AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS 1100V@150 ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 9 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View D Bottom View D D G G S S S G AOD2N100 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain CurrentB Pulsed Drain Current TC=100C C Maximum 1000 Units V 30 V 2 ID 1.2 A IDM 7 Avalanche Current C IAR 1.9 A Repetitive avalanche energy C EAR 54 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 108 5 83 mJ V/ns W 0.7 -50 to 150 W/ oC C 300 C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.0 March 2013 PD TJ, TSTG TL Symbol RJA RCS Typical 45 Maximum 55 Units C/W 1.2 0.5 1.5 C/W C/W RJC www.aosmd.com Page 1 of 6 AOD2N100 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions Min ID=250A, VGS=0V, TJ=25C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250A, VGS=0V, TJ=150C 1100 ID=250A, VGS=0V V V/ oC 1 VDS=1000V, VGS=0V 1 VDS=800V, TJ=125C 10 Gate-Body leakage current VDS=0V, VGS=30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250A 100 3.3 A 4 4.5 n V 9 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 7.5 gFS Forward Transconductance VDS=40V, ID=1A 2 VSD Diode Forward Voltage IS=1A,VGS=0V S 0.76 IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current 7 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 380 477 580 pF 20 31 45 pF 1.5 2.7 4.0 pF 1.5 3.1 4.8 6 9.7 15 nC VGS=10V, VDS=800V, ID=2A Qgs Gate Source Charge 2.6 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 20 ns tr Turn-On Rise Time 19 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/s,VDS=100V 220 287 350 Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/s,VDS=100V 1.5 2.2 3.0 VGS=10V, VDS=500V, ID=2A, RG=25 29 ns 21 ns ns C A. The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. H. L=60mH, IAS=1.9A, VDD=150V, RG=10, Starting TJ=25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 March 2013 www.aosmd.com Page 2 of 6 AOD2N100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 6.5V VDS=40V 2.5 6V ID(A) 2 ID (A) -55C 10V 1.5 1 125C 5.5V 1 25C 0.5 VGS=5V 0 0.1 0 5 10 15 20 25 30 2.00 4.00 6.00 8.00 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 15 2.5 RDS(ON) ( ) 12 Normalized On-Resistance 18 VGS=10V 9 6 3 10.00 VGS=10V ID=1A 2 1.5 1 0.5 0 0 0 1 2 3 4 -100 5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID=30A 40 1E+00 1 IS (A) BVDSS (Normalized) 1E+01 1.1 125 125C 1E-01 25C 1E-02 0.9 25 1E-03 0.8 1E-04 -100 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev.1.0 March 2013 www.aosmd.com 0 0.2 0.4 0.6 0.8 1 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AOD2N100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=800V ID=2A Capacitance (pF) VGS (Volts) 12 9 6 1000 Ciss 100 Coss 10 Crss 3 0 1 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 100 TJ(Max)=150C TC=25C 800 RDS(ON) limited Power (W) 10 ID (Amps) 1 10s 100s 1 1ms DC 0.1 10ms 600 400 200 TJ(Max)=150C TC=25C 0.01 0 1 10 100 1000 10000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Z JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.5C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 March 2013 www.aosmd.com Page 4 of 6 AOD2N100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 2.5 80 Current rating ID(A) Power Dissipation (W) 100 60 40 20 2 1.5 1 0.5 0 0 0 25 50 75 100 125 TCASE (C) Figure 12: Power De-rating (Note B) 150 0 25 50 75 100 125 TCASE (C) Figure 13: Current De-rating (Note B) 150 400 TJ(Max)=150C TA=25C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Z JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev.1.0 March 2013 www.aosmd.com Page 5 of 6 AOD2N100 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 March 2013 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6