1N504 Si-Di =1N503: 100V BY 126.,.127, BY 133...135, 1N4002...07, ++ 4N 505 Si-Di =1N503: 200V BY 126, ,.127, BY 133...134, 1N4003. .07, ++ 1N506 Si-Di =1N503: 300V BY 126...127, BY 133...134, 1N4004...07, 4+ 1.N507 Si-Di =1N503: 400V BY 126...127, BY 133...134, 1N4004...07, +4 1N508 Si-Di =1N503: 600 BY 126...127, BY 138...134, 1N4005...07, ++ 1.N509 Si-Di =1N503: 800V BY 127, BY 133, BYW 42, 1N4006...07, ++ INS1O SED TNS 03: 1000 BY 127, BY 193, BY 43, 14007, 44 1N54 old Si-Di Rr, 50V, 1A BY 126...197, BY 133...133, 1N4001,..07,4) 1N512 Si-Di =1N511: 100V BY 126...127, BY 133...135, 1N4002...07, ++ 1N513 S-Di =1N511: 200V BY 126...127, BY 133...134, 1N4003...07, ++ +NS14 S-Di =1N511: 300V BY 126...127, BY 133...134, 1N4004...07, ++ 1N515 Si-Di =1N511: 400 BY 126...127, BY 133...134, 1N4004...07, +4 1N516 Si-Di =1N511: 600V BY 126...127, BY 133...134, 1N4005...07, +4 1N517 Si-Di =1N511: 800 BY 127, BY 183, BYW 42, 1N4006...07, ++ INS18 SDI = NB 115 1000V BY 127, BY 133, BYW 43, 14007, ++ TN519 ald Si-Di Rr, SOV, 1,254 BY 126...127, BY 133...138, 7N4001...07, ++ 1N520 Si-Di =1N519: 100V BY 126...127, BY 133...138, 1N4002....07, ++ 1 N52 Si-Di =1N519: 200V BY 126...127, BY 133...134, 1N4003...07, ++ 1N522 Si-Di =1N519: 300V BY 126...127, BY 133...134, 1N4004,..07, ++ 1N523 Si-Di =1N519: 400V BY 126...127, BY 133...134, 1N4004...07, ++ 1N524 Si-Di =1N519: 600V BY 126...127, BY 133...134, 1N4005...07, 44 1N525 Si-Di =1N519: 800V BY 127, BY 133, BYW 42, 1N4006...07, ++ 1N 526 SDE INST 10000 ee BY 127, BY 133, BYW 43, 1N4007, ++ 1N527) CUS CGDE CU TOV CO OF 2...114, AA 116, AA 119, 1N6O,++ 1N530 SemSld,Tix $i-Di Rr, 1OOV, 0,38 ~ 34aCO-4 a BA 187...159, BY 402...405, 1N4002...07 4 1N531 Si-Di =1N530: 200V 34a DO-1 ...159, BY 403...405, 1N4003,..07, ++ 4N532 Si-Di =1N530: 300V 34a D0-1 ...159, BY 404...405, 1N4004...07, ++ 1N533 Si-Di =1N530: 400V 34a DO-1 ...189, BY 404,,.405. 1N4004...07, ++ 1N534 Si-Di =1N530: 500V 34a DO-4 ...159, BY 405, 1N4005...07, ++ 1.N535 Si-Di =1N530: 600V ; Ba oo 189, BY 405, 1N4005...07, ++ 1N536 Rea,Tix++ Si-Di Rr, 50V, 0,758 34a DO-1 6...127, BY 133...136, 1N4001...07, ++ 1N537 Si-Di =1N536: 100V 3a DO- 127, BY 133...135, 1N4002...07, +4 1N538 Si-Di =1N536: 200V 34a DO-t 427, BY 133...134, 1N4003....07, ++ 1N 539 Si-Di =1N536: 300V 34a DO-1 127, BY 133...134, 1N4004...07, +4 1N 540 SDE INS86400V0 a BY 126.127, BY 133...134, 1N4004...07, +4 1N541 USATho Ge-Di Dem, hi-ohm, 50V,30mA 31a DO-7 AATI9 3a AA 113, AA 119, 1N34, 1N54, 1N6O N54 Ge Di ING41: Matched Pair x3la_ 2x07 AATI9 Sta AA 113, AA 119, 1N34, 9N54. INGO 1 N543(A) ald S-Di Rr, 1500V, 10...35mA 34a D013 DM 513, EM 516, RGP 01-16, SHG 1,5 1N544(A) _ old Si-Di Rr, 1200V, 15...75mA da - _DM 513, EM 516, RGP 01-16, SHG 1,5 1547/8) ReaTixe+ S-Di OR BOOYAH _ __ BY 126...127, BY 133...134, 1N4005, +4 1N548 ald Si-Di Rr, 900, 0,3A 31a (23x9mmB) BA 159, BY 127, BY 133, 1N4007, +4 INS49 old SDE INSAB 1200V0 ____3ia _(23x9mmB) BY 127, BY 133, BYX 95, EM 513, He +N 550 Sem.Tix++ S-Di Rr P, 100V, 0,58 32a DO-4 BYX 38/300, BYX 39/600 1N551 Si-Di =1N550: 200V 32a DO-4 BYX 38/300, BYX 39/600 1N552 Si-Di =1N550: 300V 32a D0-4 BYX 38/300, BYX 39/600 1. N553 Si-Di =1N550: 400V 32a DO-4 BYX 38/600, BYX 39/600 1N554 Si-Di =1N550: 500V 32a DO-4 BYX 38/600, BYX 39/600 1N555_ Si-Di =1NG50:600V - 32a _DO-4 BYX 38/600, BYX 39/600 1.N 558 TK SeDi RR 18004, 15mMA Sa OT BAY 91, RGP 01-16, +N 560 SemTint+ SEDI Rr, 800V, 0,25A 34a DOI BY 127, BY 133, BYW 42, G 1K, 1N4006, ++ 1N561 Si-Di =1N560: 1000V 34a DO-1 BY 127, BY 133, BYW 43, G 1M, 1N4007, ++ 1 N 562 USA Si-Di Rr P, B00V, 0,4A 32a D0-4 BYX 38/900, BYX 39/800 1N563 SSL HINO 1000V Bea DO-4 YX 38/1200, BYX 39/1000. iN566 SSCs (S~*=<~ EC esr DO-7 oe oe 1N567, side Sem Ge-Di 8, 125, 300s _ _ 31a __D0-7 ee oo oo 1N 568 ldc,it,Sem Ge-Di- S, 50V, 80ns - 31a 00-7 - - 1N 569 Ido,lttSem _Ge-Di Uni, 25 Be Bia BO-7 _ AA 139, 1N270 USA Rr, 1500V,0,75A oo a _ _ SN <dp . 34a DONS Rr, 380V, 0,25A - Rr, 380V, 0,3A : 1 NS575(A) Rr, 380V, 0,35A - TNS76(A) __ RR 380.048 ee 1N58t Gen Rr, 380V, 0,25A - 1N582 Gen Rr, 380V, 0,38 1N 583 Gen Rr, 380V, 0,258 - inses Gen GDR BBO. OMA . ee ae te ee __ 1N 588 USA Si-Di Rr, 1500V, 0,1A 34a DO-1 BAY 91, RGP 01-16 iN589 =_sUSA SDs =A 1500V,0,25A a 84a DOT BAY 91, M513, EM 516, GP TOY - 1N590 Ssi Si-Di Ri, 1800V, 25mA =34a =D0-1 BAY 91, RGP 01-16 1N591 _ Si-Di = 1 N50: _ ee 8d DOT a BAY OT, RGPOt-16 _ in596 =| ~*USA Si-Di Rr, BOOV, 0,150 34a DO-1 BA 158...159, BAY 89...90, BY 207 1N597 S-Di =1N596: 800V 34a 00-4 BA 159, BAY 90, BY 204/8 1N598 Si-Di =1N596: 1000V | 34a DOA BA 159, BAY 90, BY 204/10 1 NSQ9(A) USATiK S-Di Rr, 50V,0,4A - 34a DO-1 BA 157...159, BY 401...405, 1N4001...07, +4 1N600(A) Si-Di =1N599: 100V 34a DO-1 BA 157...159, BY 402...405, 1N4002...07, ++ +N 601(A) Si-Di =1N5Q9: 150V 34a DO-t BA 157...159, BY 403...405, 1N4003...07, ++ 1.N602(A) Si-Di =1N599: 200V 34a DO-1 BA 157,..159, BY 403...405, 1N4003...07, ++ 1. N603(A) Si-Di =1N599: 300V 34a DO-1 BA 157...159, BY 404...405, 1N4004,..07, ++ 1N604(A) Si-Di =1N599: 400V 34a 00-1 BA 157...159, BY 404...405, 1N4004...07, +4 1 N605(A) Si-Di =1N599: 500V 34a D0-1 BA 158...159, BY 405, 1N4005...07, ++ 1 N606(A) SDL = TNS 99: 600 a 34a DOr BA 188... 159, BY 405, 1N4005...07, 4 1N607(A) USATix Si-Di P Rr, 50V, 1A 32a D0-4 BYX 38/300, BYX 39/600 1 N608(A) Si-Di =1NGO7(A): 100 32a DO-4 BYX 38/300, BYX 39/600 1. N609(A) Si-Di =1N607(A): 150V 32a D0-4 BYX 38/300, BYX 39/600 + NGIO(A) Si-Di =1N607(A): 200V 32a DO-4 BYX 38/300, BYX 39/600 1 N611(A) Si-Di =1N607(A): 300V 32a D0-4 BYX 38/300, BYX 39/600 1N612(A) Si-Di = 1N607(A): 400V 32a D0-4 BYX 38/600, BYX 39/600 1N613(A) Si-Di =1N607(A): 500V 32a 00-4 BYX 38/600, BYX 39/600 1N614(A) Si-Di =1N607(A): 600V 32a D0-4 BYX 38/600, BYX 39/600 INGOPR....6148 SDT = INGO (A)...614(A): _ 32h 00-4 BK 28/6 00R, BYX 39/600R _ ve 1N615 USA Ge-Di Uni, 300V, 75mA a 3a (OT - ; _ 1N6I6 USA Ge-Di Dem, 30V, 30mA 3a 00-7 AA 113...114, AA 116, AA 119, 1N6O, +4