TLP185(GB,E) - Toshiba - Datasheet.Live

TLP185

2012-02-14

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP185

Office Machine

Programmable Controllers

AC Adapter

I/O Interface Board

The TOSHIBA mini flat coupler TLP185 is a small outline coupler, suitable

for surface mount assembly.

TLP185 consist of a photo transistor optically coupled to a gallium arsenide

infrared emitting diode. Since TLP185 is smaller than DIP package, it’s

suitable for high-density surface mounting applications such as

programmable controllers

• Collector−emitter voltage: 80V (min)

• Current transfer ratio: 50% (min)

Rank GB: 100% (min)

• Isolation voltage: 3750Vrms (min)

• Operation Temperature:-55 to 110 ˚C

• Safety Standards

UL approved: UL1577, File No. E67349

cUL approved: CSA Component Acceptance Service No. 5A

File No.E67349

• BSI approved: BS EN60065:2002, Certificate No. 9020

BS EN60950-1:2006, Certificate No. 9021

• Option (V4) type

VDE approved: EN60747-5-2, Certificate No. 40009347

(Note): When a EN60747-5-2 approved type is needed,

Please designate “Option(V4)”

• Construction mechanical rating

Creepage distance : 5.0 mm(min)

Clearance : 5.0 mm(min)

Insulation thickness : 0.4 mm(min)

1: Anode

3: Cathode

4: Emitter

6: Collector

Unit: mm

TOSHIBA 11-4M1S

Weight: 0.08 g (Typ.)

Pin Configuration(top view)

TLP185

2012-02-14

Current Transfer Ratio

Current Transfer Ratio (%)

(IC / IF)

IF = 5mA, VCE = 5V, Ta = 25°C

Type Classification

Note1

Min Max

Marking Of Classification

Blank 50 400

Blank, YE, GR, GB, Y+, G, G+, B

Rank Y 50 150 YE

Rank GR 100 300 GR

Rank GB 100 400 GB

Rank YH 75 150 Y+

Rank GRL 100 200 G

Rank GRH 150 300 G+

TLP185

Rank BLL 200 400 B

(Note1): Ex Rank GB: TLP185 (GB,E

(Note) Application, type name for certification test, please use standard product type name, i, e.

TLP185(GB,E: TLP185

TLP185

2012-02-14

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: Pulse width ≤ 100 μs,f=100 Hz

Note 3: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.

Recommended Operating Conditions (Note)

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 48 V

Forward current IF ― 16 20 mA

Collector current IC ― 1 10 mA

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Characteristic Symbol Rating Unit

Forward current IF 50 mA

Forward current derating (Ta ≥ 90°C) ΔIF / °C -1.5 mA / °C

Pulse forward current (Note2) I

FP 1 A

Reverse voltage VR 5 V

LED

Junction temperature Tj 125 °C

Collector−emitter voltage VCEO 80 V

Emitter−collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation PC 150 mW

Collector power dissipation derating (Ta ≥ 25°C) ΔPC / °C -1.5 mW / °C

Detector

Junction temperature Tj 125 °C

Operating temperature range Topr −55 to 110 °C

Storage temperature range Tstg −55 to 125 °C

Lead soldering temperature Tsol 260 (10s) °C

Total package power dissipation PT 200 mW

Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C -2.0 mW / °C

Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 3) BVS 3750

Vrms

TLP185

2012-02-14

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF I

F = 10 mA 1.1 1.25 1.4 V

Reverse current IR V

R = 5 V — — 5 μA

LED

Capacitance CT V = 0, f = 1 MHz — 30 — pF

Collector−emitter

breakdown voltage V(BR) CEO I

C = 0.5 mA 80 — — V

Emitter−collector

breakdown voltage V(BR) ECO I

E = 0.1 mA 7 — — V

VCE = 48 V — 0.01 0.08 μA

Collector dark current ICEO

VCE = 48 V, Ta = 85°C — 2 50 μA

Detector

Capacitance

(collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn Typ. Max Unit

50 — 400

Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V

Rank GB 100 — 400

— 60 —

Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V

Rank GB 30 — —

IC = 2.4 mA, IF = 8 mA — — 0.3

— 0.2 —

Collector−emitter

saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA

Rank GB — — 0.3

Off−state collector current IC (off) V

F = 0.7V, VCE = 48 V — 1 10 μA

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance

(input to output) CS VS = 0V, f = 1 MHz — 0.8 — pF

Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1×1012 1014 — Ω

AC, 1 minute 3750 — —

AC, 1 second, in oil — 10000 —

Vrms

Isolation voltage BVS

DC, 1 minute, in oil — 10000 — Vdc

TLP185

2012-02-14

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr — 5 —

Fall time tf — 9 —

Turn−on time ton — 9 —

Turn−off time toff

VCC = 10 V, IC = 2 mA

RL = 100Ω

— 9 —

μs

Turn−on time ton — 2 —

Storage time ts — 30 —

Turn−off time toff

RL = 1.9 kΩ (Fig.1)

VCC = 5 V, IF = 16 mA

— 70 —

μs

Fig. 1 Switching time test circuit

IF VCC

VCE

OFF

4.5V

0.5V

VCC

ton toff

TLP185

2012-02-14

IF-Ta PC-Ta

Forward current I F (mA)

100

-20 0 20 40 60 80 100 120

Collector power dissipation PC (mW)

100

120

140

160

-20 0 20 40 60 80 100 120

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

IFP-DR IF-VF

Pulse forward current IFP (mA)

Forward current IF (mA)

0.1

100

0.6 0.8 1 1.2 1.4 1.6 1.8 2

Duty cycle ratio DR Forward voltage VF (V)

∆VF/∆Ta-IF IFP – VFP

Forward voltage temperature coefficient

ΔV

/ΔTa

(

mV/°C

)

-3.2

-2.8

-2.4

-2

-1.6

-1.2

-0.8

-0.4

0.1 1 10 100

Pulse forward current IFP (mA)

100

1000

0.6 1 1.4 1.8 2.2 2.6 3 3.4

Forward current IF (mA) Pulse forward voltage VFP (V)

*The above graphs show typical characteristic.

110˚C

85˚C

50˚C

25˚C

0˚C

-25˚C

-55˚C

Pulse width≤100μs

Ta=25 ˚C

100

1000

300

500

3000

10-3 10-2 10-1 100

Pulse width≤10μs

Repetitive frequency=100Hz

Ta=25 ° C

This curve shows the maximum

limit to the forward current.

This curve shows the

maximum limit to the

collector power dissipation.

This curve shows the maximum

limit to the pulse forward current.

TLP185

2012-02-14

IC-VCE

Collector current IC (mA)

0246 810

Collector current IC (mA)

0 0.2 0.4 0.6 0.8 1

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC-IF ICEO-Ta

Collector current IC (mA)

0.1

100

0.1 1 10 100

Collector dark current ID (ICEO) (μA)

0.0001

0.001

0.01

0.1

0 20 40 60 80 100 120

Forward current IF (mA) Ambient temperature Ta (°C)

IC/IF -IF

Current transfer ratio IC / IF (%)

100

1000

0.1 1 10 100

Forward current IF (mA)

*The above graphs show typical characteristic.

Ta=25 ˚C

VCE=10V

VCE=5V

VCE=0.4V

VCE=10V

VCE=5V

VCE=0.4V

24V

10V

VCE=48V

IF=2mA

IF=5mA

PC (max) Ta=25 ˚C

Ta=25 ˚C

TLP185

2012-02-14

VCE(sat) - Ta IC - Ta

Collector-Emitter saturation

Voltage VCE(sat) (V)

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

-60 -40 -20 0 20 40 60 80 100 120

Collector current IC (mA)

0.1

100

-60 -40 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C)

Switching time - RL Switching time - Ta

Switching time (μs)

100

1000

10000

1 10 100

Switching time (μs)

0.1

100

1000

-60 -40 -20 0 20 40 60 80 100 120

Load resistance RL (kΩ) Ambient temperature Ta (°C)

*The above graphs show typical characteristic.

IF=8mA, IC=2.4mA

IF=1mA, IC=0.2mA

VCE=5V

=0.5m

toff

Ta=25 ˚C

IF=16mA

VCC=5V

IF=16mA

VCC=5V

RL=1.9kΩ

ton

toff

TLP185

2012-02-14

Soldering and Storage

1. Soldering

1.1 Soldering

When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as

much as possible by observing the following conditions.

1) Using solder reflow

·Temperature profile example of lead (Pb) solder

·Temperature profile example of using lead (Pb)-free solder

2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)

Please preheat it at 150°C between 60 and 120 seconds.

Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.

3) Using a soldering iron

Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin

may be heated at most once.

Time (s)

(°C)

240

210

160

60 to 120s less than 30s

Package surface temperature

140

Time (s)

(°C)

260

230

190

60 to 120s

30 to 50s

180

Package surface temperature

This profile is based on the device’s

maximum heat resistance guaranteed

value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste

type used by the customer within the

described profile.

This profile is based on the device’s

maximum heat resistance guaranteed

value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste

type used by the customer within the

described profile.

TLP185

2012-02-14

2. Storage

1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.

2) Follow the precautions printed on the packing label of the device for transportation and storage.

3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,

respectively.

4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

6) When restoring devices after removal from their packing, use anti-static containers.

7) Do not allow loads to be applied directly to devices while they are in storage.

8) If devices have been stored for more than two years under normal storage conditions, it is recommended

that you check the leads for ease of soldering prior to use.

TLP185

2012-02-14

RESTRICTIONS ON PRODUCT USE

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in this document, and related hardware, software and systems (collectively “Product”) without notice.

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

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