VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
LA
RE
TIFIER
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2007
4-27-2007 REV B
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5186US thru 1N5190US
1N5186US − 1N5190US
DESCRIPTION APPEARANCE
This “fast recovery” rectifier diode series is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically
sealed with voidless-glass construction using an internal “Category I” metallurgical
bond. These devices are also available in military qualified axial-leaded packages
by deleting the “US” suffix. M icrosemi also offers numerous other rectifier prod ucts
to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Surface mount equivalent to the popular JEDEC
registered 1N5186 to 1N5190 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 100 to 600 Volts.
• Further options in screening in accordance with MIL-
PRF-19500/424 for JAN, JANT X, and JANTXV by adding
a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,
MV1N5187US, etc.
• Axial-leaded p ackage equivalents also avail able (see
separate data sheet for 1N5186 thru 1N5190)
• Fast recovery 3 Amp rectifiers 100 to 600 V
• Military and other high-reliability appl ications
• General rectifier applications i ncluding bridges,
half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 10oC/W junction to en d cap
• Thermal Impedance: 1.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 3.0 Amps @ TA =
25ºC and 0.700 Amps at TA = 150ºC
• Forward Surge Current: 80 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINATIONS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 539 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
FORWARD
VOLTAGE
VF
@ 9A (pulsed)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
TIME
trr
AVERAGE
RECTIFIED
CURRENT AMPS
IO
25oC 100oC 25oC 150oC
TYPE
VOLTS VOLTS MIN
VOLTS
MAX
VOLTS µA µA
ns AMPS AMPS
1N5186US
1N5187US
1N5188US
1N5189US
1N5190US
100V
200V
400V
500V
600V
120V
240V
480V
550V
660V
0.9V
1.5V
2.0
100
150
200
250
300
400
3.0
3.0
3.0
3.0
3.0
0.7
0.7
0.7
0.7
0.7