is used to program at
most 64 bytes to the OTP memory area (by changing bits
from 1 to 0, only). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL) bit.
The Program OTP instruction is entered by driving Chip
Select ( S) Low, followed by the instruction code, three
address bytes and at least one data byte on Serial Data input
(DI).
Chip Select ( S) must be driven High after the eighth bit of
the last data byte has been latched in, otherwise the
Program OTP instruction is not executed.
The instruction sequence is shown in Figure 12.
As soon as Chip Select ( S) is driven High, the self-timed
Page Program cycle (whose duration is tPP) is initiated. While
the Program OTP cycle is in progress, the Status Register
may be read to check the value of the Write In Progress
(WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Program OTP cycle, and it is 0 when it is
completed. At some unspecified time before the cycle is
complete, the Write Enable Latch (WEL) bit is reset.
To lock the OTP memo ry:
Bit 0 of the OTP control byte, that is byte 63, (see Figure 12)
is used to permanently lock the OTP memory array.
• When bit 0 of byte 63 = ’1’, the OTP memory array can be
programmed.
• When bit 0 of byte 63 = ‘0’, the OTP memory array are
read-only and cannot be programmed anymore.
Once a bit of the OTP memory has been programmed to ‘0’,
it can no longer be set to ‘1’.
Therefore, as soon as bit 0 of address 63h (control byte) is
set to ‘0’, the 64 bytes of the OTP memory array become
read-only in a permanent way.
Any Program OTP (POTP) instruction issued while an Erase,
Program or Write Status Register cycle is in progress is
rejected without having any effect on the cycle that is in
progress.
Figure 12. Program OTP (POTP) instruction sequence
Instruction (42h)
MSB
810901234 567
24-Bit Address
28 29 30 31
23 22 21 3210
7
0
S
C
DI
S
C
DI
40 41 42 43 44 45 46 47
654 1
7 3
48 49 50 51 52 53 54 55
20
Data Byte 2
MSB
MSB
7654321
MSB
76543210
0
32 33 34 35 36 37 38 39
Data Byte 1
650
4210
0
73
MSB
Data Byte 3 Data Byte n
Note: A23 to A6 are don’t care. (1 ≤ n ≤ 64)
Figure 13. How to permanently lock the 64 OTP bytes
OTP Control Byte64 Data Byte
Bit
7
Bit
6
Bit
5
Bit
4
Bit
3
Bit
2
Bit
1
Bit
0
When bit 0 =0
the OTP bytes
become READ only
Byte
0
Byte
1
Byte
2
Byte
62
Byte
63
A25L032 Series
(December, 2014, Version 1.5) 24 AMIC Technology Corp.
Page Program (PP)
The Page Program (PP) instruction allows bytes to be
programmed in the memory (changing bits from 1 to 0).
Before it can be accepted, a Write Enable (WREN) instruction
must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip
Select ( S) Low, followed by the instruction code, three
address bytes and at least one data byte on Serial Data Input
(DI). If the 8 least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the
same page (from the address whose 8 least significant bits
(A7-A0) are all zero). Chip Select ( S) must be driven Low for
the entire duration of the sequence.
The instruction sequence is shown in Figure 14. If more than
256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be
programmed correctly within the same page. If less than 256
Data bytes are sent to device, they are correctly programmed
at the requested addresses without having any effects on the
other bytes of the same page.
Chip Select ( S) must be driven High after the eighth bit of the
last data byte has been latched in, otherwise the Page
Program (PP) instruction is not executed.
As soon as Chip Select ( S) is driven High, the self-timed
Page Program cycle (whose duration is tPP) is initiated. While
the Page Program cycle is in progress, the Status Register
may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed
Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1,
BP0) bits (see table 1) is not executed.
Figure 14. Page Program (PP) Instruction Sequence
S
C
DI
Instruction (02h)
MSB
810901234567
24-Bit Address
28 29 30 31 32 33 34 35 36 37 38 39
23 22 21 3210
Data Byte 1
MSB
765432103
Data Byte 256
5553 5452
Data Byte 3
51504948
47
46454443424140
Data Byte 2
0
MSB
7654321
MSB
76543210
MSB
76543210
S
C
DI
2072
2073
2074
2075
2076
2077
2078
2079
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 25 AMIC Technology Corp.
Dual Input Fast Program (DIFP)
The Dual Input Fast Program (DIFP) instruction is very
similar to the Page Program (PP) instruction, except that the
data are entered on two pins IO0 and IO1 instead of only one.
Inputting the data on two pins instead of one doubles the
data transfer bandwidth compared to the Page Program (PP)
instruction.
The Dual Input Fast Program (DIFP) instruction is entered by
driving Chip Select ( S) Low, followed by the instruction code,
three address bytes and at least one data byte on Serial
Data Output (IO0 and IO1).
If the 8 least significant address bits (A7-A0) are not all zero,
all transmitted data that goes beyond the end of the current
page are programmed from the start address of the same
page (from the address whose 8 least significant bits (A7-A0)
are all zero). Chip Select ( S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 15.
If more than 256 bytes are sent to the device, previously
latched data are discarded and the last 256 data bytes are
guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are
correctly programmed at the requested addresses without
having any effects on the other bytes in the same page.
For optimized timings, it is recommended to use the Dual
Input Fast Program (DIFP) instruction to program all
consecutive targeted bytes in a single sequence rather to
using several Dual Input Fast Program (DIFP) sequences
each containing only a few bytes.
Chip Select ( S) must be driven High after the eighth bit of
the last data byte has been latched in, otherwise the Dual
Input Fast Program (DIFP) instruction is not executed.
As soon as Chip Select ( S) is driven High, the self-timed
Page Program cycle (whose duration is tPP) is initiated. While
the Dual Input Fast Program (DIFP) cycle is in progress, the
Status Register may be read to check the value of the Write
In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Page Program cycle, and 0 when it is
completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
A Dual Input Fast Program (DIFP) instruction applied to a
page that is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, BP0) bits (see Table 1) is not executed.
Figure 15. Dual Input Fast Program (DIFP) instruction seque nce
Instruction (A2h)
High Impedance
MSB
810901234567
24-Bit Address
28 29 30 31
23 22 21 3210
0
S
C
IO0
IO1
S
C
IO0
IO1
32 33 34 35 36 37 38 39
420 2
6 6
40 41 42 43 44 45 46 47
40
MSB
MSB MSB
642064206420 6420
531 3
75 1753175317531 7531
7
MSB MSB MSB
Data In 1 Data In 2 Data In 3 Data In 4 Data In 5 Data In 256
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 26 AMIC Technology Corp.
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits
inside the chosen sector. Before it can be accepted, a Write
Enable (WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction has been
decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip
Select ( S) Low, followed by the instruction code on Serial
Data Input (DI). Chip Select ( S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 16. Chip Select
(S) must be driven High after the eighth bit of the instruction
code has been latched in, otherwise the Sector Erase
instruction is not executed. As soon as Chip Select ( S) is
driven High, the self-timed Sector Erase cycle (whose
duration is tSE) is initiated. While the Sector Erase cycle is in
progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Sector Erase cycle, and is
0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1,
BP0) bits (see table 1) is not executed.
Figure 16. Sector Erase (SE) Instruction Sequence
Instruction (20h)
MSB
810901234 567
24-Bit Address
28 29 30 31
23
S
C
DI 22 21 3210
0
23
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 27 AMIC Technology Corp.
Block Erase (BE)
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside
the chosen block. Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Block Erase (BE) instruction is entered by driving Chip
Select ( S) Low, followed by the instruction code on Serial
Data Input (DI). Chip Select ( S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 17. Chip Select
(S) must be driven High after the eighth bit of the instruction
code has been latched in, otherwise the Block Erase
instruction is not executed. As soon as Chip Select ( S) is
driven High, the self-timed Block Erase cycle (whose duration
is tBE) is initiated. While the Block Erase cycle is in progress,
the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit
is 1 during the self-timed Block Erase cycle, and is 0 when it
is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a page which is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1,
BP0) bits (see table 1) is not executed.
Figure 17. Block Erase (BE) Instruction Sequenc e
Instruction (D8h or 52h)
MSB
810901234 567
24-Bit Address
28 29 30 31
23
S
C
DI 22 21 3210
0
23
Note: Address bits A23 to A22 are Don’t Care, for A25L032.
A25L032 Series
(December, 2014, Version 1.5) 28 AMIC Technology Corp.
Chip Erase (CE)
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before
it can be accepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Chip Erase (CE) instruction is entered by driving Chip
Select ( S) Low, followed by the instruction code on Serial
Data Input (DI). Chip Select ( S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 18. Chip Select
(S) must be driven High after the eighth bit of the instruction
code has been latched in, otherwise the Chip Erase
instruction is not executed. As soon as Chip Select ( S) is
driven High, the self-timed Chip Erase cycle (whose duration
is tCE) is initiated. While the Chip Erase cycle is in progress,
the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is
1 during the self-timed Chip Erase cycle, and is 0 when it is
completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is ignored if one, or more,
sectors/blocks are protected.
Figure 18. Chip Erase (CE) Instruction Sequence
S
C
DI
1234567
0
Instruction
(C7h or 60h)
A25L032 Series
(December, 2014, Version 1.5) 29 AMIC Technology Corp.
Deep Powe r-down (D P)
Executing the Deep Power-down (DP) instruction is the only
way to put the device in the lowest consumption mode (the
Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in
active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select ( S) High deselects the device, and puts
the device in the Standby mode (if there is no internal cycle
currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be
entered by executing the Deep Power-down (DP) instruction,
to reduce the standby current (from ICC1 to ICC2, as specified in
DC Characteristics Table.).
Once the device has entered the Deep Power-down mode, all
instructions are ignored except the Release from Deep
Power-down and Read Electronic Signature (RES) instruction.
This releases the device from this mode. The Release from
Deep Power-down and Read Electronic Signature (RES)
instruction also allows the Electronic Signature of the device
to be output on Serial Data Output (DO).
The Deep Power-down mode automatically stops at
Power-down, and the device always Powers-up in the
Standby mode.
The Deep Power-down (DP) instruction is entered by driving
Chip Select ( S) Low, followed by the instruction code on
Serial Data Input (DI). Chip Select ( S) must be driven Low for
the entire duration of the sequence. The instruction sequence
is shown in Figure 19.
Chip Select ( S) must be driven High after the eighth bit of the
instruction code has been latched in, otherwise the Deep
Power-down (DP) instruction is not executed. As soon as
Chip Select ( S) is driven High, it requires a delay of tDP
before the supply current is reduced to ICC2 and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase,
Program or Write Status Register cycle is in progress, is
rejected without having any effects on the cycle that is in
progress.
Figure 19. Deep Power-down (DP) Instruction Sequence
S
C
DI
1234567
0
Instruction (B9h)
tDP
Stand-by Mode Deep Power-down Mode
A25L032 Series
(December, 2014, Version 1.5) 30 AMIC Technology Corp.
Read Device Identifica tion (R DID)
The Read Identification (RDID) instruction allows the 8-bit
manufacturer identification code to be read, followed by two
bytes of device identification. The manufacturer identification
is assigned by JEDEC, and has the value 37h. The device
identification is assigned by the device manufacturer, and
indicates the memory in the first byte (30h), and the memory
capacity of the device in the second byte (16h for A25L032).
Any Read Identification (RDID) instruction while an Erase, or
Program cycle is in progress, is not decoded, and has no
effect on the cycle that is in progress.
The device is first selected by driving Chip Select ( S) Low.
Then, the 8-bit instruction code for the instruction is shifted in.
This is followed by the 24-bit device identification, stored in
the memory, being shifted out on Serial Data Output (DO),
each bit being shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 20. The Read
Identification (RDID) instruction is terminated by driving Chip
Select ( S) High at any time during data output.
When Chip Select ( S) is driven High, the device is put in the
Stand-by Power mode. Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
Table 6. Read Identification (READ_ID) Data-Out Sequence
Manufacture Identification Device Identification
Manufacture ID Memory Type Memory Capacity
37h 30h 16h (A25L032)
Figure 20. Read Identification (RDID) Instruction Sequence and Data-Out Sequence
S
C
IO0
IO1
Instruction (9Fh)
High Impedance
810901 2 3 4 5 6 7 21 3022 23 24 25 26 29 31
Manufacture ID Memory Type
76 5 210
15 14 13 10 98
23 22 21 18 17 16
13 1514 16 17 18
Memory Capacity
A25L032 Series
(December, 2014, Version 1.5) 31 AMIC Technology Corp.
Read Electronic Manufacturer ID & Device ID (REMS)
The Read Electronic Manufacturer ID & Device ID (REMS)
instruction allows the 8-bit manufacturer identification code to
be read, followed by one byte of device identification. The
manufacturer identification is assigned by JEDEC, and has
the value 37h for AMIC. The device identification is assigned
by the device manufacturer, and has the value 15h for
A25L032.
Any Read Electronic Manufacturer ID & Device ID (REMS)
instruction while an Erase, or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in
progress.
The device is first selected by driving Chip Select ( S) Low.
The 8-bit instruction code is followed by 2 dummy bytes and
one byte address (A7~A0), each bit being latched-in on Serial
Data Input (DI) during the rising edge of Serial Clock (C).
If the one-byte address is set to 01h, then the device ID will
be read first and then followed by the Manufacturer ID. On
the other hand, if the one-byte address is set to 00h, then the
Manufacturer ID will be read first and then followed by the
device ID.
The instruction sequence is shown in Figure 21. The Read
Electronic Manufacturer ID & Device ID (REMS) instruction is
terminated by driving Chip Select ( S) High at any time during
data output.
When Chip Select ( S) is driven High, the device is put in the
Stand-by Power mode. Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
Table 7. Read Electronic Manufacturer ID & Device ID (REMS) Data-Out Sequence
Manufacture Identification Device Identification
37h 15h (A25L032)
Figure 21. Read Electronic Manufacturer ID & Device ID (REMS) Instruction Sequence and Data-Out Sequence
Instruction (90h)
High Impedance
MSB
810901234567
2 Dummy Bytes
20 21 22 23
15 14 13 3210
Manufacturer ID
0
S
C
DI
DO
S
C
DI
DO
24 25 26 27 28 29 30 31
654 1
7 3
32 33 34 35 36 37 38 39
20
ADD(1)
MSB
0
MSB
7654321
MSB
76543210
40 41 42 43 44 45 46 47
Device ID
Notes:
(1) ADD=00h will output the manufacturer ID first and ADD=01h will output device ID first
A25L032 Series
(December, 2014, Version 1.5) 32 AMIC Technology Corp.
Release from Deep Power-down and Read Electronic Signature (RES)
Once the device has entered the Deep Power-down mode,
all instructions are ignored except the Release from Deep
Power-down and Read Electronic Signature (RES)
instruction. Executing this instruction takes the device out of
the Deep Power-down mode.
The instruction can also be used to read, on Serial Data
Output (DO), the 8-bit Electronic Signature, whose value for
A25L032 is 15h.
Except while an Erase, Program or Write Status Register
cycle is in progress, the Release from Deep Power-down and
Read Electronic Signature (RES) instruction always provides
access to the 8-bit Electronic Signature of the device, and
can be applied even if the Deep Power-down mode has not
been entered.
Any Release from Deep Power-down and Read Electronic
Signature (RES) instruction while an Erase, Program or Write
Status Register cycle is in progress, is not decoded, and has
no effect on the cycle that is in progress.
The device is first selected by driving Chip Select ( S) Low.
The instruction code is followed by 3 dummy bytes, each bit
being latched-in on Serial Data Input (DI) during the rising
edge of Serial Clock (C). Then, the 8-bit Electronic Signature,
stored in the memory, is shifted out on Serial Data Output
(DO), each bit being shifted out during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 22.
The Release from Deep Power-down and Read Electronic
Signature (RES) instruction is terminated by driving Chip
Select ( S) High after the Electronic Signature has been read
at least once. Sending additional clock cycles on Serial Clock
(C), while Chip Select ( S) is driven Low, cause the
Electronic Signature to be output repeatedly.
When Chip Select ( S) is driven High, the device is put in the
Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by
Power mode is immediate. If the device was previously in the
Deep Power-down mode, though, the transition to the Stand-
by Power mode is delayed by tRES2, and Chip Select ( S)
must remain High for at least tRES2 (max), as specified in AC
Characteristics Table . Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
Figure 22. Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and
Data-Out Sequence
S
C
DI
DO
Instruction (ABh)
High Impedance
MSB
MSB
810901234567
3 Dummy Bytes
28 29 30 31 32 33 34 35 36 37 38
23 22 21 3210
6543210
7
tRES2
Stand-by ModeDeep Power-down Mode
Note: The value of the 8-bit Electronic Signature, for A25L032 is 15h.
A25L032 Series
(December, 2014, Version 1.5) 33 AMIC Technology Corp.
Figure 23. Release from Deep Power-down (RES) Instruction Sequence
S
C
DI
1234567
0
Instruction (ABh)
tRES1
High Impedance
DO
Stand-by ModeDeep Power-down Mode
Driving Chip Select ( S) High after the 8-bit instruction byte
has been received by the device, but before the whole of the
8-bit Electronic Signature has been transmitted for the first
time (as shown in Figure 23.), still insures that the device is
put into Stand-by Power mode. If the device was not pre-
viously in the Deep Power-down mode, the transition to the
Stand-by Power mode is immediate. If the device was
previously in the Deep Power-down mode, though, the
transition to the Stand-by Power mode is delayed by tRES1,
and Chip Select ( S) must remain High for at least tRES1 (max),
as specified in AC Characteristics Table. Once in the
Stand-by Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
A25L032 Series
(December, 2014, Version 1.5) 34 AMIC Technology Corp.
High Performance Mode (A3h)
The High Performance Mode (HPM) instruction can be
executed prior to Dual instructions if chip is operated at high
frequencies. This instruction allows pre-charging of internal
charge pumps so the voltages required for accessing the
Flash memory array are readily available. The instruction
sequence includes the A3h instruction code followed by three
dummy byte clocks shown in Fig.28. After the HPM
instruction is executed, the device will maintain a slightly
higher standby current than standard SPI operation. The
Release from Power-down (ABh) can be used to return to
standard SPI standby current (ICC1). In addition, Write Enable
instruction (06h) and Power Down instruction (B9h) will also
release the device from HPM mode back to standard SPI
standby state.
Figure 24. High Performance Mode Instruction Sequence
Instruction (A3)
MSB
810901234567
3 Dummy Bytes
28 29 30 31
23 22 21 3210
0
S
C
tRES2
High Performance
Current
DI
DO
A25L032 Series
(December, 2014, Version 1.5) 35 AMIC Technology Corp.
Continuous Read Mode Reset (FFFFh)
Continuous Read Mode Reset instruction can be used to set
mode bit M4 to 1, thus the device will release the Continuous
Read Mode and return to normal SPI operation, as shown in
Fig.29.
If user wants to issue a new command after A25L032 is set
to Continuous Mode Read, it is recommended to issue a
Continuous Read Mode Reset instruction before any
command. Doing so will release the device from the
Continuous Read Mode and allow Standard SPI instructions
to be recognized.
To reset “Continuous Read Mode” during Dual I/O operation,
sixteen clocks are needed to shift in instruction “FFFFh”.
Mode bit M5, M4 will be reset to 0 after power-on, so it’s
unnecessary to issue Continuous Read Mode Reset
instruction even the controller resets while A25L032 is set to
Continuous Mode Read.
Figure 25. Continuous Read Mode Reset for Fast Read Dual I/O
S
C
01234567 891011 12 13 14 15 16
Do not care
Do not care
Do not care
FFh FFh
Mode Bit Reset for Dual I/O
I/O0
I/O1
I/O2
I/O3
A25L032 Series
(December, 2014, Version 1.5) 36 AMIC Technology Corp.
POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must not be
selected (that is Chip Select ( S) must follow the voltage
applied on VCC) until VCC reaches the correct value:
VCC (min) at Power-up, and then for a further delay of tVSL
VSS at Power-down
Usually a simple pull-up resistor on Chip Select ( S) can be
used to insure safe and proper Power-up and Power-down.
To avoid data corruption and inadvertent write operations
during power up, a Power On Reset (POR) circuit is included.
The logic inside the device is held reset while VCC is less than
the POR threshold value, VWI – all operations are disabled,
and the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN),
Program OTP (POTP), Page Program (PP), Dual Input Fast
Program (DIFP), Sector Erase (SE), Block Erase (BE), Chip
Erase (CE) and Write Status Register (WRSR) instructions
until a time delay of tPUW has elapsed after the moment that
VCC rises above the VWI threshold. However, the correct
operation of the device is not guaranteed if, by this time, VCC
is still below VCC(min). No Write Status Register, Program or
Erase instructions should be sent until the later of:
tPUW after VCC passed the VWI threshold
- tVSL afterVCC passed the VCC(min) level
These values are specified in Table 8.
If the delay, tVSL, has elapsed, after VCC has risen above
VCC(min), the device can be selected for Read instructions
even if the tPUW delay is not yet fully elapsed.
At Power-up, the device is in the following state:
The device is in the Standby mode (not the Deep
Power-down mode).
The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail decoupling,
to stabilize the VCC feed. Each device in a system should
have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of
0.1µF).
At Power-down, when VCC drops from the operating voltage,
to below the POR threshold value, VWI, all operations are
disabled and the device does not respond to any instruction.
(The designer needs to be aware that if a Power-down occurs
while a Write, Program or Erase cycle is in progress, some
data corruption can result.)
Figure 26. Power-up Timing
time
VCC
VCC(max)
VCC(min)
tPUW
Full Device Access
VWI
tVSL Read
Access
allowed
Reset
State
A25L032 Series
(December, 2014, Version 1.5) 37 AMIC Technology Corp.
Table 8. Power-Up Timing
Symbol Parameter Min. Max. Unit
tVSL VCC(min) to S Low 10 μs
tPUW Time Delay Before Write Instruction 3 ms
VWI Write Inhibit Threshold Voltage 2.3 2.5 V
Note: These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains
00h (all Status Register bits are 0).
A25L032 Series
(December, 2014, Version 1.5) 38 AMIC Technology Corp.
Absolute Maximum Ratings*
Storage Temperature (TSTG) . . . . . . . . . . -65°C to + 150°C
Lead Temperature during Soldering (Note 1)
D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to VCC+0.6V
Transient Voltage (<20ns) on Any Pin to Ground Potential . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VCC+2.0V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . -0.6V to +4.0V
Electrostatic Discharge Voltage (Human Body model)
(VESD) (Note 2) . . . . . . . . . . . . . . . . . . . -2000V to 2000V
Notes:
1. Compliant with JEDEC Std J-STD-020B (for small body,
Sn-Pb or Pb assembly).
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω,
R2=500Ω)
*Comments
Stressing the device above the rating listed in the Absolute
Maximum Ratings" table may cause permanent damage to
the device. These are stress ratings only and operation of
the device at these or any other conditions above those
indicated in the Operating sections of this specification is not
implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. Refer also
to the AMIC SURE Program and other relevant quality
documents.
DC AND AC PARAMETERS
This section summarizes the operating and measurement
conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the
Measurement Conditions summarized in the relevant tables.
Designers should check that the operating conditions in their
circuit match the measurement conditions when relying on
the quoted parameters.
Table 9. Operating Conditions
Symbol Parameter Min. Max. Unit
VCC Supply Voltage 2.7 3.6 V
TA Ambient Operating Temperature –40 85 °C
Table 10. Data Retention and Endurance
Parameter Condition Min. Max. Unit
Erase/Program Cycles At 85°C 100,000 Cycles
Data Retention At 85°C 20 Years
Table 11. Capacitance
Symbol Parameter Test Condition Min. Max. Unit
COUT Output Capacitance (DO) VOUT = 0V 8 pF
CIN Input Capacitance (other pins) VIN = 0V 6 pF
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 33 MHz.
A25L032 Series
(December, 2014, Version 1.5) 39 AMIC Technology Corp.
Table 12. DC Characteristics
Symbol Parameter Test Condition Min. Max. Unit
ILI Input Leakage Current ± 2 µA
ILO Output Leakage Current ± 2 µA
ICC1 Standby Current S = VCC, VIN = VSS or VCC 15 µA
ICC2 Deep Power-down Current S = VCC, VIN = VSS or VCC 15 µA
C= 0.1VCC / 0.9.VCC at 100MHz, DO = open 24 mA
C= 0.1VCC / 0.9.VCC at 50MHz, DO = open 21 mA
Operating Current (Read)
C= 0.1VCC / 0.9.VCC at 33MHz, DO = open 17 mA
ICC3
Operating Current (Dual Read) C= 0.1VCC / 0.9.VCC at 100MHz, IO0, IO1 = open 26 mA
ICC4 Operating Current (PP) S = VCC 15 mA
ICC5 Operating Current (WRSR) S = VCC 12 mA
ICC6 Operating Current (SE) S = VCC 25 mA
ICC7 Operating Current (BE) S = VCC 25 mA
VIL Input Low Voltage –0.5 0.3VCC V
VIH Input High Voltage 0.7VCC V
CC+0.4 V
VOL Output Low Voltage IOL = 1.6mA 0.4 V
VOH Output High Voltage IOH = –100µA VCC–0.2 V
Note: 1. This is preliminary data at 85°C
Table 13. AC Measurement Conditions
Symbol Parameter Min. Max. Unit
CL Load Capacitance 30 pF
Input Rise and Fall Times 5 ns
Input Pulse Voltages 0.2VCC to 0.8VCC V
Input Timing Reference Voltages 0.3VCC to 0.7VCC V
Output Timing Reference Voltages VCC / 2 V
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Figure 27. AC Measurement I/O Waveform
0.3VCC
0.5VCC
0.2VCC
0.7VCC
0.8VCC
Input Levels Input and Output
Timing Reference Levels
A25L032 Series
(December, 2014, Version 1.5) 40 AMIC Technology Corp.
Table 14. AC Characteristics
Symbol Alt. Parameter Min. Typ. Max. Unit
fC f
C Clock Frequency for all instructions, except READ (03h) D.C. 100 MHz
fR Clock Frequency for READ (03h) instruction D.C. 65 MHz
tCH 1 tCLH Clock High Time 5 ns
tCL 1 tCLL Clock Low Time 5 ns
tCLCH 2 Clock Rise Time3 (peak to peak) 0.1 V/ns
tCHCL 2 Clock Fall Time3 (peak to peak) 0.1 V/ns
tSLCH t
CSS S Active Setup Time (relative to C) 5 ns
tCHSL
S Not Active Hold Time (relative to C) 5 ns
tDVCH t
DSU Data In Setup Time 3 ns
tCHDX t
DH Data In Hold Time 3 ns
tCHSH
S Active Hold Time (relative to C) 5 ns
tSHCH
S Not Active Setup Time (relative to C) 5 ns
tSHSL t
CSH S Deselect Time 30 ns
tSHQZ 2 tDIS Output Disable Time 7 ns
tCLQV t
V Clock Low to Output Valid 7 ns
tCLQX t
HO Output Hold Time 0 ns
tHLCH
HOLD Setup Time (relative to C) 5 ns
tCHHH
HOLD Hold Time (relative to C) 5 ns
tHHCH HOLD Setup Time (relative to C) 5 ns
tCHHL HOLD Hold Time (relative to C) 5 ns
tHHQX 2 tLZ HOLD to Output Low-Z 7 ns
tHLQZ 2 tHZ HOLD to Output High-Z 7 ns
tWHSL 4 Write Protect Setup Time 20 ns
tSHWL 4 Write Protect Hold Time 100 ns
tDP 2 SHigh to Deep Power-down Mode 3 µs
tRES1 2 SHigh to Standby Mode without Electronic Signature Read 1 µs
tRES2 2 SHigh to Standby Mode with Electronic Signature Read
1 µs
tW Write Status Register Cycle Time 5 20 ms
Page Program Cycle Time 2 6 ms
tpp
Program OTP Cycle Time 2 3 ms
tSE Sector Erase Cycle Time 80 200 ms
tBE Block Erase Cycle Time 0.5 2 s
tCE Chip Erase Cycle Time of A25L032 32 64 s
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for WRSR instruction when Status Register Protect bits (SRP1, SRP0) = (0, 1)
A25L032 Series
(December, 2014, Version 1.5) 41 AMIC Technology Corp.
Figure 28. Serial Input Timing
S
C
DI
tSHSL
High Impedance
DO
tSLCHtCHSL tSHCH
tCHDX
tCHSH
tDVCH tCLCH
LSB INMSB IN
tCHCL
Figure 29. Write Protect Setup and Hold Timing during WRSR when (SRP1, SRP0) = (0, 1)
High Impedance
tWHSL tSHWL
S
C
DI
DO
W
A25L032 Series
(December, 2014, Version 1.5) 42 AMIC Technology Corp.
Figure 30. Hold Timing
S
C
DO
DI
HOLD
tHLQZ
tHLCH
tHHCH
tCHHL
tCHHH
tHHQX
Figure 31. Output Timing
S
C
DO
DI ADDR.LSB IN
LSB OUT
tCLQV
tCLQV
tCH
tCLQX
tCLQX
tCL
tQLQH
tQHQL
tSHQZ
A25L032 Series
(December, 2014, Version 1.5) 43 AMIC Technology Corp.
Part Numbering Scheme
A25 XX
Package Type
Blank = DIP8
M = 209 mil SOP 8
Q4 = WSON 8 (6*5m m )
Device Voltage
L = 2.7-3.6V
Device Version*
Device Type
A25 = A MIC Serial Flash
Device Density
512 = 512 Kbit (4KB uniform sectors)
010 = 1 Mbit (4KB uniform sectors)
020 = 2 Mbit (4KB uniform sectors)
040 = 4 Mbit (4KB uniform sectors)
080 = 8 Mbit (4KB uniform sectors)
016 = 16 Mbit (4KB uniform sectors)
032 = 32 Mbit (4KB uniform sectors)
X
Package Material
Blank: normal
F: PB free
X
* Optional
X
XXX
X
Quad SPI Operation
Q = Support Quad SPI Operation
Blank = Do not support Quad SPI Operation
/X
Packing
Blank: for DIP8
G: for SOP8 In Tube
Q: for Tape & Reel
Temperature*
Blank = 0°C ~ +70°C
U = -40°C ~ +85°C
E = -40°C ~ +85°C (With AEC-Q100
Grade 3 Certification)
A25L032 Series
(December, 2014, Version 1.5) 44 AMIC Technology Corp.
Ordering Information
Part No. Speed (MHz)
Active Read
Current
Max. (mA)
Program/Erase
Current
Max. (mA)
Standby
Current
Max. (μA)
Package
A25L032-F
A25L032-UF
A25L032-EF
8 Pin Pb-Free DIP (300 mil)
8 Pin Pb-Free DIP (300 mil)
8 Pin Pb-Free DIP (300 mil)
A25L032M-F
A25L032M-UF
A25L032M-EF
8 Pin Pb-Free SOP (209mil)
8 Pin Pb-Free SOP (209mil)
8 Pin Pb-Free SOP (209mil)
A25L032Q4-F
100 24 15 15
8 Pin Pb-Free WSON (6*5mm)
Operating temperature range:
-40°C ~ +85°C
-U is for industrial operating temperature range: -40°C ~ +85°C
-E is for industrial operating temperature range: -40°C ~ +85°C (With AEC-Q100 Grade 3 Certification)
A25L032 Series
(December, 2014, Version 1.5) 45 AMIC Technology Corp.
Package Information
P-DIP 8L Outline Dimensions unit: inches/mm
Dimensions in inches Dimensions in mm
Symbol Min Nom Max Min Nom Max
A - - 0.180 - - 4.57
A1 0.015 - - 0.38 - -
A2 0.128 0.130 0.136 3.25 3.30 3.45
B 0.014 0.018 0.022 0.36 0.46 0.56
B1 0.050 0.060 0.070 1.27 1.52 1.78
B2 0.032 0.039 0.046 0.81 0.99 1.17
C 0.008 0.010 0.013 0.20 0.25 0.33
D 0.350 0.360 0.370 8.89 9.14 9.40
E 0.290 0.300 0.315 7.37 7.62 8.00
E1 0.254 0.260 0.266 6.45 6.60 6.76
e1 - 0.100 - - 2.54 -
L 0.125 - - 3.18 - -
EA 0.345 - 0.385 8.76 - 9.78
S 0.016 0.021 0.026 0.41 0.53 0.66
Notes:
1. Dimension D and E1 do not include mold flash or protrusions.
2. Dimension B1 does not include dambar protrusion.
3. Tolerance: ±0.010” (0.25mm) unless otherwise specified.
A25L032 Series
(December, 2014, Version 1.5) 46 AMIC Technology Corp.
Package Information
SOP 8L (209mil) Outline Dimensions unit: mm
E
4
1
eb
85
D
A2
A
A1
L
θ
E1
0.25
GAGE PLANE
SEATING PLANE
C
Dimensions in mm
Symbol Min Nom Max
A 1.75 1.95 2.16
A1 0.05
0.15 0.25
A2 1.70 1.80 1.91
b 0.35 0.42 0.48
C 0.19 0.20 0.25
D 5.13 5.23 5.33
E 7.70 7.90 8.10
E1 5.18 5.28 5.38
e 1.27 BSC
L 0.50 0.65 0.80
θ 0° - 8°
Notes:
Maximum allowable mold flash is 0.15mm at the package
ends and 0.25mm between leads
A25L032 Series
(December, 2014, Version 1.5) 47 AMIC Technology Corp.
Package Information
WSON 8L (6 X 5 X 0.8mm) Outline Dimensions unit: mm/mil
14
58
0.25 C
0.25 C
E
D
E2
D2
eb
8
L
A1
A3
A
0.10// C
y C
Seating Plane
Pin1 ID Area
567
1432
C0.30
Dimensions in mm Dimensions in mil
Symbol Min Nom Max Min Nom Max
A 0.700 0.750 0.800 27.6 29.5 31.5
A1 0.000 0.020 0.050 0.0 0.8 2.0
A3 0.203 REF 8.0 REF
b 0.350 0.400 0.480 13.8 15.8 18.9
D 5.900 6.000 6.100 232.3 236.2 240.2
D2 3.200 3.400 3.600 126.0 133.9 141.7
E 4.900 5.000 5.100 192.9 196.9 200.8
E2 3.800 4.000 4.200 149.6 157.5 165.4
L 0.500 0.600 0.750 19.7 23.6 29.5
e 1.270 BSC 50.0 BSC
y 0 - 0.080 0 - 3.2
Note:
1. Controlling dimension: millimeters
2. Leadframe thickness is 0.203mm (8mil)
