TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1T 300V 25 2.4V TN2130K1 where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Applications Package Options Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Drain Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* Gate Source -55C to +150C TO-236AB 300C (SOT-23) top view * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 7-79 TN2130 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25C jc C/W ja C/W IDR* IDRM 85mA 200mA 0.36W 200 350 85mA 200mA TO-236AB * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 300 VGS(th) Gate Threshold Voltage 0.8 V GS(th) Typ Max Unit Conditions V ID = 1mA, VGS = 0V 2.4 V VGS = VDS, ID = 1mA Change in VGS(th) with Temperature -5.5 mV/C ID = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA VGS = 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 A VGS = 0V, VDS = Max Rating 100 A VGS = 0V, VDS = 0.8 Max Rating TA = 125C mA VGS = 10V, VDS = 25V ID(ON) ON-State Drain Current 250 RDS(ON) Static Drain-to-Source ON-State Resistance 25 VGS = 4.5V, ID = 120mA RDS(ON) Change in RDS(ON) with Temperature 1.1 %/C VGS = 4.5V, ID = 120mA GFS Forward Transconductance VDS = 25V, ID = 100mA CISS Input Capacitance 50 COSS Common Source Output Capacitance 15 CRSS Reverse Transfer Capacitance td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-OFF Delay Time 12 tf Fall Time 15 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 250 m pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V, ID = 120mA RGEN = 25 V ISD = 120mA, VGS = 0V ns ISD = 120mA, VGS = 0V 5 10 7 400 Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-80 TN2130 Typical Performance Curves Output Characteristics Saturation Characteristics 1.0 0.5 VGS = 10V 0.8 6V 0.4 4V 8V 6V 0.6 ID (amperes) ID (amperes) VGS =10V 4V 0.4 3V 0.2 0 10 20 30 40 3V 0.2 0.1 2V 2V 0 0.3 0 50 0 2 4 VDS (volts) 6 8 10 VDS (volts) Power Dissipation vs. Temperature Transconductance vs. Drain Current 1.0 1.0 VDS 0.8 VDS = 15V T A = -55C 0.6 PD (watts) GFS (siements) 0.8 25C 0.4 0.6 0.4 SOT-23 125C 0.2 0.2 0 0 0 0.1 0.2 0.3 0.4 0 0.5 25 50 ID (amperes) 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) 1.0 SOT-23 (pulsed) ID (amperes) 75 TA (C) SOT-23 (DC) 0.1 0.01 T A = 25C 0.8 0.6 0.4 SOT-23 T A = 25C P D = 0.36W 0.2 0 0.001 0 10 100 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 7-81 1.0 10 TN2130 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 50 VGS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 40 1.0 VGS = 10V 30 20 10 0.9 0 -50 0 50 100 0 150 0.2 0.4 0.6 0.8 1.0 ID (amperes) Tj(C) Transfer Characteristics VTH and RDS Variation with Temperature 2.0 1.0 0.6 VGS(th) (normalized) ID (amperes) RDS(ON) @ 4.5V, 120mA 25C 0.8 125C TA = -55C 0.4 1.6 1.1 1.2 1.0 0.8 0.9 VGS(th) @ 1mA 0.2 0.4 0.8 0 0 0 2 4 6 8 10 -50 0 50 100 150 Tj(C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 50 10 f = 1MHz VDS = 10V VGS (volts) C (picofarads) 8 CISS 25 CRSS 20 30 VDS = 40V 28pF 0 0 10 4 2 COSS 0 80 pF 6 40 0 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 7-82 0.8 1.0 RDS(ON) (normalized) 1.2 = 15V VDS = 15V VDS VF21 Die Specifications VF21 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF21 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 9 1.5 Au Al-Si 6 x 5.5 Al 1.3 Au - Si Eutectic Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional. 3. Al-Cu-Si is used for higher operating current densities. Bond pad size represents smaller gate pad. 4. Bond wire size and material depends on AuTCB, TSB or Al USB. 5. Soft solder or organic die attach methods may be used with appropriate backmetal option. CH06F SOT-23 K1 TO-39 N2 TO-92 N3 SOT-89 N8 Die ND * VF25 * VF25 *6 VF01 Device Number BVDSS min (V) RDS(ON) max () CISS typ (pf) VGS(th) max (V) TN2501 18 2.5 70 1.0 TN0702 20 1.3 130 1.0 * TN0604 40 0.75 140 1.6 * TN2504 40 1.0 70 1.6 TN0104 40 1.8 50 1.6 * TN0606 60 1.5 100 2.0 * TN0606 60 1.5 100 2.0 * TN2106 60 2.5 45 2.0 2N6660 60 3.0 50 2.0 TN0106 60 3.0 50 2.0 * VN0606 60 3.0 50 2.0 *3 VN0808 80 4.0 50 2.0 *3 2N6661 90 4.0 50 2.0 TN0610 100 1.5 100 2.0 TN2510 100 1.5 70 1.6 TN0110 100 3.0 50 2.0 * VN1206 120 6.0 125 2.0 *3 TN0620 200 6.0 110 1.6 * TN2524 240 6.0 65 2.0 VN2406 240 6.0 125 2.0 TN2124 240 10.0 38 1.8 VN2410 240 10.0 125 2.0 TN2425 250 3.5 105 0.8 TN5325 250 7.0 70 2.0 * TN2130 300 25.0 35 2.4 * TN5335 350 15.0 65 2.0 * VN3515 350 15.0 110 1.8 TN2435 350 6.0 2004 0.85 * VF24 TN2535 350 10.0 125 2.0 * VF25 TN2640 400 5.0 180 2.0 * *2 VF26 TN2540 400 12.0 95 2.0 * * VF25 VN4012 400 12.0 110 1.8 *3 * Quad1 *6 VF06 * VF21 *2 *2 * VF06 * VF25 VF01 * VF25 * VF24 *3 * *3 * * VF21 * *3 http://www.supertex.com/Products/Selector_Guides/CH06A_Table/ch06a_table.htm (1 of 2) [7/20/2001 12:41:17 PM] CH06F Add package suffix for complete part number, e.g., TN2640N3 is TN2640 in a TO-92 package. Notes: 1. Package options are defined on individual data sheets. 2. No package suffix required. 3. Use package suffix "L" instead of N3. 4. Rated at Maximum Value. 5. Rated at Minimum Value. 6. Not recommended for new designs. [Home] http://www.supertex.com/Products/Selector_Guides/CH06A_Table/ch06a_table.htm (2 of 2) [7/20/2001 12:41:17 PM]