7-79
TN2130
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BVDSS /R
DS(ON) VGS(th)
BVDGS (max) (max) TO-236AB*
300V 25Ω2.4V TN2130K1
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1T❋
where ❋ = 2-week alpha date code
Gate Source
Drain
TO-236AB
(SOT-23)
top view
Low Threshold
Ordering Information
7-80
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 300 V ID = 1mA, VGS = 0V
VGS(th) Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 1mA
∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/°CI
D = 1mA, VGS = VDS
IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µAV
GS = 0V, VDS = Max Rating
100 µAV
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 250 mA VGS = 10V, VDS = 25V
RDS(ON) Static Drain-to-Source ON-State Resistance 25 ΩVGS = 4.5V, ID = 120mA
∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°CV
GS = 4.5V, ID = 120mA
GFS Forward Transconductance 250 m VDS = 25V, ID = 100mA
CISS Input Capacitance 50
COSS Common Source Output Capacitance 15 pF VGS = 0V, VDS = 25V, f = 1MHz
CRSS Reverse Transfer Capacitance 5
td(ON) Turn-ON Delay Time 10
trRise Time 7
td(OFF) Turn-OFF Delay Time 12
tfFall Time 15
VSD Diode Forward Voltage Drop 1.8 V ISD = 120mA, VGS = 0V
trr Reverse Recovery Time 400 ns ISD = 120mA, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TA = 25°C°C/W °C/W
TO-236AB 85mA 200mA 0.36W 200 350 85mA 200mA
* ID (continuous) is limited by max rated Tj.
Thermal Characteristics
Electrical Characteristics (@ 25°C unless otherwise specified)
Switching Waveforms and Test Circuit
Ω
VDD = 25V,
ns ID = 120mA
RGEN = 25Ω
TN2130
7-81
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
001020304050
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0.5
0.4
0.3
0.2
0.1
0246 108
V
DS
(volts)
I
D
(amperes)
Maximum Rated Safe Operating Area
0 100010010
0.01
0.1
1.0
0.001
I(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1.0
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.4
0.2
0.8
0.6
00 0.1 0.2
G
FS
(siements)
I
D
(amperes)
V
DS
(volts)
Power Dissipation vs. Temperature
0 15010050
1.0
0.8
0.6
0.4
0.2
01257525
T
A
(°C)
P
D
(watts)
SOT-23 (pulsed)
V
GS
= 10V
0
0
V
GS
=10V
SOT-23 (DC)
SOT-23
0.3 0.50.4
2V
6V
V
DS
V
DS
= 15V
T
A
= 25°C
SOT-23
TA = 25°C
PD = 0.36W
T
A
= -55°C
25°C
125°C
2V
3V
4V
6V
8V
3V
4V
TN2130
7-82
Gate Drive Dynamic Characteristics
V
GS
(volts)
T
j
(°C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
TH
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
T
j
(°C)
Transfer Characteristics
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
50
C (picofarads)
I
D
(amperes)
0 10203040
25
0
0246810
-50 0 50 100 150
1.1
1.0
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
28pF
V
DS
= 10V
V
DS
= 40V
V
GS
= 4.5V
V
GS
= 10V
0 0.2 0.4 0.6 1.00.8
f = 1MHz
0.9
80 pF
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
R
DS(ON)
@ 4.5V, 120mA
0
1.0
0.8
0.6
0.4
0.2
0
T
A
= -55°C
V
DS
= 15V
125°C
Q
G
(nanocoulombs)
V
DS
(volts)
V
GS
(volts)
V
DS
= 15V
C
ISS
C
OSS
C
RSS
25°C
Typical Performance Curves TN2130
Die Specifications
Dimensions Bonding Pads3Recommended Assembly Material
Die Backside2
Geometry Length1Width Thickness Metal Material Size Wire4Wire Size4Preform5
All dimensions in mils.
VF21 30 30 9 ± 1.5 Au Al-Si 6 x 5.5 Al 1.3 Au - Si Eutectic
S
G
VF21
Backside: Drain
VF21
Notes:
1. Maximum values
2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.
3. Al-Cu-Si is used for higher operating current densities. Bond pad size represents smaller gate pad.
4. Bond wire size and material depends on AuTCB, TSB or Al USB.
5. Soft solder or organic die attach methods may be used with appropriate backmetal option.
Device
Number BVDSS
min (V) RDS(ON)
max (Ω)CISS
typ (pf) VGS(th)
max (V) SOT-23
K1 TO-39
N2 TO-92
N3 Quad1SOT-89
N8 Die
ND
TN2501 18 2.5 70 1.0 •VF25
TN0702 20 1.3 130 1.0 •
TN0604 40 0.75 140 1.6 ••6
TN2504 40 1.0 70 1.6 •VF25
TN0104 40 1.8 50 1.6 • •6VF01
TN0606 60 1.5 100 2.0 • VF06
TN0606 60 1.5 100 2.0 •
TN2106 60 2.5 45 2.0 • • VF21
2N6660 60 3.0 50 2.0 •2
TN0106 60 3.0 50 2.0 •
VN0606 60 3.0 50 2.0 •3
VN0808 80 4.0 50 2.0 •3
2N6661 90 4.0 50 2.0 •2
TN0610 100 1.5 100 2.0 • VF06
TN2510 100 1.5 70 1.6 •VF25
TN0110 100 3.0 50 2.0 • VF01
VN1206 120 6.0 125 2.0 •3
TN0620 200 6.0 110 1.6 •
TN2524 240 6.0 65 2.0 •VF25
VN2406 240 6.0 125 2.0 •3
TN2124 240 10.0 38 1.8 •
VN2410 240 10.0 125 2.0 •3
TN2425 250 3.5 105 0.8 •VF24
TN5325 250 7.0 70 2.0 • • •
TN2130 300 25.0 35 2.4 • VF21
TN5335 350 15.0 65 2.0 • •
VN3515 350 15.0 110 1.8 •3
TN2435 350 6.0 20040.85 •VF24
TN2535 350 10.0 125 2.0 •VF25
TN2640 400 5.0 180 2.0 • •2VF26
TN2540 400 12.0 95 2.0 • •VF25
VN4012 400 12.0 110 1.8 •3
CH06F
http://www.supertex.com/Products/Selector_Guides/CH06A_Table/ch06a_table.htm (1 of 2) [7/20/2001 12:41:17 PM]
Add package suffix for complete part number, e.g., TN2640N3 is TN2640 in a TO-92 package.
Notes:
1. Package options are defined on individual data sheets.
2. No package suffix required.
3. Use package suffix "L" instead of N3.
4. Rated at Maximum Value.
5. Rated at Minimum Value.
6. Not recommended for new designs.
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CH06F
http://www.supertex.com/Products/Selector_Guides/CH06A_Table/ch06a_table.htm (2 of 2) [7/20/2001 12:41:17 PM]
