VISHAY
BAT54 / 54A / 54C / 54S
Document Number 85508
Rev. 1.5, 18-Jun-04
Vishay Semiconductors
www.vishay.com
1
Top View
Top View
BAT54
BAT54C
BAT54A
BAT54S
18034
12
3
12
3
12
3
12
3
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on next page.
Part Ordering code Marking Remarks
BAT54 BAT54-GS18 or BAT54-GS08 L4 Tape and Reel
BAT54A BAT54A-GS18 or BAT54A-GS08 L42 Tape and Reel
BAT54C BAT54C-GS18 or BAT54C-GS08 L43 Tape and Reel
BAT54S BAT54S-GS18 or BAT54S-GS08 L44 Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current IF2001) mA
Repetitive peak forward current IFRM 3001) mA
Surge forward current current tp < 1 s IFSM 6001) mA
Power dissipation Ptot 230 mW
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Document Number 85508
Rev. 1.5, 18-Jun-04
VISHAY
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambiant air
RthJA 4301) °C/W
Junction temperature Tj = Tstg - 65 to + 150 °C
Storage temperature range TS- 65 to + 150 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Reverse Breakdown voltage IR = 100 µA pulses V(BR) 30 V
Leakage current Pulse test tp < 300 µs, δ < 2 % at
VR = 25 V
IR2µA
Forward voltage IF = 0.1 mA, tp < 300 µs, δ < 2 % VF240 mV
IF = 1 mA, tp < 300 µs, δ < 2 % VF320 mV
IF = 10 mA, tp < 300 µs, δ < 2 % VF400 mV
IF = 30 mA, tp < 300 µs, δ < 2 % VF500 mV
IF = 100 mA, tp < 300 µs, δ < 2 % VF1000 mV
Diode capacitance VR = 1 V, f = 1 MHz Ctot 10 pF
Reverse recovery time IF = 10 mA through IR = 10 mA
to Irr = 1mA, RL = 100 Ω
trr 5ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
VISHAY
BAT54 / 54A / 54C / 54S
Document Number 85508
Rev. 1.5, 18-Jun-04
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1000
100
10
1
0.1
V
F
in V
I
F
in mA
TJ= -40°
ˇ
C
T
J=25
ˇ
°C
TJ= 125°
ˇ
C
18025
0
04812
10
12
14
8
6
4
2
V
R
in V
C
in
pF
16 20 24 28
18026
0.01
0 5 10 15 20 25 30
1000
100
10
1
0.1
V
R
in V
I
R
in A
TJ= 25°
ˇ
C
TJ= 50ˇ°C
TJ= 75°ˇC
TJ= 125°ˇC
TJ= 100°ˇC
18027
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Document Number 85508
Rev. 1.5, 18-Jun-04
VISHAY
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.33 (.052)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.125 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.4 (.094)
2.6 (.102)
ISO Method E
Mounting Pad Layout
VISHAY
BAT54 / 54A / 54C / 54S
Document Number 85508
Rev. 1.5, 18-Jun-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
