MMBTA42T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation 2000 Apr 11

DISCRETE SEMICONDUCTORS

MMBTA42

NPN high-voltage transistor

, halfpage

M3D088

2000 Apr 11 2

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistor MMBTA42

FEATURES

•Low current (max. 100 mA)

•High voltage (max. 300 V).

APPLICATIONS

•Telephony

•Professional communication equipment.

DESCRIPTION

NPN high-voltage transistor in a SOT23 plastic package.

PNP complement: MMBTA92.

MARKING

Note

1. ∗= p: made in Hong Kong.

∗= t: made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

MMBTA42 7D∗

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −300 V

VCEO collector-emitter voltage open base −300 V

VEBO emitter-base voltage open collector −6V

Ccollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2000 Apr 11 3

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistor MMBTA42

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB = 200 V −100 nA

IEBO emitter cut-off current IC= 0; VEB =6V −100 nA

hFE DC current gain VCE =10V

C= 1 mA 25 −

IC=10mA 40 −

C=30mA 40 −

CEsat collector-emitter saturation voltage IC= 20 mA; IB=2mA −500 mV

VBEsat base-emitter saturation voltage IC= 20 mA; IB=2mA −900 mV

Cre feedback capacitance IC=i

c= 0; VCB =20V;

f = 1 MHz −3pF

Ttransition frequency IC= 10 mA; VCE =20V;

f = 100 MHz 50 −MHz

2000 Apr 11 4

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistor MMBTA42

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

2000 Apr 11 5

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistor MMBTA42

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 Apr 11 6

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistor MMBTA42

NOTES

2000 Apr 11 7

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistor MMBTA42

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000 69

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Printed in The Netherlands 603506/01/pp8 Date of release: 2000 Apr 11 Document order number: 9397 750 06939