AOD2N100
1000V,2A N-Channel MOSFET
General Description Product Summary
1100V@150℃
I
D
(at V
GS
=10V) 2A
R
DS(ON)
(at V
GS
=10V) < 9Ω
100% UIS Tested!
100% R
g
Tested!
Symbol
V
DS
The AOD2N100 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply
designs.
V
DS
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Drain-Source Voltage
1000
G
D
S
G
D
G
D
Top View
TO252
DPAK
Bottom View
AOD2N100
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
°C/W
°C/W
1.2 0.5
1.5
mJ
Avalanche Current
C
54Repetitive avalanche energy
C
Derate above 25
o
C83
0.7
A1.9
Single pulsed avalanche energy
H
108 mJ
V/ns5
P
D
V
Drain-Source Voltage
1000
V±30Gate-Source Voltage
T
C
=100°C A
I
D
T
C
=25°C 2
1.2
7Pulsed Drain Current
C
Continuous Drain
Current
B
°C
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation
B
Maximum Junction-to-Ambient
A,G
T
C
=25°C
-55
Maximum
Thermal Characteristics Units
°C/W45
Parameter Typical
W
W/
o
C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds 300
Rev.1.0 March 2013
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AOD2N100
Symbol Min Typ Max Units
1000 1100
BV
DSS
/∆TJ 1V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.3 4 4.5 V
R
DS(ON)
7.5 9 Ω
g
FS
2 S
V
SD
0.76 1 V
I
S
Maximum Body-Diode Continuous Current 2 A
I
SM
7 A
C
iss
380 477 580 pF
C
oss
20 31 45 pF
C
rss
1.5 2.7 4.0 pF
R
g
1.5 3.1 4.8 Ω
Q
g
6 9.7 15 nC
Q
gs
2.6 nC
Q
gd
3.5 nC
t
D(on)
20 ns
t
r
19 ns
t
D(off)
29
ns
Static Drain-Source On-Resistance V
GS
=10V, I
D
=1A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=500V, I
D
=2A,
R
G
=25Ω
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
BV
DSS
µA
V
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
V
DS
=0V, V
GS
=±30V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
DSS
Zero Gate Voltage Drain Current V
DS
=1000V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,
I
D
=250µA
V
DS
=800V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=1A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=10V, V
DS
=800V, I
D
=2A
Gate Source Charge
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
t
D(off)
29
ns
t
f
21 ns
t
rr
220 287 350 ns
Q
rr
1.5 2.2 3.0 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=2A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
G
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=2A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.9A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev.1.0 March 2013 www.aosmd.com Page 2 of 6
AOD2N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.5
1
1.5
2
2.5
3
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5V
6.5V
10V
6V
5.5V
0.1
1
10
2.00 4.00 6.00 8.00 10.00
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
VDS=40V
25
°
C
125
°
C
0
3
6
9
12
15
18
012345
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
I
D
=1A
40
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0 0.2 0.4 0.6 0.8 1
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
ID=30A
25
°
125
°
Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0 March 2013 www.aosmd.com Page 3 of 6
AOD2N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 3 6 9 12 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=800V
ID=2A
1
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000 10000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
TJ(Max)=150°C
TC=25°C
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev.1.0 March 2013 www.aosmd.com Page 4 of 6
AOD2N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note B)
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note B)
0
100
200
300
400
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
TJ(Max)=150°C
TA=25°C
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev.1.0 March 2013 www.aosmd.com Page 5 of 6
AOD2N100
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
+
VDC
L
Vgs
Vds
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
VDC
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.1.0 March 2013 www.aosmd.com Page 6 of 6