Ultrafast, Soft Recovery Diode
VR 600 V
VF(Max) 1.7 V
Qrr 65 nC
DI (rec)M/dt 240 A/µs
HFA08TB60PbF
Parameter Max. Units
VR Cathode -to – Anode Voltage 600 V
IF @ TC = 100°C Continuous Forward Current 8.0
A
IFSM Single Pulse Forward Current 60
IFRM Maximum Repetitive Forward Current 24
PD @TC = 25°C Maximum Power Dissipation 36 W
PD @TC = 100°C Maximum Power Dissipation 14
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Absolute Maximum Ratings
HFA08TB60PbF
Package Type
Standard Pack
Orderable Part Number
Form Quantity
HFA08TB60PbF TO-220AC Tube 50 HFA08TB60PbF
Base part number
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• Ultra fast Recovery
• Ultra soft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA08TB60PbF is a state of the art ultra fast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it features a superb combination of characteristics which result in per-
formance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg
continuous current, the HFA08TB60PbF is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the ultra fast recovery diode product line features extremely low values
of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
ultra fast recovery diode features combine to offer designers a rectifier with lower noise and significantly lower switching
losses in both the diode and the switching transistor. These ultra fast recovery diode advantages can help to significantly
reduce snubbing, component count and heat sink sizes. The HFA08TB60PbF is ideally suited for applications in power
supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
HFA08TB60PbF
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VBR Cathode Anode Breakdown Voltage 600 ––– –––
V
IR = 100µA
VFM Max Forward Voltage
––– 1.4 1.7 IF = 8.0A
––– 1.7 2.1 IF = 16A
––– 1.4 1.7 IF = 8.0A ,TJ = 125°C
IRM Max Reverse Leakage Current ––– 0.3 5.0
µA VR=VRRatedSee Fig. 2
––– 100 500 TJ = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance ––– 10 25 pF VR = 200V See Fig. 3
LS Series Inductance ––– 8.0 ––– nH Measured lead to lead 5mm from
package body
Thermal Resistance 
Parameter Typ. Max. Units
Tlead Lead Temperature ––– 300
RJC Thermal Resistance, Junction to Case ––– 3.5
RJA Thermal Resistance, Junction to Ambient ––– 62 °C/W
RCS Thermal Resistance, Case to Heat Sink 0.50 –––
Wt Weight 2.0 ––– g
0.07 ––– (oz)
T ––– 12 Kg-cm
––– 10 lbf•in
Mounting Torque
Min.
–––
–––
–––
–––
–––
–––
6.0
5.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
trr
Reverse Recovery Time See Fig. 5
––– 18 –––
ns
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1 55 TJ = 25°C
trr2 ––– 55 90 TJ = 125°C
IRRM1 Peak Recovery Current See Fig. 6 ––– 3.5 5.0 A TJ = 25°C IF =8.0A
IRRM2 ––– 4.5 8.0 TJ = 125°C VR =200V
Qrr1 Reverse Recovery Charge See Fig.7 ––– 65 138
nC TJ = 25°C di/dt = 200A/µs
Qrr2 ––– 124 360 TJ = 125°C
di(rec)M/dt1 Peak Rate of Fall of Recovery Current ––– 240 –––
A/µs TJ = 25°C
di(rec)M/dt2 During tb See Fig.8 ––– 210 ––– TJ = 125°C
Conditions
––– 37
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
See Fig. 1
HFA08TB60PbF
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Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
HFA08TB60PbF
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Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt
trr(ns)
HFA08TB60PbF
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Fig. 9 - Reverse Recovery Parameter Test Circuit
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr and
IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
HFA08TB60PbF
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TO-220AC Package Outline (Dimensions are shown in millimeters (inches))
TO-220AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
E
E2
D
Q
L3
L
D2
e1
2x e C
SEE
VIEW "B"
2X b
D1
E/2
L4
A (Ref.)
L1
A2
VIEW "B"
3X b2 3X b4
A
A1
H1
E1
E3
D3
Ø P
HFA08TB60PbF
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Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-220AC N/A
RoHS Compliant Yes
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Mouser Electronics
Authorized Distributor
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International Rectifier:
HFA08TB60PBF