Mechanical Data
• Case: SOT-23 Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approx.)
• Device Marking: BC807-16 5A1
BC807-25 5B
BC807-40 5C
BC807-16
BC807-25
BC807-40
PNP Silicon
General Purpose
Transistors
Features
• Capable of 0.3Watts of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0) 45 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0) 50 --- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(IE=1.0uAdc, IC=0) 5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=45Vdc,IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=40V dc,IE=0) --- 0.2 uAdc
IEBO Emitter Cutoff Current
(VEB=4.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
BC807-16
BC807-25
BC807-40
100
160
250
250
400
600
---
---
---
hFE(2) DC Current Gain
(IC=500mAdc, VCE=1.0Vdc) 40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc) --- 0.7 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=500mAdc,IB=50mAdc) --- 1.2 Vdc
SMALL SIGNAL CHARACTERISTICS
fT Current-Gain-Bandwidth Product
(VCE=5.0V, f=100MHz, IC=10mA) 100 --- MHz
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
SOT-23
www.mccsemi.com
Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
-1000-0.1 -10 -100
100
-1.0
VCE = -1.0 V
TA = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0 -10 -1000-100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -1.0 V
VCE(sat) @ IC/IB = 10
Figure 4. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
-1.0 -10 -100 -1000
-2.0
-1.0
0
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
θVC for VCE(sat)
θVB for VBE
MCC
BC807-16 thru BC807-40
www.mccsemi.com
Revision: 2 2003/04/30
