TPS7510x www.ti.com SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 Low Dropout, Two-Bank LED Driver with PWM Brightness Control FEATURES DESCRIPTION * The TPS7510x linear low dropout (LDO) matching LED current source is optimized for low power keypad and navigation pad LED backlighting applications. The device provides a constant current to up to four unmatched LEDs organized in two banks of two LEDs each in a common-cathode topology. Without an external resistor, the current source defaults to factory-programmable, preset current level with 0.5% accuracy (typical). An optional external resistor can be used to set initial brightness to user-programmable values with higher accuracy. Brightness can be varied from off to full brightness by inputting a pulse width modulation (PWM) signal on each Enable pin. Each bank has independent enable and brightness control, but current matching is done to all four channels concurrently. The input supply range is ideally suited for single-cell Li-Ion battery supplies and the TPS7510x can provide up to 25mA per LED. 1 2 * * * * * * * * Regulated Output Current with 2% LED-to-LED Matching Drives Up to Four LEDs at 25mA Each in a Common Cathode Topology 28mV Typical Dropout Voltage Extends Usable Supply Range in Li-Ion Battery Applications Brightness Control Using PWM Signals Two 2-LED Banks with Independent Enable and PWM Brightness Control per Bank No Internal Switching Signals--Eliminates EMI Default LED Current Eliminates External Components - Default values from 3mA to 10mA (in 1mA increments) available using innovative factory EEPROM programming - Optional external resistor can be used for high-accuracy, user-programmable current Over-Current and Over-Temperature Protection Available in Wafer Chip-Scale Package or 2,5mm x 2,5mm SON-10 No internal switching signals are used, eliminating troublesome electromagnetic interference (EMI). The TPS7510x is offered in an ultra-small, 9-ball, 0.4mm ball-pitch wafer chip-scale package (WCSP) and a 2,5mm x 2,5mm, 10-pin SON package, yielding a very compact total solution size ideal for mobile handsets and portable backlighting applications. The device is fully specified over TJ = -40C to +85C. APPLICATIONS * * * * Keypad and Display Backlighting White and Color LEDs Cellular Handsets PDAs and Smartphones VBATT TPS7510x YFF 9-Ball WCSP (Top View) TPS7510x DSK 2,5mm x 2,5mm SON-10 (Top View) ENB 1 10 ISET 9 VIN 8 D1B A3 B3 C3 ENA 2 A2 B2 C2 D1A 3 A1 B1 C1 D2A 4 7 D2B GND 5 6 NC TPS7510x VIN D1A VENA ENA D2A VENB ENB D1B GND D2B ISET 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2006-2010, Texas Instruments Incorporated TPS7510x SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) OPTIONS (2) PRODUCT ID TPS7510x yyyz (1) (2) X is the nominal default diode output current (for example, 3 = 3mA, 5 = 5mA, and 0 = 10mA). YYY is the package designator. Z is the reel quantity (R = 3000, T = 250). For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Default set currents from 3mA to 10mA in 1mA increments are available through the use of innovative factory EEPROM programming. Minimum order quantities may apply. Contact factory for details and availability. ABSOLUTE MAXIMUM RATINGS (1) Over operating temperature range (unless otherwise noted). PARAMETER VALUE VIN range -0.3V to +7.0V VISET, VENA, VENB, VDX range -0.3V to VIN IDX for D1A, D2A, D1B, D2B 35mA D1A, D2A, D1B, D2B short circuit duration Indefinite Continuous total power dissipation Internally limited Junction temperature (TJ) -55C to +150C Storage temperature -55C to +150C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. DISSIPATION RATINGS BOARD PACKAGE RqJC RqJA DERATING FACTOR ABOVE TA = +25C TA < +25C TA = +70C TA = +85C Low-K (1) YFF 55C/W 208C/W 4.8mW/C 480mW 264mW 192mW YFF 55C/W 142C/W 7.0mW/C 704mW 387mW 282mW DSK 40C/W 60.6C/W 17mW/C 1650mW 908mW 660mW High-K (2) (1) (2) The JEDEC low-K (1s) board used to derive this data was a 3 inch x 3 inch, two-layer board with 2 ounce copper traces on top of the board. The JEDEC high-K (2s2p) board used to derive this data was a 3 inch x 3 inch, multi-layer board with 1 ounce internal power and ground planes and 2 ounce copper traces on top and bottom of the board. RECOMMENDED OPERATING CONDITIONS PARAMETER VIN Input voltage IDX Operating current per LED tPWM On-time for PWM signal TJ Operating junction temperature range 2 Submit Documentation Feedback MIN TYP MAX UNIT 2.7 5.5 V 3 25 mA +85 C 33 -40 ms Copyright (c) 2006-2010, Texas Instruments Incorporated TPS7510x www.ti.com SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 ELECTRICAL CHARACTERISTICS Over operating junction temperature range (TJ = -40C to +85C), VIN = 3.8V, DxA and DxB = 3.3V, RSET = 32.4k, and ENA and ENB = 3.8V, unless otherwise noted. Typical values are at TA = +25C. PARAMETER ISHDN IGND Shutdown supply current Ground current TEST CONDITIONS TYP MAX VENA,B = 0V, VDX = 0V 0.03 1.0 mA ISET = open, VIN = 4.5V YFF package 170 200 mA IDX = 5mA, VIN = 3.8V DSK package 170 230 mA 2 4 % TA = +25C ID Current matching (IDXMAX - IDXMIN/IDXMAX) x 100% TA = -40C to +85C MIN 0 YFF package 0 5 % DSK package 0 6 % IDX%/VIN Line regulation 3.5V VIN 4.5V, IDX = 5mA 2.0 IDX%/VDX Load regulation 1.8V VDX 3.5V, IDX = 5mA 0.8 IDXnom = 5mA 28 VDO Dropout voltage of any DX current source (VDX at IDX = 0.8 x IDX, nom) IDXnom = 15mA 70 VISET Reference voltage for current set IOPEN ISET k (1) Diode current accuracy (1) 1.183 ISET = open, VDX = VIN - 0.2V Enable high level input voltage Enable low level input voltage IINA Enable pin A (VENA) input current IINB Enable pin B (VENB) input current tSD Shutdown delay time TSD Thermal shutdown temperature %/V 100 mV 1.225 1.257 V 0.5 3 % DSK package 0.5 4 % 62.5 mA 2.5 ISET to IDX current ratio (1) VIL %/V YFF package ISET pin current range VIH UNIT 420 1.2 V 0.4 VENA = 3.8V 5.0 VENA = 1.8V 2.2 VENB = 3.8V 4.0 VENB = 1.8V 1.8 Delay from ENA and ENB = low to reach shutdown current (IDX = 0.1 x IDX, nom) 5 13 Shutdown, temp increasing +165 Reset, temp decreasing +140 6.1 4.9 V mA mA 30 ms C Average of all four IDX outputs. Copyright (c) 2006-2010, Texas Instruments Incorporated Submit Documentation Feedback 3 TPS7510x SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 www.ti.com Table 1. Recommended (1% Tolerance) Set Resistor Values (1) 4 RSET (k) ISET (mA) IDX (mA) (1) 511 2.4 1.0 255 4.8 2.0 169 7.2 3.0 127 9.6 4.1 102 12.0 5.0 84.5 14.5 6.1 73.2 16.7 7.0 64.9 18.9 7.9 56.2 21.8 9.2 51.1 24.0 10.1 46.4 26.4 11.1 42.2 29.0 12.2 39.2 31.3 13.1 36.5 33.6 14.1 34.0 36.0 15.1 32.4 37.8 15.9 30.1 40.7 17.1 28.7 42.7 17.9 26.7 45.9 19.3 25.5 48.0 20.2 24.3 50.4 21.2 23.2 52.8 22.2 22.1 55.4 23.3 21.5 57.0 23.9 20.5 59.8 25.1 IDX = (VSET/RSET) x k. Submit Documentation Feedback Copyright (c) 2006-2010, Texas Instruments Incorporated TPS7510x www.ti.com SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 PIN ASSIGNMENTS YFF PACKAGE 9-BALL WCSP (TOP VIEW) DSK PACKAGE 2,5mm x 2,5mm SON-10 (TOP VIEW) A3 B3 C3 A2 B2 C2 ENB 1 10 ISET A1 B1 C1 ENA 2 9 VIN D1A 3 8 D1B D2A 4 7 D2B GND 5 6 NC GND (1) NOTE (1): Not connected TERMINAL FUNCTIONS NAME WCSP SON INPUT/ OUTPUT DESCRIPTION ENA A3 2 I Enable pin, Bank A. Driving this pin high turns on the current source to Bank A outputs. Driving this pin low turns off the current source to Bank A outputs. An applied PWM signal reduces the LED current (between 0mA and the maximum current set by ISET) as a function of the duty cycle of the PWM signal. ENA and ENB can be tied together. ENA can be left OPEN or connected to GND if not used. See the Application Information section for more details. D1A B3 3 O Diode source current output, Bank A. Connect to LED anode. D2A C3 4 O Diode source current output, Bank A. Connect to LED anode. I Enable pin, Bank B. Driving this pin high turns on the current source to Bank B outputs. Driving this pin low turns off the current source to Bank B outputs. An applied PWM signal reduces the LED current (between 0mA and the maximum current set by ISET) as a function of the duty cycle of the PWM signal. ENA and ENB can be tied together. ENB can be left OPEN or connected to GND if not used. See the Application Information section for more details. Supply Input ENB A2 1 VIN B2 9 I GND C2 5, Pad -- Ground ISET A1 10 O An optional resistor can be connected between this pin and GND to set the maximum current through the LEDs. If no resistor is connected, ISET defaults to the internally-programmed value. D1B B1 8 O Diode source current output, Bank B. Connect to LED anode. D2B C1 7 O Diode source current output, Bank B. Connect to LED anode. NC -- 6 -- Not connected. Copyright (c) 2006-2010, Texas Instruments Incorporated Submit Documentation Feedback 5 TPS7510x SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 www.ti.com FUNCTIONAL BLOCK DIAGRAM Controlled Current Source D1A Control Logic ENA 800kW Controlled Current Source Controlled Current Source D2A D1B ENB 1MW VIN ISET Control Logic Controlled Current Source D2B Int/Ext Set Current Sense Current Reference GND 6 Submit Documentation Feedback Copyright (c) 2006-2010, Texas Instruments Incorporated TPS7510x www.ti.com SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 TYPICAL CHARACTERISTICS Over operating junction temperature range (TJ = -40C to +85C), VIN = 3.8V, DxA and DxB = 3.3V, RSET = 32.4k, and ENA and ENB = high, unless otherwise noted. Typical values are at TA = +25C. LED CURRENT vs DUTY CYCLE (f = 300Hz) LINE TRANSIENT (600mV Pulse) 25 20 IOUT (mA) 3.9V 1V/div 15 VIN 3.6V 10 0.5mA/div IOUT 5 0 0 10 20 30 40 50 60 70 80 90 20ms/div 100 Duty Cycle (%) Figure 1. Figure 2. LINE TRANSIENT (300mV Pulse) DIMMING RESPONSE (Both Channels) 1.2V 3.6V 3.3V 1V/div VIN 0.4V 1V/div ENA = ENB 20mA/div 0.5mA/div IOUT IOUT 20ms/div 20ms/div Figure 3. Figure 4. DIMMING RESPONSE (Single Channel) OUTPUT CURRENT vs HEADROOM VOLTAGE 25 ENA = 3.8V 20 -40C 0.4V 1V/div ENB 20mA/div IOUT (mA) 1.2V 15 +25C 10 +85C IOUT 5 0 20ms/div 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 VIN - VOUT (V) Figure 5. Copyright (c) 2006-2010, Texas Instruments Incorporated Figure 6. Submit Documentation Feedback 7 TPS7510x SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) Over operating junction temperature range (TJ = -40C to +85C), VIN = 3.8V, DxA and DxB = 3.3V, RSET = 32.4k, and ENA and ENB = high, unless otherwise noted. Typical values are at TA = +25C. OUTPUT CURRENT vs RSET Expanded Range IOUT (mA) IOUT (mA) OUTPUT CURRENT vs RSET 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 20 60 100 140 180 220 260 300 340 380 420 460 500 20 30 40 50 RSET (kW) 70 60 80 90 100 RSET (kW) Figure 7. Figure 8. GROUND CURRENT vs INPUT VOLTAGE TPS75105 OUTPUT CURRENT vs INPUT VOLTAGE RSET = Open 180 5.4 5.3 175 170 IOUT (mA) IQ (mA) 5.2 +85C 165 +25C -40C 5.1 5.0 +85C 4.9 +25C 4.8 160 4.7 -40C 4.6 155 2.5 3.0 3.5 4.0 4.5 5.5 5.0 3.4 3.9 4.4 VIN (V) 4.9 5.4 5.9 VIN (V) Figure 9. Figure 10. TPS75105 OUTPUT CURRENT vs TEMPERATURE RSET = Open OUTPUT CURRENT vs OUTPUT VOLTAGE 5.4 20 18 5.3 IOUT D1B IOUT D2B 5.2 16 5.0 IOUT (mA) IOUT (mA) 14 5.1 IOUT D2A 4.9 IOUT D1A 12 10 8 6 4.8 +85C +25C -40C 4 4.7 2 4.6 0 -40 -20 0 20 40 Temperature (C) Figure 11. 8 Submit Documentation Feedback 60 80 85 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VOUT (V) Figure 12. Copyright (c) 2006-2010, Texas Instruments Incorporated TPS7510x www.ti.com SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 APPLICATIONS INFORMATION LIMITATIONS ON LED FORWARD VOLTAGES SETTING THE OUTPUT CURRENT LEVEL The TPS7510x is a quad matched current source. Each of the four current source output levels is set by a single reference current. An internal voltage reference of 1.225V (nominal) in combination with a resistor sets the reference current level. This reference current is then mirrored onto each of the four outputs with a ratio of typically 420:1. The resistor required to set the LED current is calculated using Equation 1: RISET = K VISET ILED where: * * * K is the current ratio VISET is the internal reference voltage ILED is the desired LED current (1) For example, to set the LED current level to 10mA, a resistor value of 51.1k is required. This value sets up a reference current of 23.9mA (1.22V/51.1k). In turn, this reference current is mirrored to each output current source, resulting in an output current of 10mA (23.9mA x 420). The TPS7510x offers two methods for setting the output current levels. The LED current is set either by connecting a resistor (calculated using Equation 1) from the ISET pin to GND, or leaving ISET unconnected to employ the factory-programmed RSET resistance. The internal programmed resistance is implemented using high-precision processing and yields a reference current accuracy of 0.5%, nominal. Accuracy using external resistors is subject to the tolerance of the external resistor and the accuracy of the internal reference voltage. The TPS7510x automatically detects the presence of an external resistor by monitoring the current out of the ISET pin. Current levels in excess of 3mA signify the presence of an external resistor and the device uses the external resistor to set the reference current. If the current from ISET is less than 3mA, the device defaults to the preset internal reference set resistor. The TPS7510x is available with eight preset current levels, from 3mA to 10mA (per output) in 1mA increments. Solutions using the preset internal current level eliminate an external component, thereby increasing accuracy and reducing cost. Copyright (c) 2006-2010, Texas Instruments Incorporated The TPS7510x is a linear current source implementing LDO regulator building blocks. Therefore, there are some limitations to the forward (output) voltages that can be used while maintaining accurate operation. The first limitation is the maximum LED forward voltage. Because LDO technology is employed, there is the dropout voltage to consider. The TPS7510x is an ultra-low dropout device with typical dropouts in the range of 30mV at 5mA. Care must be taken in the design to ensure that the difference between the lowest possible input voltage (for example, battery cut-off) and the highest possible forward voltage yields at least 100mV of headroom. Headroom levels less than dropout decrease the accuracy of the current source (see Figure 6). The other limitation to consider is the minimum output voltage required to yield accurate operation. The current source employs NMOS MOSFETs, and a minimum forward LED voltage of approximately 1.5V on the output is required to maintain highest accuracy. The TPS7510x is ideal for white LEDs and color LEDs with forward voltages greater than 1.5V. This range includes red LEDs that have typical forward voltages of 1.7V. USE OF EXTERNAL CAPACITORS The TPS7510x does not require the use of any external capacitors for stable operation. Nominal stray and/or power-supply decoupling capacitance on the input is adequate for stable operation. Capacitors are not recommended on the outputs because they are not needed for stability. USE OF UNUSED OUTPUTS OR TYING OUTPUTS TOGETHER Unused outputs may be left unconnected or tied to the VIN supply. While open outputs are acceptable, tying unused outputs to the VIN supply increases ESD protection. Connecting unused output to ground violates the minimum recommended output voltage, results in current levels that potentially exceed the set/preset LED current and should be avoided. Connecting outputs in parallel is an acceptable way of increasing the amount of LED current drive. This configuration is a useful trick when the higher current level is a multiple of the preset value. Submit Documentation Feedback 9 TPS7510x SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 www.ti.com USE OF ENABLE PINS FOR PWM DIMMING LOAD REGULATION The TPS7510x divides control of the LED outputs into two banks of two current sources each. Each bank is controlled by the use of an independent, active-high enable pin (ENA and ENB). The enable pin can be used for standard ON/OFF operation of the current source, driven by standard logic levels from processor GPIO pins, for example. Drive EN high to turn on the bank of LEDs; drive EN low to turn off the bank of LEDs. The TPS7510x is designed to provide very tight load regulation. In the case of a fixed current source, the output load change is a change in voltage. Tight load regulation means that output voltages (LED forward voltages) with large variations can be used without impacting the fixed current being sourced by the output or the output-to-output current matching. The permissible variation on the output not only allows for large variations in white LED forward voltages, but even permits the use of different color LEDs on different outputs with minimal effect on output current. Another use of the enable pin is for LED dimming. LED brightness is a function of the current level being driven across the diode and the time that current is being driven through the diode. The perceived brightness of an LED can be changed by either varying the current level or, more effectively, by changing the time in which that current is present. When a PWM signal is input into the enable pin, the duty cycle (high or ON time) determines how long the fixed current is driven across the LEDs. Reducing or increasing that duration has the effect of dimming or brightening the LED, without having to employ the more complex method of varying the current level. This technique is particularly useful for reducing LED brightness in low ambient light conditions, where LED brightness is not required, thereby decreasing current consumption. The enable pins can also be used for LED blinking, varying blink rates based on system status. Although providing many useful applications, PWM dimming does have a minimum duty cycle required to achieve the required current level. The recommended minimum on time of the TPS7510x is approximately 33ms. On times less than 33ms result in reductions in the output current by not allowing enough time for the output to reach the desired current level. Also, having both enables switching together, asynchronously, or having one enable on at all times, impacts the minimum recommended on time (see Figure 4 and Figure 5). If one enable is already on, the speed at which the other channel turns on is faster than if both channel were turning on together or if the other channel is off. Therefore, connecting one enable on allows for approximately 10ms to 12ms shorter minimum on times of the switching enable channel. LINE REGULATION The TPS7510x is also designed to provide very tight line regulation. This architecture allows for voltage transient events to occur on the power supply (battery) without impacting the fixed output current levels or the output to output current matching. A prime example of such a supply transient event is the occurrence of a transmit pulse on the radio of a mobile handset. These transient pulses can cause variations of 300mV and 600mV on the supply to the TPS7510x. The line regulation limitation is that the lower supply voltage level of the event does not cause the input to output voltage difference to drop below the dropout voltage range. TPS7510x Dimming PWM or CPU GPIO ENA D1A ENB D2A D1B VIN Li-Ion Battery D2B ISET GND RSET (optional) Figure 13. Typical Application Diagram Unused enable pins can be left unconnected or connected to ground to minimize current consumption. Connecting unused enable pins to ground increases ESD protection. If connected to VIN, a small amount of current drains through the enable input (see the Electrical Characteristics table). 10 Submit Documentation Feedback Copyright (c) 2006-2010, Texas Instruments Incorporated TPS7510x www.ti.com SBVS080H - SEPTEMBER 2006 - REVISED JANUARY 2010 1,213 1,193 1,213 1,193 Figure 14. YFF Wafer Chip-Scale Package Dimensions (in mm) space REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision G (March. 2009) to Revision H Page * Added DSK package dissipation information to Dissipation Ratings table ........................................................................... 2 * Revised ground current parameter, Electrical Characteristics; changed symbol from IQ to IGND; added specifications for YFF and DSK packages .................................................................................................................................................. 3 * Added YFF and DSK package specifications for current matching parameter, Electrical Characteristics ........................... 3 * Changed diode current accuracy parameter, Electrical Characteristics, to reflect YFF and DSK package specifications ........................................................................................................................................................................ 3 * Deleted operating junction temperature range specification from Electrical Characteristics table to eliminate redundancy ........................................................................................................................................................................... 3 Copyright (c) 2006-2010, Texas Instruments Incorporated Submit Documentation Feedback 11 PACKAGE OPTION ADDENDUM www.ti.com 25-Jan-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS75103YFFR ACTIVE DSBGA YFF 9 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM TPS75103YFFT ACTIVE DSBGA YFF 9 250 SNAGCU Level-1-260C-UNLIM TPS75105DSKR ACTIVE SON DSK 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS75105DSKT ACTIVE SON DSK 10 250 CU NIPDAU Level-1-260C-UNLIM TPS75105YFFR ACTIVE DSBGA YFF 9 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM TPS75105YFFT ACTIVE DSBGA YFF 9 250 SNAGCU Level-1-260C-UNLIM Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Aug-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ TPS75103YFFR DSBGA 3000 180.0 8.4 YFF 9 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.45 1.45 0.8 4.0 8.0 Q1 TPS75103YFFT DSBGA YFF 9 250 180.0 8.4 1.45 1.45 0.8 4.0 8.0 Q1 TPS75105DSKR SON DSK 10 3000 179.0 8.4 2.73 2.73 0.8 4.0 8.0 Q2 TPS75105DSKT SON DSK 10 250 179.0 8.4 2.73 2.73 0.8 4.0 8.0 Q2 TPS75105YFFR DSBGA YFF 9 3000 180.0 8.4 1.45 1.45 0.8 4.0 8.0 Q1 TPS75105YFFT DSBGA YFF 9 250 180.0 8.4 1.45 1.45 0.8 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Aug-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS75103YFFR DSBGA YFF 9 3000 210.0 185.0 35.0 TPS75103YFFT DSBGA YFF 9 250 210.0 185.0 35.0 TPS75105DSKR SON DSK 10 3000 203.0 203.0 35.0 TPS75105DSKT SON DSK 10 250 203.0 203.0 35.0 TPS75105YFFR DSBGA YFF 9 3000 210.0 185.0 35.0 TPS75105YFFT DSBGA YFF 9 250 210.0 185.0 35.0 Pack Materials-Page 2 X: Max = 1.258 mm, Min =1.158 mm Y: Max = 1.258 mm, Min =1.158 mm IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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