BB804
Mar-15-20021
Silicon Variable Capacitance Diode
For FM tuners
Monolithic chip with common cathode
for perfect tracking of both diodes
Uniform "square law" characteristics
Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration
1
2
3
VPS05161
EHA07004
1
3
2
Type Marking Pin Configuration Package
BB804 SFs 1 = A1 2 = A2 3=C1/2 SOT23
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR18 V
Peak reverse voltage VRM 20
Forward current IF50 mA
Operating temperature range Top 100 °C
Storage temperature Tst
g
-55 ... 150
BB804
Mar-15-20022
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
VR = 16 V
IR- - 20 nA
Reverse current
VR = 16 V, TA = 65 °C
IR- - 200
AC characteristics
pF
Diode capacitance
VR = 2 V, f = 1 MHz
CT47.5-42
-
CT2/CT8
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
1.71 -1.65
rs-Series resistance
VR = 2 V, f = 100 MHz
0.18 -
-Q factor
VR = 2 V, f = 100 MHz
200 --
Q
ppm/K
Temperatur coefficient of CT
VR = 2 V, f = 1 MHz
TCc - 330 -
Diode capacitance 1) CTpF
VR = 2V, f = 1MHz
Subgroup:
1 43 - 44.5
2 44 - 45.5
3 45 - 46.5
1) The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contains diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
BB804
Mar-15-20023
Diode capacitance CT = f (VR)
f = 1MHz
10
EHD07050
C
T
R
V
-1 0
10
1
10
2
10V
0
10
20
30
40
50
60
70
pF
80
Capacitance ratio CTref / CT = f (VR)
per diode, Vref = parameter, f = 1MHz
0
EHD07051
C
T
R
V
0
T
C
51015V20
1
2
3
ref
C
T
T1V
C
C
T2V
T
C
Temperature coefficient TCc = f (VR),
per diode, f = 1MHz
10
EHD07052
TC C
R
V
-5
-4
10
10-3
K
-1
10 0
10 2
10V
1
101
