TYN16X-600CT,127 - NXP SEMICONDUCTORS

TYN16X-600CT

SCR

3 September 2018 Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic

package intended for use in applications requiring high thermal cycling performance and high

junction temperature capability (Tj(max) = 150 °C).

2. Features and benefits

•High junction operating temperature capability

•High thermal cycling performance

•High voltage capability

•Planar passivated for voltage ruggedness and reliability

3. Applications

•Ignition circuits

•Motor control

•Protection circuits e.g. SMPS inrush current

•Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak reverse

voltage

- - 600 V

IT(AV) average on-state

current

half sine wave; Th ≤ 81 °C; Fig. 1 - - 10.2 A

IT(RMS) RMS on-state current half sine wave; Th ≤ 81 °C; Fig. 2;

Fig. 3

- - 16 A

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; Fig. 4; Fig. 5

- - 180 AITSM non-repetitive peak on-

state current

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

- - 198 A

Tjjunction temperature - - 150 °C

Static characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - - 15 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 150 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

500 - - V/µs

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 2 / 12

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode

2 A anode

3 G gate

mb n.c. mounting base; isolated

321

TO-220F (SOT186A)

sym037

A K

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

TYN16X-600CT TO-220F plastic single-ended package; isolated heatsink mounted; 1

mounting hole; 3-lead TO-220 "full pack"

SOT186A

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 3 / 12

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state

voltage

- 600 V

VRRM repetitive peak reverse

voltage

- 600 V

IT(AV) average on-state current half sine wave; Th ≤ 81 °C; Fig. 1 - 10.2 A

IT(RMS) RMS on-state current half sine wave; Th ≤ 81 °C; Fig. 2; Fig. 3 - 16 A

half sine wave; Tj(init) = 25 °C; tp = 10 ms;

Fig. 4; Fig. 5

- 180 AITSM non-repetitive peak on-

state current

half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 198 A

I2t I2t for fusing tp = 10 ms; SIN - 162 A²s

dIT/dt rate of rise of on-state

current

IG = 30 mA - 50 A/µs

IGM peak gate current - 4 A

VRGM peak reverse gate

voltage

- 5 V

PGM peak gate power - 10 W

PG(AV) average gate power over any 20 ms period - 1 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

(

)

(

)

(

)

114

132

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Th(max)

(°C)

Fig. 1. Total power dissipation as a function of average on-state current; maximum values

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 4 / 12

(

)

(

)

(

)

81 °C

Fig. 2. RMS on-state current as a function of heatsink

temperature; maximum values

)

(

)

(

)

Fig. 3. RMS on-state current as a function of surge

duration; maximum values

(

)

(

)

Tj(init) = 25 °C max

ITITSM

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 5 / 12

(

)

(

)

Tj(init) = 25 °C max

ITITSM

)

Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 6 / 12

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

with heatsink compound; Fig. 6 - - 4.5 K/WRth(j-h) thermal resistance

from junction to

heatsink without heatsink compound; Fig. 6 - - 6.5 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

in free air - 55 - K/W

003aaj457

10-1

10-2

Zth(j-h)

(K/W)

10-3

tp (s)

10-5 1 1010-1

10-2

10-4 10-3

d =

(2)

(1)

(1) with heatsink compound

(2) without heatsink compound

Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width

9. Isolation characteristics

Table 6. Isolation characteristics

Symbol Parameter Conditions Min Typ Max Unit

Visol(RMS) RMS isolation voltage from all terminals to external heatsink;

sinusoidal waveform; clean and dust

free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;

Th = 25 °C

- - 2500 V

Cisol isolation capacitance from anode to external heatsink;

f = 1 MHz; Th = 25 °C

- 10 - pF

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SCR

Product data sheet 3 September 2018 7 / 12

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - - 15 mA

ILlatching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - - 60 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 40 mA

VTon-state voltage IT = 32 A; Tj = 25 °C; Fig. 10 - 1.2 1.6 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.7 1.3 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 150 °C;

Fig. 11

0.2 0.4 - V

IDoff-state current VD = 600 V; Tj = 150 °C - 0.2 1 mA

IRreverse current VR = 600 V; Tj = 150 °C - 0.2 1 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 150 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

500 - - V/µs

tgt gate-controlled turn-on

time

ITM = 40 A; VD = 600 V; IG = 100 mA;

dIG/dt = 5 A/µs; Tj = 25 °C

- 2 - µs

tqcommutated turn-off

time

VDM = 402 V; Tj = 125 °C; ITM = 20 A;

VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/

dt = 50 V/µs; RGK(ext) = 100 Ω; (VDM =

67% of VDRM)

- 70 - µs

Tj (°C)

-50 1501000 50

003aaj449

IGT

IGT(25°C)

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aaj450

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 8 / 12

Tj (°C)

-50 1501000 50

003aaj451

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

)

(

)

(

)

(

)

(

)

Vo = 1.08 V; Rs = 0.0165 Ω

(1) Tj = 150 °C; typical values

(2) Tj = 150 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

Tj (°C)

-50 1501000 50

003aaj453

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 9 / 12

11. Package outline

Fig. 12. Package outline TO-220F (SOT186A)

WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 10 / 12

12. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

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Quick reference data — The Quick reference data is an extract of the

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

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Characteristics sections of this document is not warranted. Constant or

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SCR

Product data sheet 3 September 2018 11 / 12

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Trademarks

Notice: All referenced brands, product names, service names and

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WeEn Semiconductors TYN16X-600CT

SCR

Product data sheet 3 September 2018 12 / 12

13. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 6

9. Isolation characteristics...............................................6

10. Characteristics............................................................ 7

11. Package outline.......................................................... 9

12. Legal information..................................................... 10

For more information, please visit: http://www.ween-semi.com

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Date of release: 3 September 2018