V
RRM
= 800 V - 1200 V
I
F
= 6 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
• Types from 800 V to 1200 V V
RRM
Silicon Standard
Recover
y
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
800 1200
Conditions S6K (R) S6M (R) S6Q (R)
1000
S6K thru S6QR
2. Reverse polarity (R): Stud is anode.
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
2.50
666
167 167 167
840
1200
1.1 1.1
-55 to 150
12
1000800
10
S6Q (R)
1.1
10 10
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
S6K (R)
2.50 2.50
V
R
= 100 V, T
j
= 175 °C 12 12
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 160 °C
Conditions
700560
S6M (R)
V
R
= 100 V, T
j
= 25 °C
I
F
= 6 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
S6K thru S6QR
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
S6K thru S6QR
DO- 4 (DO-203AA)
J
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 10-32 UNF
B 0.424 0.437 10.77 11.10
C ----- 0.505 ----- 12.82
D ------ 0.800 ----- 20.30
E 0.453 0.492 11.50 12.50
F 0.114 0.140 2.90 3.50
G ----- 0.405 ----- 10.29
J ----- 0.216 ----- 5.50
M ----- φ0.302 ----- φ7.68
N 0.031 0.045 0.80 1.15
P 0.070 0.79 1.80 2.00
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
