VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 PRELIMINARY Doc. No. 5SYA1534-01 Jan. 04 * Low-loss, rugged IGBT SPT chip-set * EMC friendly switching characteristics * Low profile compact baseless package for good power cycling * Suitable for snap-on gate-driver connection * Integrated PTC substrate temperature sensor Maximum rated values 1) 2) Parameter Collector-emitter voltage VCES min max Unit VGE = 0 V, Tvj 25 C 1700 V DC collector current IC Th = 60 C 225 A Peak collector current ICM tp = 1 ms, Th = 60 C 450 A 20 V 830 W Gate-emitter voltage Total power dissipation VGES Ptot -20 Th = 25 C, per switch (IGBT) DC forward current IF 225 A Peak forward current IFM 450 A Surge current IFSM 2700 A 10 s 4000 V 150 C VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1300 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Case operating temperature Storage temperature Mounting torques 1) Symbol Conditions Tc(op) -40 125 C Tstg -40 125 C M1 Base-heatsink, M5 screws 2 3 M2 Main terminals, M6 screws 4 6 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNS 0225U170100 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1700 VGE = 0 V, IC = 10 mA, Tvj = 25 C 3) Collector-emitter saturation voltage VCE sat IC = 225 A, VGE = 15 V 2.30 Tvj = 125 C 2.60 15 mA -500 500 nA 4.5 6.5 V VCE = 0 V, VGE = 20 V, Tvj = 125 C Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf IC = 30 mA, VCE = VGE, Tvj = 25 C IC = 225 A, VCE = 900 V, VGE = -15 V .. 15 V 1890 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 225 A, RG = 5.6 W, VGE = 15 V, Ls = 55 nH, inductive load VCC = 900 V, IC = 225 A, RG = 5.6 W, VGE = 15 V, Ls = 55 nH, inductive load 180 Tvj = 25 C 100 Tvj = 125 C 110 Tvj = 25 C 515 Tvj = 125 C 600 Tvj = 25 C 65 Tvj = 125 C 110 Tvj = 25 C 50 Tvj = 125 C 70 Tvj = 25 C 37 Tvj = 125 C 60 Turn-off switching energy Eoff VCC = 900 V, IC = 225 A, VGE = 15, RG = 5.6 W, Ls = 55 nH, inductive load Short circuit current ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1300 V, VCEM CHIP 1700 V Resistance, terminal-chip RCC'+EE' 3) nF 0.87 Tvj = 125 C VCC = 900 V, IC = 225 A, VGE = 15, RG = 5.6 W, Ls = 55 nH, inductive load Ls DC 1.45 135 Eon nC 20.7 Tvj = 25 C Turn-on switching energy Module stray inductance plus to minus V Tvj = 125 C IGES Input capacitance V mA Gate leakage current Qge 2.70 1.5 VCE = 1700 V, VGE = 0 V Gate charge Unit Tvj = 25 C ICES VGE(TO) max V Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage typ ns ns ns ns mJ mJ 1050 A 20 nH Th = 25 C 0.9 Th = 125 C 1.1 m Collector emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 2 of 9 5SNS 0225U170100 Diode characteristic values 2) Parameter Symbol Conditions Continous forward voltage 4) VF Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) 4) IF = 225 A VCC = 900 V, IF = 225 A, VGE = 15 V, RG = 5.6 W Ls = 55 nH inductive load Erec min typ max Tvj = 25 C 2.00 2.30 Tvj = 125 C 2.05 Tvj = 25 C 175 Tvj = 125 C 200 Tvj = 25 C 28 Tvj = 125 C 58 Tvj = 25 C 300 Tvj = 125 C 600 Tvj = 25 C 14 Tvj = 125 C 30 Unit V A C ns mJ Maximum rated and characteristic values according to IEC 60747-9 Forward voltage is given at chip level Thermal properties Parameter Symbol Conditions IGBT thermal resistance junction to heatsink 5) Diode thermal resistance junction to heatsink Rth(j-h)IGBT 5) Temperature sensor Rth(j-h)DIODE PTC min typ Heatsink: flatness < 50 m, roughness < 6 m without ridge Thermal grease: conductivity 0.8 W/mK, thickness 30 m < t < 50 m RT = RT0 exp [B (1/T - 1/T0)] RT0 = 1k (3%), B = -760 K (2%), T0 = 298 K max Unit 0.160 K/W 0.300 K/W Mechanical properties Parameter Symbol Conditions Dimensions L W x x H Typical , see outline drawing min typ max Unit 184.5 106.5 34.5 mm x Clearance distance DC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: Surface creepage distance DSC according to IEC 60664-1 Term. to base: 9.5 and EN 50124-1 Term. to term: 12.5 9.5 5) mm 11 Weight Mounting x mm 485 5) gr PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm For detailed mounting instructions refer to ABB Document No. 5SYA 2017 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 3 of 9 5SNS 0225U170100 Electrical configuration Outline drawing Note: all dimensions are shown in mm For mounting instructions refer to ABB document No. 5SYA 2017 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 4 of 9 5SNS 0225U170100 450 450 400 17V 400 350 15V 350 17V 15V 13V 11V 250 13V 300 9V IC [A] IC [A] 300 200 250 9V 200 150 150 100 100 50 11V 50 Tvj = 25 C 0 Tvj = 125 C 0 0 1 2 3 4 5 6 0 1 2 VCE [V] Fig. 1 3 4 5 6 VCE [V] Typical output characteristics, chip level Fig. 2 2.5 450 Typical output characteristics, chip level VGE = 15 V, RG = 5.6 ohm Tvj = 150 C VGE = 25 V 400 2 350 300 IC pulse / IC IC [A] 1.5 250 200 1 150 125 C 100 0.5 25 C 50 Chip Power terminals 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 Fig. 3 Typical transfer characteristics, chip level 500 1000 1500 2000 VCE [V] VGE [V] Fig. 4 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 5 of 9 5SNS 0225U170100 0.20 0.20 VCC = 900 V RG = 5.6 ohm VGE = 15 V Tvj = 125 C Ls = 55 nH 0.15 Eon, Eoff [J] Eon, Eoff [J] 0.15 VCC = 900 V IC = 225 A VGE = 15 V Tvj = 125 C Ls = 55 nH Eon 0.10 Eon 0.10 Eoff Eoff 0.05 0.05 0.00 0.00 0 Fig. 5 100 200 300 IC [A] 400 0 500 Typical switching energies per pulse vs collector current 15 25 10.00 VCC = 900 V IC = 225 A VGE = 15 V Tvj = 125 C Ls = 55 nH td(on), tr, td(off), tf [s] td(on) 0.10 tf tr td(off) 1.00 td(on) tr 0.10 tf VCC = 900 V RG = 5.6 ohm VGE = 15 V Tvj = 125 C Ls = 55 nH 0.01 0.01 0 100 200 300 400 500 0 IC [A] Fig. 7 20 Typical switching energies per pulse vs gate resistor td(off) td(on), tr, td(off), tf [s] 10 RG [ohm] Fig. 6 1.00 5 Typical switching times vs collector current 5 10 15 20 25 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 6 of 9 5SNS 0225U170100 100 20 Cies VCC = 900 V 15 10 VCC = 1300 VGE [V] C [nF] VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Coes 10 Cres 1 5 IC = 225 A Tvj = 25 C 0 0.1 0 5 Fig. 9 10 15 20 VCE [V] 25 30 0.0 35 Typical capacitances vs collector-emitter voltage Fig. 10 300 0.2 0.4 0.6 0.8 1.0 Qg [C] 1.2 1.4 1.6 1.8 Typical gate charge characteristics 2000 VGE 15 V Tvj = 150 C 1800 1600 1400 200 IC, IF [A] RT [ohm] 1200 100 1000 800 600 RT = RT 0e B (1 T -1 T0 ) 400 RT 0 = 1kW ( 3 %), B = -760 K ( 2%), T0 = 298 K 200 IGBT Diode 0 0 0 Fig. 11 20 40 60 80 100 Th [C] 120 Rated current vs temperature 140 0 160 20 40 60 80 100 120 140 T [C] Fig. 12 PTC temperature sensor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 7 of 9 5SNS 0225U170100 50 250 VCC = 900 V RG = 5.6 ohm Tvj = 125 C Ls = 55 nH 45 40 450 400 Irr 25C 200 350 125C 35 150 25 20 100 Qrr 15 IF [A] Erec [mJ] 30 Irr [A], Qrr [C] 300 250 200 150 Erec 10 100 50 50 5 0 0 100 200 300 0 0 500 400 0.0 Typical reverse recovery characteristics vs forward current 40 Erec [mJ] 3.0 Fig. 14 Typical diode forward characteristics, chip level 400 VCC = 900 V IF = 225 A Tvj = 125 C Ls = 55 nH Erec 35 2.0 350 30 300 25 250 20 200 15 150 10 Irr 100 5 Qrr 50 0 Irr [A], Qrr [C] Fig. 13 1.0 VF [V] IF [A] 0 0 5 10 15 20 25 RG [ohm] Fig. 15 Typical reverse recovery characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1534-01 Jan. 04 page 8 of 9 5SNS 0225U170100 1 Analytical function for transient thermal impedance: Zth(j-h) Diode n Z th (j-h) (t) = a R i (1 - e - t/t i ) Zth(j-h) IGBT i =1 0.01 IGBT Zth(j-h) [K/W] IGBT, DIODE 0.1 DIODE 0.001 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 i 1 2 3 4 Ri(K/kW) 145 9.72 1.13 3.42 ti(ms) 241 17.5 2.36 0.52 Ri(K/kW) 271 19.7 0.72 9.3 ti(ms) 239 18.9 1.3 1.3 5 10 Typical thermal impedance vs time This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1534-01 Jan. 04