2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–95 March 1, 2000-00
SINGLE CHANNEL
IL66
DUAL CHANNEL
ILD66
QUAD CHANNEL
ILQ66
Photodarlington Optocoupler
FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
–1, 100% min. at
I
F
=2.0 mA,
V
CE
=10 V
–2, 300% min. at
I
F
=2.0 mA,
V
CE
=10 V
–3, 400% min. at
I
F
=0.7 mA,
V
CE
=10 V
–4, 500% min. at
I
F
=2.0 mA,
V
CE
=5.0 V
• Four Available CTR Categories per
Package Type
•BV
CEO
>60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled iso-
lators employing Gallium Arsenide infrared emit-
ters and silicon photodarlington detectors.
Switching can be accomplished while maintaining
a high degree of isolation between driving and
load circuits, with no crosstalk between channels.
Maximum Ratings
Emitter
Each Channel
Peak Reverse Voltage .................................... 6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
°
C......................... 100 mW
Derate Linearly from 25
°
C ................... 1.33 mW/
°
C
Detector
(Each Channel)
Power Dissipation at 25
°
C Ambient .......... 150 mW
Derate Linearly from 25
°
C ..................... 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 V
RMS
Total Package Power Dissipation at 25
°
C
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25
°
C
IL66...................................................... 3.3 mW/
°
C
ILD66 ................................................. 5.33 mW/
°
C
ILQ66................................................. 6.67 mW/
°
C
Creepage ....................................................
≥
7 min
Clearance ....................................................
≥
7 min
Comparative Tracking Index .............................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C.............................
≥
10
11
Ω
Storage Temperature................... –55
°
C to +125
°
C
Operating Temperature ............... –55°C to +100
°
C
Lead Soldering Time at 260
°
C ....................10 sec.
V
DE
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
3
6
5
4
Anode
Cathode
NC
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
1
2
3
4
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Dimensions in inches (mm)
Single Channel
Dual Channel
Quad Channel
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD/ILQ66
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–96 March 1, 2000-00
Electrical Characteristics,
T
A
=25
°
C
Parameter Symbol Min. Typ. Max. Unit Condition
GaAs Emitter
Forward Voltage
V
F
—1.25 1.5 V
I
F
=20 mA
Reverse Current
I
R
—0.1 10
µ
A
V
R
=6.0 V
Capacitance
C
0
—25 —pF
V
R
=0 V
Photodarlington
Breakdown Voltage Collector-Emitter BV
CEO
60 ——V
I
C
=1.0 mA,
I
F
=0
Collector-Base (IL66) BV
CBO
60 ———
I
C
=10
µ
A
Leakage Current, Collector-Emitter
I
CEO
—1.0 100 nA
V
CE
=50 V,
I
F
=0
Capacitance, Collector-Emitter ——3.4 —pF
V
CE
=10 V
Coupled Characteristics
Current Transfer Ratio IL/ILD/ILQ66-1 CTR 100 400 —%
I
F
=2.0 mA,
V
CE
=10 V
IL/ILD/ILQ66-2 300 500 —
I
F
=2.0 mA,
V
CE
=10 V
IL/ILD/ILQ66-3 400 500 —
I
F
=0.7 mA,
V
CE
=10 V
IL/ILD/ILQ66-4 500 750 —
I
F
=2.0 mA,
V
CE
=5.0 V
Saturation Voltage, Collector-Emitter
V
CEsat
—0.9 1.0 V
I
C
=10 mA,
I
F
=10 mA
Rise Time -1, -2, -4
t
r
——200
µ
s
V
CC
=10 V
Fall Time -1, -2, -4
t
f
——200
I
F
=2.0 mA,
R
L
=100
Ω
Rise Time -3
t
r
——200
I
F
=0.7 mA
Fall Time -3
t
f
——200
V
CC
=10 V,
R
L
=100
Ω
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
100101.1
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
IF - Forward Current - mA
VF - Forward Voltage - V
TA=25°C
TA=100°C
TA=-55°C
100
101.1
2.0
1.5
1.0
0.5
0.0
VCE = 1 V
VCE = 5 V
IF - LED Current - mA
NCTRce - Normalized CTRce
Normalized to:
TA = 25°C
VCE = 5 V
IF = 2 mA
Figure 3. Normalized non-saturated and saturated
CTRce versus LED current
Figure 4. Non-saturated and saturated collector
emitter current versus LED current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
.1 1 10 100 1000
Vce = 5 V
Vce = 1 V
IF - LED Current - mA
NCTRce - Normalized CTRce
Ta = 25°C
Vce = 5 V
IF = 10 m
a
Normalized to:
.1 1 10 100
10000
1000
100
10
1
.1
.01
.001
VCE = 5 V
VCE = 1 V
IF - LED Current - mA
ICE - Collector-emitter
current - mA
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD/ILQ66
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–97 March 1, 2000-00
Figure 9. Low/high propagation delay versus collector load
resistance and LED current
Figure 10. Switching waveform
Figure 11. Switching schematic
0 5 10 15 20
0
25
50
75
100
125
150
220Ω
2KΩ
10KΩ
IF - LED Current - mA
tpLH - Low/High Propagation
Delay - µs
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
VO
RL
VCC=10 V
F=10 KHz,
DF=50%
IF
Figure 5. Collector-base photocurrent versus LED
current
Figure 6. Collector-emitter current versus LED current
Figure 7. Non-saturated and saturated HFE versus
LED current
Figure 8. High/low propagation delay versus
collector load resistance and LED current
.1 1 1
0
10
0
Ta = 25°C
IF - LED Current - mA
Icb - Photocurrent- µa
.1
1
1
0
100
1000
IB - Base Current - µs
ICE - Collector-emitter
current - mA
.1 1 10 100 1000
10000
1000
100
10
1
.1
.01
.001
VCE = 1 V
VCE = 5 V
TA = 25°C
.1 1 10 100 1000
25000
20000
15000
10000
5000
0
VCE = 1 V
IB - Base Current - µA
HFE - Forward Gain
TA = 25°C
VCE = 5 V
0 5 10 15 20
0
1
0
2
0
3
0
4
0
5
0
220Ω
10KΩ
g
IF - LED Current - mA
tpHL - High/Low Propagation
Delay - µs
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
