UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-039,B
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC327/328
TO-92
1
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-emitter voltage
: BC337
: BC338
VCES
50
30
V
V
Collector-emitter voltage
: BC337
: BC338
VCEO
45
25
V
V
Emitter-base voltage VEBO 5 V
Collector current (DC) Ic 800 mA
Collector dissipation Pc 625 mW
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter breakdown voltage
: BC337
: BC338
BVCEO Ic=10mA, IB=0
45
25
V
V
Collector-emitter breakdown voltage
: BC337
: BC338
BVCES Ic=0.1mA, VBE=0
50
30
V
V
Emitter-base breakdown voltage BVEBO IE=0.1mA, Ic=0 5 V
Collector Cut-off Current
: BC337
: BC338
ICES
VCE=45V, IB=0
VCE=25V, IB=0
2
2
100
100
nA
nA
DC current gain hFE1
hFE2
VCE=1V, Ic=100mA
VCE=1V, Ic=300mA
100
60
630
Collector-emitter saturation voltage VCE(sat) Ic=500mA, IB=50mA 0.7 V