IXA12IF1200HB preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE(sat) = 1.8 V Copack Part number IXA12IF1200HB Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-247 Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fans Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200HB preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25C TC = 25C I C100 V 6.5 V 0.1 mA I C = 0.3 mA; VGE = VCE TVJ = 25C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 25C 1.8 TVJ = 125 C t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 5.4 5.9 10 A TVJ = 125 C 10 A VGE = 15 V; R G = 100 VGE = 15 V; R G = 100 short circuit safe operating area VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = 15 V R G = 100 ; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 27 nC 70 ns 40 ns 250 ns 100 ns 1.1 mJ 1.1 mJ TVJ = 125 C VCEmax = 1200 V SCSOA short circuit current mA 0.1 500 inductive load VCE = V 2.1 TVJ = 125 C VCE = 600 V; VGE = 15 V; IC = A 2.1 gate emitter threshold voltage VGE = 20 V V 20 A VGE(th) total gate charge 30 W IC = gate emitter leakage current V 13 collector emitter saturation voltage Q G(on) 20 85 VCE(sat) I GES Unit V TC = 25C total power dissipation 10 A; VGE = 15 V max. 1200 TC = 100 C Ptot I CM typ. TVJ = 125 C 30 A 10 s A 40 1.5 K/W K/W 0.25 Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 22 A TC = 100 C 14 A TVJ = 25C 2.20 V * mA I F 100 10 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved TVJ = 25C * mA 1.3 C 10.5 A TVJ = 125C VR = 600 V -di F /dt = -250 A/s IF = 10 A; VGE = 0 V TVJ = 125C V 1.95 350 ns 0.35 mJ 1.8 K/W 0.25 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20110330a IXA12IF1200HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 C -40 125 C 150 C Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number I X A 12 IF 1200 HB IXYS Logo g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number IXA12IF1200HB Similar Part IXA12IF1200PB IXA12IF1200TC Equivalent Circuits for Simulation I V0 R0 Marking on Product IXA12IF1200HB Package TO-220AB (3) TO-268AA (D3Pak) (2) Delivery Mode Tube T VJ = 150 C * on die level IGBT Diode threshold voltage 1.1 1.25 R 0 max slope resistance * 153 85 (c) 2011 IXYS all rights reserved Code No. 508453 Voltage class 1200 1200 V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 30 V m Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200HB preliminary Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 2 (C) (G) 1 3 (E) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200HB preliminary IGBT 20 IC 20 VGE = 15 V 16 16 12 12 IC TVJ = 25C [A] TVJ = 125C 8 20 VGE = 15 V 17 V 19 V 13 V 16 11 V TVJ = 125C IC 12 [A] 8 [A] 8 9V 4 4 4 0 0 0 TVJ = 125C TVJ = 25C 0 1 2 3 0 1 2 3 4 5 7 VCE [V] VCE [V] Fig. 1 Typ. output characteristics 3.0 IC = 10 A VCE = 600 V 15 IC = 10 A VCE = 600 V VGE = 15 V TVJ = 125C 1.6 2.0 E E 10 11 12 13 Fig. 3 Typ. tranfer characteristics Eon VGE 10 9 1.8 RG = 100 VCE = 600 V VGE = 15 V TVJ = 125C 2.5 8 VGE [V] Fig. 2 Typ. output characteristics 20 [V] 6 Eoff 1.5 [mJ] 1.0 Eon 1.4 [mJ] 1.2 Eoff 5 1.0 0.5 0 0.0 0 10 20 30 0 8 12 16 IC [A] QG [nC] Fig. 4 Typ. turn-on gate charge 4 Fig. 5 Typ. switching energy vs. collector current 20 0.8 80 120 160 200 240 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200HB preliminary Diode 2.4 20 24 TVJ = 125C TVJ = 125C VR = 600 V 2.0 20 A VR = 600 V 15 20 A 20 1.6 IF Qrr 10 [A] [C] 5 IRM 10 A 1.2 0.8 TVJ = 125C 0.5 1.0 [A] 5A 5A 12 TVJ = 25C 0 0.0 10 A 16 0.4 1.5 2.0 2.5 0.0 200 250 300 350 400 450 500 3.0 VF [V] 8 200 250 300 350 400 450 500 diF /dt [A/s] diF /dt [A/s] Fig. 1 Typ. forward current versus VF Fig. 2 Typical reverse recov. charge Qrr versus. diF /dt 500 Fig.3 Typ: peak reverse current IRR versus diF /dt 0.6 20 A TVJ = 125C TVJ = 125C VR = 600 V 0.5 VR = 600 V 20 A 400 10 A Erec 0.4 trr 300 [ns] [mJ] 0.3 5A 200 0.2 100 200 250 300 350 400 450 500 diF /dt [A/s] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 10 A Fig. 5 Typ. recovery time trr versus diF /dt 5A 0.1 200 250 300 350 400 450 500 diF /dt [A/s] Fig. 6 Typ. recovery energy Erec vs. diF /dt Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a