© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 0 1Publication Order Number:
NRVTS560EMFS/D
NRVTS560EMFS
Exceptionally Low Leakage
Trench-based Schottky
Rectifier
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Typical Applications
•Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•Instrumentation
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
•Lead Finish: 100% Matte Sn (Tin)
•Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL 1 Requirements
Device Package Shipping†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
60 VOLTS
1,2,3 5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE0560 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TE0560
AYWWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NRVTS560EMFST1G SO−8 FL
(Pb−Free) 1500 /
Tape & Ree
l
NRVTS560EMFST3G SO−8 FL
(Pb−Free) 5000 /
Tape & Ree
l
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NRVTS560EMFS
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR60
V
Average Rectified Forward Current
(Rated VR, TC = 168°C) IF(AV) 5.0 A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 167°C) IFRM 10 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 60 mJ
ESD Rating (Human Body Model) TBD
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC 2.4 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(iF = 2.5 Amps, TJ = 25°C)
(iF = 5.0 Amps, TJ = 25°C)
(iF = 2.5 Amps, TJ = 125°C)
(iF = 5.0 Amps, TJ = 125°C)
vF0.50
0.55
0.41
0.50
−
0.61
−
0.59
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR−
230
4mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
NRVTS560EMFS
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3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.70.50.40.30.20.10
0.1
1
10
100
0.80.60.50.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
4030252015105
1.E−06
45353020105
Figure 5. Typical Junction Capacitance
VR, REVERSE VOLTAGE (V)
0.1
100
1000
iF, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
0.9
iF, INSTANTANEOUS FORWARD
CURRENT (A)
35 45
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
15 25
1.E−05
1.E−04
1.E−03
1.E−02
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
10
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−01
Figure 6. Current Derating per Device
TC, CASE TEMPERATURE (°C)
8060 140120200
0
3
6
9
IF(AV), AVERAGE FORWARD CURRENT (A)
12
40 100
Square Wave
DC
RqJC = 2.4°C/W
TJ = 25°C
0.6 0.8 0.4 0.7
40
TA = 175°C
1.0
5550 60
1.E−07 6050 55
1.E−06
1
2
5
1
4
8
11
7
10
TA = 150°CTA = 175°C
TA = 175°CTA = 175°C
160 175
NRVTS560EMFS
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4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
64310
0
2
6
10
14
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
Square Wave
dc
IPK/IAV = 5
IPK/IAV
= 20 IPK/IAV = 10
25
4
8
12
16
18
0.10.00001
PULSE TIME (s)
10
0.1
0.01
0.0001 0.001 0.01 1.0 10 1000.000001
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
1000
R(t) (C/W)
1
0.10.00001
PULSE TIME (s)
100
10
0.1
0.01
0.0001 0.001 0.01 1.0 10 1000.000001
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
1000
R(t) (C/W)
Figure 8. Typical Thermal Characteristics
1
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
NRVTS560EMFS
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5
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
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P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NRVTS560EMFS/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
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