DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES * Low current (max. 100 mA) PIN * High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION * Telephony * Professional communication equipment. handbook, halfpage DESCRIPTION 3 3 NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER MMBTA42 2 2 Top view 7D MAM255 Note Fig.1 Simplified outline (SOT23) and symbol. 1. = p: made in Hong Kong. = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 300 V VCEO collector-emitter voltage open base - 300 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation - 250 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Apr 11 2 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 200 V - 100 nA IEBO emitter cut-off current IC = 0; VEB = 6 V - 100 nA hFE DC current gain VCE = 10 V IC = 1 mA 25 - IC = 10 mA 40 - IC = 30 mA 40 - VCEsat collector-emitter saturation voltage IC = 20 mA; IB = 2 mA - 500 mV VBEsat base-emitter saturation voltage IC = 20 mA; IB = 2 mA - 900 mV Cre feedback capacitance IC = ic = 0; VCB = 20 V; f = 1 MHz - 3 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 50 - MHz 2000 Apr 11 3 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2000 Apr 11 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 4 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Apr 11 5 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 NOTES 2000 Apr 11 6 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 NOTES 2000 Apr 11 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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