2SD414, 415,2SB548, 549 28D414, 415.2SB548, 549 NPN /PNP TEYHY PUBS Yay b7vyva2asy NPN,/PNP SILICON EPITAXIAL TRANSISTOR (RAR BAS tA Audio Frequency Power Amplifier B/FEATURES *WA30W~S0WDA-F Ar VYIOKS4 ABUTS. Suitable for driver stages of 30 to 50 watts audio amplifier. HH E/ PACKAGE DIMENSIONS (Unit:mm)} RINE CHS, High voltage. -SMAX. TREAO RT BABIES. wi Jt. 7 Package in plastic case for easy mounting. 7 i "3 tr WN RKEH/ ABSOLUTE MAXIMUM RATINGS (T, =25) | S36 | LL = 1,2 a ae 9 | a | Sa Dv Wo 7 L 7 7 +N ATE AE [_ Veso _ ___ 71007120 _- __ Vv _-. 0.75 20.3 Marking 179 +34 THRE Vero | - 80780 | -100/100) ov EY Ziy 9 +N RHEE | Vepo | 5.0/5.0 Lov hes) ls IVI BH Teepe) | 0.8/0.8 A ms Es D7 9S | Towursey*) 1.8/1.5 A LAAN | | A aie Pe eergS8e3 2 elec comes et 7 Ya vm eT 20 to mounting plane CRAP al FE | Tete 55~ +150 c 3. Base * PWSl0ms, duty cycle<509% MSaAStE ELECTRICAL CHARACTERISTICS (T, =25) iq 8 i | & He | MIN. | TYP. | MAX. | fi IVI 9 Le ETE Iczo Von=80V, Ip=0 | 1.0 | uA Fly F Le RET eso View =3.0V, Io=0 aa ELC cL bre _ Vor =5.0V, Ig=1. OmA* | 20 ATE hres Vez=5.0V, I=200mA* | 40 | 80) 32); | IU PART: | Vercaty | Io=500mA, Ip=50mA* | 05) 20) Vv A RRAAVE LE Vercat) | I=500mA, Ip=50mA* | 1.0 1.5 Vv AV RIA fy Vou=5.0V, Ic=100mAt~S~S 80 | TN IVI VRB Cov | Vop=10V, Ip=0, f=1.0MHz | 18) | opF E) MRS URE CIs, PNP OMMEA SEH THO FUL. No polarity * NV ARIE PWS350us, duty cycle<2% Pulsed hyg 4 /hrg Classification Q : 100~200 P : 160~320 767