FDV304PL99Z - Fairchild Semiconductor Corporation

August 1997

FDV304P

Digital FET, P-Channel

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDV304P Units

VDSS Drain-Source Voltage -25 V

VGSS Gate-Source Voltage -8 V

IDDrain Current - Continuous -0.46 A

- Pulsed -1.5

PDMaximum Power Dissipation 0.35 W

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm) 6.0 kV

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

FDV304P Rev.E1

-25 V, -0.46 A continuous, -1.5 A Peak.

RDS(ON) = 1.1 Ω @ VGS = -4.5 V

RDS(ON) = 1.5 Ω @ VGS= -2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

This P-Channel enhancement mode field effect transistors is

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery power applications

such as notebook computers and cellular phones. This device

has excellent on-state resistance even at gate drive voltages as

low as 2.5 volts.

Mark:304

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

S

D

G

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC-22 mV /o C

IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note)

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC2.1 mV /o C

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.65 -0.86 -1.5 V

RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -0.25 A 1.22 1.5 Ω

VGS = -4.5 V, ID = -0.5 A0.87 1.1

TJ =125°C 1.21 2

ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V -0.5 A

VGS = -4.5 V, VDS = -5 V -1

gFS Forward Transconductance VDS = -5 V, ID= -0.5 A 0.8 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -10 V, VGS = 0 V,

f = 1.0 MHz 63 pF

Coss Output Capacitance 34 pF

Crss Reverse Transfer Capacitance 10 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)Turn - On Delay Time VDD = -6 V, ID = -0.5 A,

VGS = -4.5 V, RGEN = 50 Ω7 20 ns

trTurn - On Rise Time 8 20 ns

tD(off) Turn - Off Delay Time 55 110 ns

tfTurn - Off Fall Time 35 70 ns

QgTotal Gate Charge VDS = -5 V, ID = - 0.25 A,

VGS = -4.5 V 1.1 1.5 nC

Qgs Gate-Source Charge 0.32 nC

Qgd Gate-Drain Charge 0.25 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -0.5 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note)-0.89 -1.2 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV304P Rev.E1

-5-4-3-2-10

-1.5

-1.25

-1

-0.75

-0.5

-0.25

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -4.5V

GS

DS

D

-2.7

-2.5

-2.0

-3.0

-1.5

-3.5

-1-0.8-0.6-0.4-0.20

-1.6

-1.4

-1.2

-1

-0.8

-0.6

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -2.0 V

GS

D

R , NORMALIZED

DS(on)

-3.5

-4.5

-2.7

-2.5

-3.0

-4.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

-3-2.5-2-1.5-1-0.5

-1

-0.75

-0.5

-0.25

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

J

125°C

25°C

Figure 5. Transfer Characteristics.

00.2 0.4 0.6 0.8 11.2

0.0001

0.01

0.1

0.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

V = -2.7V

GS

I = -0.25A

D

-5-4.5-4-3.5-3-2.5-2-1.5-1

0

1

2

3

4

5

V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C I = -0.5A

D

FDV304P Rev.E1

0.001 0.01 0.1 110 100 300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =357° C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 357 °C/W

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Figure 11. Transient Thermal Response Curve.

0.1 0.3 0.5 1 5 10 15 25

5

10

20

50

100

150

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0 V

GS

C

oss

C

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

00.2 0.4 0.6 0.8 11.2 1.4

0

1

2

3

4

5

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

g

GS

I = -0.25A

D15V

V = 5V

DS 10V

0.1 0.2 0.5 1 2 5 10 20 35

0.01

0.02

0.05

0.1

0.5

1

2

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

RDS(ON) LIMIT

D

DC

DS

1s

100ms

1ms

10s

V = -2.7V

SINGLE PULSE

R = 357 °C/W

T = 25°C

GS

A

θJA