BB804 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics 2 Ideal HiFi tuning device when used in 1 low-distortion, back-to-back configuration VPS05161 3 1 2 EHA07004 Type Marking BB804 SFs Pin Configuration 1 = A1 2 = A2 Package 3=C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 18 Peak reverse voltage VRM 20 Forward current IF 50 mA Operating temperature range Top 100 C Storage temperature Tstg -55 ... 150 1 Value Unit V Mar-15-2002 BB804 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. IR - - 20 IR - - 200 CT 42 - 47.5 1.65 1.71 - - rs - 0.18 - Q - 200 - - TCc - 330 - ppm/K DC characteristics Reverse current nA VR = 16 V Reverse current VR = 16 V, TA = 65 C AC characteristics Diode capacitance pF VR = 2 V, f = 1 MHz Capacitance ratio CT2 /CT8 VR = 2 V, VR = 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz Temperatur coefficient of CT VR = 2 V, f = 1 MHz Diode capacitance 1) CT pF VR = 2V, f = 1MHz Subgroup: 1 43 - 44.5 2 44 - 45.5 3 45 - 46.5 1) The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packing unit (e.g. 8mm tape) contains diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement. 2 Mar-15-2002 BB804 Diode capacitance CT = f (VR) Capacitance ratio CTref / CT = f (V R) f = 1MHz per diode, Vref = parameter, f = 1MHz CT EHD07050 80 pF 70 EHD07051 3 C T1V CT C T ref CT 60 C T2V CT 2 50 40 30 1 20 10 0 10 -1 10 0 10 1 V VR 0 10 2 0 5 10 15 V 20 VR Temperature coefficient TCc = f (VR ), per diode, f = 1MHz EHD07052 10 -3 TC C 1 K 10 -4 10 -5 10 -1 100 101 V 10 2 VR 3 Mar-15-2002